Frequency measurement of130Te2 resonances near 467 nm

Precision spectroscopy on molecular tellurium is performed by measuring the frequency difference between the observed lines and an eigenfrequency of a high-finesse cavity mode. The mode frequency is derived from a measurement of the cavity's free spectral range taking into account the cavity dispersion due to phase shifts in the dielectric mirror coatings. The experimental technique is based on dual frequency modulation and is applied to determine the transition wavenumbers of several lines in¹³⁰Te₂ near 467 nm with an uncertainty of 2 × 10^–8.     

Diode laser spectrometer at 493 nm for single trapped Ba+ ions

+ ions. Frequency doubling of a 100 mW diode laser at 986 nm results in up to 60 mW output power at 493 nm in a bandwidth of less than 60 kHz with respect to the cavity used for locking. Reference frequencies of 18 spectral lines of Te₂ near the 493 nm resonance of Ba⁺ have been measured using modulation transfer spectroscopy. The fluorescence excitation spectrum of a single Ba⁺ ion, measured with this laser, exhibits well-resolved dark resonances, which confirms the versatility of the system for quantum optical experiments. Received: 12 June 1998     

Interferometric frequency measurements of 130Te2 transitions at 486 nm

Doppler-free spectra of ¹³⁰Te₂ have been investigated in the region of 486 nm, close to the Balmer-β transitions atomic hydrogen and deuterium. The frequency ratios between a 633 nm He-Ne laser stabilized to the 11-5 R(127) “i” transition in ¹²⁷I₂ and two of these ¹³⁰Te₂ Doppler-free components have been measured interferometrically to a precision of 2 parts in 10¹⁰ (one standard deviation). These measured components constitute useful transfer standards for the measurement of absolute frequencies of both the Balmer-β transitions and the 243-nm two-photon 1S-2S transitions in hydrogen and deuterium.     

A laser system for the spectroscopy of highly charged bismuth ions

We present and characterize a laser system for the spectroscopy on highly charged ²⁰⁹Bi⁸²⁺ ions at a wavelength of 243.87?nm. For absolute frequency stabilization, the laser system is locked to a near-infra-red laser stabilized to a rubidium transition line using a transfer cavity based locking scheme. Tuning of the output frequency with high precision is achieved via a tunable rf offset lock. A?sample-and-hold technique gives an extended tuning range of several THz in the UV. This scheme is universally applicable to the stabilization of laser systems at wavelengths not directly accessible to atomic or molecular resonances. We determine the frequency accuracy of the laser system using Doppler-free absorption spectroscopy of Te₂ vapor at 488?nm. Scaled to the target wavelength of 244 nm, we achieve a frequency uncertainty of σ _{244 nm}=6.14?MHz (one standard deviation) over six days of operation.     

Preparation of conventional thermoelectric nanopowders by pulsed laser fracture in water: application to the fabrication of a pn hetero-junction

The technique of laser fracture in a liquid medium has been applied to the synthesis of n-type (Bi_0.95Sb_0.05)₂ (Te_0.95Se_0.05)₃ and p-type (Bi_0.2Sb_0.8)₂Te₃ semiconducting nanopowders which are the best conventional materials currently used for thermoelectric applications at ambient temperature. The nanopowders have been prepared with a high yield in an especially built-up cell. Laser fracture in water of micronsized powders has been applied, using a nanosecond Nd:YAG laser working at 532 nm. The obtained powders have been characterized by scanning and transmission electron microscopy and by X-ray diffraction. The mean diameter is about 10 nm and the phase of the initial powders is kept. To test the potentiality of these nanosized materials, we have shown the feasibility to produce a pn hetero-junction.     

