Structure, Stoichiometry, and Properties of the Chimney-Ladder Phases Ru2Ge3+x (0<x<1)

The preparation and physical characterization of non-stoichiometric Ru₂Ge_3+x (0≤x≤1) are reported for the first time. The defect TiSi₂-type chimney-ladder structure is maintained for the full stoichiometry range. The resistivity of Ru₂Ge_3+x increases systematically with x from 300 mΩ cm, x=0 -3 Ω cm, x=1 at 300 K. The temperature dependence is consistent with a variable range-hopping mechanism for x≥0.6. The Seebeck coefficients of samples do not evolve simply with x. A low thermal conductivity (κ_{300 K}=0.03 W/K cm) suggests that Ru₂Ge₃ has some of the properties of a phonon-glass-electron-crystal. The low value of the thermoelectric figure of merit ZT=3.2×10⁻³ (T=300 K) calculated for Ru₂Ge₃ is due primarily to a low conductivity.     

Die Kristallstruktur von Ru2Si3

The crystal structure of Ru₂Si₃ has been refined by leastsquares using three-dimensional X-ray data from a twinned crystal (1355 reflections,R=5.8%). Ru₂Si₃ is isostructural with Ru₂Ge₃ and like this compound a member of the Mn₁₁Si₁₉ structure family. The lattice parameters of the orthorhombic unit cell (Pnca—D ₁₄ ^2h ) are:a=5.530 (1),b=11.060 (2) andc=8.952 (2) Å.

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Mit 1 Abbildung     

La3Ru8B6 and Y3Os8B6, new members of a homologous series R(A)nM3n−1B2n

Two new compounds, La₃Ru₈B₆ and Y₃Os₈B₆, were synthesized by arc melting the elements. Their structural characterization was carried out at room temperature on as-cast samples by using X-ray diffractometry. According to X-ray single-crystal diffraction results these borides crystallize in Fmmm space group (no. 69), Z=4, a=5.5607(1) Å, b=9.8035(3) Å, c=17.5524(4) Å, ρ=8.956 Mg/m³, μ=25.23 mm⁻¹ for La₃Ru₈B₆ and a=5.4792(2) Å, b=9.5139(4) Å, c=17.6972(8) Å, ρ=13.343 Mg/m³, μ=128.23 mm⁻¹ for Y₃Os₈B₆. The crystal structure of La₃Ru₈B₆ was confirmed from Rietveld refinement of X-ray powder diffraction data. Both La₃Ru₈B₆ and Y₃Os₈B₆ compounds are isotypic with the Ca₃Rh₈B₆ compound and their structures are built up from CeCo₃B₂-type and CeAl₂Ga₂-type structural fragments taken in ratio 2:1. They are the members of structural series R(A)_nM_3n−1B_2n with n=3 (R is the rare earth metal, A the alkaline earth metal, and M the transition metal). Structural and atomic parameters were also obtained for La_0.94Ru₃B₂ compound from Rietveld refinement (CeCo₃B₂-type structure, P6/mmm space group (no. 191), a=5.5835(9) Å, c=3.0278(6) Å).     

Bridgman crystal growth of Yb2Ru3Ge4—A ternary germanide with a three-dimensional network of condensed distorted RuGe5 and RuGe6 units

The germanide Yb₂Ru₃Ge₄ was synthesized from the elements using the Bridgman crystal growth technique. The monoclinic Hf₂Ru₃Si₄ type structure was investigated by X-ray powder and single crystal diffraction: C2/c, Z=8, a=1993.0(3) pm, b=550.69(8) pm, c=1388.0(2) pm, β=128.383(9)°, wR₂=0.0569, 2047 F² values, and 84 variables. Yb₂Ru₃Ge₄ contains two crystallographically independent ytterbium sites with coordination numbers of 18 and 17 for Yb1 and Yb2, respectively. Each ytterbium atom has three ytterbium neighbors at Yb-Yb distances ranging from 345 to 368 pm. The shortest interatomic distances occur for the Ru-Ge contacts. The three crystallographically independent ruthenium sites have between five and six germanium neighbors in distorted trigonal bipyramidal (Ru1Ge₅) or octahedral (Ru2Ge₆ and Ru3Ge₆) coordination at Ru-Ge distances ranging from 245 to 279 pm. The Ru2 atoms form zig-zag chains running parallel to the b-axis at Ru2-Ru2 of 284 pm. The RuGe₅ and RuGe₆ units are condensed via common edges and faces leading to a complex three-dimensional [Ru₃Ge₄] network.     

