Effect of dielectric confinement on optical properties of colloidal nanostructures

We review the effects caused by a large difference in the dielectric constants of a semiconductor and its surrounding in colloidal semiconductor nanostructures (NSs) with various shapes, e.g., nanocrystals, nanorods, and nanoplatelets. The difference increases the electron–hole interaction and consequently the exciton binding energy and its oscillator transition strength. On the other hand, this difference reduces the electric field of a photon penetrating the NS (the phenomenon is called the local field effect) and reduces the photon coupling to an exciton. We show that the polarization properties of the individual colloidal NSs as well as of their randomly oriented ensemble are determined both by the anisotropy of the local field effect and by the symmetry of the exciton states participating in optical transitions. The calculations explain the temperature and time dependences of the degree of linear polarization measured in an ensemble of CdSe nanocrystals.     

Bifurcation transitions in an optically injected diode laser: theory and experiment

We show how bifurcation theory and experimental measurements can be used hand-in-hand to analyse transitions to complicated dynamics in a semiconductor laser subject to optical injection. By a direct comparison of theoretical and experimental optical spectra we identify and explain the underlying dynamics in phase space. This is demonstrated with four distinct bifurcation transitions, including a transition near a saddle-node Hopf point and an intermittent transition to chaos.     

一维半导体的光学吸收

研究一维半导体在外电磁场中的光吸收、涉及电子带间的直接跃迁与间接跃迁，考虑了电子－空穴相互作用的激子光吸收，导出一维半导体的光吸收系数公式。     

Intersubband optical transitions in one dimensional quantum wire structures

One dimensional (1D) quantum wire structures are emerging as the new generation of semiconductor nanostructures offering exciting physical properties which have significant potential for novel device applications. These structures have been the subject of intensive investigation recently including extensive theoretical and experimental studies of their interband optical properties. In this work we present the results of our study of the intersubband optical transitions in 1D semiconductor quantum wires. The crescent shaped quantum wire structures used for this research were grown on non-planar GaAs substrates. The intersubband transition energy spectra, the selection rules, and the two dimensional envelope wavefunctions were theoretically investigated by using our new LENS (local envelope states) expansion. We present recent experimental results on modulation doped V-groove quantum wires, including PL, PLE, TEM, CL, and infrared polarization resolved spectroscopy. We have observed a very unusual absorption lineshape at the far-infrared wavelengths that we assigned to phonon assisted Fano resonance in a modulation doped quantum wire structure.     

GaN结构相变、电子结构和光学性质

运用第一性原理平面波赝势和广义梯度近似方法,对纤锌矿结构和氯化钠结构GaN的状态方程及其在高压下的相变进行计算研究,分析相变点附近的电子态密度、能带结构和光学性质的变化机制.通过状态方程和焓相等原理得到GaN从纤锌矿到氯化钠结构的相变压强分别为43.9 Gpa和46.0 Gpa;在相变的过程中,GaN由典型的直接带隙半导体转变为间接带隙半导体材料;氯化钠结构GaN相比于纤锌矿结构,介电函数主峰值增强,本征吸收边明显往高能方向移动,氯化钠结构GaN在低能区域的光学性质差于纤锌矿结构.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为,得出 AlN在16.7Gpa附近存在等结构相变,即由直接带隙结构转变为间接带隙结构。同时,结合高压下的态密度分布图和能级移动情况,分析了AlN在高压下的光学性质,吸收谱有向高能端移动(蓝移) 的趋势。     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为，得出 AlN在16.7Gpa附近存在等结构相变，即由直接带隙结构转变为间接带隙结构。同时，结合高压下的态密度分布图和能级移动情况，分析了AlN在高压下的光学性质，吸收谱有向高能端移动(蓝移) 的趋势。     

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photo-reflectance spectra, have been presented and discussed for selected QW and QD structures.     

Monopolar optical orientation of electron spins in bulk semiconductors and heterostructures

It is shown that intraband absorption of circularly polarized light leads to spin polarization of the electron gas. A theory of this monopolar optical spin orientation is developed for indirect intraband transitions in bulk semiconductors and for indirect intrasubband and direct intersubband transitions in quantum wells.     

Some optical properties of amorphous and crystalline antimony trisulphide thin films

The change in optical properties accompanying the amorphous crystalline transition has been studied for antimony trisulphide thin films. The real and imaginary parts of the dielectric constant are found to be much lower for amorphous films at lower photon energies, possibly because of a large number of defect states which would mostly disturb the top of the valence band and the conduction band comprised, respectively, of chalcogen lone pair and antibonding states. The crystalline material shows some structure in the imaginary part of the dielectric constant that corresponds to interband transitions, and apparently the direct band edge is at 1.88 eV. In the edge region the power law absorption has been observed in the amorphous material from which the extrapolated optical gap has been found to be 1.7 eV.     

