Systematic study on experimental conditions for large-scale growth of aligned ZnO nanowires on nitrides

In vapor-liquid-solid (VLS) growth, it is generally believed that nanowires would grow as long as the right catalysts and substrate are supplied as well as the growth temperature is adequate. We show here, however, that oxygen partial pressure plays a key role in determining the quality of the aligned ZnO nanowires. We present a "phase diagram" between the oxygen partial pressure and the growth chamber pressure for synthesizing high quality aligned ZnO nanowires on GaN substrate. This result provides a road map for large-scale, controlled synthesis of ZnO nanowires on nitride semiconductor substrates with the potential to meet the needs of practical applications. The chemical process involved in the growth process is also systematically elaborated based on experimental data received under different conditions.     

Molten gallium as a catalyst for the large-scale growth of highly aligned silica nanowires

The vapor-liquid-solid (VLS) process is a fundamental mechanism for the growth of nanowires, in which a small size (5-100 nm in diameter), high melting point metal (such as gold and iron) catalyst particle directs the nanowire's growth direction and defines the diameter of the crystalline nanowire. In this article, we show that the large size (5-50 microm in diameter), low melting point gallium droplets can be used as an effective catalyst for the large-scale growth of highly aligned, closely packed silica nanowire bunches. Unlike any previously observed results using gold or iron as catalyst, the gallium-catalyzed VLS growth exhibits many amazing growth phenomena. The silica nanowires tend to grow batch by batch. For each batch, numerous nanowires simultaneously nucleate, grow at nearly the same rate and direction, and simultaneously stop growing. The force between the batches periodically lifts the gallium catalyst upward, forming two different kinds of products on a silicon wafer and alumina substrate. On the silicon wafer, carrot-shaped tubes whose walls are composed of highly aligned silica nanowires with diameters of 15-30 nm and length of 10-40 microm were obtained. On the alumina substrate, cometlike structures composed of highly oriented silica nanowires with diameters of 50-100 nm and length of 10-50 microm were formed. A growth model was proposed. The experimental results expand the VLS mechanism to a broader range.     

Synthesis and Characterization of ZnO Nanowires

Zinc oxide is a wide bandgap (3.37 eV) semiconductor with a hexagonal wurtzite crystal structure. ZnO prepared in nanowire form may be used as a nanosized ultraviolet light-emitting source. In this study, ZnO nanowires were prepared by vapor-phase transport of Zn vapor onto gold-coated silicon substrates in a tube furnace heated to 900 ?C. Gold serves as a catalyst to capture Zn vapor during nanowire growth. Size control of ZnO nanowires has been achieved by varying the gold film thickness…     

Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires

Pure and Co-doped ZnO nanowire arrays were grown on polished silicon substrates with high rates via an electrochemical technique. A negative potential applied to the substrate not only enhances the nucleation density on polished substrates more than 4 orders of magnitude but also increases the growth rate by 35 times over that obtained in the absence of the potential. Furthermore, incorporation of metallic dopants in ZnO nanowires was demonstrated in the low-temperature process. This fast growth technique provides a route to fabrication of low-cost highly oriented ZnO nanowires on polished substrate for industrial applications.     

Controlled growth of semiconducting oxides hierarchical nanostructures

Semiconducting ZnO hierarchical nanostructure, where ZnO nanonails were grown on ZnO nanowires, has been fabricated under control experiment with a mixture of ZnO nanopowders and Sn metal powders. Sn nanoparticles are located at or close to the tips of the nanowires and the growth branches, serving as the catalyst for the vapor-liquid-solid growth mechanism. The morphology and microstructure of ZnO nanowire and nanonail were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The long and straight ZnO nanowires grow along [0001] direction. ZnO nanonails are aligned radially with respect to the surface the ZnO nanowire. The long axis direction of nanonails forms an angle of ∼30° to the [0001] direction.     

Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation

ZnO nanowires doped with a high concentration Ga, In, and Sn were synthesized via thermal evaporation. The doping content defined as X/(Zn + X) atomic ratio, where X is the doped element, is about 15% for all nanowires. The nanowires consist of single-crystalline wurtzite ZnO crystal, and the average diameter is 80 nm. The growth direction of vertically aligned Ga-doped nanowires is [001], while that of randomly tilted In- and Sn-doped nanowires is [010]. A correlation between the growth direction and the vertical alignment has been suggested. The broaden X-ray diffraction peaks indicate the lattice distortion caused by the doping, and the broadening is most significant in the case of Sn doping. The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In- and Ga-doped nanowires, probably due to the larger charge density of Sn.     

Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis

In this paper we demonstrate how secondary ion mass spectrometry (SIMS) can be applied to ZnO nanowire structures for gold catalyst residue determination. Gold plays a significant role in determining the structural properties of such nanowires, with the location of the gold after growth being a strong indicator of the growth mechanism. For the material investigated here, we find that the gold remains at the substrate–nanowire interface. This was not anticipated as the usual growth mechanism associated with catalyst growth is of a vapour–liquid–solid (VLS) type. The results presented here favour a vapour–solid (VS) growth mechanism instead. Copyright © 2007 John Wiley & Sons, Ltd.     

Growth of large-area aligned molybdenum nanowires by high temperature chemical vapor deposition: synthesis, growth mechanism, and device application

Large-area aligned Mo nanowires have been grown on stainless steel substrates by high-temperature chemical vapor deposition with the use of Mo metal. The detailed physical and chemical growth processes regarding the formation of the nanowires have been investigated using mass spectroscopy, thermogravimetry, and differential scanning calorimetry analysis, as well as structure analysis by electron microscopy. In reference to Gibbs energy calculation, our study reveals that the growth relies on the decomposition of MoO2 vapors through condensation of its vapor at high substrate temperatures. The aligned growth is a result of competing growth with the nanowires normal to the substrate surface reaching the final growth front. The field emission measurement and the vacuum luminescent tube study show that the Mo nanowires have potential application as electron emitters.     

Characterization and field emission properties of ZnMgO nanowires fabricated by thermal evaporation process

In this paper, we investigate the roles of gold catalyst using modified thermal evaporation set-up in the growth process of ZnMgO nanowires. ZnMgO nanowires are fabricated on silicon substrates using different thickness of gold catalyst. A simple horizontal double-tube system along with chemical vapor diffusion of the precursors, based on Fick’s first law, is used to grow the ZnMgO nanowires. Field emission scanning electron microscopy images show that the ZnMgO nanowires are tapered. The optical properties of the ZnMgO nanowires are characterized by room temperature photoluminescence (PL) measurements. The PL studies demonstrate that the ZnMgO nanowires grown using this method have good crystallinity with excellent optical properties and have a larger band-gap in comparison to the pure ZnO nanowires. Field emission characterization shows that the turn-on field for the nanowires grown on the thinner gold film is lower than those grown on the thicker gold film.     

Patterned growth of vertically aligned ZnO nanowire arrays on inorganic substrates at low temperature without catalyst

We report an approach for growing aligned ZnO nanowire arrays with a high degree control over size, orientation, dimensionality, uniformity, and possibly shape. Our method combines e-beam lithography and a low temperature hydrothermal method to achieve patterned and aligned growth of ZnO NWs at <100degreesC on general inorganic substrates, such as Si and GaN, without using catalyst. This approach opens up the possibility of applying ZnO nanowires as sensor arrays, piezoelectric antenna arrays, two-dimensional photonic crystals, IC interconnects, and nanogenerators.     

硫化锌与硫化锌/氧化锌异质结纳米线的化学气相沉积法制备与表征

介绍一种利用石墨还原快速制备大量硫化锌纳米线的方法,并分别合成了超晶格型、双轴型、核/壳型的硫化锌/氧化锌异质结纳米线。所合成的硫化锌纳米线存在六方纤锌矿和立方闪锌矿两种晶型,纳米线长度达几十微米,直径在20-50 nm,直径均匀且产量很高。在具有双轴型的硫化锌/氧化锌异质结中,首次发现具有超结构特征的氧化锌。HRTEM分析表明,硫化锌/氧化锌超晶格异质结界面为ZB-ZnS(111)∥ZnO(0001),而核/壳型异质结界面为W-ZnS(0001)∥ZnO(0001),这三个晶面分别为各自晶体的极性面,即所合成的硫化锌/氧化锌异质结中极性面相互平行。对ZnS 和ZnS/ZnO 异质结的生长机制进行了探讨,并对硫化锌纳米线与硫化锌/氧化锌异质结的光学性质进行了分析。     