Crystal structure and physical properties of the novel ternary intermetallics URuSi3−x and U3Ru2Si7

Two novel ternary intermediate phases, namely URuSi_3−x (x=0.11) and U₃Ru₂Si₇ were found in the Si-rich part of the U-Ru-Si phase diagram. Single crystal X-ray diffraction measurements, carried out at room temperature, indicated that URuSi_3−x crystallizes in its own tetragonal type structure (space group P4/nmm, no. 129; unit cell parameters: a=12.108(1) Å and c=9.810(1) Å), being a derivative of the BaNiSn₃-type structure. U₃Ru₂Si₇ adopts in turn a disordered orthorhombic La₃Co₂Sn₇-type structure (space group Cmmm, no. 65; unit cell parameters: a=4.063(1) Å, b=24.972(2) Å and c=4.072(1) Å). As revealed by magnetization, electrical resistivity and specific heat measurements, both compounds order magnetically at low temperatures. Namely URuSi_3−x is a ferromagnet with T_C=45 K, and U₃Ru₂Si₇ shows ferrimagnetic behavior below T_C=29 K.     

Multiple magnetic phase transitions,dilute Fe hyperfine fields and europium valence instabilities in RMn2Si2-xGex,R=rare earth

Mössbauer studies of dilute⁵⁷Fe and¹⁵¹Eu in RMn₂Si_2-xGe_x (R=La, Sm, Eu and Gd) at temperatures 4.2 K to 480 K have been performed. The diamagnetic iron and europium reveal the magnetic order of the Mn and rare earth sublattices through transferred hyperfine interactions. The⁵⁷Fe studies show that in LaMn₂Si₂, LaMn₂Ge₂, and SmMn₂Ge₂ the Mn is magnetically ordered above the known Curie temperatures, and the compounds are antiferromagnets up to T_N=470 K, 415 K and 385 K respectively. Studies of¹⁵¹Eu in R_1-xEu_xMn₂Si₂, (R=La, Gd) display Eu subspectra corresponding to Eu²⁺, Eu³⁺ and intermediate valant Eu. All display large magnetic hyperfine fields.     

Homoatomic Clustering in the Intermediate Valence Compounds Yb1−yAl3−xSix and Yb1−yAl3−xGex

Two new phases, Yb_1−xAl_3−xSi_x and Yb_1−yAl_3−xGe_x, were found by systematic investigations of the according ternary systems. The crystal structures of Yb_1−yAl_2.8Si_0.2 and Yb_1−yAl_2.8Ge_0.2 (defect HT-PuAl₃ type) were studied by X-ray powder methods (CuKα₁ radiation, λ=1.54056 Å, hexagonal system, space group P6₃/mmc (No. 194), a=6.009(1) and 6.015(1) Å, c=14.199(2) and 14.241(5) Å, V=444.0(2) and 446.2(3) ų, 93 and 92 reflections, and 8200 and 8000 profile points for silicide and germanide, respectively). Full profile refinements with 11 and 13 structural parameters resulted in R_I=0.049 and 0.054, and R_p=0.088 and 0.104, respectively. The ternary structures are distorted closest packings in comparison with the binary YbAl₃ compound with AuCu₃-type structure. They are characterized by the formation of Al₃-, Si₃-, and Ge₃-homoatomic clusters and aluminum networks. Magnetization measurements show that both the silicide and germanide are valence fluctuation compounds with enhanced electronic density of states at the Fermi level similar to the binary YbAl₃. The characteristic maximum of the magnetic susceptibility increases from ≈120 K for YbAl₃ to ≈140 K for Yb_1−yAl_2.8Si_0.2or Yb_1−yAl_2.8Ge_0.2 and further to ≈150 K for Yb_1−yAl_2.75Si_0.25. The S-shape of the electrical resistivity curves is also characteristic of valence fluctuations.     

