Initial stages of oxidation of Cu(1 1 1)

Several surface analysis techniques were combined to study the initial stages of oxidation of Cu(1 1 1) surfaces exposed to O₂ at low pressure (<5 × 10⁻⁶ mbar) and room temperature. Scanning tunneling microscopy (STM) results show that the reactivity is governed by the restructuring of the Cu(1 1 1) surface. On the terraces, oxygen dissociative adsorption leads to the formation of isolated O adatoms and clusters weakly bound to the surface. The O adatoms are located in the fcc threefold hollow sites of the unrestructured terraces. Friedel oscillations with an amplitude lower than 5 pm have been measured around the adatoms. At step edges, surface restructuring is initiated and leads to the nucleation and growth of a two-dimensional disordered layer of oxide precursor. The electronic structure of this oxide layer is characterised by a band gap measured by scanning tunneling spectroscopy to be ∼1.5 eV wide. The growth of the oxide islands progresses by consumption of the upper metal terraces to form triangular indents. The extraction of the Cu atoms at this interface generates a preferential orientation of the interface along the close-packed directions of the metal. A second growth front corresponds to the step edges of the oxide islands and progresses above the lower metal terraces. This is where the excess Cu atoms extracted at the first growth front are incorporated. STM shows that the growing disordered oxide layer consists of units of hexagonal structure with a first nearest neighbour distance characteristic of a relaxed Cu-Cu distance (∼0.3 nm), consistent with local Cu₂O(1 1 1)-like elements. Exposure at 300 °C is necessary to form an ordered two-dimensional layer of oxide precursor. It forms the so-called “29” superstructure assigned to a periodic distorted Cu₂O(1 1 1)-like structure.     

Surface segregation of aluminum atoms on Cu-9 at.% Al(1 1 1) studied by Auger electron spectroscopy and low energy electron diffraction

Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were applied to investigate the segregation of aluminum atoms on a Cu-9 at.% Al(1 1 1) surface. We observed that the Al concentration in the top layer ranged between about 9 and 36 at.% after the sample we used was annealed at different temperatures. The phenomenon of Al atoms segregating on the surfaces was explained well by considering the diffusion length of Al atoms in bulk Cu. LEED measurements showed that R30° structures grew as the concentration of Al atoms increased. The segregation phenomena on surfaces resulted in a stable two-dimensional Cu₆₇Al₃₃ alloy phase in the top layer.     

Enhanced transient reactivity of an O-sputtered Au(1 1 1) surface

The interaction of SO₂ with oxygen-sputtered Au(1 1 1) (θ_oxygen  0.35 ML) was studied by monitoring the oxygen and sulfur coverages as a function of SO₂ exposure. The morphology of the sputtered Au is relatively smooth on a long length scale, but rough on a finer scale with islands averaging 15 nm. The rough surface is not stable to scanning with the STM. Two reaction regimes were observed: oxygen depletion followed by sulfur deposition. An enhanced, transient sulfur deposition rate is observed at the oxygen depletion point. This effect is specifically pronounced if the Au surface is continuously exposed to SO₂. The enhanced reactivity towards S deposition seems to be linked to the presence of highly reactive, under-coordinated Au atoms. Adsorbed oxygen appears to stabilize, but also to block these sites. In absence of the stabilization effect of adsorbed oxygen, i.e. at the oxygen depletion point, the enhanced reactivity decays on a timescale of a few minutes. These observations shed a new light on the catalytic reactivity of highly dispersed gold nanoparticles.     

Reactivity to sulphur of clean and pre-oxidised Cu(1 1 1) surfaces

The reactivity of clean and pre-oxidised Cu(1 1 1) surfaces exposed to sulphur (H₂S) has been studied at room temperature by Auger electron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. On the clean surface, the sulphur-saturated surface structure is dominated by the or so-called “zigzag” superstructure. It is shown that a single orientation domain is favoured by the slight misorientation (∼2°) of the surface with respect to the (1 1 1) plane. Scanning tunneling microscopy measurements also revealed two minority structures. Pre-oxidation was performed by exposure to 1.5 × 10⁴ L of O₂ at 300 °C. Under exposure to H₂S (1 × 10⁻⁷ mbar) at room temperature, the oxygen is totally substituted by sulphur. Once initiated, sulphur adsorption seems to propagate to cover the whole surface on the O-covered surface faster than on the clean Cu(1 1 1). At saturation by adsorbed sulphur, the surface is completely covered by the superstructure of highest coverage. This enhanced uptake of sulphur is assigned to the surface reconstruction of the copper surface induced by the pre-oxidation, causing a stronger reactivity of the Cu atoms released by the decomposition of the oxide.     