High pressure studies of optical properties and crystal lattice stabilit of ZnFeSe

Abstract

The presence of iron ions in the ZnSe crystal lattice influences strongly the optical absorption properties of this semiconductor. We observed three different mechanisms of the absorption: the intra-ion transitions, photoionisation transition, and interband transition. The first two mechanisms originate from the presence of iron ions in the crystal. The pressure coefficients of intra-ion transitions were determined. The pressure red shift of ionisation spectrum was attributed to the transition of an electron from the valence band to the iron level. The influence of iron on the critical pressure for the phase transition from zincblende to rocksalt structure was also established.     

Indirect and direct optical transitions in the self-absorption spectra of SbI3 single crystals

The long-wave self-absorption edge of SbI₃ single crystals in the 293–95 ° K temperature range and their reflection spectrum inside the self-absorption band at room temperature were investigated. The absorption associated with indirect and direct interband transitions was isolated. The principal parameters characterizing indirect and direct optical transitions were determined.     

Rydberg spectroscopy in an optical lattice: blackbody thermometry for atomic clocks

We show that optical spectroscopy of Rydberg states can provide accurate in situ thermometry at room temperature. Transitions from a metastable state to Rydberg states with principal quantum numbers of 25-30 have 200 times larger fractional frequency sensitivities to blackbody radiation than the strontium clock transition. We demonstrate that magic-wavelength lattices exist for both strontium and ytterbium transitions between the metastable and Rydberg states. Frequency measurements of Rydberg transitions with 10(-16) accuracy provide 10 mK resolution and yield a blackbody uncertainty for the clock transition of 10(-18).     

Cd、Sr掺杂Mg2Ge电子结构和光学性质的第一性原理研究

此文用基于密度泛函理论(DFT)的第一性原理计算方法,分别研究了本征、掺Cd、掺Sr的Mg₂Ge的能带结构、电子态密度和光学性质.研究结果表明,本征Mg₂Ge是一种间接带隙半导体,带隙值为0.228eV.Sr的掺入使其变成带隙为0.591 eV的直接带隙半导体,Cd掺杂Mg₂Ge后表现出半金属性质.掺杂后的主要吸收峰减小,吸收谱范围增加.在可见光能量范围内,掺杂的Mg₂Ge有更低的反射率,对可见光的利用率增强.此外,掺杂还提高了高能区的光电导率.     

Robust quantum dot exciton generation via adiabatic passage with frequency-swept optical pulses

The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.     

Intraband transitions in magnetoexcitons in coupled double quantum wells

A theory of far-infrared (FIR) magneto-optical intraband s→p ^± transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained In_xGa_1−x As/GaAs quantum wells with nondegenerate valence band in the regime of both narrow and wide barriers has been analyzed. The energies and dipole matrix elements of transitions between the ground s and excited p ^± states in a quantizing magnetic field B>2 T and electric field ℰ perpendicular to the quantum well plane have been studied. The regimes of direct (in a weak electric field) and indirect (in a strong electric field) transitions, and the transition between the direct and indirect regimes, have been investigated. Zh. éksp. Teor. Fiz. 113, 1446–1459 (April 1998)     

Charge-transfer transitions and optical spectra of vanadates

Specific features of the charge-transfer states and O2p → V3d transitions in the (VO₆)^9? octahedral complex are studied using the cluster approach. The reduced matrix elements of the electric-dipole transition operator are calculated for many-electron wave functions corresponding to the initial and final states of a charge-transfer transition. Using a parameterization of the results, the relative intensities of the allowed charge-transfer transitions are calculated disregarding the mixing of different configurations of the same symmetry. The Tanabe-Sugano theory is used with inclusion of this mixing to calculate the energies of many-electron charge-transfer transitions and their actual intensities. Modeling of the optical spectrum of LaVO₃ reveals a complicated charge-transfer transition band consisting of 81 lines. The main maxima of the band are in the range 6.3–7.3 eV. There are also additional maxima in the regions of ≈3 and ≈8–9 eV. The bandwidth is ≈10 eV. The results of model calculations are in agreement with experiments and demonstrate the weakness of the widely used assumption that the spectrum of charge-transfer transitions has a simple structure.     

Optical stark effect and dressed exciton states in a Mn-doped CdTe quantum dot

We report on the observation of spin-dependent optically dressed states and the optical Stark effect on an individual Mn spin in a semiconductor quantum dot. The vacuum-to-exciton or the exciton-to-biexciton transitions in a Mn-doped quantum dot are optically dressed by a strong laser field, and the resulting spectral signature is measured in photoluminescence. We demonstrate that the energy of any spin state of a Mn atom can be independently tuned by using the optical Stark effect induced by a control laser. High resolution spectroscopy reveals a power-, polarization-, and detuning-dependent Autler-Townes splitting of each optical transition of the Mn-doped quantum dot. This experiment demonstrates an optical resonant control of the exciton-Mn system.     

Semiconductor nanocylindrical heterolayer in a radial electrostatic field: The electronic spectrum and optical properties

In the effective-mass approximation the single-electron states in a semiconductor cylindrical nanolayer under the presence of lateral-radial electrical field in the regime of strong quantization are considered. The explicit form of the energy spectrum and envelope wave functions of single-electron states is obtained in the cases of “large” and “moderate” radii of the system. The corresponding absorption characteristics of interband optical transitions in the layer under the presence of radial field are calculated.