A density functional theory study of CH4 dehydrogenation on Co(1 1 1)

The dehydrogenation of CH₄ on the Co(1 1 1) surface is studied using density functional theory calculation (DFT). It is found that CH₄ is favored to dissociate to CH₃ and then transforms to CH₂ and CH by sequential dehydrogenation, and CH₄ activation into CH₃ and H is the rate-determining step on the Co(1 1 1) surface. CH₂ is quite unstable on Co(1 1 1) surface. CH dehydrogenation into C and H is difficult. CH₃ and H prefer to adsorb on 3-fold hollow hcp and fcc sites, and CH₂, CH and C prefer to adsorb on hcp sites.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

Fabrication of nanostructures by selective growth of C60 and Si on Si(1 1 1) substrate

Using two types of selective growth, selective C₆₀ growth and selective Si growth, on a common Si(1 1 1) substrate, an array of C₆₀ nanoribbons with controlled values of width and thickness is fabricated. On a surface that has Si(1 1 1)√3 × √3R30°-Ag (referred to as Si(1 1 1)√3-Ag hereafter) and bare Si(1 1 1) regions at the same time, the preferential growth of C₆₀ multilayered film is recognized on the Si(1 1 1)√3-Ag region. The growth of Si selectively occurs on a bare Si(1 1 1) region if the substrate surface has C₆₀-adsorbed and bare Si(1 1 1) regions at the same time. As a demonstration of the use of these selective growths, we fabricate an array of well-isolated C₆₀ nanoribbons, which show a well-ordered molecular arrangement and have sizes of about 40 nm in widths and 3-4 nm in thicknesses.     

CO2 adsorption on the bimetallic Zn-on-Cu(1 1 0) system

Adsorption probability measurements (molecular beam scattering) have been conducted to examine the adsorption dynamics (i.e. the gas-surface energy transfer processes) of CO₂ adsorption on the Zn-on-Cu(1 1 0) bimetallic system. The results indicate surface alloy formation, which is in agreement with prior studies. Depositing Zn at 300 K on Cu(1 1 0), above the condensation temperature of CO₂, leads to a “blocking” of CO₂ adsorption sites by Zn which is incorporated in the Cu(1 1 0) surface. This apparent site blocking effect indicates a lowering of the CO₂ binding energy on the alloyed surface as compared with the clean Cu(1 1 0) support. The Zn coverage has been calibrated by Auger electron spectroscopy and thermal desorption spectroscopy.     

First-principle study of NO adsorption on the LaFeO3 (0 1 0) surface

The adsorption of NO molecule on the LaFeO₃ (0 1 0) surface was studied using first-principle calculations based on density functional theory. The calculated results indicate that the Fe-top site is the most favorable for NO adsorption. The N-O bond length, Mulliken charge, and the N-O vibration frequency of the NO molecule are discussed after adsorption. The analysis results of the density of the states show that when NO is adsorbed with the Fe-NO configuration, the bonding mechanism is mainly from the interaction between the NO and the Fe d orbit.     

Growth of nano-crystalline metal dots on the Si(1 1 1)-7 × 7 surface saturated with C2H5OH

Metal atom on the Si(1 1 1)-7 × 7 surface undergoes migration by hopping among Si-adatom and Si-rest atom. If the hopping migration is prohibited, how change the deposited metals? In this paper, we studied the deposition of metals on the Si(1 1 1)-7 × 7 surface saturated with C₂H₅OH, on which the whole Si-rest atoms are changed to Si-H so that the hoping migration of metals will be prohibited. We found the growth of ca. 5 nm of crystalline dots by the deposition of Sn, Zn and Ag. Interestingly, Ag dots undergo layer-by-layer growth so that the surface is covered with 5 nm size dots with uniform height. When the hopping migration is prohibited, growth of dots is controlled by the kinetics of precursor state atoms instead of the lattice energy relating to lattice matching or strain.     

Au adsorption and Au-mediated charge transfer on the SrO-termination of SrTiO3 (0 0 1) surface

Atomic Au adsorption on the SrO-termination of SrTiO₃ (0 0 1) surface has been studied by means of the first-principles calculations based on the density functional theory (DFT). It indicates that charge polarization dominantly contributes to the bonding between Au and SrO-termination. Interfacial charge transfer induces dipole moment and changes work function. The mediating role Au played in charge transfer from electron-doped SrTiO₃:Nb to NO has been simulated. Charge transfer from SrTiO₃:Nb to Au is ascertained indicating that Au plays as an electron trapping center. SrO-termination has weak activity to NO while the molecule can be strongly adsorbed on negatively charged Au atom. It has been represented that Au mediates the charge transfer from SrTiO₃:Nb to NO. Antibonding orbital (π_2p*) of NO accommodates the charge and thus molecular bond is weakened (activated). Fukui functions demonstrate the role Au played in transiting the charge transfer from electronically excited SrTiO₃ to target species. Evidence that metal deposited on photocatalyst surface effectively separates the electron-hole pairs and improves the photocatalytic activity is presented in the current work.     