STM and LEED observations of a c(2 × 2) Ge overlayer on Pt(1 0 0)

We have investigated surface structures formed by deposition of 0.2 and 0.5-ML Ge on Pt(1 0 0) by using scanning tunneling microscopy (STM) and low electron energy diffraction (LEED). In addition, their temperature dependence and reactivity to CO have been studied. We observed the formation of disordered domains for Ge adatom coverages below 0.25-ML and complete c(2 × 2) structures at 0.25 to 0.5-ML Ge after annealing at 600-1200 K. Deposition of 0.2-ML Ge on a clean, hexagonally reconstructed (5 × 20)-Pt(1 0 0) substrate at 400 K lifts the reconstruction and ejects excess Pt atoms from the first layer into the adlayer. After annealing this surface to 600 K, the deposited Ge formed Ge adatoms on flat terraces and on round Pt adislands with incomplete c(2 × 2) structures, in addition to the presence of clean (1 × 1)-Pt(1 0 0) domains that were several nanometers across. Some domains of the unreconstructed (5 × 20)-Pt(1 0 0) surface still remained. After the deposition of 0.5-ML Ge and annealing at 600 K, disordered Ge domains disappeared and a c(2 × 2) Ge overlayer was produced all over the surface. Square terraces with square domains of the clean (1 × 1)-Pt(1 0 0) surface extended for nanometers. Annealing this surface to 900 K produced disordered Ge domains, and this was associated with an increase in Ge vacancies. When surfaces with 0.2-ML Ge were heated to 900 or 1200 K, or when a surface with 0.5-ML Ge was heated to 1200 K, larger domains of (5 × 20)-Pt(1 0 0) were formed with the agglomeration of disordered Ge adatoms. Pt clusters were observed in the Ge domains, and we consider these to be composed of those excess Pt atoms formed by lifting the reconstruction of the (5 × 20)-Pt(1 0 0) surface upon Ge agglomeration during cooling. A paper published elsewhere [T. Matsumoto, C. Ho, M. Batzill, B.E. Koel, Physical Review B, submitted for publication.] describes Na⁺-ion scattering spectroscopy (Na⁺-ISS) and X-ray photoelectron diffraction (XPD) experiments that distinguish between Ge present in an overlayer from incorporation into the top Pt layer to form a surface alloy for the surface structures reported here. Furthermore, these investigations revealed that disordered Ge adatoms observed herein might be associated with incomplete c(2 × 2) structures. Therefore, our observations of the formation of complete and incomplete domains of c(2 × 2) Ge adatoms indicate that interactions between Ge adatoms are repulsive at nearest neighbor distances and attractive at second-nearest neighbor distances. Regarding the reactivity of these surfaces, CO does not chemisorb on a Pt(1 0 0) surface with a c(2 × 2)-Ge overlayer and no measurable CO uptake was observed under UHV conditions at 220 K.     

Growth of Au thin film on Cu-modified Si(1 1 1) surface

Miniaturizing of electronic devices requires that conductive elements maintain advanced electrical characteristics upon reducing their geometrical sizes. For gold, which is valued for its high electrical conductivity and stability against ambient conditions, creation of extra-thin films on silicon is hampered by formation of the quite complex Au/Si interface. In the present work, by forming a Si(1 1 1)5.55 × 5.55-Cu surface reconstruction prior to Au deposition we formed Au films with smoother surface morphology and higher surface conductivity compared to Au film grown on a pristine Si(1 1 1)7 × 7 surface. Scanning tunnelling microscopy and four-point probe measurements were used to characterize the growth mode of the Au film on a Si(1 1 1)5.55 × 5.55-Cu reconstruction at room temperature.     

Formation of carbon-induced dimer vacancy defects on Si(0 0 1)-2 × 1 by thermal decomposition of organic molecules-lack of dependence on the molecules’ structure

Two large and complex adsorbed organic molecules, coronene (C₂₄H₁₂) and C₆₀, have been used to produce Si dimer vacancy defects on Si(0 0 1) by thermal decomposition. Studies by STM show that the aligned structural arrangement of the dimer vacancy defects produced is independent of the chemical structure of the organic molecules. This indicates that the chemistry of the thermally decomposed carbon species produced by decomposition of the organic molecule controls the organization of the Si dimer vacancy defects. It is found that ∼1 C atom is responsible for each dimer vacancy defect for both molecules in accordance with earlier studies of C₂H₂ decomposition on Si(0 0 1).     

Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

Growth of Ce on Rh(1 1 1)

We have studied the growth of cerium films on Rh(1 1 1) using STM (scanning tunneling microscopy), LEED (low energy electron diffraction), XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy). Measurements of the Ce films after room temperature deposition showed that Ce is initially forming nanoclusters in the low coverage regime. These clusters consist of 12 Ce atoms and have the shape of pinwheels. At a coverage of 0.25 ML (monolayer, ML) an adatom layer with a (2 × 2) superstructure is observed. Above 0.4 ML, Rh is diffusing through pinholes into the film, forming an unstructured mixed layer. Annealing at 250 °C leads to the formation of ordered Ce-Rh compounds based on the bulk compound CeRh₃. At a coverage of 0.1 ML, small ordered (2 × 2) surface alloy domains are observed. The exchanged Rh atoms form additional alloy islands situated on the pure Rh(1 1 1) surface, showing the same (2 × 2) superstructure as the surface alloy. At a coverage of 0.25 ML, the surface is completely covered by the surface alloy and alloy islands. The (2 × 2) structure is equivalent to a (1 1 1)-plane of CeRh₃, contracted by 6%. Annealing a 1 ML thick Ce layer leads to a flat surface consisting of different rotational domains of CeRh₃(1 0 0). The Rh needed for alloy formation comes from 50 Å deep pits in the substrate. Finally we show that LEIS (low energy ion scattering) is not suitable for the characterization of Ce and CeRh films due to strong effects of neutralization.     

Room and high-temperature scanning tunnelling microscopy and spectroscopy (HT-STM/STS) investigations of surface nanomodifications created on the TiO2(1 1 0) surface

High-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy and current imaging tunnelling spectroscopy (HT-STM/STS/CITS) were used to study the topographic and electronic structures changes due to surface modifications of the TiO₂(1 1 0) surface caused by the STM tip. In situ high-temperature STM results showed that the created modifications were stable even at elevated temperatures. The STS/CITS results showed the presence of energy gap below the Fermi level on the untreated regions. The disappearance of energy gap below the Fermi level on the modifications created by the tip was observed. It is assumed that the presence of the tip can change the chemical stoichiometry of the surface from TiO_2−x towards Ti₂O₃.     

Growth and morphology of Cobalt thin films on Pd(1 1 1)

We report on the growth of thin Co films on Pd(1 1 1) at three different temperatures 180 K, 300 K, and 550 K. The structure and morphology was determined by scanning tunneling microscopy and low energy electron diffraction. The growth mode was found to vary with temperature. For 180 K and 300 K, we observed a tendency to double layer growth for the initial layers while at elevated temperatures, the initial film grows in single layer. For most conditions, non-ideal three-dimensional growth was observed. Two-dimensional growth was only found for growth temperature of 550 K and coverages above 5 ML. Depending on temperature, the Co islands at low coverages exhibit three principally different shapes: dendritic at 180 K, hexagonal at 300 K and triangular at 550 K. For growth at 550 K and coverages above 5 ML, the islands changed to an irregular shape. This transition is most likely responsible for the transition to 2D growth. Further, the large strain is relaxed by the creation of a dislocation network with mixed fcc and hcp stacking. Depending on the temperature and coverage, a hexagonal or a triangular network was observed. Finally, we have investigated the effect of annealing Co films prepared at 180 K and 300 K. Heating to 490 K leads to coarsening and intermixing.     

The CuGaSe2(0 0 1) surface: A (4 × 1) reconstruction

We report on the formation of a stable (4 × 1) reconstruction of the chalcopyrite CuGaSe₂(0 0 1) surface. Using Ar⁺ ion-bombardment and annealing of epitaxial CuGaSe₂ films grown on GaAs(0 0 1) substrates it was possible to obtain flat, well-ordered surfaces showing a clear (4 × 1) reconstruction. The cleanliness and structure were analyzed in situ by AES and LEED. AES data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. Our results demonstrate that (0 0 1) surfaces of the Cu-III-VI₂(0 0 1) material can show stable, unfacetted surfaces.     

Investigation of STM tip influence on the recorded position of the Shockley surface state on Au(1 1 1)

Current imaging tunneling spectroscopy (CITS) carried out in UHV at room temperature was used to study the electronic structure of the Au(1 1 1) surface in the range of −1.0-1.0 eV. The CITS experiment showed the existence of the Shockley surface state (SS) located in range 0.3-0.7 eV below the Fermi level. A wide range of SS locations is explained by the influence of the electronic structure of the tip on the measurement of the tunneling current. This hypothesis is supported by a simple theoretical model. Finally, a new method of CITS analysis is suggested. The method is related to counting local maxima locations on each tunneling spectroscopy curve and building a histogram. This method of data analysis allows finding statistically the most frequently appearing maxima. Using the histogram method the location of the SS is estimated to 0.47 eV below the Fermi level.     

Structural evolution at the initial growth stage of perylene on Au(1 1 1)

We report on the structural evolution at the initial growth stage of perylene thin films on Au(1 1 1) surface. Scanning tunneling microscopy and spectroscopy have been employed to investigate the structural and electronic properties at 78 K. Rapid molecular diffusion was observed at low submonolayer coverage. Molecules form an ordered structure at monolayer coverage. For the second layer, impinging molecules nucleate into molecular islands with an ordered intermediate structure.     

