A valence band photoemission study of Pb adsorption on Rh(1 0 0) and Rh(1 1 0)

We have studied the adsorption of Pb on the Rh(1 0 0) and (1 1 0) surfaces by photoemission and low energy electron diffraction (LEED), and tested the chemical properties by adsorption of CO. Pb forms two distinct c(2 × 2) phases on Rh(1 0 0), according to the temperature of the substrate. The phase formed below about 570-620 K, denoted α-c(2 × 2), reduces the coverage of adsorbed CO but does not affect the valence band spectrum of the molecule. The phase formed above this temperature, denoted β-c(2 × 2), also reduces the coverage of adsorbed CO but the valence band spectrum of the adsorbed CO is strongly affected. The two phases are also characterised by a slightly different binding energy of the Pb 5d_5/2 level, 17.54 eV for the α phase and 17.70 for the β phase. The Pb/Rh(1 1 0) surface shows two ordered Pb induced phases, c(2 × 2) and p(3 × 1). CO adsorbs on the first with reduced heat of adsorption and with a valence band spectrum that is strongly altered with respect to CO adsorbed on clean Rh(1 1 0), but does not adsorb on the p(3 × 1) structure at 300 K. We compare the present results with previous results from related systems.     

CO adsorption on Au(3 1 0) and Au(3 2 1): 6-Fold coordinated gold atoms

The adsorption of CO on Au(3 1 0) and Au(3 2 1) was studied using a combination of thermal desorption spectroscopy and high resolution core level photoemission spectroscopy. These vicinal Au surfaces both have 6-fold coordinated atoms at the step edges but have a different terrace structure. The CO adsorption behavior was found to be very similar for both surfaces. Three different desorption peaks due to chemisorbed CO were identified, which desorb around 100 K(α), 120 K(β) and 180 K(γ), respectively. The C1s and O1s spectra of the chemisorbed CO show a complex shake-up structure. Our experimental results indicate that CO only adsorbs on the step atoms. The different desorption peaks are explained by substrate-mediated long-range interactions between the adsorbates. Comparison with literature results shows that the CO adsorption energy is not only dependent on the coordination number of the Au atoms, but that the exact geometrical structure of the surface also plays a role.     

Vanadium oxide nanostructures on Rh(1 1 1): Promotion effect of CO adsorption and oxidation

The adsorption of CO and the reaction of CO with pre-adsorbed oxygen at room temperature has been studied on the (2 × 1)ORh(1 1 1) surface and on vanadium oxideRh(1 1 1) “inverse model catalyst” surfaces using scanning tunnelling microscopy (STM) and core-level photoemission with synchrotron radiation. Two types of structurally well-defined model catalyst V₃O₉Rh(1 1 1) surfaces have been prepared, which consist of large (mean size of 50 nm, type I model catalyst) and small (mean size <15 nm, type II model catalyst) two-dimensional oxide islands and bare Rh areas in between; the latter are covered by chemisorbed oxygen. Adsorption of CO on the oxygen pre-covered (2 × 1)ORh(1 1 1) surface leads to fast CO uptake in on-top sites and to the removal of half (0.25 ML) of the initial oxygen coverage by an oxidation clean-off reaction and as a result to the formation of a coadsorbed (2 × 2)O + CO phase. Further removal of the adsorbed O with CO is kinetically hindered at room temperature. A similar kinetic behaviour has been found also for the CO adsorption and oxidation reaction on the type I “inverse model catalyst” surface. In contrast, on the type II inverse catalyst surface, containing small V-oxide islands, the rate of removal of the chemisorbed oxygen is significantly enhanced. In addition, a reduction of the V-oxide islands at their perimeter by CO has been observed, which is suggested to be the reason for the promotion of the CO oxidation reaction near the metal-oxide phase boundary.     