Low temperature adsorption of oxygen on reduced V2O3(0 0 0 1) surfaces

Well ordered V₂O₃(0 0 0 1) films were prepared on Au(1 1 1) and W(1 1 0) substrates. These films are terminated by a layer of vanadyl groups under typical UHV conditions. Reduction by electron bombardment may remove the oxygen atoms of the vanadyl layer, leading to a surface terminated by vanadium atoms. The interaction of oxygen with the reduced V₂O₃(0 0 0 1) surface has been studied in the temperature range from 80 to 610 K. Thermal desorption spectroscopy (TDS), infrared reflection absorption spectroscopy (IRAS), high resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) were used to study the adsorbed oxygen species. Low temperature adsorption of oxygen on reduced V₂O₃(0 0 0 1) occurs both dissociatively and molecularly. At 90 K a negatively charged molecular oxygen species is observed. Upon annealing the adsorbed oxygen species dissociates, re-oxidizing the reduced surface by the formation of vanadyl species. Density functional theory was employed to calculate the structure and the vibrational frequencies of the O₂ species on the surface. Using both cluster and periodic models, the surface species could be identified as η²-peroxo () lying flat on surface, bonded to the surface vanadium atoms. Although the O-O vibrational normal mode involves motions almost parallel to the surface, it can be detected by infrared spectroscopy because it is connected with a change of the dipole moment perpendicular to the surface.     

The corrosion behavior of intermetallic compounds Ni3(Si,Ti) and Ni3(Si,Ti) + 2Mo in acidic solutions

The corrosion behavior of the intermetallic compounds homogenized, Ni₃(Si,Ti) (L1₂: single phase) and Ni₃(Si,Ti) + 2Mo (L1₂ and (L1₂ + Ni_ss) mixture region), has been investigated using an immersion test, electrochemical method and surface analytical method (SEM; scanning electron microscope and EPMA: electron probe microanalysis) in 0.5 kmol/m³ H₂SO₄ and 0.5 kmol/m³ HCl solutions at 303 K. In addition, the corrosion behavior of a solution annealed austenitic stainless steel type 304 was studied under the same experimental conditions as a reference. It was found that the intergranular attack was observed for Ni₃(Si,Ti) at an initial stage of the immersion test, but not Ni₃(Si,Ti) + 2Mo, while Ni₃(Si,Ti) + 2Mo had the preferential dissolution of L1₂ with a lower Mo concentration compared to (L1₂ + Ni_ss) mixture region. From the immersion test and polarization curves, Ni₃(Si,Ti) + 2Mo showed the lowest corrosion resistance in both solutions and Ni₃(Si,Ti) had the highest corrosion resistance in the HCl solution, but not in the H₂SO₄ solution. For instance, it was found that unlike type 304 stainless steel, these intermetallic compounds were difficult to form a stable passive film in the H₂SO₄ solution. The results obtained were explained in terms of boron segregation at grain boundaries, Mo enrichment and film stability (or strength).     

Formamide reactions on rutile TiO2(0 1 1) surface

The reaction of formamide over the (0 1 1) faceted TiO₂(0 0 1) surface has been studied by Temperature Programmed Desorption (TPD) and X-ray Photoelectron Spectroscopy (XPS). Two main reactions were observed: dehydration to HCN and H₂O and decomposition to NH₃ and CO. The dehydration reaction was found to be three to four times larger than the decomposition at all coverages. Each of these reactions is found to occur in two temperature domains which are dependent upon surface coverage. The low temperature pathway (at about 400 K) is largely insensitive to surface coverage while the high temperature pathway (at about 500 K) shifts to lower temperatures with increasing surface coverage. These two temperature pathways may indicate two adsorption modes of formamide: molecular (via an η¹(O) mode of adsorption) and dissociative (via an η²(O,N) mode of adsorption). C1s and N1s XPS scans indicated the presence of multiple species after formamide absorption at 300 K. These occurred at ca. 288.5 eV (-CONH-) and 285 eV (sp³/sp² C) for the C1s and 400 eV-(NH₂), 398 eV (-NH) and 396 eV (N) for the N1s and result from further reaction of formamide with the surface.     