Tunable frequency-controlled laser source in the near ultraviolet based on doubling of a semiconductor diode laser

Continuously tunable ultraviolet laser radiation at 397 nm was generated by doubling the output of a semiconductor diode laser. The fundamental radiation was provided by a 150 mW AlGaAs laser diode injected by a low-power AlGaAs laser diode which was frequency stabilized by optical feedback using a new scheme of a miniature external cavity. Second-harmonic generation was produced in a lithium-triborate crystal placed in a compact enhancement cavity. The fundamental radiation was used for sub-Doppler spectroscopy of the Ar I 4s ³ P ⁰ ₀–4p ¹ P ₁ transition at 795 nm; the second-harmonic radiation was used for spectroscopy of the Ca II 4² S _1/2–4² P _1/2 transition at 397 nm.     

Laser multiphoton mass spectroscopy of organometallic compounds: State selective and mass resolved detection of neutral fragment tellurium atoms from C2H5TeC2H5

Typical features in laser multiphoton ionization of organometallic compounds are well evident in the case of the diethyltelluride C₂H₅TeC₂H₅ molecule. The use of a tunable dye laser coupled with time-of-flight (TOF) mass spectroscopy has allowed to establish that a large amount of tellurium is eliminated from the parent molecule as a neutral atom either in its ground or low excited states. Sharp two- and three-photon atomic Te resonances, which give origin to extraproduction of Te⁺ ions, have been identified in the optical spectra measured by varying the laser wavelength.     

Analyses of surface coloration on TiO2 film irradiated with excimer laser

TiO₂ film of around 850 nm in thickness was deposited on a soda-lime glass by PVD sputtering and irradiated using one pulse of krypton-fluorine (KrF) excimer laser (wavelength of 248 nm and pulse duration of 25 ns) with varying fluence. The color of the irradiated area became darker with increasing laser fluence. Irradiated surfaces were characterized using optical microscopy, scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Surface undergoes thermal annealing at low laser fluence of 400 and 590 mJ/cm². Microcracks at medium laser fluence of 1000 mJ/cm² are attributed to surface melting and solidification. Hydrodynamic ablation is proposed to explain the formation of micropores and networks at higher laser fluence of 1100 and 1200 mJ/cm². The darkening effect is explained in terms of trapping of light in the surface defects formed rather than anatase to rutile phase transformation as reported by others. Controlled darkening of TiO₂ film might be used for adjustable filters.     

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge₂Sb₂Te₅ films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm², respectively.     

Laser frequency stabilization at 1.5 microns using ultranarrow inhomogeneous absorption profiles in Er:LiYF4

Single-frequency diode lasers have been frequency stabilized to 1.5 kHz Allan deviation over 0.05-50 s integration times, with laser frequency drift reduced to less than 1.4 kHz/min, using the frequency reference provided by an ultranarrow inhomogeneously broadened Er³⁺:⁴I_15/2→⁴I_13/2 optical absorption transition at a vacuum wavelength of 1530.40 nm in a low-strain LiYF₄ crystal. The 130 MHz full-width at half-maximum (FWHM) inhomogeneous line width of this reference transition is the narrowest reported for a solid at 1.5 μm. Strain-induced inhomogeneous broadening was reduced by using the single isotope ⁷Li and by the very similar radii of Er³⁺ and the Y³⁺ ions for which it substitutes. To show the practicability of cryogen-free cooling, this laser stability was obtained with the reference crystal at 5 K; moreover, this performance did not require vibrational isolation of either the laser or crystal frequency reference. Stabilization is feasible up to T=25 K where the Er³⁺ absorption thermally broadens to ∼500 MHz. This stabilized laser system provides a tool for interferometry, high-resolution spectroscopy, real-time optical signal processing based on spatial spectral holography and accumulated photon echoes, secondary frequency standards, and other applications such as quantum information science requiring narrow-band light sources or coherent detection.     