Activation of the carbon—nitrogen triple bond of benzonitrile in the presence of triosmium clusters and acetic acid. Crystal structure of (μ-H)Os3(CO)10(μ-O2CCH3), a product of the reaction

The activation of the CN triple bond of benzonitrile in the presence of acetic acid and of Os₃(CO)₁₂ or H₂Os₃(CO)₁₀ has been studied. When Os₃(CO)₁₂ reacts with PhCN and acetic acid in refluxing n-octane the three main products are (μ-H)Os₃(CO)₁₀(μ-O₂CCH₃) (I), (μ-H)Os₃(CO)₁₀(μ-NCHPh) (II) and (μ-H)Os₃(CO)₁₀(μ-NHCH₂Ph) (III); II and III are analogues of (μ-H)Ru₃(CO)₁₀(μ-NCHPh) and (μ-H)Ru₃(CO)₁₀(μ-NHCH₂Ph) obtained from PhCN, Ru₃(CO)₁₂ or H₄Ru₄(CO)]₁₂, and acetic acid. In contrast to the reaction with ruthenium clusters, Os₃(CO)₁₂ and H₂Os₃(CO)₁₀ also give the adduct Os₃(CO)₁₀(CH₃COOH) (I). The structure of I has been fully elucidated by X-ray diffraction. Crystals of I are monoclinic, space group P2₁/m, with unit cell parameters a 7.858(6), b 12.542(8), c 9.867(6) Å, β 109.92(2)°, Z = 2. In I an edge of the triangular cluster of osmium atoms is doubly bridged by a hydride and an acetate ligand. Ten terminal carbonyl groups are bonded to the metal atoms.     

Synthesis and structural characterization of A3In2Ge4 and A5In3Ge6 (A=Ca, Sr, Eu, Yb)—New intermetallic compounds with complex structures, exhibiting Ge-Ge and In-In bonding

Reported are the synthesis and the structural characterization of four new polar intermetallic phases, which exist only with mixed alkaline-earth and rare-earth metal cations in narrow homogeneity ranges. (Sr_1-xCa_x)₅In₃Ge₆ and (Eu_1-xYb_x)₅In₃Ge₆ (x≈0.7) crystallize in the orthorhombic space group Pnma with two formula units per unit cell (own structure type, Pearson symbol oP56). The lattice parameters are as follows: a=13.109(3)-13.266(3) Å, b=4.4089(9)-4.4703(12) Å, and c=23.316(5)-23.557(6) Å. (Sr_1-xCa_x)₃In₂Ge₄ and (Sr_1-xYb_x)₃In₂Ge₄ (x≈0.4-0.5) adopt another novel monoclinic structure-type (space group C2/m, Z=4, Pearson symbol mS36) with lattice parameters in the range a=19.978(2)-20.202(2) Å, b=4.5287(5)-4.5664(5) Å, c=10.3295(12)-10.3447(10) Å, and β=98.214(2)-98.470(2)°, depending on the metal cations and their ratio. The polyanionic sub-structures in both cases are based on chains of InGe₄ corner-shared tetrahedra. The A₅In₃Ge₆ structure (A=Sr/Ca or Sr/Yb) also features Ge₄ tetramers, and isolated In atoms in nearly square-planar environment, while the A₃In₂Ge₄ structure (A=Sr/Ca or Eu/Yb) contains zig-zag chains of In and Ge strings with intricate topology of cis- and trans-bonds. The experimental results have been complemented by tight-binding linear muffin-tin orbital (LMTO) band structure calculations.     

