Local field-emission characteristic of individual AlN cone fabricated by focused ion-beam etching method

Highly (0 0 2)-oriented AlN film was deposited on n-type (1 0 0)-oriented silicon substrates by the radio frequency magnetron sputtering method. An individual AlN cone with high aspect ratio was fabricated by the focused ion-beam (FIB) etching process in the surface of an as-formed AlN film. This etching method can easily control the tip radius and height to obtain AlN cones with different aspect ratios. The field-emission property of the individual AlN cone was measured in a scanning electron microscopy system equipped with a movable probe as the anode above the AlN tip. The results indicated that the as-formed single AlN cone with high aspect ratio possessed good field-emission ability although it only had a tiny emission area. Compared with a single Si tip fabricated by the same method, a single AlN cone exhibits better field-emission ability, and hence, has great potential as a promising candidate of point electron source for application in vacuum electronic devices.     

Fabrication and characterization of Mg-doped pencil-shaped ZnO microprisms

Two types of novel Mg-doped pencil-shaped ZnO microprisms had been successfully synthesized on Mg(NO₃)₂-coated Si (1 1 1) substrates by thermal chemical vapor deposition method. The as-prepared ZnO prisms were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), selected area electron diffraction (SAED), and photoluminescence (PL) spectroscopy. The straight microprisms are made up of hexagonal pyramids tips and hexagonal prisms bodies. Both of the structures are perfect single crystal and have grown along the [0 0 0 1] direction preferentially. Photoluminescence reveals a red-shift at around 387 nm which is induced by Mg doping and a green light emission peak at around 511 nm. The pencil-shaped ZnO microstructure can provide an improvement in novel ultraviolet light-emitting devices. In addition, the growth mechanism of the special ZnO microprisms is discussed briefly.     

Growth of thin Fe(0 0 1) films for terahertz emission experiments

The electrical and magnetic properties of thin iron (Fe) films have sparked significant scientific interest. Our interest, however, is in the fundamental interactions between light and matter. We have discovered a novel application for thin Fe films. These films are sources of terahertz (THz) radiation when stimulated by an incident laser pulse. After intense femtosecond pulse excitation by a Ti:sapphire laser, these films emit picosecond, broadband THz frequencies. The terahertz emission provides a direct measure of the induced ultrafast change in magnetization within the Fe film. The THz generation experiments and the growth of appropriate thin Fe films for these experiments are discussed. Several criteria are used to select the substrate and film growth conditions, including that the substrate must permit the epitaxial growth of a continuous, monocrystalline or single crystal film, yet must also be transparent to the emitted THz radiation. An Fe(0 0 1) film grown on the (0 0 1) surface of a magnesium oxide (MgO) substrate makes an ideal sample. The Fe films are grown by physical vapor deposition (PVD) in an ultrahigh vacuum (UHV) system. Low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) are used to characterize the Fe(0 0 1) films. Two substrate surface preparation methods are investigated. Fe(0 0 1) films grown on MgO(0 0 1) substrates that are used as-received and films grown on MgO(0 0 1) substrates that have been UV/ozone-cleaned ex vacuo and annealed in vacuo produce the same results in the THz generation experiments. Either substrate preparation method permits the growth of samples suitable for the THz emission experiments.     

Structural,optical and magnetic study of (1−x)ZnO–xMgO composites prepared through solid state reaction method

We report the study of structural, optical and magnetic properties of (1−x)ZnO–xMgO (x=0.35, 0.40, 0.45 and 0.50) composites prepared by solid state reaction method. X-ray diffraction pattern confirms the presence of both the phases associated with ZnO (hexagonal) and MgO (cubic), which is revealed through the existence of (1 1 1) and (2 0 0) peaks in addition to ZnO peaks. The lattice parameter c as calculated using X-ray analysis undergoes shrinkage with increasing content of MgO. Microstructural analysis suggests that there is no variation in spherical elongated shape of grains with increasing concentration of MgO, where the average grain size is found to be ∼600 nm. The band gap as calculated from optical absorption spectra obtained by diffuse reflectance method recorded at room temperature is tuned from 3.16 to 3.55 eV. Photoluminescence spectra consist of near band edge UV emission (389 nm) and defect level emission (503 nm). The increase of MgO concentration leads to blue shift of UV emission peaks. The magnetic measurements conducted using SQUID at 5 K temperature reveals ferromagnetism along with paramagnetic and superparamagnetic components. Saturation magnetisation (M_s) is observed to be enhanced with MgO doping.     

