Nanostructure formation aided by self-organised Bi nanolines on Si(0 0 1)

We provide a mini review of recent theoretical investigations of nanostructure formation aided by self-organised Bi nanolines on the Si(0 0 1) surface. It is suggested that hydrogen-passivated single-domain Si(0 0 1) produced by the formation of defect-free, hundreds of nm long, and 1.2-1.5 nm wide Bi nanolines provides an appealing template with preferential sites for adsorption of other elements. Based on ab initio pseudopotential calculations it is suggested that using the Bi nanoline template it should be possible to grow the following structures: mixed Ge-Si dimer structures on the Si(0 0 1) terrace between two neighbouring Bi nanolines; small In nanoclusters along the nanoline; and line and cluster structures of Fe atoms with novel electronic and magnetic properties.     

Theoretical investigation of Mn adsorbates aside self-organised Bi nanolines on hydrogenated Si(0 0 1) surface

We have theoretically investigated the atomic structure, magnetic behaviour, and electronic properties of Mn adsorbates on hydrogen passivated self-organised Bi nanolines on the Si(0 0 1)surface. It is found that the most stable geometry for monolayer (ML) coverage of Mn is just underneath the first Si(0 0 1) surface layer. The Mn atoms in the optimised configuration are seven-fold coordinated with their neighbouring Si atoms. Total energy calculations suggest that the Mn adsorbates form a degenerate state of ferromagnetic and anti-ferromagnetic lines parallel and adjacent to the self-assembled Bi lines. The density functional band structure calculation within the local-spin density approximation shows that the ferromagnetic system behaves like a metal in both spin channels. On the other side, the anti-ferromagnetic phase exhibits a half-metallic phenomenon with semiconducting character for the majority spin channel and semi-metallic character for the minority spin channel.     

The dissociative adsorption of borane on the Ge(1 0 0)-2 × 1 surface: A density functional theory study

By means of cluster models coupled with density functional theory, we have studied the hydroboration of the Ge(1 0 0)-2 × 1 surface with BH₃. It was found that the Ge(1 0 0) surface exhibits rather different surface reactivity toward the dissociative adsorption of BH₃ compared to the C(1 0 0) and Si(1 0 0) surfaces. The strong interaction still exists between the as-formed BH₂ and H adspeices although the dissociative adsorption of BH₃ on the Ge(1 0 0) surface occurs readily, which is in distinct contrast to that on the C(1 0 0) and Si(1 0 0) surfaces. This can be understood by the electrophilic nature of the down Ge atom, which makes it unfavourable to form a GeH bond with the dissociating proton-like hydrogen. Alternatively, it can be attributed to the weak proton affinity of the Ge(1 0 0) surface. Nevertheless, the overall dissociative adsorption of BH₃ on group IV semiconductor surfaces is favourable both thermodynamically and kinetically, suggesting the interesting analogy and similar diversity chemistry of solid surface in the same group.     

Water adsorption on hydrogenated Si(1 1 1) surfaces

The adsorption of water on the hydrogen terminated Si(1 1 1) surface is studied by means of first-principles calculations as well as contact angle measurements. Possible initial adsorption configurations for single water molecules and the potential energy surface are calculated. Only small adsorption energies of the order of meV are predicted. Calculations for higher coverage show that the water-water interactions are stronger than the water-surface bonding. The contact angle formed between a water droplet on the surface approximated from the total-energy calculations amounts to 88°, while our measured value is 91°.     

Perturbation of Ge(1 1 1) and Si(1 1 1)√3α-Sn surfaces by adsorption of dopants

We test the response of the √3 × √3α reconstructions formed by 1/3 monolayer of tin adatoms on silicon and germanium (1 1 1) surfaces upon doping with electrons or holes, using potassium or iodine as probes/perturbers of the initial electronic structures. From detailed synchrotron radiation photoelectron spectroscopy studies we show that doping with either electrons or holes plays a complimentary role on the Si and Ge surfaces and, especially, leads to complete conversion of the Sn 4d two-component spectra into single line shapes. We find that the low binding energy component of the Sn core level for both Si and Ge surfaces corresponds to Sn adatoms with higher electronic charge, than the Sn adatoms that contribute to the core level high binding energy signal. This could be analyzed as Sn adatoms with different valence state.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