The U4Re7Si6 type – Trends in electronic structure and chemical bonding

The electronic structures and chemical bonding of selected ternary compounds of the A₄T₇X₆ family (of U₄Re₇Si₆-type) intermetallics have been studied by ab initio methods. The calculations for two series: Mg₄Rh₇P₆, Sc₄Co₇Ge₆, Ti₄Co₇Ge₆ and uranium containing U₄Re₇Si₆, U₄Ru₇Ge₆, and U₄Ru₇As₆ show common bonding characteristics pertaining to main T1–X and T2–X interactions (T = transition metal and X = p-element) due to the peculiar crystal chemistry with T1@X₆ and T2@X₄ coordination polyhedra. The uranium compounds are found to be stabilized in a spin polarized ferromagnetic configuration, especially for U₄Ru₇Ge₆ (in agreement with experiment) and U₄Ru₇As₆.     

Die Kristallstruktur der Verbindungen V11Ge8, Cr11Ge8 und Mn11Ge8

The crystal structure of the isotypic compoundsT ₁₁Ge₈ (T=V, Cr, Mn) has been determined by means of direct methods fromWeissenberg data of a Cr₁₁Ge₈ single crystal. A finalR-value of 7.7% was obtained by least squares refinement based on 684 observed reflexions. The orthorhombic unit cell (Pnam-D _2h ¹⁶ ) with the dimensionsa-13.171,b=15.775 andc=4.939 Å contains 4 formula units Cr₁₁Ge₈. Atoms are arranged mainly in primary layers atz=1/4, 3/4 with nets comprising squares, pentagons and hexagons which are all centered by atoms of secondary layers atz≈0, 1/2. Secondary layer atoms formT—T-chains as well as Ge?Ge-chains inz-direction with short bond lengths (2.47 Å). The structural relationship between Cr₁₁Ge₈, Cr₅Ge₃ (W₅Si₃-type) and V₆Si₅ is discussed.     

Crystal structure and electronic properties of the new compounds U3Co12−xX4 with X=Si, Ge

The new compounds U₃Co_12−xX₄ with X=Si, Ge were prepared by direct solidification of the corresponding liquid phase, followed by subsequent annealing at 1173 K. Single crystal X-ray diffraction carried out at room temperature showed that they crystallize with the hexagonal space group P6₃/mmc (no.194) and the unit-cell parameters a=8.130(5), c=8.537(5) Å and a=8.256(1), c=8.608(1) Å for the silicide and germanide, respectively. Their crystal structure derives from the EuMg_5.2 structure type, and is closely related to the Sc₃Ni₁₁Si₄ and Gd₃Ru_4−xAl_12+x types. For the present compounds, no substitution mechanisms have been observed, the partial occupancy of one Co site results from the presence of vacancies, only. The homogeneity ranges, evaluated by energy dispersive spectroscopy analysis, extend from x=0.0(2) to 0.3(2) and from x=0.0(2) to 1.0(2) for U₃Co_12−xSi₄ and U₃Co_12−xGe₄, respectively. The electronic properties of both compounds were investigated by means of DC magnetic susceptibility and DC electrical resistivity measurements. The U₃Co_12−xX₄ compounds are both Pauli paramagnets with their electrical resistivity best described as poor metallic or dirty metallic behavior.     

EuZn2Si2 and EuZn2Ge2 Grown from Zn or Ga(ln)/Zn Flux

Single crystals of the novel ternary compounds EuZn₂Si₂ and EuZn₂Ge₂ were grown from pure gallium, indium, or zinc metal used as a flux solvent. Crystal properties were characterized using X-ray single-crystal analyses via Gandolfi and Weissenberg film techniques and by four-circle X-ray single-crystal diffractometry. The new compounds crystallize with ternary derivative structures of BaAl₄, i.e., EuZn₂Si₂ with ThCr₂Si₂-type (a=0.42607(2) nm, c=1.03956(5) nm, I4/mmm, R₁=0.038) and EuZn₂Ge₂ with CaBe₂Ge₂-type (a=0.43095(2) nm, c=1.07926(6) nm, P4/nmm, R₁=0.067). XAS and magnetic measurements on EuZn₂Si₂ and EuZn₂Ge₂ revealed in both compounds the presence of Eu²⁺ ions carrying large magnetic moments, which order magnetically at low temperatures. The magnetic phase transition occurs at T_N=16 and 7.5 K for the silicide and the germanide, respectively. In EuZn₂Si₂ there occurs a spin reorientation at 13 K and furthermore some canting of antiferromagnetically ordered moments below about 10 K. In EuZn₂Ge₂ a canted antiferromagnetic structure is formed just at T_N.     

