In situ scanning tunneling microscopy studies of bimetallic cluster growth: Pt-Rh on TiO2(1 1 0)

The growth of Pt on clusters on TiO₂(1 1 0) in the presence and absence of Rh was investigated by scanning tunneling microscopy (STM) for Pt deposited on top of 0.3 ML Rh clusters (Rh + Pt). In situ STM studies of Pt growth at room temperature show that bimetallic clusters are produced when Pt is directly incorporated into existing Rh clusters or when newly nucleated clusters of pure Pt coalesce with existing Rh clusters. Low energy ion scattering experiments demonstrate that Rh is still present at the surface of the clusters even after deposition of 2 ML of Pt, indicating that Rh atoms can diffuse to the cluster surface at room temperature. Rh clusters were found to seed the growth of Pt clusters at room temperature as well as 100 K and 450 K. Furthermore, clusters as large as 100 atoms were observed to be mobile on the surface at room temperature and 450 K, but not at 100 K. Pt deposition at 100 K exhibited more two-dimensional cluster growth and higher cluster densities compared to room temperature experiments due to the lower diffusion rate. Increased diffusion rates at 450 K resulted in more three-dimensional cluster growth and lower densities for pure Pt growth, but cluster densities for Pt + Rh growth were the same as at room temperature.     

Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.     

Bimodal growth of manganese silicide on Si(1 0 0)

Two different growth modes of manganese silicide are observed on Si(1 0 0) with scanning tunneling microscopy. 1.0 and 1.5 monolayer Mn are deposited at room temperature on the Si(1 0 0)-(2 × 1) substrate. The as-grown Mn film is unstructured. Annealing temperatures between room temperature and 450 °C lead to small unstructured clusters of Mn or Mn_xSi_y. Upon annealing at 450 °C and 480 °C, Mn reacts chemically with the Si substrate and forms silicide islands. The dimer rows of the substrate become visible again. Two distinct island shapes are found and identified as MnSi and Mn₅Si₃.     

Growth morphology of ultra-thin Ni films on Pd(1 0 0)

A series of thin Ni films, with thicknesses between 0.2 ML to 13 ML, were deposited on a Pd(1 0 0) substrate (a = 3.89 Å) at room temperature (RT). The growth morphology was investigated using scanning tunneling microscopy (STM). STM images indicate the existence of three different growth modes as a function of increasing coverage. Up to 6.5 ML, the films grow pseudomorphically, consistent with a face-centered tetragonal (fct) structure. From 6.5 ML to 10.5 ML a new apparent interlayer distance of 1.0 ± 0.1 Å is established. The new structure is accompanied by the appearance of an arrangement of filaments on the top layer surface. These filaments are presumably related to a strain relief mechanism of the fct films. Finally above 10.5 ML the Ni films recover the face-centered cubic (fcc) lattice constants. The filaments evolve, as a function of coverage, to form a net-like structure over the whole surface.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.     

Growth of Ce on Rh(1 1 1)

We have studied the growth of cerium films on Rh(1 1 1) using STM (scanning tunneling microscopy), LEED (low energy electron diffraction), XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy). Measurements of the Ce films after room temperature deposition showed that Ce is initially forming nanoclusters in the low coverage regime. These clusters consist of 12 Ce atoms and have the shape of pinwheels. At a coverage of 0.25 ML (monolayer, ML) an adatom layer with a (2 × 2) superstructure is observed. Above 0.4 ML, Rh is diffusing through pinholes into the film, forming an unstructured mixed layer. Annealing at 250 °C leads to the formation of ordered Ce-Rh compounds based on the bulk compound CeRh₃. At a coverage of 0.1 ML, small ordered (2 × 2) surface alloy domains are observed. The exchanged Rh atoms form additional alloy islands situated on the pure Rh(1 1 1) surface, showing the same (2 × 2) superstructure as the surface alloy. At a coverage of 0.25 ML, the surface is completely covered by the surface alloy and alloy islands. The (2 × 2) structure is equivalent to a (1 1 1)-plane of CeRh₃, contracted by 6%. Annealing a 1 ML thick Ce layer leads to a flat surface consisting of different rotational domains of CeRh₃(1 0 0). The Rh needed for alloy formation comes from 50 Å deep pits in the substrate. Finally we show that LEIS (low energy ion scattering) is not suitable for the characterization of Ce and CeRh films due to strong effects of neutralization.     

