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1.
采用化学溶液沉积法(CSD),在758℃到772℃不同温度下制备了一系列YBa2Cu3Ox(YBCO)薄膜。通过X射线衍射、扫描电镜观察和物性测量,研究了外延温度对其结构与性能的影响。研究结果表明,在760℃及770℃附近存在两个适合YBCO薄膜外延生长的温度区间,在这两个温区生长制备的YBCO薄膜具有良好的超导性能。760℃和770℃附近制备的样品的临界超导转变温度Tc分别为90K和89K,说明760℃附近的较低温区更适合YBCO薄膜的外延生长。760℃附近生长的薄膜在77K自场下的临界电流密度Jc可达到3MA/cm2。文中进一步对存在两个外延温区间的现象进行了讨论,其机制可能来源于自发形核与诱导外延生长之间的相互竞争。  相似文献   

2.
三氟乙酸盐金属有机物沉积(TFA-MOD)方法是制备YBa2Cu3O7(YBCO)超导薄膜最有应用前景的方法之一。采用快速前处理TFA-MOD的方法在LaAlO3单晶基片上生长YBCO薄膜并与常规的TFA-MOD方法进行对比研究。XRD分析表明用快速前处理TFA-MOD方法制备的YBCO薄膜的c轴取向一致性,没有常规的TFA-MOD制备的YBCO薄膜好。SEM的分析表明快速前处理TFA-MOD制备的YBCO超导薄膜表面有孔洞和YBCO(103)取向生长的晶粒,常规方法制备的YBCO薄膜表面比较光滑,孔洞较少。虽然较常规方法制备的薄膜的临界电流密度(JC)低,但超导电性能分析表明,快速前处理方法制备的YBCO薄膜JC达到1mA/cm2以上,且前处理时间大幅缩短,对于提高YBCO薄膜制备的效率非常有效。  相似文献   

3.
研究了TFA-MOD法在铝酸镧基体上制备YBCO超导薄膜时不同初始热处理温度对薄膜的影响。通过XRD、Ram an光谱和SEM等手段,对生长过程中的YBCO超导薄膜结构进行表征、分析,探讨了YBCO的生长机制。  相似文献   

4.
超导薄膜所受的应力对其临界转变温度Tc具有重要的影响,研究应力对超导薄膜Tc的影响对获得更高Tc材料具有重要意义.本文采用溶胶-凝胶法,在LAO单晶基板上制备了Y2O3/YBCO薄膜,并研究了Y2O3缓冲层对不同厚度YBCO超导薄膜的临界转变温度的影响.研究发现,当YBCO薄膜厚度为90nm时,由于Y2O3和YBCO薄膜的晶格错配,在YBCO/Y2O3薄膜的a-b面内引入了压应力,增加了c轴的晶格常数,结果提高了YBCO薄膜的临界转变温度.当YBCO薄膜的厚度较大时(如230nm),由晶格错配引起的应力通过位错的形式得以释放,YBCO薄膜的Tc变化不大.  相似文献   

5.
采用先电子束沉积后退火的两步法制备YBCO超导薄膜;根据薄膜的超导临界电流密度、X射线衍射(XRD)和扫描电镜(SEM)的测试结果,研究了不同预处理气氛对YBCO薄膜结构、表面形貌及超导性能的影响。  相似文献   

6.
用传统的三氟乙酸盐—金属有机化合物热解法(简称TFA-MOD)来制备YBCO超导薄膜,由于制备时间长,不利于工业化.本文通过加入高沸点螯合剂二乙醇胺来改善前驱液性质,然后采用高温烧结一步法快速制备出完整的YBCO超导薄膜.制备的YBCO超导薄膜致密、几乎无a轴晶粒,YBCO(00l)峰具有立方取向,没有其他杂相峰.同时...  相似文献   

7.
YBa2Cu3O7-x(YBCO)膜存在“厚度效应”: 随着厚度增加, YBCO薄膜的临界电流密度下降, 尤其是YBCO薄膜的厚度超过1 μm时, 它的临界电流密度急剧下降. 本文在YBCO薄膜之间引入极薄的二氧化铈(CeO2)薄膜, 成功制备出结构为YBCO/YBCO/CeO2/YBCO的超导厚膜. 所制备的厚度为2 μm的YBCO膜临界电流密度为1.36 MA/cm2 (77 K, 自场), 其性能比相同厚度的纯YBCO膜有了较大幅度的提升. 研究表明CeO2薄膜起到了传递织构、松弛应力的作用.  相似文献   

8.
文中采用无氟高分子辅助金属有机物沉积法( PA - MOD)在不同湿度条件下在LaAlO3单晶基底上制备了一系列YBCO超导薄膜.X射线衍射、扫描电镜和物性测量的结果表明,在成相热处理过程中气氛湿度对YBCO薄膜的结构和超导性能的有明显影响.干燥气氛成相的YBCO薄膜织构较好,表面较平整、致密,超导性能也较高,其临界超...  相似文献   