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

The amorphous-to-crystalline transition of Ge/Sb₂Te₃ nanocomposite multilayer films with various thickness ratios of Ge to Sb₂Te₃ were investigated by utilizing in situ temperature-dependent film resistance measurements. The crystallization temperature and activation energy for the crystallization of the multilayer films increased with the increase in thickness ratio of Ge to Sb₂Te₃. The difference in sheet resistance between amorphous and crystalline states could reach as high as 10⁴ Ω/□. The crystallization temperature and activation energy for the crystallization of Ge/Sb₂Te₃ nanocomposite multilayer films was proved to be larger than that of conventional Ge₂Sb₂Te₅ film, which ensures a better data retention for phase-change random access memory (PCRAM) use. A data retention temperature for 10 years of the amorphous state [Ge (2 nm)/Sb₂Te₃ (3 nm)]₄₀ film was estimated to be 165 °C. Transmission electron microscopy (TEM) images revealed that Ge/Sb₂Te₃ nanocomposite multilayer films had layered structures with clear interfaces.     

F2 laser induced oxidation of inorganic material

Transparent SiO₂ thin films were selectively fabricated on Si wafer by 157 nm F₂ laser in N₂/O₂ gas atmosphere. The F₂ laser photochemically produced active O(¹D) atoms from O₂ molecules in the gas atmosphere; strong oxidation reaction could be induced to fabricate SiO₂ thin films only on the irradiated areas of Si wafer. The oxidation reaction was sensitive to the single pulse fluence of F₂ laser. The irradiated areas were swelled and the height was approximately 500-1000 nm at the 205-mJ/cm² single pulse fluence for 60 min laser irradiation. The fabricated thin films were analytically identified to be SiO₂ by the Fourier-transform IR spectroscopy. The SiO₂ thin films could be also removed by subsequent chemical etching to fabricate micro-holes 50 nm in depth on Si wafer for microfabrication.     

Iodine hyperfine structure and absolute frequency measurements at 565, 576, and 585 nm

The hyperfine structure splittings of the P(10)14-1, R(15)14-1, and R(99)15-1 transitions at 585 nm, P(62)17-1 at 576 nm, and P(80)21-1 at 565 nm in ¹²⁷I₂ are measured by heterodyne spectroscopy using two dye lasers. In addition, the absolute frequencies of the hyperfine components P(10)14-1 a₁₅ and P(80)21-1 a₁₀ are determined using a self-referenced frequency comb. These frequencies are used in an experiment testing relativistic time dilation by laser spectroscopy on a fast ion beam.     

Spectroscopic studies of laser-produced plasmas formed in CO and CO2 using 193, 266, 355, 532 and 1064 nm laser radiation

The wavelength dependence of laser-produced breakdown in air, CO and CO₂ has been studied using the four Nd:YAG harmonics (266 nm, 355 nm, 532 nm and 1064 nm) and the ArF-excimer laser (193 nm). Breakdown thresholds at these wavelengths are reported for air, CO and CO₂. A significant reduction in the breakdown thresholds for both CO and CO₂ is apparent when comparing 193 nm with the four Nd:YAG harmonics. This reduction is attributed to the resonance-enhanced two-photon ionization of metastable carbon atoms generated in the laser focus at the ArF-laser wavelength. In addition to reporting breakdown thresholds, the laser-produced plasmas in CO and CO₂ are characterized in terms of plasma temperatures and electron densities which are measured by time-resolved emission spectroscopy. Electron densities range from 9 × 10¹⁷ cm^–3 to 1 × 10₁₇ cm^–3. Excitation temperatures range from 22 000 K at 0.2 µs to 11 000 K at 2 µs. Ionization temperatures range from 22 000 K at 0.1 µs to 16 000 K at 2 µs. Evidence is presented to indicate that, like ArF-laser-produced plasmas, Nd:YAG-laser-produced plasmas formed in CO and CO₂ are in or near a state of Local Thermodynamic Equilibrium (LTE) soon after their formation.     