Coadsorption of methyl radicals and oxygen on Rh(1 1 1)

The chemisorption of CH₃ on Rh(1 1 1) is studied to understand the origin of the weakened symmetric stretch mode. A few different explanations for this weakened mode have been suggested in previous studies. These include C-H bond depletion and donation into C-H anti-bond orbitals either in an upright or tilted geometry. We investigate these possibilities by performing first-principles density functional calculations. Our results show strong adsorption at all high-symmetry sites with methyl in two possible orientations. A thorough analysis of the adsorption geometry shows that C_3v symmetry is preferred over a tilted species, ruling out tilting as a mechanism for C-H mode softening. Evidence of a multi-center bond between methyl and the surface rhodium atoms (similar to the kind shown recently by Michaelides and Hu for methyl on Ni(1 1 1)) is presented, showing that C-H bond depletion is the cause of mode-softening for methyl on Rh(1 1 1). Experimental results have shown that mode-softening diminishes when an electronegative species is coadsorbed, suggesting that donation into C-H anti-bonding orbitals is the mechanism for mode-softening. We therefore examine the coadsorption of oxygen and methyl on Rh(1 1 1). Our results suggest a new model for the effect of O on CH₃. Analysis of charge density differences shows that the dominant initial effects of O coadsorption are the removal of charge from the C-surface bond and the transfer of charge to the C-H bond. Subsequent increase of the H-Rh distance further reduces mode softening.     

Growth of Ce on Rh(1 1 1)

We have studied the growth of cerium films on Rh(1 1 1) using STM (scanning tunneling microscopy), LEED (low energy electron diffraction), XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy). Measurements of the Ce films after room temperature deposition showed that Ce is initially forming nanoclusters in the low coverage regime. These clusters consist of 12 Ce atoms and have the shape of pinwheels. At a coverage of 0.25 ML (monolayer, ML) an adatom layer with a (2 × 2) superstructure is observed. Above 0.4 ML, Rh is diffusing through pinholes into the film, forming an unstructured mixed layer. Annealing at 250 °C leads to the formation of ordered Ce-Rh compounds based on the bulk compound CeRh₃. At a coverage of 0.1 ML, small ordered (2 × 2) surface alloy domains are observed. The exchanged Rh atoms form additional alloy islands situated on the pure Rh(1 1 1) surface, showing the same (2 × 2) superstructure as the surface alloy. At a coverage of 0.25 ML, the surface is completely covered by the surface alloy and alloy islands. The (2 × 2) structure is equivalent to a (1 1 1)-plane of CeRh₃, contracted by 6%. Annealing a 1 ML thick Ce layer leads to a flat surface consisting of different rotational domains of CeRh₃(1 0 0). The Rh needed for alloy formation comes from 50 Å deep pits in the substrate. Finally we show that LEIS (low energy ion scattering) is not suitable for the characterization of Ce and CeRh films due to strong effects of neutralization.     

Oxygen induced facet formation on Rh(2 1 0) surface

Oxygen induced nanometer-scale faceting of the atomically rough Rh(2 1 0) surface has been studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). The Rh(2 1 0) surface completely covered with nanometer-scale facets when annealed at ≥550 K in the presence of oxygen. LEED studies reveal that the pyramidal faceted surface is characterized by three-sided nanoscale pyramids exposing (7 3 1), (7 3 −1) and (1 1 0) faces. A clean faceted surface was prepared through the use of low temperature surface cleaning method using the reaction with H₂ while preserving (“freezing”) the pyramidal facet structure. The resulting clean faceted surface remains stable for T ∼ 600 K and for higher temperatures; the faceted surface irreversibly relaxes to the planar surface. STM measurements confirms the formation of nanopyramids with average pyramid size ranging from 12 to 21 nm depending upon the annealing temperature. The nanopyramidal faceted Rh surface may be used as a potential template for the growth of metallic nanoclusters and for structure sensitive reactions.     

Molecularly intact and dissociative adsorption of water on clean Cu(1 1 0): A comparison with the water/Ru(0 0 1) system

An X-ray photoelectron spectroscopy (XPS) study was undertaken of the water/Cu(1 1 0)-system finding non-dissociative adsorption on clean Cu(1 1 0) at temperatures below 150 K. Thermally induced dissociation of D₂O is observed to occur above 150 K, similar to the H₂O/Ru(0 0 1) system, with an experimentally derived activation barrier of 0.53-0.56 eV which is very close in magnitude to the derived activation barrier for desorption of 0.50-0.53 eV. X-ray and electron induced damage to the water overlayer was quantified and used to rationalize the results of a recent XPS study of the water/Cu(1 1 0)-system where partial dissociation was observed already at 90 K.     