Morphology of Ni ultrathin films on Mo(1 1 0) and W(1 0 0) studied by LEED and STM

The morphology of ultrathin Ni films on Mo(1 1 0) and W(1 0 0) has been studied by low-energy electron diffraction and scanning tunneling microscopy. Ni films grow pseudomorphically on Mo(1 1 0) at 300 K for a coverage of 0.15 ML. A (8 × 1) structure is found at 0.4 ML, which develops into a (7 × 1) structure by 0.8 ML. The film undergoes a structural change to fcc Ni(1 1 1) at 6 ML. The growth mode switches from layer-by-layer to Stranski-Krastanov between 4 ML and 6 ML. Annealing at around 850 K results in alloying of submonolayer films with the substrate, while for higher coverages the Ni agglomerates into nanowedge islands. Ni films grow pseudomorphically on W(1 0 0) up to a coverage of around 2 ML at 300 K, above which there is a structural change from bcc to hcp Ni with the epitaxial relationship . This is accompanied by the formation of orthogonal domains of uniaxial strain-relieving dislocations from the third layer of the film. For coverages up to 1 ML the growth proceeds by formation of two-dimensional islands, but shifts to three-dimensional growth by 2 ML with rectangular islands aligned along the 〈0 1 1〉 substrate directions. Annealing at around 550 K results in agglomeration of Ni into larger islands and increasing film roughness.     

Scanning tunneling microscopy and abinitio studies of precursor states of Ga-induced cluster on Si(0 0 1) surface

The growth processes and structures of Ga layers formed on a Si(0 0 1) surface have been studied by scanning tunneling microscopy (STM) and abinitio calculation. The precursor states of the Ga clusters that compose the Si(0 0 1) 8 × n-Ga (n = 4, 5, 6) structures are observed in addition to the 2 × 2- and 4 × 2-Ga structures at a Ga coverage of 0.55 ML at 300 °C. There are two types of precursor clusters whose protrusions are observed as different shapes in filled-state STM images. We compare the observed STM images with the simulated ones to identify the possible structural models. From the results, we determine the structure of each precursor cluster. On the basis of the results, the formation processes of the cluster are discussed.     

Vanadium nanoclusters on Si(1 1 1) 7 × 7 surface studied by scanning tunneling microscopy

The size distribution and shape transition of self-assembled vanadium silicide clusters on Si(1 1 1) 7 × 7 have been investigated by scanning tunneling microscopy. Nanoclusters were formed by submonolayer vanadium deposition at room temperature followed by subsequent annealing (solid phase epitaxy - SPE). At room temperature, initially V-nanoclusters are formed which occupy sites avoiding the corner hole parts of the unit cells in the Si(1 1 1) 7 × 7 surface. Upon annealing, strong metal-silicon reaction occur leading to the formation of vanadium silicide nanoclusters. As a function of temperature, both, flat (2D) and three dimensional (3D) clusters have been obtained. After annealing at temperatures around 900 K many faceted clusters are created, whereas at higher annealing temperature, around 1300 K, predominantly 3D clusters are formed. The size distribution of SPE grown clusters could be well controlled in the range of 3-10 nm. The cluster size depends on the annealing temperature as well as on the initial vanadium coverage. Based on high resolution STM images a structure model for one kind of vanadium disilicide clusters exposing atomically flat surfaces was proposed.     

Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond (T_c∼5.4 K). We present that tunneling conductance spectra show temperature-dependent spatial variations. In the low-temperature region (T=0.47 K), the tunneling spectra do not show strong spatial dependence and a superconducting energy gap is observed independent of the surface morphology. In the high-temperature region (T=4.2 K), on the other hand, the tunneling conductance spectra show significant spatial dependence, indicating the inhomogeneous distribution of the superconducting property due to the distribution of boron atoms.     

Growth of Cr on Ir(1 1 1) studied by scanning tunneling microscopy

We have studied the room-temperature growth of Cr on Ir(1 1 1) by scanning tunneling microscopy. Even in the low-coverage regime, up to a total coverage of 2 monolayers (ML), Cr does not grow in the layer-by-layer mode. Instead, we observe islands with local coverages Θ between 1 ML and 5 ML. While the 1st layer growth is pseudomorphic, sporadic defect lines are observed in the 2nd layer. For Θ ? 3 ML periodic one-dimensional dislocation lines appear indicating the onset of strain relief. Scanning tunneling spectroscopy reveals that islands with Θ = 1 ML exist in two modifications. Though their tunneling spectra are qualitatively rather similar, direct comparison shows that the main peak is shifted by about 15 mV, resulting in peak positions of −0.255 V and −0.270 V. We interpret these two modifications as regular fcc Cr and Cr which exhibits a faulted hcp stacking on Ir(1 1 1), respectively. The assignment of fcc to areas directly attached to substrate steps together with the evolution of the ratio of the different ML-areas with coverage leads to the conclusion that hcp is the more favorable stacking.     

