GaAs薄膜的有效量子限制长度及其极化子特性

本文用分数维方法研究Al_xGa_1-xAs衬底上GaAs薄膜中的极化子特性, 提出了确定GaAs薄膜的有效量子限制长度的一个新方法, 解决了原来方法中在衬底势垒处有效量子限制长度发散的困难, 得到了Al_xGa_1-xAs衬底上GaAs薄膜中的极化子的维数和结合能. 关键词： 分数维方法 极化子 GaAs薄膜     

固体中的极化子与双极化子

离子晶体通常具有较高的介电常数,带电粒子在晶体中会引起介电极化,其作用相当于一个可以束缚粒子的势阱.若粒子在势阱中的状态是稳定的,就有可能形成所谓的极化子与双极化子.本文采用一种简化的处理方法,将晶体材料当作各向同性的均匀介质,主要利用经典物理图像和三维量子谐振子模型,分别计算了介质中极化子与双极化子的基态能量,并进行了简要的理论分析.     

极化子和双极化子在齐聚物中的稳定性

导电聚合物中的元激发稳定性问题对于认识和理解有机材料中的自旋极化输运现象是极其重要的.针对目前存在的极化子与双极化子之间的争论,本文从半经验的Austin Model 1(AM1)方法出发,对齐分子噻吩的掺杂态进行了研究.通过对极化子和双极化子体系能量的比较,发现双极化子可以转换为极化子,从而揭示出在有机半导体材料中可以实现自旋极化输运.     

二维极化子在磁场中的基态能量

谐振子算符的代数运算方法被用于研究磁场中同时与表面光学声子及表面声学声子相互作用的二维电子。得到二维极化子在强磁场中直至四级微扰的基态能量以及它在任意强经磁场中的二级微扰基态能量表达式。结果发现,对磁场中二维极化子基态能量的影响中,表面声学声子有着与表面光学声子同样的甚至更为突出的贡献,是不容忽视的。 关键词：     

混合卤化物中的极化子与双极化子

应用紧束缚双带模型对混合卤化物的电荷掺杂性质进行了计算,发现单电荷掺杂在混合卤化物中形成极化子,双电荷掺杂则形成稳定的双极化子;单体的长度和界面耦合都对极化子和双极化子的产生和稳定性有影响.混合卤化物的单体对掺杂电荷具有选择性;电子-电子相互作用并不能使形成双极化子的两个同号电荷相互排斥而形成两个单极化子.在具有电荷自发转移的材料中,混合卤化物单体对掺杂电荷没有像其他混合卤化物一样的选择性,掺杂电荷的定域位置取决于两种单体对该电荷的束缚能力. 关键词： 混合卤化物 极化子 电荷约束     

极化子单激发态的反向极化研究

通过对有机高分子中极化子的单激发态进行研究，发现该态在外电场下呈现反向极化特征，极化规律与双激子态类似.在强电场下，反向极化消失，极化子单激发态解离为一个单极化子和一个双极化子态. 关键词： 极化子态 激子态 反向极化     

YBCO薄膜中自旋极化准粒子的注入效应

采用Nd0 .7Sr0 .3MnO3/SrTiO3/YBa2 Cu3O7-δ的异质结构 ,研究了自旋极化准粒子的注入效应 .在 5 6 μm宽的YBCO膜条上成功地制备了与超导膜条同样宽度但不同长度的六个注入结区 ,长度L分别为 80 μm ,4 0 μm ,2 0 μm ,10 μm ,5 μm和 2 μm .80nm厚的YBCO薄膜在 16K温度下Jc 为 2× 10 5A/cm2 .Iin=0 .5mA的自旋电流注入下 ,随L从 80 μm逐渐顺次减小时 ,注入效率 η =ΔJc/ΔJin逐渐增大 .而当L≤ 2 0 μm后 ,η不再增加 ,达到几乎相同的值 (～ 6 ) .初步分析认为这与自旋极化准粒子在超导膜内的有效自旋扩散长度有关 .异质结构中YBCO薄膜的超导电性以及注入窗口的尺寸对获得大的自旋注入效率十分重要 .     