Adsorption behavior and reaction properties of NO and CO on Rh(1 1 1)

Reactions between NO and CO on Rh(1 1 1) surfaces were investigated using infrared reflection absorption spectroscopy, X-ray photoelectron spectroscopy, and temperature-programmed desorption. NO adsorbed on the fcc, atop, and hcp sites in that order, whereas CO adsorbed initially on the atop sites and then on the hollow (fcc + hcp) sites. The results of experiments with NO exposure on CO-preadsorbed Rh(1 1 1) surfaces indicated that the adsorption of NO on the hcp sites was inhibited by preadsorption of CO on the atop sites, and NO adsorption on the atop and fcc sites was inhibited by CO preadsorbed on each type of site, which indicates that NO and CO competitively adsorbed on Rh(1 1 1). From a Rh(1 1 1) surface with coadsorbed NO and CO, N₂ was produced from the dissociation of fcc-NO, and CO₂ was formed by the reaction of adsorbed CO with atomic oxygen from dissociated fcc-NO. The CO₂ production increased remarkably in the presence of hollow-CO. Coverage of fcc-NO and hollow-CO on Rh(1 1 1) depended on the composition ratio of the NO/CO gas mixture, and a gas mixture with NO/CO ? 1/2 was required for the co-existence of fcc-NO and hollow-CO at 273 K.     

The dissimilar twins - a comparative, site-selective in situ study of CO adsorption and desorption on Pt(3 2 2) and Pt(3 5 5)

The adsorption and desorption of CO on stepped Pt(3 2 2) = Pt(S)-[5(1 1 1) × (1 0 0)] and Pt(3 5 5) = Pt(S)-[5(1 1 1) × (1 1 1)] were investigated using in situ high-resolution X-ray photoelectron spectroscopy at BESSY II, which allows to clearly distinguish between different step and terrace adsorption sites. For the two surfaces, with the same nominal terrace width of five atomic rows, but different step orientation, significant differences are observed. While for Pt(3 5 5) CO adsorption at steps only occurs at on-top sites, on Pt(3 2 2) both step on-top and bridge sites are occupied, albeit with a significantly lower coverage (0.07 vs. 0.13 ML at 200 K). On both surfaces terrace sites are only occupied when the step sites are almost saturated confirming the enhanced binding energy at step sites. CO adsorbed at the (1 1 1) steps on Pt(3 5 5) is more strongly bound than on the (1 0 0) steps on Pt(3 2 2), which is attributed to the different electronic and geometric structure of the steps. The relative occupation of terrace and step sites at a given coverage remains the same between 120 and 290 K on Pt(3 5 5) K, but shows major changes on Pt(3 2 2), between step on-top and bridge sites as well as terrace on-top and bridge sites. On Pt(3 5 5) a smaller CO terrace coverage is found (0.36 vs. 0.40 ML on Pt(3 2 2) at 200 K), mainly due to the lower occupation of terrace bridge sites. For Pt(3 2 2), an ordered adsorbate phase is deduced from a c(4 × 2)-like LEED pattern, which indicates adsorbate order beyond the extension of a single terrace. A model for this structure is proposed.     

Epitaxial growth of Al on Si(1 1 1) with Cu buffer layers

The structure of thin Al films grown on Si(1 1 1) with thin Cu buffer layers has been investigated using synchrotron radiation photoemission spectroscopy. A thin Cu(1 1 1) layer between the Si(1 1 1) substrate and an Al film may enhance quantum well effects in the Al film significantly. The strength of quantum well effects has been investigated qualitatively with respect to the thickness of the Cu buffer layer and to the Al film thickness. Deposition of Cu on Si(1 1 1)7 × 7 leads to formation of a disordered silicide layer in an initial regime before a well-ordered Cu(1 1 1) film is formed after deposition of the equivalent of 6 layers of Cu. In the regime below 6 layers of Cu the disorder is transferred to Al layers subsequently grown on top. The initial growth of up to 8 layers of Al on a well-ordered Si/Cu(1 1 1) layer leads to a disordered film due to the lattice mismatch between the two metals. When the Cu buffer layer and the Al over-layer are above 6 and 8 layers, respectively the Al film shows sharp low energy electron diffraction patterns and very sharp quantum well peaks in the valence band spectra signalling good epitaxial growth.     