Study of vacancy on diamond (1 0 0) (2 × 1) surface from first-principles

Structure and energy related properties of neutral and charged vacancies on relaxed diamond (1 0 0) (2 × 1) surface were investigated by means of density functional theory. Calculations indicate that the diffusion of a single vacancy from the top surface layer to the second layer is not energetically favored. Analysis of energies in charged system shows that neutral state is most stable on diamond (1 0 0) (2 × 1) surface. The multiplicity of possible states can exist on diamond (1 0 0) surface in dependence on the surface Fermi level, which supports that surface diffusion of a vacancy is mediated by the change of vacancy charge states. Analysis of density of states shows surface vacancy can be effectively measured by photoelectricity technology.     

Characterization of diamond (1 0 0) surface with oxygen termination

Ab initio density functional theory (DFT) was employed to study reconstructions of diamond (1 0 0) surfaces in the presence of hydrogen, oxygen and hydroxyl. Clean and (2 × 1):1H surfaces are taken as reference. The properties of oxidization diamond surfaces with several adsorption structures, namely, O-on-top (OT) site, O-bridge (BR) site, hydroxyl (-OH), hydroxyl/hydroxyl, OT/hydroxyl, BR/hydroxyl have been considered. The calculated results indicate that the BR model is much more stable than the OT model, and the most energetically favorable structures of oxygenated surfaces are those with chemisorbed hydroxyl (-OH) group. Furthermore, the stability of the structures is also discussed from the point of HOMO-LUMO gap. Analysis of electronic structures shows that the presence of hydrogen induces surface conductivity whereas oxygen weakens it.     

Ab initio calculations of surface structure and electronic properties caused by adsorption of Ca atoms on a Si(1 1 0) surface

The adsorption of Ca metals onto a Si(1 1 0) surface has been theoretically investigated by first-principle total-energy calculations. We employed a local density approximation of the density functional theory as well as a pseudopotential theory to study the atomic and electronic properties of the Ca/Si(1 1 0) structure. The (1×1) and (2×1) surface structures were considered for Ca coverages of 0.5 and 0.25 ML, respectively. It is found that the (1×1) phase is not expected to occur even for rich Ca regime. It was found that Ca adatoms are adsorbed on top of the surface and form a bridge with the uppermost Si atoms. The most stable structure of Ca/Si(1 1 0)-(2×1) surface produces a semiconducting surface band structure with a direct band gap that is slightly smaller than that of the clean surface. We have observed one filled and two empty surface states in the gap region. These empty surface states originated from the uppermost Si dangling bond states and the Ca 4s states. Furthermore, the Ca-Si bonds have an ionic nature with almost complete charge transfer from Ca to the surface Si atoms. The structural parameters of the ground state atomic configuration are detailed and compared with the available results of metal-adsorbed Si(1 1 0) surface, Ca/Si(0 0 1), and Ca/Si(1 1 1) structures.     

Ge adsorption on SiC(0 0 0 1): An ab initio study

In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)- and (3 × 3) surfaces. We find that Ge adatoms lying on the topmost sites of the and (3 × 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si → Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the surface, and Ge nanocluster on the (3 × 3) surface are the energetically more stable configurations, in accordance with recent experimental findings.     

Epitaxial growth of Bi thin films on Ge(1 1 1)

We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2×1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1×1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6-10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1).     

Optical anisotropy of the In/Si(1 1 1)(4 × 1)/(8 × 2) nanowire array

Ab initio calculations of the reflectance anisotropy of Si(1 1 1)-In surfaces are presented. A very pronounced optical anisotropy around 2 eV is found that is related to In-chain states. The distortion of the indium chains characteristic for the (4 × 1) → (8 × 2) phase transition results in a splitting of the 2 eV peak, as observed experimentally. The splitting occurs irrespective wether the phase transition occurs according to the trimer or hexamer model.     