Combined STM, LEED and DFT study of Ag(1 0 0) exposed to oxygen near atmospheric pressures

We have investigated the interaction of molecular oxygen with the Ag(1 0 0) surface in a temperature range from 130 K to 470 K and an oxygen partial pressure ranging up to 10 mbar by scanning tunneling microscopy, low electron energy diffraction, Auger electron spectroscopy and ab initio density functional calculations. We find that at 130 K, following oxygen exposures of 6000 Langmuirs O₂, the individual oxygen atoms are randomly distributed on the surface. When the sample is exposed to 10 mbar O₂ at room temperature, small, p(2 × 2) reconstructed patches are formed on the surface. After oxidation at ≈470 K and 10 mbar O₂ pressure the surface undergoes a c(4 × 6) reconstruction coexisting with a (6 × 6) superstructure. By ab initio thermodynamic calculations it is shown that the c(4 × 6) reconstruction is an oxygen adsorption induced superstructure which is thermodynamically stable for an intermediate range of oxygen chemical potential.     

Vanadium nanoclusters on Si(1 1 1) 7 × 7 surface studied by scanning tunneling microscopy

The size distribution and shape transition of self-assembled vanadium silicide clusters on Si(1 1 1) 7 × 7 have been investigated by scanning tunneling microscopy. Nanoclusters were formed by submonolayer vanadium deposition at room temperature followed by subsequent annealing (solid phase epitaxy - SPE). At room temperature, initially V-nanoclusters are formed which occupy sites avoiding the corner hole parts of the unit cells in the Si(1 1 1) 7 × 7 surface. Upon annealing, strong metal-silicon reaction occur leading to the formation of vanadium silicide nanoclusters. As a function of temperature, both, flat (2D) and three dimensional (3D) clusters have been obtained. After annealing at temperatures around 900 K many faceted clusters are created, whereas at higher annealing temperature, around 1300 K, predominantly 3D clusters are formed. The size distribution of SPE grown clusters could be well controlled in the range of 3-10 nm. The cluster size depends on the annealing temperature as well as on the initial vanadium coverage. Based on high resolution STM images a structure model for one kind of vanadium disilicide clusters exposing atomically flat surfaces was proposed.     

Dimerization of three xanthene dyes on Au(1 1 1) surface

The adsorption structures of three xanthene dyes (rhodamine B (Rh B), fluorescein and eosin) on Au(1 1 1) in HClO₄ solution, have been investigated by in situ scanning tunneling microscopy (STM) and cyclic voltammetry. High-resolution STM images reveal the molecular orientation and packing arrangement in the ordered adlayers. A (5 × 10) structure is found on Rh B adlayer. (5 × 8) structures are observed on fluorescein and eosin adlayers, respectively. An intriguing aspect of this work is that three xanthene molecules form dimeric structures on Au(1 1 1) surface. The electrostatic interaction and van der Waals force are responsible to the dimeric formation of Rh B, while the interaction between Br atoms and hydrogen bond correspond to the dimerization of eosin and fluorescein, respectively. The structural models are tentatively proposed for the three ordered adlayers. The results obtained will be helpful to understand the interaction mechanism of dimerization and the degradation mechanism of dye pollutant.     

Electron and lattice structure of ultra thin Ag films on Si(1 1 1) and Si(0 0 1)

We studied the low temperature (T ? 130 K) growth of Ag on Si(0 0 1) and Si(1 1 1) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3 × √3)R30° LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(1 1 1)(√3 × √3)R30°Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3 × √3)R30°Ag flat terraces in between. On Si(0 0 1) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(0 0 1)-2 × 1 with a twinned Ag(1 1 1) structure at coverage’s as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(1 0 0) surfaces has been studied as a function of temperature (40-300 K).     

Epitaxial C60 thin films on Bi(0 0 0 1)

We have used the Bi(0 0 0 1)/Si(1 1 1) template to grow highly ordered C₆₀ epitaxial thin films and analyzed them using scanning tunneling microscopy and low-energy electron microscopy. The in situ low-energy electron microscope investigations show that the initial nucleation of the C₆₀ islands on the surface takes place at surface defects, such as domain boundaries and multiple steps. The in-plane lattice parameters of this C₆₀ film turns out to be the same as that of the bulk fcc(1 1 1) C₆₀. The line-on-line epitaxial structure is realized in spite of a weak interaction between the C₆₀ molecules and Bi(0 0 0 1) surface, while scanning tunneling spectroscopy indicates that there is a negligible charge transfer between the molecules and the surface.