STM observation of surface phases of Sn/Cu(0 0 1)

Geometrical structures of the Sn-adsorbed Cu(0 0 1) surfaces are studied with scanning tunneling microscopy. There are four phases in the Sn coverage range between 0.2 and 0.5 mono-atomic layer (ML). On the basis of the observed atomic images in this range, we propose structural models for the phases with 0.33 and 0.375 ML of Sn. All the phases consist of embedded Sn atoms in the Cu surface, forming two-dimensional surface alloy structures. On the surface with ∼0.4 ML of Sn, a novel one-dimensional structure is observed.     

CO oxidation on Pd(1 1 1), Pt(1 1 1), and Rh(1 1 1) surfaces studied by infrared chemiluminescence spectroscopy

The infrared (IR) chemiluminescence studies of CO₂ formed during steady-state CO oxidation over Pd(1 1 1), Pt(1 1 1), and Rh(1 1 1) surfaces were carried out. Analysis of their emission spectra indicates that the order of the average vibrational temperature () values of CO₂ formed during CO oxidation was as follows: Pd(1 1 1) > Pt(1 1 1) > Rh(1 1 1), and the order is coincident with the potential energy in the transition state expected by the theoretical calculations. Furthermore, it is suggested that the bending vibrational temperature () can also be influenced by the angle of O-C-O (∠_OCO) of the activated complex in the transition state, which has also been proposed by the theoretical calculations.     

Conformational isomers of stilbene on Si(1 0 0)

Stilbene (1,2-diphenylethylene) has shown an intriguing isomerisation behavior and may serve as a model system for “molecular switches” incorporating a CC double bond. To evaluate the possible use of such molecules as molecular switches on semiconductor surfaces, the adsorption of cis- and trans-stilbene on Si(1 0 0) has been investigated. Identification of both isomers is achieved by differences in adsorption geometry as revealed by NEXAFS, and differences in electronic structure in the occupied and unoccupied molecular orbitals. For both isomers, bonding takes place via the CC double bond to the Si dimer atoms allowing for free movement of the aromatic rings, a necessary prerequisite for photoinduced isomerisation on the surface. Our experimental results agree well with theoretical calculations.     

Surface alloy formation after deposition of Ce on Rh(1 1 0)

Vapour deposition of Ce onto a Rh(1 1 0) single crystal at room temperature is studied by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and low energy electron diffraction (LEED). The thicknesses of the deposited Ce layers are estimated to be between 2 and 9 Å. To study the changes in the Ce-Rh surface layer, the samples are annealed at temperatures between 500 and 1000 °C after Ce deposition.After heating, a c(2 × 2) LEED pattern appears for the sample with the thinnest deposited Ce layer (2.4 Å). For samples with thicker Ce-films, the LEED pattern co-exists of a c(2 × 2) structure and a more diffuse 6% contracted (2 × 1) structure. This appears at the same temperature as the Ce 3d and Rh 3d core levels exhibit sharp intensity changes and binding energy shifts.The intensity of the f⁰, f¹ and f² multiplets in the Ce 3d core level spectra change when the annealing temperature is increased. The relative intensity of the Ce 3d f⁰ and f² features compared to the Ce 3d f¹ features is largest after annealing to 500 °C. This is below the temperature at which the ordered surface alloy is formed. When the sample is heated above the formation temperature of the surface alloy, the relative intensity of the Ce 3d f⁰ and f² features decrease.     