Coadsorption of CN and O on Cu (1 0 0) surface: A density functional study

The adsorption of cyanide (CN) or oxygen atom, as well as the coadsorption of CN + O on Cu (1 0 0) surface is studied by using density functional theory (DFT) and the cluster model method. Cu₁₄ cluster is used to simulate the surface. Perpendicular and parallel bonding geometries of CN adsorbed on Cu (1 0 0) surface are considered, respectively. The present calculations show that the CN may be absorbed on top and bridge sites by carbon atom of cyanide (C-down), and C-down on top site is the most favorable. The adsorbed C-N stretch frequencies compared with that of the gaseous CN species are all red-shifted, except the C-down on top site. The charge transfer from the surface to the CN species leads to an increase in work function for the Cu surface. The oxygen atom adsorbed on the four-fold hollow site of Cu (1 0 0) is the most favorable, and is consistent with the experimental study. The coadsorption of O at a four-fold hollow site tends to block adsorption of CN at the nearby sites. If O coverage increases, the CN may be adsorbed on the top and bridges sites with the C-down model. The reaction CN + O → OCN on the Cu (1 0 0) is predicted to be exothermic, and formed OCN species may be stably absorbed on the Cu (1 0 0).     

Structural analysis of the c(4 × 2) reconstruction in Si(0 0 1) and Ge(0 0 1) surfaces by low-energy electron diffraction

The c(4 × 2) structures in (0 0 1) surfaces of Si and Ge have been studied by low-energy electron diffraction (LEED). Using a proper cleaning method for the Si surface, we were able to observe clear c(4 × 2) LEED patterns up to incident energy of ∼400 eV as well as the Ge surface. Extensive experimental intensity-voltage curves allowed us to optimize the asymmetric dimer model up to the eighth layer (including the dimer layer) in depth in the dynamical LEED calculation. Optimized structural parameters are almost the same for the Si and Ge except for the height of the buckled-up atom of the asymmetric dimer. For the Ge surface, the structural parameters are in excellent agreement with those obtained by a previous theoretical calculation. The tilt angle and bond length of the dimer are 18 ± 1 (19 ± 1)° and 2.4 ± 0.1 (2.5 ± 0.1) Å for the Si(0 0 1) (Ge(0 0 1)), respectively.     

A periodic density functional theory study of the dehydrogenation of methanol over CuCl(1 1 1) surface

The decomposition of methanol on clean and oxygen-precovered CuCl(1 1 1) surface have been studied with the method of density functional theory-generalized gradient approximation (DFT-GGA) and the periodic slab models. The effects of different methanol coverages up to one monolayer are investigated. The activation of the O-H bond of methanol to form the methoxide intermediate, the activation of the C-H bond to form the hydroxymethyl intermediate and the activation of the C-O bond to form methyl are examined. These intermediates can subsequently react to form methoxide, hydroxymethyl, methyl, formaldehyde, formyl, and finally CO on the surface. The chemisorption energies of CH₃OH, CH₃O, H₂COH, CH₃, H₂CO, HCO, OH and CO at their most favorable adsorption sites are predicted to be −57.9, −235.3, −172.9, −170.5, −67.8, −192.4, −309.5 and −105.7 kJ/mol, respectively. We also confirm that the O-H bond-breaking paths have lower energy barrier, compared to the C-O and C-H bond-breaking paths. However, these reactions need a lower energy barrier when precovered oxygen atoms participate in these reactions.     

ARPES measurements on Si(1 1 1) hole subband induced by Pb and Ga adsorption

The subband dispersions in the Si(1 1 1) p-type inversion layers induced by Pb and Ga adsorbed surface structures were measured by angle-resolved photoemission spectroscopy (ARPES). The surface structures used here were and Si(1 1 1)6.3 × 6.3-Ga. is a new surface phase found in this study. Because it is significant in our study to investigate potential effects of surface superstructures on the hole subband dispersion, we investigated the subband energy levels quantitatively comparing them with those calculated using the triangular approximation. It was found that the energy separation of the adjacent subband quantum levels in the inversion layers induced by gallium adsorption does not follow the triangular approximation. The possible band bending shape was proposed to explain the quantum level spacing of the subbands in Ga-induced inversion layers.     

