Tunneling current oscillations excited by DC voltage

Investigating a polycrystalline gold layer on glass by a scanning tunneling microscope in air, tunneling current oscillations were found, which are excited by the DC voltage across the gap. The oscillation amplitude is dependent on the place on the surface of the sample and correlates with its topography. The frequency spectra of these oscillations are influenced by resonances of the mechanical system (z-piezo/sample holder/transducer/sample). A piezoelectric transducer is able to detect alternating forces originating from the tunnel junction. The resonances in the spectrum of the AC tunneling current and the mechanical resonances of the STM system seem to be related. Trapping and subsequent delayed desorption of charge carriers at localized surface states could play a role in generating the observed time-dependent forces across the gap and thereby creating tunneling current oscillations.     

Electrical behavior of the Au/MoS2 interface studied by light emission induced by scanning tunneling microscopy

Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS₂ surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS₂ surface so that their electrical behavior can be changed depending on their position with regard to the other islands.     

Manipulating Ge quantum dots on ultrathin SixGe1−x oxide films using scanning tunneling microscope tips

Germanium quantum dots (QDs) were extracted from ultrathin Si_xGe_1−x oxide films using scanning tunneling microscope (STM) tips. The extraction was most efficiently performed at a positive sample bias voltage of +5.0 V. The tunneling current dependence of the extraction efficiency was explained by the electric field evaporation transfer mechanism for positive Ge ions from QDs to STM tips. Ge QDs (∼7 nm) were formed and isolated spatially by extracting the surrounding Ge QDs with an ultrahigh density of >10¹² cm⁻². Scanning tunneling spectroscopy of the spatially-isolated QDs revealed that QDs with an ultrahigh density are electrically-isolated from the adjacent dots.     

纳米隧道结的量子电容现象

利用STM针尖和二维Au纳米团簇构造的双隧道结，通过对单电子隧穿谱的测量，研究了纳米隧道结的电容随隧道结宽度的变化，发现电容随结宽度的变化偏离了经典电容的行为，为纳米隧道结的量子电容效应提供了实验证据。     

STM-induced photon emission spectroscopy of granular gold surfaces in air

Light emission has been detected under ambient conditions in the tip–sample region of a scanning tunneling microscope (STM) consisting of an etched gold tip and a granular gold film. The photon yield as a function of surface geometry (photon mapping) has been studied. By means of STM, it was possible to measure photon emission spectra locally. We have studied the effect of grain size and applied bias voltage on the spectrum. We found that the peak position in the photon emission spectrum shifts to a shorter wavelength when increasing the bias voltage and shifts to a longer wavelength when tunneling to larger grains. These effects can be understood in a simple model which considers tunneling electrons exciting localized surface plasmons which decay by emitting photons.     

Scanning probe microscopy characterization of gold-chemisorbed poplar plastocyanin mutants

Two poplar plastocyanin mutants adsorbed onto gold electrodes have been characterized at single molecule level by scanning probe microscopy. Immobilization of the two redox metalloprotein mutants on Au(1 1 1) surface was achieved by either a disulphide bridge (PCSS) or a single thiol (PCSH), both the anchoring groups having been introduced by site-directed mutagenesis. Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) analysis gives evidence of a stable and robust binding of both mutants to gold. The lateral dimensions, as estimated by STM, and the height above the gold substrate, as evaluated by AFM, of the two mutants well agree with crystallographic sizes. A narrower height distribution is observed for PCSS compared to PCSH, corresponding to a more homogeneous orientation of the former mutant adsorbed onto gold. Major differences between the mutants are observed by electrochemical STM. In particular, the image contrast of adsorbed PCSS is affected by tuning the external electrochemical potential to the redox levels of the mutant, consistent with some involvement of copper active site in the tunneling process. On the contrary, no contrast variation is observed in electrochemical STM of adsorbed PCSH. Moreover, scanning tunneling spectroscopy experiments reveal asymmetric I–V characteristics for single PCSS proteins, reminiscent of a rectifying-like behaviour, whereas an almost symmetric I–V relation is observed for PCSH.     