Growth mode and electronic structure of Au nano-clusters on NiO(0 0 1) and TiO2(1 1 0)

The growth mode and electronic structure of Au nano-clusters grown on NiO and TiO₂ were analyzed by reflection high-energy electron diffraction, a field-emission type scanning electron microscope, medium energy ion scattering and photoelectron spectroscopy. Au was deposited on clean NiO(0 0 1)-1 × 1 and TiO₂(1 1 0)-1 × 1 surfaces at room temperature with a Knudsen cell at a rate of 0.25-0.35 ML/min (1 ML = 1.39 × 10¹⁵ atoms/cm²:Au(1 1 1)). Initially two-dimensional (2D) islands with thickness of one Au-atom layer grow epitaxially on NiO(0 0 1) and then neighboring 2D-islands link each other to form three-dimensional (3D)-islands with the c-axis oriented to the [1 1 1] direction. The critical size to form 3D-islands is estimated to be about 5 nm². The shape of the 3D-islands is well approximated by a partial sphere with a diameter d and height h ranging from 2.0 to 11.8 nm and from 0.95 to 4.2 nm, respectively for Au coverage from 0.13 to 4.6 ML. The valence band spectra show that the Au/NiO and Au/TiO₂ surfaces have metallic characters for Au coverage above 0.9 ML. We observed Au 4f spectra and found no binding energy shift for Au/NiO but significant higher binding energy shifts for Au/TiO₂ due to an electron charge transfer from Au to TiO₂. The work function of Au/NiO(0 0 1) gradually increases with increase in Au coverage from 4.4 eV (NiO(0 0 1)) to 5.36 eV (Au(1 1 1)). In contrast, a small Au deposition(0.15 to 1.5 ML) on TiO₂(1 1 0) leads to reduction of the work function, which is correlated with an electron charge transfer from Au to TiO₂ substrate.     

Initial stages of hydroxide formation and its reduction on Co(0 0 0 1) studied by in situ STM and XPS in 0.1 M NaOH

In situ electrochemical scanning tunneling microscopy (STM) has been applied to study the initial stages of hydroxide formation and its reduction on Co(0 0 0 1) in 0.1 M NaOH. XPS investigations give chemical information about the adlayer composition after oxidation and at the different reduction stages. In the subpotential range of oxidation at E<−0.55 V (SHE) the formation of a Co(OH)₂(0 0 0 1) superstructure is observed. It shows a hexagonal symmetry with an average periodicity of P=1.25±0.20 nm. The coincidence cell of the observed structure consists of 16 unit cells Co(OH)₂(0 0 0 1) showing an average lattice parameter of a=0.33±0.05 nm and thus the Co(OH)₂ monolayer forms a 5 × 5 superstructure with respect to the underlying metallic Co(0 0 0 1) substrate. XPS results clearly prove the presence of hydroxide and exclude the formation of CoO in the subpotential range.At the very beginning of the reduction process small two-dimensional metal clusters and islands can be observed. It is assumed that they are crystallization nuclei for metal formation. They enlarge and grow together with other islands or larger terraces. During this reduction process two-dimensional adatomic arrays consisting of OH⁻-Co²⁺- OH⁻ trimers appear on the surface. Some of these trimers accumulate at step edges, and finally decorate them. This decoration builds up an energy barrier for further metal incorporation and prevents further growth of the terraces with remaining metal clusters on their surfaces. The reduction of the Co(OH)₂ layer is found to be not completed which is confirmed by XPS results.     

Formation and characterization of Rh-Mo bimetallic layers on the TiO2(1 1 0) surface

The investigation of Rh, Mo and Rh-Mo nanosized clusters formed by physical vapor deposition on TiO₂(1 1 0) single crystal was performed by X-ray Photoelectron Spectroscopy (XPS), Low Energy Ion Scattering (LEIS) and Auger Electron Spectroscopy (AES). There was no sign for site-exchange between Mo and Rh atoms during deposition of Mo onto Rh particles at 330 K. Mixing between Ti and Mo ions was facilitated at the Mo particle-titania interface due to reaction at 550-700 K. The redox process between titania and Mo deposit was hindered at 330 K by forming predeposited rhodium layer (Θ_Rh = 2.0 ML), but reached nearly the same extent as without Rh after moderate heating to 600 K. The encapsulation of Rh by titania was complete by about 700 K in the presence of 1.2 ML Mo, in case of Mo-predeposition and Mo-postdeposition as well. Elevating the temperature of TiO₂/Rh-Mo layers above 700 K, these metals form alloy at the Mo-Rh interface irrespective of deposition sequences.     