Die Kristallstruktur von Si5O[PO4]6

The crystal structure of Si₅O[PO₄]₆ has been determined and refined by least-squares, using three-dimensional X-raydata fromWeissenberg photographs: space group R 3;a=7.86₉ andc=24.13₈ Å;Z=3; 418 independent reflections;R=6.0%. The crystal structure consists of isolated [SiO₆] octahedra and [Si₂O₇] groups which are linked by [PO₄] tetrahedra forming a three-dimensional network. The average interatomic distances are: Si[6]?O=1.76₈, Si[4]?O=1.60₇ and P?O=1.52_i Å. The compound is isotypic with Ge₅O[PO₄]₆.     

Interaction of –CClx (x=1–3) with Ru2 and RuSn dimers: a density functional study

Density functional calculation were performed on the Ru₂ and RuSn metal dimers and the species formed from their interaction with –CCl_x (x=1–3) fragments. The importance of these fragments in the hydrodechlorination of carbon tetrachloride has been motivated this study aiming to contribute to understand the effect of the tin in the performance of the noble metals based catalysts. We have observed that the carbon tetrachloride does not form a precursor with the metal dimers. The CCl₄ readily dissociates forming adsorbed chlorine and –CCl₃ complexes. The chlorine atoms prefer to adsorb on the bridge sites and the RuSn–Cl binding energy is about 5 kcal mol⁻¹ larger than the Ru₂–Cl binding energy. The Ru₂–CCl_x (x=1–3) binding energies are larger than the respective RuSn–CCl_x (x=1–3) binding energies. However, the reaction energy of the dechlorination of CCl₄ leading to adsorbed –CCl_x (x=1–3) and chlorine is thermodynamically more favorable for RuSn than the Ru₂. The differences between Ru₂ and RuSn systems have been discussed based on the different interaction mechanism due to the presence of the tin center and its affinity for the chlorine atoms.     

Die Kristallstruktur eines neuen Alkalidigermanats,Na4K2Ge2O7

Na₄K₂Ge₂O₇ is monoclinic, space group P 2₁ (No. 4),a=6.010 (3),b=6.020 (3),c=29.26 (1) Å, γ=119.9 (1)° andZ=4. Its crystal structure has been determined from 1210 single crystal X-ray reflections and refined toR=0.114. The structure contains two independent Ge₂O₇ groups, the (GeOGe) angles of which are 128 and 132°.     

The new binary intermetallic YbGe2.83

The new compound YbGe_2.83 was obtained from the reaction of Yb and Ge in liquid indium. The crystal structure of YbGe_2.83 adopts the trigonal, P3?m1 space group with a=b=8.3657(12) Å and c=7.0469(14) Å. The structure of YbGe_2.83 is a variant of the CaAl₂Si₂ structure type with ordered vacancies. Germanium atoms form double layers of puckered hexagons creating slabs that sandwich the Yb atoms. YbGe_2.83 can be classified as a Zintl compound with the formula Yb^(2+x)+(Ge_2.83)^(2+x)−. The deficiencies at the Ge sites cause a mixed/intermediate valent state of ytterbium (Yb^2.35+). Valence bond sum calculations suggest an average valence of Yb ions in YbGe_2.83 of 2.51 consistent with an intermediate valence compound.     