Pulsed UV-laser-induced chemistry of perfluoropolyether lubricant film

We investigate the molecular structure change of laser-irradiated perfluoropolyether lubricant on disk media by using mass spectroscopy. A KrF excimer laser with a wavelength of 248 nm was used to irradiate the lubricant film (2 nm) on a carbon overcoat surface. We found that two unique mass peaks emerged from the laser-irradiated lubricant mass spectra, which are attributed to OH-CHF-O(:H⁺)-CHF-OH and F-COO-CF₂-CF₂-CF₂-CF₂ ⁺ respectively. When thelaser fluence increases to 100 mJ/cm², these two unique mass peaks start to be enhanced drastically while the abundance of the end group of the lubricant, CF₂CH₂OH, remains almost constant, indicating that the two unique species are generated from the scission and re-arrangement of the backbone ether chains. With a laser fluence beyond 140 mJ/cm², the disk media surface damage is observable and lubricant evaporation is the main pathway. Received: 24 October 2001 / Accepted: 3 December 2001 / Published online: 3 May 2002     

Ultraviolet-Visible Spectroscopic Investigation of Reaction of Rubidium and Tellurium in Liquid Ammonia Solution

The sequential reaction of tellurium with rubidium in liquid ammonia solution has been monitored by ultraviolet-visible spectroscopy. Reaction times for rubidium with tellurium in liquid ammonia were markedly slower than those of sodium and potassium, and the “yellow phase” intermediate was long lived and exhibited a peak at approximately 330 nm with a broad shoulder at about 440 nm. Species formed agree with those previously reported: Rb₂Te, Rb₂Te₂, and Rb₂Te₃. Rb₂Te₂ solution was a violet-blue with absorbance peaks at 285.8, 324.3, 358.0, and 560.0 nm. No evidence of disproportionation reactions for rubidium polytellurides in liquid ammonia was observed.     

Electrodeposition of n-type Bi2Te3−ySey thermoelectric thin films on stainless steel and gold substrates

Thermoelectric films of n-Bi₂Te_3−ySe_y were prepared by potentiostatic electrodeposition technique onto stainless steel and gold substrates at room temperature. These films were used for morphological, compositional and structural analysis by environment scanning electron microscope (ESEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The effect of different substrates on the structure and morphology of Bi₂Te_3−ySe_y films and relation between Se content in the electrodepositing solutions and in the films were also investigated. These studies revealed that Bi, Te and Se could be co-deposited to form Bi₂Te_3−ySe_y semiconductor compound in the solution containing Bi³⁺, HTeO₂⁺ and H₂SeO₃. The morphology and structure of the films are sensitive to the substrate material. The doped content of Se element in the Bi₂Te_3−ySe_y compound can be controlled by adjusting the Se⁴⁺ concentration in the electrodepositing solution. X-ray diffraction analysis indicates that the films prepared at −40 mV versus saturated calomel electrode (SCE) exhibit strong (1 1 0) orientation with rhombohedral structure.     

Ultrashort-pulse laser ablation of indium phosphide in air

Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be φ_th(1)=0.16 J/cm². The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy. Received: 30 May 2000 / Accepted: 31 May 2000 / Published online: 23 August 2000     

Fourier spectroscopic investigations of 130Te2 infrared fluorescence and new optically pumped continuous laser lines

Laser-induced fluorescence of ¹³⁰Te₂, excited by Ar⁺ 4765-Å and 4579-Å lines, has been recorded in the infrared by Fourier transform spectrometry. Twelve fluorescence series have been identified and analyzed. A local perturbation has been observed using rotational relaxation lines. With a sealed-off cell of 7 cm leghth at a temperature around 650°C, continuous laser operation on 13 new lines in the range of 0.8 to 1.3 μm has been achieved. Typical threshold pump powers are about 100 mW. Pump and laser transitions are assigned using the obtained Fourier spectroscopic data.     

Two-color polarization spectroscopy of rubidium

We report on two-color, two-photon polarization spectroscopy in a room-temperature rubidium vapor. We use two separate lasers, a strong pump at 780 nm to induce an anisotropy in the atomic polarization and a weak probe at 776 nm to interrogate this anisotropy. The lasers are resonant with the 5²S_1/2 → 5²P_3/2 and 5²P_3/2 → 5²D_5/2 transitions in rubidium, respectively. Finally, we have used our polarization spectroscopy signal as an error signal to lock the 776 nm laser. This modulation-free locking scheme allows us to detune the lock point of the second laser by adjusting the detuning of the laser used for the first transition.