On the electronic and geometric structure of the Si(113) surface

The Si(113) surface of a p-type sample was studied by AES, LEED and ARUPS. On the clean surface, a (3 × 2) and a (3 × 1) LEED pattern coexist for a large range of annealing temperatures. Annealing to 900 K results in (3 × 1), while temperatures higher than 1050 K favour the (3 × 2) superstructure. ARUPS reveals two weakly dispersing surface resonances around 0.9 and 2.6 eV below E_F which are connected with the (3 × 2) and (3 × 1) structures, respectively. The work function was determined as φ = 4.81 eV and the photoionization threshold as ξ = 5.36 eV. The bands are bent downwards by 0.43 eV at room temperature.     

Strain-Driven Formation of Nanostripes on In/Si（113） Surface

Periodic nanostripe arrays are observed on In/Si（113） surface using scanning tunneling microscopy. The stripe superstructures are identified as N × 1 reconstructions elongating in [211] or [121] direction and consisting of one vacancy line, one Si adatom row, and N - 2 In rows, in which N = 5 is predominant. The vacancy line formation relieves the strain induced by the Si adatom row and In rows, and plays an important role in stabilizing the stripe structures. The stability of nanostripe structures is demonstrated by analyzing the strain-mediated interaction of vacancy lines in the framework of the Frenkel-Kontorova model, which indicates that the predominant vacancy line period of N = 5 corresponds to the minimum Frenkel Kontorova energy.     

Anisotropic growth of titanium disilicide nanocrystals on Si(113) surface

Growth of titanium disilicide (TiSi₂) particles on a Ti-deposited Si(113) surface was observed with a scanning tunneling microscope. The direction of the particle growth was specifically related to the anisotropy of the high-index surface. The particles were identified as C54 nano-crystals, and their orientation was determined from the morphology of the silicide facets. The Si(113)-specific growth orientation is explained in terms of the lattice mismatch between C54 TiSi₂ and the reconstructed surface structure.     

Si(113)表面原子结构的低能电子衍射研究

利用低能电子衍射(LEED)研究了离子轰击加退火处理的和淀积外延的两种Si(113)表面的原子结构。发现对于经750—800℃退火后的两种Si(113)表面,当其温度高于600℃时存在1×1非再构表面相。随着样品温度缓慢地冷却至室温,Si(113)-1×1表面经过3×1(约600—400℃)最后转变为3×2再构。当退火温度为600℃时,则只出现3×1再构,室温下的3×2和3×1表面都是很稳定的。讨论了表面杂质对Si(113)表面原子结构的影响。在衬底温度为580℃的Si(113)表面上进行淀积生长,当外延 关键词：     

On the structure of the laser irradiated Si(111)-(1 × 1) surface

We have studied the geometric structure of the Si(111)-(1 × 1) surface, prepared from a Si(111)-(7 × 7) surface with a pulsed ruby laser. With the technique of medium energy ion scattering, in combination with channeling and blocking, we find that this surface has a structure very similar to the (7 × 7) surface. Our results are inconsistent with a simple relaxation model.     

(113)面硅衬底上自组织生长的GeSi量子点及其光荧光

用透射电子显微镜观察了Si(113)衬底上由固态源分子束外延生长的自组织量子点的形貌,测量了其原生及退火后低温下的光荧光谱.对所得结果进行了分析. 关键词：     

Structural Features of Boron-Doped Si（113） Surfaces Simulated by ab initio Calculations

Based on ab initio calculations, boron-doped Si（113） surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.     

Electronic structure of Si(111) surfaces

We report on new angle-resolved photoemission studies of Si(111) 2 × 1 and 7 × 7 surfaces. The emission from the 2 × 1 surface shows much structure. For normal emission the energy positions are insensitive to the photon energy in the range 19–27 eV. The emission has been interpreted as a probe of the surface density of states, SDOS, including both surface states, resonances and bulk-like states. The SDOS was also calculated as a function of parallel momentum k_∥ for a model of the Si(111) 2 × 1 surface obtained from energy minimization considerations. We identify emission from the dangling bond band, which has a positive dispersion of 0.6 eV, and also emission from surface resonances which have some character of the compressed and stretched back bonds. There are also other predicted surface resonances that correspond to experimental peaks which have not been identified in previous work. Except for the dangling bond band, the surface resonances are limited in k_∥ space, so that it is not possible to follow these resonance bands over all angles. Maximum intensity for the normal emission from the dangling bond is obtained at 23 eV, while the emission from the lowest s-like states monotonically increases towards 30 eV photon energy. When annealing the cleaved 2 × 1 surface to the 7 × 7 reconstructed surface, the spectra broaden significantly. The intensity of the dangling bond decreases and we see a very small metallic edge.     

Silver: a novel growth catalyst for Ge nanoislands on Si(113)

The impact of silver pre‐adsorption on germanium growth on Si(113) was investigated using in‐situ low‐energy electron microscopy (LEEM) as well as low‐energy electron diffraction (LEED). The adsorption of silver leads to the formation of a regular pattern of nanofacets along the [1 0] direction. The periodicity of this pattern in [33 ] direction was determined to (44 ± 4) nm. From LEED series at different energies the facets were identified to be of (111) and (115) orientation. While the (111) facets show a (√3 × √3)‐R30° reconstruction, the (115) facets exhibit a (2 × n) superstructure. The subsequent growth of Ge results in the formation of nanoislands that are aligned along the facets. These Ge islands have an anisotropic shape with typical sizes of about 100 nm in [33 ] direction and 400 nm in [1 0] direction. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)