Crystal structure and magnetic properties of Ce7Ni5±xGe3±xIn6 and Pr7Ni5±xGe3±xIn6

The indides Ce₇Ni_5±xGe_3±xIn₆ and Pr₇Ni_5±xGe_3±xIn₆ were synthesized from the elements by arc-melting of the components. Single crystals were grown via special annealing sequences. Both structures were solved from X-ray single crystal diffraction data: new structure type, P6/m, Z=1, a=11.385(2), c=4.212(1) Å, wR₂=0.0640, 634F² values, 25 variables for Ce₇Ni_4.73Ge_3.27In₆ and a=11.355(6), c=4.183(2) Å, wR₂=0.0539, 563F² values, 25 variables for Pr₇Ni_4.96Ge_3.04In₆. Both indides show homogeneity ranges through Ni/Ge mixing (M sites). This new structure type can be derived from the AlB₂ structure type by a substitution of the Al and B atoms by CeM₁₂ and NiIn₆Ce₃ polyhedra (tricapped trigonal prism). Magnetic susceptibility measurements on a polycrystalline sample of Ce₇Ni₅Ge₃In₆ indicated Curie-Weiss like paramagnetic behavior down to 1.71 K with the effective magnetic moment slightly reduced in relation to the value expected for trivalent cerium ions. No magnetic ordering is evident.     

New Compounds of the ThCr2Si2-Type and the Electronic Structure of CaM2Ge2 (M: Mn-Zn)

Two new compounds were synthesized by heating mixtures of the elements at 975-1025 K and characterized by single-crystal X-ray methods. CaZn₂Si₂ (a=4.173(2) Å, c=10.576(5) Å) and EuZn₂Ge₂ (a=4.348(2) Å, c=10.589(9) Å) crystallize in the ThCr₂Si₂-type structure (space group I4/mmm; Z=2). Magnetic susceptibility measurements of EuZn₂Ge₂ show Curie-Weiss behavior with a magnetic moment of 7.85(5)μ_B/Eu and a paramagnetic Curie temperature of 10(1) K. EuZn₂Ge₂ orders antiferromagnetically at T_N=10.0(5) K and undergoes a metamagnetic transition at a low critical field of about 0.3(2) T. The saturation magnetization at 2 K and 5.5 T is 6.60(5) μ_B/Eu. ¹⁵¹Eu Mössbauer spectroscopic experiments show one signal at 78 K at an isomer shift of −11.4(1) mm/s and a line width of 2.7(1) mm/s compatible with divalent europium. At 4.2 K full magnetic hyperfine field splitting with a field of 26.4(4) T is detected. The already known compounds CaM₂Ge₂ (M: Mn-Zn) also crystallize in the ThCr₂Si₂-type structure. Their MGe₄ tetrahedra are strongly distorted with M=Ni and nearly undistorted with M=Mn or Zn. According to LMTO electronic band structure calculations, the distortion is driven by a charge transfer from M-Ge antibonding to bonding levels.     

X-ray structural study of intermetallic alloys RT2Si and RTSi2 (R=rare earth, T=noble metal)

Two series of intermetallic alloys, RT₂Si and RTSi₂, have been synthesized from stoichiometric compositions. The crystal structures of EuPt_1+xSi_2−x (CeNiSi₂-type), CeIr₂Si (new structure type), YbPd₂Si and YbPt₂Si (both YPd₂Si-type) have been elucidated from X-ray single crystal CCD data, which were confirmed by XPD experiments. The crystal structures of LaRh₂Si and LaIr₂Si (CeIr₂Si-type), {La,Ce,Pr,Nd}AgSi₂ (all TbFeSi₂-type), and EuPt₂Si (inverse CeNiSi₂-type) were characterized by XPD data. RT₂Si/RTSi₂ compounds were neither detected in as-cast alloys Sc₂₅Pt₅₀Si₂₅, Eu₂₅Os₂₅Si₅₀ and Eu₂₅Rh₂₅Si₅₀ nor after annealing at 900 °C. Instead, X-ray single crystal data prompted Eu₂Os₃Si₅ (Sc₂Fe₃Si₅-type) and EuRh_2+xSi_2−x (x=0.04, ThCr₂Si₂-type) as well as a new structure type for Sc₂Pt₃Si₂ (own type).