Direct measurement of electron transport features in cytochrome c via V–I characteristics of STM currents

The morphology of and electron tunneling through single and cluster cytochrome c molecules deposited on self-assembled dodecanthiol monolayer film on a gold substrate have been studied experimentally using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. STM images of a single cytochrome c molecule revealed a globular structure with a diameter of 4 nm and height of 1.5 nm. A spectroscopic study obtained by recording tunneling current–bias voltage (V–I) curves revealed that the STM current increases stepwise at asymmetric threshold sample bias voltages of +100 mV and –200 mV.     

Isochromat spectroscopy of photons emitted from metal surfaces in an STM

The pronounced variation of the intensity of photons emitted from the tunneling gap of an STM with respect to the applied bias voltage V_t is studied experimentally using simultaneous measurements of tunneling characteristics and photon emission. We show that the structure in isochromat photon spectra are determined by the following: bias-dependent changes in tunneling characteristics, density of initial and final states, and modifications of tip-induced plasmon modes. It is demonstrated that isochromat spectra provide a conclusive test for the inelastic tunneling mechanism. Coupling between tunneling electrons and tip-induced plasmon modes which gives rise to the intense photon emission observed is discussed within this model.     

Photo-induced tunneling spectroscopy of ReS2: Dramatic increase of the quantum efficiency by chemical treatment

In this work we present a systematic study of the local photovoltaic properties of ReS₂, using a scanning tunneling microscope (STM). The tunneling junction of the STM was optically illuminated during the tunneling process. The phase sensitive detected photo-induced tunneling current (PITC) was studied as a function of wavelength and surface topography. In order to improve the performance of ReS₂ solar cells, the samples were treated with NaI/I₂ and EDTA solutions. Relative to the untreated sample, the EDTA-treated samples show an increase in the photo-induced tunneling current by a factor of 8–10 in the whole spectral range, the NaI/I-treated samples by 2–3. Two dimensional mapping of the PITC was performed on an atomic scale and compared to the surface topography.     

Enhanced photon emission by field emission resonances and local surface plasmon in tunneling junction

We investigated the photon emission spectra on Ag (111) surface excited by tunneling electrons using a low temperature scanning tunneling microscope in ultrahigh vacuum. Characteristic plasmon modes were illustrated as a function of the bias voltage. The one electron excitation process was revealed by the linear relationship between the luminescence intensity and the tunneling current. Luminescence enhancement is observed in the tunneling regime for the relatively high bias voltages, as well as at the field emission resonance with bias voltage increased up to 9 V. Presence of a silver (Ag) nanoparticle in the tunneling junction results in an abnormally strong photon emission at the high field emission resonances, which is explained by the further enhancement due to coupling between the localized surface plasmon and the vacuum. The results are of potential value for applications where ultimate enhancement of photon emission is desired.     

介观LC电路中的量子隧道效应

考虑到电子在纳米电容器中的运动是一个单电子隧穿过程,因而将电容器作为一个隧道结,应用隧道模型的稳态法,研究了介观LC电路中的电流电压特性.结果表明:由于库仑力的作用,介观LC电路中存在着阈值电压.当外加电压小于阈值电压时,隧穿电流为零,显示出库仑阻塞现象;当外加电压远大于阈值电压时,隧穿电流与电压成正比. 关键词： 介观LC电路 库仑阻塞 单电子隧道过程     

Single quantum dots as scanning tunneling microscope tips

We report the use of single quantum dot structures as tips on a scanning tunneling microscope (STM). A single quantum dot structure with a diameter of less than 200 nm and a height of 2 μm was fabricated by reactive ion etching. This dot was placed on a 40 μm-high mesa and mounted on the tip of a STM. The topography of large structures such as quantum wires or gold test substrates is clearly resolved with such a tip. To check the transport properties of the tip, quantum dot arrays were fabricated on resonant tunneling double barrier structures using the same process parameters. Conventional tunneling spectroscopy clearly resolved the 0D states in our samples. Using a metal substrate as second electrode such STM tips can be used to perform high resolution energy spectroscopy on single dots and free standing wire structures.     