Density functional theory calculations of surface properties and H2 adsorption on the Cu2O (1 1 1) surface

First-principles calculation on the basis of the density functional theory (DFT) and generalized gradient approximation have been applied to study the adsorption of H₂ on the stoichiometric O-terminated Cu₂O (1 1 1), Cu₂O (1 1 1)-Cu_CUS and Cu-terminated Cu₂O (1 1 1) surfaces. The optimal adsorption position and orientation of H₂ on the stoichiometric O-terminated Cu₂O (1 1 1) surface and Cu-terminated Cu₂O (1 1 1) surface were determined and electronic structural changes upon adsorption were investigated by calculating the Local Density of States (LDOS) of the Cu_CUS 3d and Cu_CUS 4s of stoichiometric O-terminated Cu₂O (1 1 1) surface. These results showed that H₂ molecule adsorption on Cu_CUS site parallel to stoichiometric O-terminated Cu₂O (1 1 1) surface and H₂ molecule adsorption on Cu₂ site parallel to Cu-terminated Cu₂O (1 1 1) surface were the most favored, respectively. The presence of surface copper vacancy has a little influence on the structures when H₂ molecule adsorbs on Cu_CSA, O_CUS and O_CSA atoms and the H₂ molecule is only very weakly bound to the Cu₂O (1 1 1)-Cu_CUS surface. From the analysis of stoichiometric O-terminated Cu₂O (1 1 1) Local Density of States, it is observed that Cu_CUS 3d orbital has moved to a lower energy and the sharp band of Cu_CUS 4s is delocalized when compared to that before H₂ molecule adsorption, and overlapped substantially with bands due to adsorbed H₂ molecule. The Mulliken charges of H₂ adsorption on Cu_CUS site showed that H₂ molecule obtained electron from Cu_CUS which was consistent with the calculated electronic structural changes upon H₂ adsorption.     

STM image visualization of Si(1 1 1) 7 × 7 surface (graphic simulation and implementation)

The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 × 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

First-principles calculations on electronic structures of Fe-vacancy-codoped TiO2 anatase (1 0 1) surface

The electronic structures of Fe-doped TiO₂ anatase (1 0 1) surfaces have been investigated by all spin-polarized density functional theory (DFT) plane-wave pseudopotential method. The general gradient approximation (GGA)+U (Hubbard coefficient) method has been adopted to describe the exchange-correlation effects. Through the density functional calculations for the formation energies of various configurations, the complex of a substitutional Fe plus an O vacancy was found to form easily in the most range of O chemical potential. The calculated density of the states of the system of Fe-doped surface with a surface oxygen vacancy shows a band gap narrowing from 2.8 to 1.9 eV comparing with the pure surface due to the synergistic effects of surface Fe impurities with O vacancies. The system processes high visible light sensitivity and photocatalytic ability by decreasing extrinsic absorption energy. By comparing the partial DOS of some O and Ti atoms lying in the outermost and bottom layers of Fe-doped surfaces, it was found that the influence of Fe impurities on the electronic structure of the system is localized.     

A theoretical investigation on Pt3Sn(1 0 2) surface alloy and CO-Pt3Sn(1 0 2) system

The adsorption properties of CO on experimentally verified stepped Pt₃Sn(1 0 2) surface were investigated using quantum mechanical calculations. The two possible terminations of Pt₃Sn(1 0 2) were generated and on these terminations all types of possible adsorption sites were determined. The adsorption energies and geometries of the CO molecule for all those sites were calculated. The most favorable sites for adsorption were determined as the short bridge site on the terrace of pure-Pt row of the mixed-atom-ending termination, atop site at the step-edge of the pure row of pure-Pt-ending termination and atop site at the step-edge of the pure-Pt row of the mixed-atom-ending termination. The results were compared with those for similar sites on the flat Pt₃Sn(1 1 0) surface considering the fact that Pt₃Sn(1 0 2) has terraces with (1 1 0) orientation. The LDOS analysis of bare sites clearly shows that there are significant differences between the electronic properties of Pt atoms at stepped Pt₃Sn(1 0 2) surface and the electronic properties of Pt atoms at flat (1 1 0) surface, which leads to changes in the CO bonding energies of these Pt atoms. Adsorption on Pt₃Sn(1 0 2) surface is in general stronger compared to that on Pt₃Sn(1 1 0) surface. The difference in adsorption strength of similar sites on these two surface terminations is a result of stepped structure of Pt₃Sn(1 0 2). The local density of states (LDOS) of the adsorbent Pt and C of adsorbed CO was utilized. The LDOS of the surface metal atoms with CO-adsorbed atop and of their bare state were compared to see the effect of CO chemisorption on the electron density distribution of the corresponding Pt atom. The downward shift in energy peak in the LDOS curves as well as changes in the electron densities of the corresponding energy levels indicate the orbital mixing between CO molecular orbitals and metal d-states. The present study showed that the adsorption strength of the sites has a direct relation with their LDOS profiles.     