Photoemission study of the Li/Ge(1 1 1)-3 × 1 reconstruction

In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)-3 × 1 reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and core-level spectroscopy using synchrotron radiation. The results are compared to the theoretical honeycomb-chain-channel (HCC) model for the 3 × 1 reconstruction as calculated using density functional theory (DFT). ARUPS measurements were performed in both the and directions of the 1 × 1 surface Brillouin zone at photon energies of 17 and 21.2 eV. Three surface related states were observed in the direction. In the direction, at least two surface states were seen. The calculated band structure using the single-domain HCC model for Li/Ge(1 1 1)-3 × 1 was in good agreement with experiment, allowing for the determination of the origin of the experimentally observed surface states. In the Ge 3d core-level spectra, two surface related components were identified, both at lower binding energy with respect to the Ge 3d bulk peak. Our DFT calculations of the surface core-level shifts were found to be in fair agreement with the experimental results. Finally, in contrast to the Li/Si(1 1 1)-3 × 1 case, no double bond between Ge atoms in the top layer was found.     

Theoretical study of CO adsorption on the illuminated TiO2 (0 0 1) surface

A quantum modeling of the CO adsorption on illuminated anatase TiO₂ (0 0 1) is presented. The calculated adsorption energy and geometries of illuminated case are compared with the ground state case. The calculations were achieved by using DFT formalism and the BH and HLYP. Upon photoexcitation, an electron-hole pair is generated. Comparing of natural population in the ground state and the exited state, shows that an electron is trapped in a Ti⁴⁺ ion and a hole is localized in an oxygen ion. The photoelectron helps generation of a CO₂ molecule on the TiO₂ surface. As shown by optimization of these systems, the CO molecule adsorbed vertically on the TiO₂ (0 0 1) surface in the ground state case while the CO molecule made an angle of 134.3° to this surface at the excited state case. Based on the here used model the obtained adsorption energy was 0.36 eV which is in excellent agreement with the reported experimental value. In the present work the C-O stretch IR frequencies are calculated which are 1366.53 and 1423.16 cm⁻¹. These results are in good agreement with the earlier reported works for the surface carbonaceous compounds, and oxygenated carbon species.     

Initial stage of nitridation on Si(1 0 0) surface using low-energy nitrogen ion implantation

The initial stage of the thermal nitridation on Si (1 0 0)-2 × 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 × 1 periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si¹⁺, Si²⁺, and Si³⁺). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si¹⁺, Si²⁺ and Si³⁺ are the interface states.     

Cobaltocene adsorption and dissociation on Cu(1 1 1)

Photoemission results indicate that the initial adsorption of cobaltocene on Cu(1 1 1) at 150 K leads to molecular fragmentation, but with subsequent cobaltocene exposures, molecular absorption occurs. The molecularly adsorbed species is either adsorbed with only a fraction of molecules adopting a preferential orientation along the surface normal or adsorbed with the molecular axis away from the surface normal. This adsorption behavior is compared to nickelocene and ferrocene adsorption.     

Theoretical study of CO and Pb adsorption on the Ni(1 1 1) and Ni3Al(1 1 1) surfaces

Adsorption of CO molecules and Pb atoms on the Ni(1 1 1) and Ni₃Al(1 1 1) substrates is studied theoretically within an ab initio density-functional-theory approach. Stable adsorption sites and the corresponding adsorption energies are first determined for stoichiometric surfaces. The three-fold hollow sites (fcc for Pb and hcp for CO) are found most favourable on both substrates. Next, the effect of surface alloying by a substitution of selected topmost substrate atoms by Pb or Ni atoms on the adsorption characteristics is investigated. When the surface Al atoms of the Ni₃Al(1 1 1) substrate are replaced by Ni atoms, the Pb and CO adsorption energies approach those for a pure Ni(1 1 1) substrate. The Pb alloying has a more substantial effect. On the Ni₃Al(1 1 1) substrate, it reduces considerably adsorption energy of CO. On the Ni(1 1 1) substrate, CO binding strengthens slightly upon the formation of the Ni(1 1 1)p(2×2)-Pb surface alloy, whereas it weakens drastically when the Ni(1 1 1)-Pb surface alloy is formed.