Near-room-temperature production of diameter-tunable ZnO nanorod arrays through natural oxidation of zinc metal

A simple, low-temperature strategy has been developed for the low-cost and large-area fabrication of ZnO nanoarrays on a zinc substrate by the natural oxidation of zinc metal in formamide/water mixtures. The one-step, wet-chemical approach has exhibited well-controlled growth of highly oriented and densely packed ZnO nanoarrays with large-area homogeneity and consisting of nanorods or nanowires with predictable morphologies, such as tunable diameters and identical lengths. The chemical-liquid-deposition process, an analogue to the widely used chemical-vapor-deposition technique, has been used for the near-room-temperature production of ZnO nanoarrays through continuous supply, transport, and thermal decomposition of zinc complexes in a liquid phase.     

The Development of Highly Sensitive and Selective Immunosensor Based on Antibody Immobilized ZnO Nanorods for the Detection of D‐Dimer

ZnO nanorods were grown on gold coated glass substrate by low temperature aqueous chemical growth method. Scanning electron microscopy (SEM) and X‐ray diffraction (XRD) techniques were used for the characterization of ZnO nanorods. ZnO nanorods are highly dense, uniform, well aligned and perpendicular‐oriented to the substrate. ZnO nanorods exhibited good crystal quality. The well aligned ZnO nanorods were potentially used for the development of selective and sensitive immunosensor for the detection of D‐dimer by immobilizing antibody on stabilized lipid films. The ZnO nanorods based immunosensor responded to a wide range of D‐dimer concentrations with fast response time of ca. 20 s.     

Growth of anisotropic gold nanostructures on conducting glass surfaces

In this paper, we describe a method for the growth of gold nanowires and nanoplates starting from a bilayer array of gold seeds, anchored on electrically conducting indium tin oxide (ITO) substrates. This is based on a seed-mediated growth approach, where the nanoparticles attached on the substrate through molecular linkages are converted to nanowires and nanoplates at certain cetyltrimethylammonium bromide (CTAB) concentration. Our modified approach can be used to make nanowires of several tens of micrometers length at a lower CTAB concentration of 0.1 M. The length of the nanowires can be varied by adjusting the time of the reaction. As the concentration of CTAB was increased to 0.25 M, the nanoparticles got converted to nanoplates. These Au nanoplates are (111) oriented and are aligned parallel to the substrate.     

Templateless assembly of molecularly aligned conductive polymer nanowires: a new approach for oriented nanostructures

Although oriented carbon nanotubes, oriented nanowires of metals, semiconductors and oxides have attracted wide attention, there have been few reports on oriented polymer nanostructures such as nanowires. In this paper we report the assembly of large arrays of oriented nanowires containing molecularly aligned conducting polymers (polyaniline) without using a porous membrane template to support the polymer. The uniform oriented nanowires were prepared through controlled nucleation and growth during a stepwise electrochemical deposition process in which a large number of nuclei were first deposited on the substrate using a large current density. After the initial nucleation, the current density was reduced stepwise in order to grow the oriented nanowires from the nucleation sites created in the first step. The usefulness of these new polymer structures is demonstrated with a chemical sensor device for H(2)O(2), the detection of which is widely investigated for biosensors. Finally, we demonstrated that controlled nucleation and growth is a general approach and has potential for growing oriented nanostructures of other materials.     

基于ZnO纳米线的圆柱形微纳米跨尺度结构的制备与表征

基于水浴法在光纤纤芯上合成了ZnO纳米线, 得到了圆柱形微纳米跨尺度结构. 将纳米级的随机粗糙表面叠加到微米级的圆柱形基底上, 实现了对圆柱形跨尺度结构表面形貌的仿真分析. 采用扫描电子显微镜(SEM)并结合Matlab图像处理算子对跨尺度结构的表面形貌和ZnO纳米线的几何特征参数进行了表征. 与ZnO纳米线薄膜实际轮廓提取出的特征参数相同, 对均方根粗糙度为39.2 nm、偏斜度为0.1324及峭度为2.7146的圆柱形粗糙表面进行了仿真, 验证了仿真表面与实际轮廓的一致性. 建立了合成工艺参数对ZnO纳米线的长度、直径及长径比等几何特征参数的影响关系, 确定最佳工艺条件为: 种子层溶液Zn²⁺浓度为1.0 mmol/L, 生长液Zn²⁺浓度为0.03 mol/L, 生长时间为1.5 h, 水浴恒温90℃.     