Photovoltaic characterization of WSe2 with the scanning tunneling microscope

In the present study we use the Scanning Tunneling Microscope (STM) as an instrument to investigate the photovoltaic properties of semiconducting materials. The surfaces of the layered semiconductor WSe₂ were optically illuminated during the tunneling process. The resulting photo-induced tunneling current (PITC) was measured as a function of the wavelength. Microscopic information on the energy dependent generation and recombination of the photo-electrons in the vicinity of the tunneling tip was obtained by this method without the necessity of covering the surface with a conducting electrode. The analysis of the wavelength dependence of the PITC points at the existence of excitonic excitations. Compared to the spectral response of conventional photosensitive heterodiodes our PITC spectra exhibit a more structured response and an increase of the signal in the UV region. Finally, PITC studies on differently treated WSe₂ surfaces show an improved photoactivity for WSe₂ crystals treated with NaI/I₂ solutions.     

Reversible local-modification of surface structure on clean Ge(0 0 1) by scanning tunneling microscopy below 80 K

The structure of the clean Ge(0 0 1) surface is locally and reversibly changed between c(4×2) and p(2×2) by controlling the bias voltage of a scanning tunneling microscopy (STM) below 80 K. It shows hysteresis for the direction of the sample bias voltage change. The c(4×2) structure is observed with the sample bias voltage V_b?−0.7 V. This structure is maintained at V_b?0.7 V with increasing the bias voltage from −0.7 V. When V_b is higher than 0.8 V, the structure changes to p(2×2). This structure is then maintained at V_b?−0.6 V with decreasing the bias voltage from +0.8 V. The area of the structure change can be confined in the single dimer row just under the STM tip using a bias voltage pulse. In particular, the minimum transformed length is four dimers along the dimer row in the transformation from p(2×2) to c(4×2). The observed local change of the reconstruction with hysteresis is attributed to the energy transfer process from the tunneling electron to the Ge lattice in the local electric field due to the STM bias voltage. A phenomenological model is proposed for the structure changes. It is based on a cascade inversion of the dimer buckling orientation along the dimer row.     

Scanning tunneling microscopy of a luttinger liquid

Explicit predictions for scanning tunneling microscopy (STM) on interacting one-dimensional electron systems are made using the Luttinger liquid formalism. The STM current changes with the distance from an impurity or boundary in a characteristic way, which reveals the spin-charge separation and the interaction strength in the system. The current exhibits Friedel-like oscillations, but also carries additional modulated behavior as a function of voltage and distance, which shows the spin-charge separation in real space. Moreover, very close to the boundary the current is strongly reduced, which is an indication of the interaction strength in the system.     

High temperature scanning tunneling microscopy of purely ion conducting yttria stabilized zirconia (YSZ)

Scanning tunneling microscopy (STM) on wide band gap insulators is generally not possible. Here we demonstrate that ionic insulators with high ion mobility, such as yttria stabilized zirconia, are an exception to this rule. The ion conductivity ensures that the sample maintains a defined potential relative to the STM tip and thus a stable tunnel junction. Consequently, ion conductors provide an opportunity for characterizing wide band gap insulators, and thin films and nanostructures supported on them by STM.     

Influence of Interorbital Interference on Tunneling Process in STM

We present a theoretical study of the influence of intra-atomic interorbital interference on the formation of STM images of metal surfaces. The obtained results show that this kind of interference may modify significantly the tunneling current by the increase or decrease of the current contributions flowing through different orbitals of the surface atoms. STM simulations performed for aluminium and nickel surfaces indicate that the height of corrugation and the topographies of STM images of different surfaces depend considerably on this interference.     

Modulation structure in the STM images of the non-metallic misfit-layer compound (PbS)1.12VS2

This paper presents the scanning tunneling microscopy (STM) results of the misfit-layer compound (PbS)_1.12VS₂, which is constructed of alternately stacking of PbS (Q) and VS₂ (H) layers. Temperature dependent resistivity measurements show a semiconducting behavior with small activation energies. Unlike the metallic 1Q/1H type of compounds we have succeeded to take both the STM images of a Q layer and a H layer, because electron tunneling from the underlying H layer is suppressed when intermediate positive bias voltage (V_b) is applied to a tip. At V_b = 0.15 V the image shows pseudo-tetragonal arrays of bright spots, although it is obscure with decreasing bias voltage and disappears at less than 10 mV. A modulation structure is found on the H layer of a stepped surface on which surface atoms are undulated in a period being twice the V-V interatomic distance in the [1 0]_H or the [1 1]_H direction.     

Characterization of heat-assisted magnetic probe recording on CoNi/Pt multilayers

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.