Formation and stabilization of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template

We demonstrate the growth of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template by in situ scanning tunneling microscopy (STM). These clusters form near a dimer row at one side of the half-unit cell (HUC); and with three different equivalent orientations. A cluster model comprising three top layer Si atoms bonded to six Fe atoms at the next layer in the 7 × 7 faulted-half template is proposed. The optimized cluster structure determined by first-principles total-energy calculation shows an inward-shifting of the three center Fe atoms. The clusters and the nearby center-adatoms of the next HUCs appear with a significantly reduced height below bias voltages 0.4 V in high resolution empty-state STM images, suggesting an energy gap opening near the Fermi level at these localized cluster and adatom sites. We explain the stabilization of the clusters on the 7 × 7 template using the gain in electronic energy as the driving force for cluster formation.     

Nanostructuring of Fe films by oblique incidence deposition on a FeSi2 template onto Si(1 1 1): Growth, morphology, structure and faceting

The growth of thin Fe films deposited at oblique incidence on an iron silicide template onto Si(1 1 1) single crystal has been investigated as a function of Fe thickness (0 < t_Fe ? 180 monolayers (MLs)) and incidence angle (0 ? θ ? 80°). The growth mode is determined in situ by means of scanning tunnelling microscopy (STM) and low energy electron diffraction (LEED). Stripes oriented perpendicularly to the incident atomic flux are formed for θ ? 30°. Self-correlation functions are used to extract characteristic lengths from STM images. The correlation lengths in the direction of the incident flux (ξ_x) and perpendicular to the atomic flux (ξ_y) grow with different powers versus time (ξ_x∝t^σ and ξ_y∝t^ρ, with σ = 0.34 ± 0.03 and ρ = 0.67 ± 0.03) following the exact solution of the (1 + 1) dimensional Kardar-Parisi-Zhang (KPZ) equation. The root mean square roughness follows also a scaling law for t_Fe < 120 ML leading to a growth exponent β = 0.73 ± 0.02. Shadowing and steering effects are discussed on the basis of our STM data.     

Vibrationally assisted diffusion of H2O and D2O on Pd(1 1 1)

The adsorption and diffusion of isolated H₂O and D₂O molecules on Pd(1 1 1) were studied using scanning tunneling microscopy at low temperature (∼40 K). At low tunneling voltage the diffusion is thermally activated. The diffusion rate is enhanced by several orders of magnitude when the tunneling electron has enough energy to excite the vibrational “scissor” mode of the molecule. An isotope effect was observed in the threshold voltage for electron-assisted diffusion of H₂O and D₂O.     

Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

Nucleation of ordered Fe islands on Al2O3/Ni3Al(1 1 1)

Scanning tunneling microscopy (STM) has been used to investigate the nucleation and stability of iron clusters on the Al₂O₃/Ni₃Al(1 1 1) surface as a function of coverage and annealing temperature. We show that atomic beam deposition of iron leads to hexagonally ordered cluster arrangements with a distance of 24 Å between the clusters evidencing the template effect of the alumina film. The shape of the iron clusters is two-dimensional (2D) at deposition temperatures from 130 K to 160 K and three-dimensional (3D) at 300 K. However, the 2D iron clusters grown between 130 K and 160 K are stable up to 350 K.     

High resolution scanning tunneling spectroscopy of ultrathin Pb on Si(1 1 1)-(6 × 6) substrate

The electronic structure of Si(1 1 1)-(6 × 6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb_(1 1 1) and with the diameter of only about 2 nm we detected the quantized electronic state with energy 0.55 eV below the Fermi level. Similarly, the I(V) characteristics made for the Si(1 1 1)-(6 × 6)Au surface reveal a localized energy state 0.3 eV below the Fermi level. These energies result from fitting of the theoretical curves to the experimental data. The calculations are based on tight binding Hubbard model. The theoretical calculations clearly show prominent modification of the I(V) curve due to variation of electronic and topographic properties of the STM tip apex.