Growth and morphology of the epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) Trilayers

Growth and surface morphology of epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(1 1 0) resulting in dense MgO(1 1 1) films at room temperature as well as at 250 °C. As observed by STM, initial deposition of MgO leads to a partial oxidation of the Fe(1 1 0) surface which is confirmed by Auger electron spectroscopy. The top Fe layer deposited on MgO(1 1 1) at room temperature is relatively rough consisting of clusters which can be transformed by annealing to an atomically flat epitaxial Fe(1 1 0) film.     

Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.     

Growth and characteristics of ZnO nano-aggregates electrodeposited onto p-Si(1 1 1)

In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodeposited zinc nanolayers on a monocrystalline p-Si(1 1 1) substrate.The electrolyte used is ZnCl₂, an aqueous solution of 4 × 10⁻² mol/l concentration. Several deposits were made for various current densities, ranging from 13 mA/cm² to 44 mA/cm², flowing through the solution at room temperature. A parametric study enabled us to assess the effect of the current density on nucleation potential and time as well as zinc films structure. The grazing incidence X-ray diffraction (GIXD) revealed that both Zn and ZnO films are polycrystalline and nanometric. After 1-h oxidation of zinc films at 450 °C in the open air, the structural analyses showed that the obtained ZnO films remained polycrystalline with an average crystal size of about 47 nm and with (1 0 0), (0 0 2) and (1 0 1) as preferential crystallographic orientations.     

In-situ study of the catalytic oxidation of CO on a Pt(1 1 0) surface using ambient pressure X-ray photoelectron spectroscopy

CO and O₂ co-adsorption and the catalytic oxidation of CO on a Pt(1 1 0) surface under various pressures of CO and O₂ (up to 250 mTorr) are studied using ambient pressure X-ray photoelectron spectroscopy (APXPS) and mass spectrometry. There is no surface oxide formation on Pt under our reaction conditions. CO oxidation in this pressure (<500 mTorr), O₂ to CO ratio (<10), and temperature (150 °C) regime is consistent with the Langmuir-Hinshelwood reaction mechanism. Our findings provide in-situ surface chemical composition data of the catalytic oxidation of CO on Pt(1 1 0) at total pressures below 1 Torr.     

Electrochemical scanning tunneling microscopy examination of the structures of benzenethiol molecules adsorbed on Au(1 0 0) and Pt(1 0 0) electrodes

In situ electrochemical scanning tunneling microscopy (STM) has been used to examine the structures of benzenethiol adlayers on Au(1 0 0) and Pt(1 0 0) electrodes in 0.1 M HClO₄, revealing the formation of well-ordered adlattices of Au(1 0 0)-(√2 × √5) between 0.2 and 0.9 V and Pt(1 0 0)-(√2 × √2)R45° between 0 and 0.5 V (versus reversible hydrogen electrode), respectively. The coverage of Au(1 0 0)-(√2 × √5) is 0.33, which is identical to those observed for upright alkanethiol admolecules on Au(1 1 1). In comparison, the coverage of Pt(1 0 0)-(√2 × √2)R45° - benzenethiol is 0.5, much higher than those of thiol molecules on gold surfaces. This result suggests that benzenethiol admolecules on Pt(1 0 0) could stand even more upright than those on Au(1 0 0). All benzenethiol admolecules were imaged by the STM as protrusions with equal corrugation heights, suggesting identical molecular registries on Au(1 0 0) and Pt(1 0 0) electrodes, respectively. Modulation of the potential of a benzenethiol-coated Au(1 0 0) electrode resulted in irreversible desorption of admolecules at E ? 0.1 V (vs. reversible hydrogen electrode) and oxidation of admolecules at E ? 0.9 V. In contrast, benzenethiol admolecule was not desorbed from Pt(1 0 0) at potentials as negative as the onset of hydrogen evolution. Raising the potential rendered deposition of more benzenethiol molecules before oxidation of admolecules commenced at E > 0.9 V.     

Benzene adsorption and oxidation on Ir(1 1 1)

Adsorption, decomposition and oxidation of benzene on Ir(1 1 1) was studied by high resolution (synchrotron) XPS, temperature programmed desorption and low energy electron diffraction. Molecular adsorption of benzene on Ir(1 1 1) is observed between 170 K and 350 K. Above this temperature both desorption and decomposition of benzene take place. An ordered adsorbate structure was observed upon adsorption around 335 K. Decomposition involves C-C bond breaking as the formation of CH_ad is observed. The presence of a saturated O_ad layer (0.5 ML) weakens molecular benzene adsorption and suppresses decomposition.     

Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

CO oxidation over Ru(0 0 0 1) at near-atmospheric pressures: From chemisorbed oxygen to RuO2

RuO₂(1 1 0) was formed on Ru(0 0 0 1) under oxygen-rich reaction conditions at 550 K and high pressures. This phase was also synthesized using pure O₂ and high reaction temperatures. Subsequently the RuO₂ was subjected to CO oxidation reaction at stoichiometric and net reducing conditions at near-atmospheric pressures. Both in situ polarization modulation infrared reflection absorption spectroscopy (PM-IRAS) and post-reaction Auger electron spectroscopy (AES) measurements indicate that RuO₂ gradually converts to a surface oxide and then to a chemisorbed oxygen phase. Reaction kinetics shows that the chemisorbed oxygen phase has the highest reactivity due to a smaller CO binding energy to this surface. These results also show that a chemisorbed oxygen phase is the thermodynamically stable phase under stoichiometric and reducing reaction conditions. Under net oxidizing conditions, RuO₂ displays high reactivity at relatively low temperatures (?450 K). We propose that this high reactivity involves a very reactive surface oxygen species, possibly a weakly bound, atomic oxygen or an active molecular O₂ species. RuO₂ deactivates gradually under oxidizing reaction conditions. Post-reaction AES measurements reveal that this deactivation is caused by a surface carbonaceous species, most likely carbonate, that dissociates above 500 K.     

Adsorption and reactivity of SO2 on Ir(1 1 1) and Rh(1 1 1)

The adsorption and reactivity of SO₂ on the Ir(1 1 1) and Rh(1 1 1) surfaces were studied by surface science techniques. X-ray photoelectron spectroscopy measurements showed that SO₂ was molecularly adsorbed on both the Ir(1 1 1) surface and the Rh(1 1 1) surface at 200 K. Adsorbed SO₂ on the Ir(1 1 1) surface disproportionated to atomic sulfur and SO₃ at 300 K, whereas adsorbed SO₂ on the Rh(1 1 1) surface dissociated to atomic sulfur and oxygen above 250 K. Only atomic sulfur was present on both surfaces above 500 K, but the formation process and structure of the adsorbed atomic sulfur on Ir(1 1 1) were different from those on Rh(1 1 1). On Ir(1 1 1), atomic sulfur reacted with surface oxygen and was completely removed from the surface, whereas on Rh(1 1 1), sulfur did not react with oxygen.     

A density functional theory study of ethylene adsorption on Ni10(1 1 1), Ni13(1 0 0) and Ni10(1 1 0) surface cluster models and Ni13 nanocluster

Ethylene adsorption was studied by use of DFT/B3LYP with basis set 6-31G(d,p) in Gaussian’03 software. It was found that ethylene has adsorbed molecularly on all clusters with π adsorption mode. Relative energy values were calculated to be −50.86 kcal/mol, −20.48 kcal/mol, −32.44 kcal/mol and −39.27 kcal/mol for Ni₁₃ nanocluster, Ni₁₀(1 1 1), Ni₁₃(1 0 0) and Ni₁₀(1 1 0) surface cluster models, respectively. Ethylene adsorption energy is inversely proportional to Ni coordination number when Ni₁₀(1 1 1), Ni₁₃(1 0 0) and Ni₁₀(1 1 0) cluster models and Ni₁₃ nanocluster are compared with each other.     

Scanning tunneling microscopy luminescence from nanoscale surface of GaAs(1 1 0)

Scanning tunneling microscopy luminescence (STML) was induced from the nanometer scale surfaces of cleaved n-type and p-type GaAs(1 1 0) wafers by using of an ITO-coated optical fiber probe in an ultrahigh-vacuum chamber. The STML from n-type GaAs(1 1 0) surface was induced under negative sample bias when the applied bias exceeds a threshold voltage around −1.5 V. Whereas the STML from p-type GaAs(1 1 0) surface was induced under positive sample bias when the applied bias exceeds a threshold voltage around +1.5 V. The excitation energies at the threshold voltages are consistent with the band gap of GaAs (1.42 eV) at 295 K. The typical quantum efficiencies for n-type and p-type GaAs are about 3 × 10⁻⁵ and 2 × 10⁻⁴ photons/electron, respectively. The observed STML from are attributed to a radiative recombination of electron-hole pairs generated by a hole injection for n-type GaAs under negative sample bias and an electron injection for p-type GaAs under positive sample bias, respectively.     

High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface

An initial oxidation dynamics of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface has been studied using high resolution X-ray photoelectron spectroscopy and supersonic molecular beams. Clean 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface was exposed to oxygen molecules with translational energy of 0.5 eV at 300 K. In the first step of initial oxidation, oxygen molecules are immediately dissociated and atomic oxygens are inserted into Si-Si back bonds to form stable oxide species. At this stage, drastic increase in growth rate of stable oxide species by heating molecular beam source to 1400 K was found. We concluded that this increase in growth rate of stable oxide is mainly caused by molecular vibrational excitation. It suggests that the dissociation barrier is located in the exit channel on potential energy hypersurface. A metastable molecular oxygen species was found to be adsorbed on a Si-adatom that has two oxygen atoms inserted into the back bonds. The adsorption of the metastable species is neither enhanced nor suppressed by molecular vibrational excitation.     