A DFT study on the formation of CH3O on Cu2O(1 1 1) surface by CH3OH decomposition in the absence or presence of oxygen

The formation mechanism of CH₃O by the adsorption and decomposition of CH₃OH on clean and oxygen-precovered Cu₂O(1 1 1) surface has been investigated with density functional theory method together with the periodic slab models. Two possible formation pathways of CH₃O by CH₃OH decomposition on oxygen-precovered (O_pre) Cu₂O(1 1 1) surface were proposed and discussed. One is the O-H bond-cleavage of CH₃OH with H migration to O_pre to form CH₃O; the other is the C-O bond-scission of CH₃OH with CH₃ migration to O_pre leading to CH₃O_pre. The calculated results show that the O-H bond-breaking path has the lowest activation barrier 26.8 kJ mol⁻¹, the presence of oxygen-precovered on Cu₂O(1 1 1) surface exhibits a high surface reactivity toward the formation of CH₃O by the O-H bond-cleavage of CH₃OH, and reduce the activation barrier of O-H bond-cleavage. The C-O bond-breaking path was inhibited by dynamics, suggesting that the O atom of CH₃O is not from the oxygen-precovered, but comes from the O of CH₃OH. Meanwhile, the calculated results give a clear illustration about the formation mechanism of CH₃O in the presence of oxygen and the role of oxygen at the microscopic level.     

New tetramer structures in the initial process of Si homoepitaxial growth on Si (0 0 1)

We have studied the interaction between Si ad-dimers in the initial process of Si homoepitaxial growth on Si (0 0 1) surface by molecular dynamics simulations using the Stillinger-Weber potential. The interactions determine the formation of larger clusters from diffusing dimers. We show different pathways for the formation of multiple-dimer clusters and propose two new tetramer structures (T_BB and T_CC) formation by two diffusing dimers interacting. These tetramer structures have been found to be energetically stable with respect to isolated ad-dimers. Moreover, their local bonding configuration is very similar to the B-type step edge which is known to be the favored adsorption site for epitaxial growth. The proposed tetramers may play a crucial role as the nucleus of the new epitaxial layer on Si (0 0 1).     

Simplified method to prepare atomically-ordered TiO2(1 1 0)-(1 × 1) surfaces with steps and terraces

An effective way to prepare atomically-ordered rutile TiO₂(1 1 0) surfaces that have distinct step and terrace structures suitable for oxide thin film deposition is demonstrated. Only a two-step procedure, consisting of 20% HF etching and UHV-annealing at 1100 °C, was required to yield a clean (1 × 1) structure with step and terrace structures. Investigation of the surface using scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy reveals that carbon contamination is removed at around 800 °C, and straight steps with clear terraces appear at around 1000 °C.     

Growth of Al2O3 thin films on NiAl(1 0 0) by gas-phase oxidation and electro-oxidation

The growth and structures of aluminum oxides on NiAl(1 0 0) have been investigated by RHEED (reflection high energy electron diffraction), complemented by LEED (low energy electron diffraction), AES (Auger electron spectroscopy) and STM (scanning tunneling microscopy). Crystalline θ-Al₂O₃ phase grows through gas-phase oxidation on the NiAl(1 0 0) substrate with its a and b-axes parallel to [0 −1 0] and [0 0 1] direction of the substrate, respectively, forming a (2 × 1) unit cell. Whilst, three-dimensional nano-sized NiAl(1 0 0) protrusions and Al₂O₃, NiAl(0 1 1) clusters were found to co-exit at the surface, evidenced by extraordinary transmission spots superposed to the substrate reflection rods in the RHEED patterns. Particularly, the NiAl(0 1 1) clusters develop with their (0 1 1) plane parallel to the NiAl(1 0 0) surface, and [1 0 0] axis parallel to the [0 −1 1] direction of the substrate surface. STM observation combined with information from AES and TPD (temperature programmed desorption) suggest the formation of these 3D structures is closely associated with partial decomposition of the crystalline oxides during annealing. On the other hand, smoother (2 × 1) oxide islands with thickness close to a complete monolayer of θ-Al₂O₃ can be formed on NiAl(1 0 0) by electro-oxidation, in contrast with the large crystalline films formed by gas-oxidation.     

Room-temperature-adsorption behavior of acetic anhydride on a TiO2(1 1 0) surface

We have studied the adsorption structure of acetic anhydride on a TiO₂(1 1 0) surface using XPS (X-ray photoelectron spectroscopy), LEED (low energy electron diffraction) and HREELS (high resolution electron energy loss spectroscopy) to determine the origins of the unique adsorption properties of carboxylic acids on a TiO₂(1 1 0) surface. The C 1s XPS data indicated that the saturation carbon amount of adsorbed acetic anhydride was 12 ± 3% larger than that of the adsorbed acetic acid. LEED showed p(2 × 1) weak spots for the acetic anhydride adsorbed surface. The HREELS spectra revealed the dissociative adsorption of acetic anhydride. Based on these findings, we concluded that the neutralization of the bridging oxygen atoms associated with the dissociative adsorption is necessary for the stable adsorption of carboxylates on the 5-fold Ti sites.