The enhanced field-emission properties of screen-printed single-wall carbon-nanotube film by electrostatic field

In this work, we improved the field-emission properties of a screen-printed single-wall carbon-nanotube (SWCNT) film by applying a strong electrostatic field during the drying process after the printing. By applying the strong field, more tips of SWCNTs could emerge from the screen-printed film and turn somewhat toward the erecting direction because of the repulsive force among the SWCNTs. The field-emission properties of the film were thus improved obviously. The improved field emitters sample has low electron emission turn-on field (E_to = 1.22 V/μm), low electron emission threshold field (E_th = 2.32 V/μm) and high brightness with good uniformity and stability. The lowest operating field of the improved sample is below 1.0 V/μm and its optimum current density exceeds 3.5 mA/cm².     

Secondary electron yield enhancement by MgO capping layers

The yield of secondary electrons emitted from an epitaxial three monolayer (3 ML) NiO(1 0 0)/Ag(1 0 0) film excited by soft X-ray linearly polarized synchrotron radiation at the Ni L_2,3 absorption threshold has been measured for different values of the thickness of a MgO(1 0 0) capping layer. Compared with the as grown 3 ML NiO(1 0 0)/Ag(1 0 0) film, we observe a significant enhancement by about a factor 1.2 of the secondary electron emission for the capped 8 ML MgO(1 0 0)/3 ML NiO(1 0 0)/Ag(1 0 0) sample. A further substantial yield enhancement by a factor 1.6 with respect to the uncapped NiO sample is observed after deposition of an additional 8 ML MgO(1 0 0) film, for a total capping layer thickness of 16 ML. The observed secondary electron yield enhancement is discussed in terms of modified electronic structure, surface work function changes, and characteristic electron propagation lengths.     

Synthesis and field-emission of aligned SnO2 nanotubes arrays

Aligned tin dioxide (SnO₂) nanotubes have been synthesized by high-frequency inductive heating. Nanotubes with high yield were grown on silicon substrates in less than 5 min, using SnO₂ and graphite as the source powder. Scanning electron microscopy and transmission electron microscopy showed nanotube with diameters from 50 to 100 nm and lengths up to tens of mircrometers. The SnO₂ nanotubes synthesized under the optimum condition have better field-emission characteristics. The turn-on field needed to produce a current density of 10 μA/cm² is found to be 1.64 V/μm. The samples show good field-emission properties with a fairly stable emission current. This type of SnO₂ nanotubes can be applied as field emitters in displays as well as vacuum electric devices.     

Influence of growth time on field emission properties from carbon nanotubes deposited on arrayed nanoporous silicon pillars

We investigated the influence of growth time on field emission properties of multi-walled carbon nanotubes deposited on silicon nanoporous pillar array (MWCNTs/Si-NPA), which were fabricated by thermal chemical vapour deposition at 800 °C for 5, 15 and 25 min respectively, to better understand the origins of good field emission properties. The results showed that the MWCNTs/Si-NPA grown for 15 min had the highest field emission efficiency of the three types of samples. Morphologies of the products were examined by field-emission scanning electron microscope, and the excellent field emission performance was attributed not only to the formation of a nest array of multi-walled carbon nanotubes, which would largely reduce the electrostatic shielding among the emitters and resulted in a great enhancement factor, but also to the medium MWCNTs density films, there was an ideal compromise between the emitter density and the intertube distance, which also could effectively avoid electrostatic shielding effects, along with a high emitter density.     

Emission characteristics, crystalline phase and composition of vapor-transport-equilibrated Er:LiNbO3 crystal codoped with 6 mol% MgO

Polarized downconversion, 980-nm-upconversion and near-infrared emission characteristics of vapor-transport-equilibrated (VTEed) bulk Er (0.4 mol%)/MgO (6 mol%)-codoped LiNbO₃ crystals were investigated. The downconversion and upconversion visible emissions display similar VTE effects including the drop of emission intensity and the weakening of polarization dependence. At 0.98 and 1.5 μm regions, the VTE has a weak effect on the emission intensity, but a strong effect on the spectral shape. The crystalline phases in these bulk Er/Mg-codoped VTE crystals are determined by comparing their infrared emission characteristics with those of pure ErNbO₄ powder and locally Er-doped MgO (4.5 mol%):LiNbO₃ crystal. The results show that the Er³⁺ ions present in these bulk Er/Mg-codoped VTE crystals as a mixture of Er:LiNbO₃ and ErNbO₄ phases. The percentages of the ErNbO₄ phase contained in these VTE crystals were evaluated from the 1531 and 1536 nm characteristic absorption areas. The contents of constituent elements were determined by chemical analysis.     

Growth and morphology of the epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) Trilayers

Growth and surface morphology of epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(1 1 0) resulting in dense MgO(1 1 1) films at room temperature as well as at 250 °C. As observed by STM, initial deposition of MgO leads to a partial oxidation of the Fe(1 1 0) surface which is confirmed by Auger electron spectroscopy. The top Fe layer deposited on MgO(1 1 1) at room temperature is relatively rough consisting of clusters which can be transformed by annealing to an atomically flat epitaxial Fe(1 1 0) film.     