Simplified method to prepare atomically-ordered TiO2(1 1 0)-(1 × 1) surfaces with steps and terraces

An effective way to prepare atomically-ordered rutile TiO₂(1 1 0) surfaces that have distinct step and terrace structures suitable for oxide thin film deposition is demonstrated. Only a two-step procedure, consisting of 20% HF etching and UHV-annealing at 1100 °C, was required to yield a clean (1 × 1) structure with step and terrace structures. Investigation of the surface using scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy reveals that carbon contamination is removed at around 800 °C, and straight steps with clear terraces appear at around 1000 °C.     

Interaction of 2,2,6,6-tetramethyl-3,5-heptanedione with the Si(1 0 0)-2 × 1 surface: Scanning tunneling microscopy and density functional theory study

Room temperature adsorption and reaction of 2,2,6,6-tetramethyl-3,5-heptanedione (dpmH) on the Si(1 0 0)-2 × 1 surface has been studied with ultra-high vacuum scanning tunneling microscopy (UHV-STM) and temperature programmed desorption (TPD). The molecule is found to chemisorb as a mixture of at least five distinct species. Density functional theory (DFT) was used to calculate the structures and adsorption energies of 12 possible addition products. Unique bonding assignments for each experimental feature are proposed by consideration of a common intermediate reaction network, and a comparison of possible reaction pathways leading to the final products. These assignments are: OH inter-dimer dissociation, OH intra-dimer dissociation, 1,5 intra-dimer addition, 1,5 inter-dimer addition, and intra-dimer [2 + 2]CO addition with OH dissociation on an adjacent dimer. TPD and STM results show that the molecule dissociates completely upon annealing to 700 °C with formation of the c(4 × 4) phase at low exposures, and SiC islands for exposures exceeding 0.15 L.     

Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br-Si(1 0 0)-(2 × 1)

The desorption of Br adatoms from Br-saturated Si(1 0 0)-(2 × 1) was studied with scanning tunneling microscopy as a function of dopant type, dopant concentration, and temperature for 620-775 K. Analysis yields the activation energies and prefactors for desorption, and the former correspond to the energy separation between the Fermi level and Si-Br antibonding states. Thus, electron capture in long-lived states results in Br expulsion via a Franck-Condon transition. Analysis of the prefactors reveals that optical phonons provide the energy needed for the electronic excitation. These results show that desorption induced by an electronic transition can occur in closed system without external stimulus, and they indicate that thermally-excited charge carriers may play a general role in surface reactions.     

Carbon monoxide adsorption on the metastable fcc-Co/Cu(1 0 0) surface

The adsorption properties of CO on the epitaxial five-monolayer Co/Cu(1 0 0) system, where the Co overlayer has stabilized in the metastable fcc-phase, are reported. This system is known to exhibit metallic quantum well (MQW) states at energies 1 eV or greater above the Fermi level, which may influence CO adsorption. The CO/fcc-Co/Cu(1 0 0) system was explored with low energy electron diffraction (LEED), inverse photoemission (IPE), reflection-absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD). Upon CO adsorption, a new feature is observed in IPE at 4.4 eV above E_F and is interpreted as the CO 2π^∗ level. When adsorbed at room temperature, TPD exhibits a CO desorption peak at ∼355 K, while low temperature adsorption reveals additional binding configurations with TPD features at ∼220 K and ∼265 K. These TPD peak temperatures are correlated with different C-O stretch vibrational frequencies observed in the IR spectra. The adsorption properties of this surface are compared to those of the surfaces of single crystal hcp-Co, as well as other metastable thin film systems.     

Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Formation and characterization of the Cu2O overlayer on Zn-terminated ZnO(0 0 0 1)

Low-energy electron diffraction, X-ray photoelectron spectroscopy and synchrotron-radiation-excited angle-resolved photoelectron spectroscopy have been used to characterize Cu-oxide overlayers on the Zn-terminated ZnO(0 0 0 1) surface. Deposition of Cu on the ZnO(0 0 0 1)-Zn surface results in the formation of Cu clusters with (1 1 1) top terraces. Oxidation of these clusters by annealing at 650 K in O₂ atmosphere (1.3 × 10⁻⁴ Pa) leads to an ordered Cu₂O overlayer with (1 1 1) orientation. Good crystallinity of the Cu₂O(1 1 1) overlayer is proved by energy dispersion of one of Cu₂O valence bands. The Cu₂O(1 1 1) film exhibits a strong p-type semiconducting nature with the valence band maximum (VBM) of 0.1 eV below the Fermi level. The VBM of ZnO at the Cu₂O(1 1 1)/ZnO(0 0 0 1)-Zn interface is estimated to be 2.4 eV, yielding the valence-band offset of 2.3 eV.     

Adsorption of organic molecules by photochemical reaction on Cl:Si(1 1 1) and H:Si(1 1 1) evaluated by HREELS

The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH₄ or CH₂CH₂ was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C₂H₅Cl, C₂H₅ groups were chemically bonded to the surface Si atoms through single covalent bonds. The C₂H₅ groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.