High surface-to-volume ratio ZnO microberets: low temperature synthesis, characterization, and photoluminescence

Novel hollow ZnO microstructures and ZnO microberets (ZMBs) with nanowires grown vertically on both the inner and outer surfaces of beret shells were synthesized on Si(100) substrates by simple thermal evaporation of pure zinc powder without any catalyst or template material at a relative low temperature of 490 degrees C. XRD, SAED, and HRTEM patterns show that the nanowires and shells of ZMBs are single-crystalline wurtzite structures. The growth mechanism of ZMBs is discussed in detail. The formation of these hollow microstructures depends on the optimum starting time of air introduction. It is a good way to grow well-aligned nanowires by using a nanoscale rough ZnO surface to realize a "self-catalyzed" vapor-liquid-solid process. The photoluminescence spectrum reveals a strong green emission related to the high surface-to-volume ratio of ZMBs. These types of special hollow high surface area structural ZMBs may find potential applications in functional architectural composite materials, solar cell photoanodes, and nanooptoelectronic devices.     

Low-temperature growth of ZnO nanorods by chemical bath deposition

Aligned ZnO nanorod arrays were synthesized using a chemical bath deposition method at normal atmospheric pressure without any metal catalyst. A simple two-step process was developed for growing ZnO nanorods on a PET substrate at 90-95 degrees C. The ZnO seed precursor was prepared by a sol-gel reaction. ZnO nanorod arrays were fabricated on ZnO-seed-coated substrate. The ZnO seeds were indispensable for the aligned growth of ZnO nanorods. The ZnO nanorods had a length of 400-500 nm and a diameter of 25-50 nm. HR-TEM and XRD analysis confirmed that the ZnO nanorod is a single crystal with a wurtzite structure and its growth direction is [0001] (the c-axis). Photoluminescence measurements of ZnO nanorods revealed an intense ultraviolet peak at 378.3 nm (3.27 eV) at room temperature.     

采用高分子自组装ZnO纳米线及其形成机理

介绍了一种能在各种晶面的硅衬底上制备垂直于衬底取向生长的ZnO纳米线阵列的新方法. 该法采用高分子络合和低温氧化烧结反应, 以聚乙烯醇(PVA)高分子材料作为自组装络合载体来控制晶体成核和生长. 首先通过PVA侧链上均匀分布的极性基团羟基(—OH)与锌盐溶液中的Zn²⁺离子发生络合作用, 然后滴加氨水调节络合溶液pH值为8.5±0.1, 使络离子Zn²⁺转变为Zn(OH)₂, 再将硅片浸入此溶液中, 从而在硅衬底表面得到较均匀的Zn(OH)₂纳米点, 随后在125 ℃左右Zn(OH)₂纳米点通过热分解转化为ZnO纳米点, 其后在420 ℃烧结过程中衬底上的ZnO纳米点在PVA高分子网络骨架对其直径的限域下逐渐取向生长成ZnO纳米线, 并且烧结初期PVA碳化形成的碳通过碳热还原ZnO为Zn, 再在氧气氛中氧化为ZnO的方式在纳米线顶端形成了催化活性点, 促进了纳米线顶端ZnO的吸收. 烧结后碳逐渐氧化被完全去除. 采用场发射扫描电镜(FE-SEM)、透射电镜(TEM, HR-TEM)和X射线衍射(XRD)对纳米线的分析结果表明, ZnO纳米线在硅衬底上分布均匀, 具有六方纤锌矿结构, 并且大多沿[0001]方向择优取向生长, 直径为20～80 nm, 长度可从0.5至几微米. 提出了聚合物控制ZnO结晶和形貌的网络骨架限域模型以解释纳米线的生长行为.     

Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures

In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.