On the electronic and geometric structure of the Si(113) surface

The Si(113) surface of a p-type sample was studied by AES, LEED and ARUPS. On the clean surface, a (3 × 2) and a (3 × 1) LEED pattern coexist for a large range of annealing temperatures. Annealing to 900 K results in (3 × 1), while temperatures higher than 1050 K favour the (3 × 2) superstructure. ARUPS reveals two weakly dispersing surface resonances around 0.9 and 2.6 eV below E_F which are connected with the (3 × 2) and (3 × 1) structures, respectively. The work function was determined as φ = 4.81 eV and the photoionization threshold as ξ = 5.36 eV. The bands are bent downwards by 0.43 eV at room temperature.     

Strain-Driven Formation of Nanostripes on In/Si（113） Surface

Periodic nanostripe arrays are observed on In/Si（113） surface using scanning tunneling microscopy. The stripe superstructures are identified as N × 1 reconstructions elongating in [211] or [121] direction and consisting of one vacancy line, one Si adatom row, and N - 2 In rows, in which N = 5 is predominant. The vacancy line formation relieves the strain induced by the Si adatom row and In rows, and plays an important role in stabilizing the stripe structures. The stability of nanostripe structures is demonstrated by analyzing the strain-mediated interaction of vacancy lines in the framework of the Frenkel-Kontorova model, which indicates that the predominant vacancy line period of N = 5 corresponds to the minimum Frenkel Kontorova energy.     

Anisotropic growth of titanium disilicide nanocrystals on Si(113) surface

Growth of titanium disilicide (TiSi₂) particles on a Ti-deposited Si(113) surface was observed with a scanning tunneling microscope. The direction of the particle growth was specifically related to the anisotropy of the high-index surface. The particles were identified as C54 nano-crystals, and their orientation was determined from the morphology of the silicide facets. The Si(113)-specific growth orientation is explained in terms of the lattice mismatch between C54 TiSi₂ and the reconstructed surface structure.     

On the structure of the laser irradiated Si(111)-(1 × 1) surface

We have studied the geometric structure of the Si(111)-(1 × 1) surface, prepared from a Si(111)-(7 × 7) surface with a pulsed ruby laser. With the technique of medium energy ion scattering, in combination with channeling and blocking, we find that this surface has a structure very similar to the (7 × 7) surface. Our results are inconsistent with a simple relaxation model.     

Structural Features of Boron-Doped Si（113） Surfaces Simulated by ab initio Calculations

Based on ab initio calculations, boron-doped Si（113） surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.     

Electronic structure of Si(111) surfaces

We report on new angle-resolved photoemission studies of Si(111) 2 × 1 and 7 × 7 surfaces. The emission from the 2 × 1 surface shows much structure. For normal emission the energy positions are insensitive to the photon energy in the range 19–27 eV. The emission has been interpreted as a probe of the surface density of states, SDOS, including both surface states, resonances and bulk-like states. The SDOS was also calculated as a function of parallel momentum k_∥ for a model of the Si(111) 2 × 1 surface obtained from energy minimization considerations. We identify emission from the dangling bond band, which has a positive dispersion of 0.6 eV, and also emission from surface resonances which have some character of the compressed and stretched back bonds. There are also other predicted surface resonances that correspond to experimental peaks which have not been identified in previous work. Except for the dangling bond band, the surface resonances are limited in k_∥ space, so that it is not possible to follow these resonance bands over all angles. Maximum intensity for the normal emission from the dangling bond is obtained at 23 eV, while the emission from the lowest s-like states monotonically increases towards 30 eV photon energy. When annealing the cleaved 2 × 1 surface to the 7 × 7 reconstructed surface, the spectra broaden significantly. The intensity of the dangling bond decreases and we see a very small metallic edge.     

Low-spin structure of 113Ru and 113Rh

The ¹¹³Ru and ¹¹³Rh nuclei, produced in the spontaneous fission of ²⁴⁸Cm and in proton-induced fission of ²³⁸U , were studied by means of prompt gamma spectroscopy using the EUROGAM 2 array of Anti-Compton spectrometers and the IGISOL mass separator, respectively. For the 0.5s isomer, found in ¹¹³Ru in our recent study we propose the 7/2^-[523] configuration. The present data indicate spin and parity 1/2⁺ for the ground state in ¹¹³Ru . This and some new data on the excited levels in ¹¹³Rh allows reinterpretation and a better understanding of the β^- _{} decay scheme of ¹¹³Ru . The properties of ¹¹³Ru were studied in the frame of the Core-Quasiparticle Coupling model, which has well reproduced the experimental data.     

Ge/Si(113)-(2×2)表面:自间隙原子引起的结构特征

基于对Ge在Si(113)上外延生长的扫描隧道显微学观察和第一性原理总能量和能带的计算 ,作者确定了Ge/Si(113) (2× 2 )表面的结构 .它是由沿 [1- 10 ]方向的反键增原子列和倾斜五聚体列交替排列而成 .其中五聚体的形成是由于处于亚表面的自间隙原子的作用 .这一发现说明自间隙原子的存在是 (113)取向表面的固有属性