Effect of MgO on the enhancement of ultraviolet photoluminescence in ZnO

By glycine-nitrate combustion route and followed by 900 °C annealing in air, ZnO-MgO nanocomposite with heterojunction-like structures between ZnO and MgO phase was successfully produced. The ultraviolet photoluminescence band from ZnO is enhanced by the incorporation of MgO, as compared to the pure ZnO synthesized via the similar route. The charge transfer required by electronic equilibrium across the junction creates an electron depletion region in ZnO phase, which greatly changes the electron states of visible emission-related defects, as a result, the band-edge emission is enhanced while the visible emission in ZnO is suppressed. This mechanism may provide an effective way to modify the emission property of nanomaterials.     

Fabrication of MgO barrier for a magnetic tunnel junction in as-deposited state using amorphous RE–TM alloy

MgO (1 0 0) textured films on Fe buffer layer with (1 0 0) preferential orientation were prepared by a reactive facing targets sputtering system at a substrate temperature of 100 °C during MgO deposition. This process can allow fabrication of MgO (1 0 0) tunneling barrier layer without high-temperature annealing process after the sputter-deposition. In addition, FeCo (1 0 0) preferred orientation films prepared on GdFeCo layers were improved with GdFeCo thickness. MgO films deposited on Fe (or FeCo) buffer layers revealed apparent (1 0 0) preferred orientation at the early stage of the film growth. 3 nm-thick MgO films deposited on GdFeCo [100 nm]/Fe [3 nm] exhibited (1 0 0) texture. Magnetic characteristic of perpendicular-magnetic tunnel junction (P-MTJ) element with the structure of GdFeCo [100 nm]/Fe [3 nm]/MgO [3 nm]/Fe [3 nm]/TbFeCo [100 nm] exhibited high squareness ratio of 0.8 and coercivity of free layer as low as 117 Oe by anomalous Hall effect, and (1 0 0) preferred orientation of 3 nm-thick MgO layer was observed by an X-ray diffractometer.     

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

We report the fabrication and electrical characteristics of thin film transistors based on MgZnO thin films with different thicknesses of MgO buffer layer. The MgZnO thin films with MgO buffer layers were grown on SiO₂/p-Si substrates by plasma assisted molecular beam epitaxy. The effects of the buffer layer thickness on the structural properties of MgZnO films are investigated by X-ray diffraction, and the results show that the crystal quality of the MgZnO film is enhanced with 4 nm MgO buffer layer. The MgZnO TFT with 4 nm MgO buffer layer exhibits an n-type enhancement mode characteristics with a field effect mobility of 1.85 cm²/V s, a threshold voltage of 27.6 V and an on/off ratio of above 10⁶.     

Structure of MgO/V/MgO(0 0 1) thin films studied by the combination of X-ray photoemission and ion beam analysis techniques

The structure of epitaxial 40 Å thick V(0 0 1) films grown at room and high temperature (723 K) in MgO/V/MgO(0 0 1) model heterostructures is studied in detail by means of X-ray photoemission spectroscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The resulting structures of samples grown at both temperatures is very similar, including the eventual contamination by hydrogen in the V layer, and only subtle modifications at the V/MgO(0 0 1) interface have been observed. These differences at the very first V layers grown on MgO(0 0 1) surface could infer in the growth of the subsequent V layers. The influence of the nature of the V oxides at the V/MgO(0 0 1) interface on the properties of the 40 Å thick V(0 0 1) films is discussed.     

Stability of MgO(1 1 1) films grown on 6H-SiC(0 0 0 1) by molecular beam epitaxy for two-step integration of functional oxides

Crystalline magnesium oxide (MgO) (1 1 1), 20 Å thick, was grown by molecular beam epitaxy (MBE) on hydrogen cleaned hexagonal silicon carbide (6H-SiC). The films were further heated to 740 °C and 650 °C under different oxygen environments in order to simulate processing conditions for subsequent functional oxide growth. The purpose of this study was to determine the effectiveness and stability of crystalline MgO films and the MgO/6H-SiC interface for subsequent heteroepitaxial deposition of multi-component, functional oxides by MBE or pulsed laser deposition processes. The stability of the MgO films and the MgO/6H-SiC interface was found to be dependent on substrate temperature and the presence of atomic oxygen. The MgO films and the MgO/6H-SiC interface are stable at temperatures up to 740 °C at 1.0 × 10⁻⁹ Torr for extended periods of time. While at temperatures below 400 °C exposure to the presence of active oxygen for extended periods of time has negligible impact, exposure to the presence of active oxygen for more than 5 min at 650 °C will degrade the MgO/6H-SiC interface. Concurrent etching and interface breakdown mechanisms are hypothesized to explain the observed effects. Further, barium titanate was deposited by MBE on bare 6H-SiC(0 0 0 1) and MgO(1 1 1)/6H-SiC(0 0 0 1) in order to evaluate the effectiveness of the MgO as a heteroepitaxial template layer for perovskite ferroelectrics.     