A theoretical study of the water gas shift reaction mechanism on Cu(1 1 1) model system

The water gas shift (WGS) reaction is an important reaction system and has wide applications in several processes. However, the mechanism of the reaction is still in dispute. In this paper we have investigated the reaction mechanism on the model Cu(1 1 1) system using the density functional method and slab models. We have characterized the kinetics and the thermodynamics of the four reaction pathways containing 24 elementary steps and computed the reaction potential energy surfaces. Calculations show that the formate (HCOO) intermediate mechanism (CO + OH → HCOO → CO₂ + H) and the associative mechanism (CO + OH → CO₂ + H) are kinetically unlikely because of the high formation barrier. On the other hand, the carboxyl (HOCO) intermediate mechanism (CO + OH → HOCO → CO₂ + H) and the redox mechanism (CO + O → CO₂) are demonstrated to be feasible. Our calculations also indicate that surface oxygen atoms can reduce the barriers of both water dissociation and HOCO decomposition significantly. The calculated potential energy surfaces show that the water dissociation which produces OH groups is the rate-determining step at the initial stage of the reaction or in the absence of surface oxygen atoms. With the development of the reaction or in the presence of oxygen atoms on the surface, CO + OH → HOCO and CO + O → CO₂ become the rate-limiting step for the carboxyl and redox mechanisms, respectively.     

First-principle study of NO adsorption on the LaFeO3 (0 1 0) surface

The adsorption of NO molecule on the LaFeO₃ (0 1 0) surface was studied using first-principle calculations based on density functional theory. The calculated results indicate that the Fe-top site is the most favorable for NO adsorption. The N-O bond length, Mulliken charge, and the N-O vibration frequency of the NO molecule are discussed after adsorption. The analysis results of the density of the states show that when NO is adsorbed with the Fe-NO configuration, the bonding mechanism is mainly from the interaction between the NO and the Fe d orbit.     

Ge quantum dots growth on nanopatterned Si(0 0 1) surface: Morphology and stress relaxation study

The self-organized growth of germanium quantum dots on square nanopatterned Si(0 0 1) substrates is investigated by scanning tunnelling microscopy (STM) and grazing incidence X-ray diffraction (GIXRD) techniques. A regular surface patterning in the 10-100 nm period range is obtained by etching an interface dislocation network obtained by the controlled molecular bonding of Si substrates. The depth of the silicon surface profile is increased by a double etching process. Growth experiments are performed by solid source molecular beam epitaxy (MBE), and for deep trenches, germanium growth conditions are optimized to obtain one Ge dot per Si mesa. It is shown that the trench depth and the mesa profile strongly affect the dot size and its coincidence with the initial regular surface network. Anomalous GIXRD measurements are performed to highlight the Ge elastic relaxation and intermixing during heteroepitaxial growth. We report a significant modification in the stress state of Ge dots as a function of thermal annealing after growth.     

Interaction of 2,2,6,6-tetramethyl-3,5-heptanedione with the Si(1 0 0)-2 × 1 surface: Scanning tunneling microscopy and density functional theory study

Room temperature adsorption and reaction of 2,2,6,6-tetramethyl-3,5-heptanedione (dpmH) on the Si(1 0 0)-2 × 1 surface has been studied with ultra-high vacuum scanning tunneling microscopy (UHV-STM) and temperature programmed desorption (TPD). The molecule is found to chemisorb as a mixture of at least five distinct species. Density functional theory (DFT) was used to calculate the structures and adsorption energies of 12 possible addition products. Unique bonding assignments for each experimental feature are proposed by consideration of a common intermediate reaction network, and a comparison of possible reaction pathways leading to the final products. These assignments are: OH inter-dimer dissociation, OH intra-dimer dissociation, 1,5 intra-dimer addition, 1,5 inter-dimer addition, and intra-dimer [2 + 2]CO addition with OH dissociation on an adjacent dimer. TPD and STM results show that the molecule dissociates completely upon annealing to 700 °C with formation of the c(4 × 4) phase at low exposures, and SiC islands for exposures exceeding 0.15 L.