9.
采用脉冲激光沉积和化学溶液沉积相结合制备超导薄膜. 在物理法制备的 YGdBCO 薄膜上实现化学法YBCO+BHO 的同质外延生长. 利用 X 射线衍射和扫描电镜对复合薄膜的相组成、 织构和形貌进行了表征. 结果表明, 采用化学溶液沉积可以在 YGdBCO 层上制备出高性能的 YBCO+BHO 薄膜. 复合薄膜具有良好表面形貌和锐利织构, 而且复合薄膜在77 K、1 T 的磁场下J c 为0.3 MA/cm2 , 最大钉扎力达到3 GN/m3 .  相似文献   

10.
化学修饰的Sol-Gel法因无需光刻胶、腐蚀液被用于YBCO薄膜图形的制备。以丙烯酸(AA)、苯酰丙酮(BzAcH)作为化学修饰剂制备YBCO薄膜图形,研究了化学修饰剂、光源、前烘温度和时间、溶洗剂对薄膜图形的最小线宽和质量的影响。  相似文献   

11.
Epitaxial YBa2Cu3Oy (YBCO) thin films have been fabricated by chemical solution deposition (CSD) on La2Zr2O7-buffered YSZ single crystal substrate, where the buffer layer has three kinds of morphology – flat surface, rough surface and pore surface. The effect of LZO buffer layer’s roughness on the YBCO films was evaluated by X-ray diffraction, scanning electron microscopy and temperature-dependent resistivity measurements. The flat surface of LZO layer is beneficial to highly epitaxial YBCO films and high critical current density.  相似文献   

12.
Superconducting thick films were grown on single crystals MgO and YSZ by electrophoretic deposition with Y_2BaCuO_5(Y211) addition. YBCO thick films were then accomplished by sintering the precursor films above the peritectic temperature. Single crystals of MgO (3×3×0.5 mm^3) were used as top-seed to control crystal structure of the thick films. As shown by scanning electron microscopy, the morphologies of YBCO/YSZ and YBCO/MgO thick films are spherulitic texture and platelet type. The critical temperature is ~89 K for the YBCO/YSZ thick film; the onset transition temperature is 86.4 K and the transition width is ~3 K for YBCO/MgO thick film. The critical current densities (as determined by Bean model) are, in A/cm^2, 3870 (77 K) for YBCO/YSZ thick films and 2399 (77 K) for YBCO/MgO thick films, which are comparable to the best J_c reported of the thick films prepared by the same method.  相似文献   

13.
YBa2Cu3O7−x (YBCO) films have been prepared on LaAlO3 (1 0 0) substrates by chemical solution deposition using metal trifluoroacetates. The influence of relative humidity in coating circumstance on the morphology of YBCO films was examined by optical microscopy and atomic force microscopy. The crack-free YBCO film was obtained if the relative humidity in coating circumstance was lower than 30%. During the decomposition step, the influences of the water vapor partial pressure and the heating rate within the temperature range from 200 °C to 320 °C were discussed. A smooth YBCO pyrolzed film could be obtained if the suitable water vapor partial pressure and the suitable heating rate within the temperature range from 200 °C to 320 °C were chosen. Furthermore, the smooth crystallized films show a high critical current density of 3 MA/cm2 at 77 K.  相似文献   

14.
MOD法在BaPbO_3/LaAlO_3上沉积YBa_2Cu_3O_(7-σ)层的研究   总被引:1,自引:0,他引:1  
实验配制了一种新型的YBCO前驱溶液,经过旋转涂覆和适当的热处理工艺,在单晶LaAlO3(100)基底和以BaPbO3为缓冲层的LaAlO3基底两种结构上外延生长YBa2Cu3O7-σ(YBCO)超导层。XRD结果表明:在两种结构上均生长了单相的YBCO层,YBCO晶粒沿垂直于基底表面的c轴方向外延生长。这种择优性在以BaPbO3为缓冲层的YBCO结构中更加明显。SEM结果表明,在两种结构上均形成致密的YBCO层。  相似文献   

15.
YBCO films without and with dilute cobalt and zinc doping were prepared on (0 0 l) LaAlO3 substrate by non-fluorine metal organic deposition method. Effects of dilute cobalt and zinc doping on biaxial texture, microstructure and flux-pinning properties of YBCO films were investigated. The surface density and smoothness of the doped YBCO films have been distinctly improved compared with that of the pure film. Dilute cobalt- and zinc-doped YBCO films exhibit significantly enhanced Jc values in the magnetic field. The best result is achieved in the cobalt-doped YBCO film. At 77 K, Jc values of cobalt-doped film are 1.7 and 5.4 times higher than that of pure film in 0.5 T and 1.5 T, respectively. These results strongly suggest that dilute cobalt and zinc doping is a promising way to increase the current carrying capability of YBCO films.  相似文献   

16.
文中对化学溶液沉积法快速制备YBCO薄膜的工艺进行了探索。通过对分解工艺的优化,成功将薄膜的干燥分解时间缩短到1小时以内,而传统工艺则需要10小时以上的处理时间。以快速分解工艺成相的YBCO薄膜的X射线衍射、扫面电镜和物性测量结果表明薄膜具有良好的c轴外延织构,表面微观形貌平整致密,临界超导转变温度(Tc)为92K。  相似文献   

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