Densities of states of low-index surfaces of tantalum by photofield emission

The total energy distributions (TED) of the true photofield emission current from clean (1 0 0), (1 1 0) and (1 1 1) facets of Ta field emitters have been measured using a new method to remove the thermocurrent associated with laser heating. Each TED exhibits one or more prominent peaks that are interpreted by comparing them with ab initio calculations of the TED of the emission current based on density functional theory. The generally good agreement with experiment indicates that the same method can be used for accurate calculations of the densities of states of low-index surfaces of Ta. Each of the experimental TEDs shows, in addition to the prominent peaks, a set of weaker peaks that are not predicted by the calculation and whose spacing depends on the sharpness of the field emitter. These weaker peaks are interpreted as arising from size-effect resonances in the microcrystal at the apex of the field emitter.     

Fe–Pt–MgO stacked films for perpendicular magnetic recording

Fe–Pt–MgO stacked storage layer constructed by [Fe–Pt/Fe–Pt–MgO/Fe–Pt] trilayered structure was proposed for a next-generation high-density perpendicular magnetic recording medium. The Fe–Pt–MgO composite middle layer was prepared by sputtering the Fe–Pt–MgO composite-type target including relatively large MgO content of 50 vol%. The Fe–Pt(0 0 1) seed layer deposited on MgO underlayer was effective in forming the ordered fct(0 0 1) phase for the Fe–Pt–MgO composite film. The reduction of transition jitter noise and the suppression of signal overlap were observed in the stacked-type medium with the Fe–Pt–MgO middle layer of 1 nm thickness. The improvement of recording properties is attributed to the pinning effect of magnetic domain wall by the Fe–Pt–MgO composite layer inserted into the middle of pure Fe–Pt storage layer.     

Effect of microstructure of MgO buffer layer on BaTiO3 grown on silicon substrates

MgO ultrathin films were grown on Si(1 0 0) substrates as buffer layers for the growth of ferroelectric BaTiO₃ thin films by laser molecular beam epitaxy (L-MBE). The deposition process of MgO buffer layers grown on silicon was in situ monitored by reflection high-energy electron diffraction (RHEED). The structure of BaTiO₃ films fabricated on MgO buffers was investigated by X-ray diffraction. Biaxially textured MgO was obtained at high laser energy density, but when the laser energy was lowered, MgO buffer was transformed to the form of texture with angular dispersion with the increase of the film thickness. BaTiO₃ films grown on the former buffer were completely (0 0 1) textured, while those on the latter were (0 0 1) preferred orientated. Furthermore, the fabricated MgO buffers and BaTiO₃ films had atomically smooth surface and interface. All these can reveal that the quality of textured MgO buffer is a key factor for the growth of BaTiO₃ films on silicon.     

Preparation and structural properties of MgO films grown on GaAs substrate

Epitaxial MgO thin films have been grown on semiinsulating GaAs (0 0 1) substrates using electron beam (e-beam) evaporation. X-ray diffraction indicates c-axis oriented MgO with (0 0 2) reflection only and rocking curve widths ∼2.2-3°. Transmission electron microscopy (TEM) analyses confirm an epitaxial growth of the MgO films. We study the microstructure and the defects at the interface between the MgO film and the GaAs substrate. Auger electron Spectroscopy (AES) concentration depth profiles reveal no contamination of the MgO films by As and Ga at different temperatures of the deposition process.     

Plasmon resonance modulated photoluminescence and Raman spectroscopy of diindenoperylene organic semiconductor thin film

In a comparison between a bare diindenoperylene (DIP) film and a DIP film spin-coated with a layer of gold nanoparticles, we have investigated the influence of plasmon resonances in the gold particles on spectroscopic properties of the molecular film. Under off-resonant excitation with a laser at 633 nm, the bare DIP film showed only weak photoluminescence (PL) and Raman signals, but after spin-coating gold nanoparticles on such a DIP film, we found an enhancement of both the PL and Raman signals by a factor of about 3, whereas no enhancement could be observed when the same sample was excited with laser light of 488 nm. This difference reveals that at 633 nm, plasmon resonances in the gold nanoparticles are excited, leading in turn to an enhancement of PL and Raman signals of the weakly absorbing DIP film via coupling between plasmons in the gold particles and exciton-polaritons in the molecular film. For the laser at 488 nm, due to a much larger absorption coefficient of DIP, excitons in the molecular film are directly excited, out-weighing the influence of an off-resonant coupling to the plasmon resonances in the gold particles occurring at much lower energy.