钙钛矿锰氧化物中的极化子研究

钙钛矿锰氧化物(以下简称锰氧化物,如La_1-xSr_xMnO₃等,x为掺杂浓度)因其优异的电、磁性质受到人们广泛的关注,但是对于其材料内部载流子性质的认识至今仍没有统一定论.本文基于锰氧化物内Mn—O链的特点,建立一维紧束缚模型,对锰氧化物载流子的性质展开研究.发现在掺杂浓度x=0.5时,系统处于铁磁态,自旋能级完全劈裂,价带和导带之间存在带隙,所有电子态呈现扩展行为.进一步掺杂,将出现局域电子态,同时伴随着晶格的局域畸变,形成所谓的极化子.伴随着极化子的出现,带隙中出现极化子深能级.极化子携带的电荷量越多,形成的晶格缺陷越深,局域能级也越深.当极化子的电荷量继续增加时,极化子解离,载流子倾向于形成能量更低的正反"孤子"对.     

聚噻吩中双电子极化子附近的二维局域振动模

将聚噻吩的一维SSH孤子模型推广到二维平面,研究了聚噻吩双电子极化子附近的二维局域振动模.计算结果表明双电子极化子附近存在15个局域振动模,其中4个奇宇称模与4条强红外吸收谱线1020,1120,1200,1323cm^-1相对应,4个偶宇称模恰与4条Raman吸收峰700,1047,1175,1220cm^-1一致. 关键词：     

一维分子晶体中的极化子

本文从量子化的Holstein模型出发,运用相干态展开法和能量极小原理,通过实施连续近似得到了一维分子晶体模型处于基态的极化子满足的非线性薛定谔方程及其定态孤子解、基态能量、晶格位移,其结果与Holstein T[1].从半经典理论所得的结果完全一致,因此相干态展开方法在处理与极化子有关的其他物理问题中是一种非常有效的方法.     

Novel method to determine effective length of quantum confinement using fractional-dimension space approach

The binding energy and effective mass of a polaron confined in a GaAs film deposited on an Al_xGa_1-x As substrate are investigated, for different film thickness values and aluminum concentrations and within the framework of the fractional-dimensional space approach. Using this scheme, we propose a new method to define the effective length of the quantum confinement. The limitations of the definition of the original effective well width are discussed, and the binding energy and effective mass of a polaron confined in a GaAs film are obtained. The fractional-dimensional theoretical results are shown to be in good agreement with previous, more detailed calculations based on second-order perturbation theory.     

Temperature Dependence of Polaron Cyclotron Resonance Mass in GaAs/AlGaAs Heterostructures

The temperature dependence of polaron cyclotron resonance mass in GaAs/AlGaAs heterostructures is reinvestigated theoretically. By taking into account the electron-longitudinal-optic phonon interaction with temperature-dependent many-body effects, the conduction band non-parabolicity, and the influence of nonzero magnetic field, a good agreement with experiment is obtained.     

Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates

Binding energies of excitons in GaAs films on Al_xGa_1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on Al_xGa_1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.     

表面氧化层效应对测量临界点跃迁的影响：分数维空间方法

运用椭偏技术和分数维空间方法,对Si-SiO＿2模型考察了 表面氧化层的存在对从实验测得的光谱中确定Si临界点跃迁参数的影响. 计算结果表明，表 面氧化层效应使Si的介电谱发生畸变，由此得到的临界点跃迁参数较真值会有一个偏移：振 幅与维度值较小，寿命线宽较大，并且这种影响随氧化层厚度的增加而加强. 但禁带能受表面氧化层效应的影响却很小，可忽略不计. 关键词： 分数维空间方法 椭偏技术 表面氧化层效应 临界点跃迁     

Exciton and donor binding energies in quantum-well wires and quantum dots a fractional-dimensional space approach

A simple method for calculating the free-exciton binding energies in the fractional-dimensional-space model for single-quantum-well structure has been extended to quantum-well wires and quantum dots, in which the real anisotropic system is modelled through an effective isotropic environment with a fractional dimension. In this scheme, the fractional-dimensional parameter is chosen via an analytical procedure and involves no ansatz. We calculated the ground-state binding energies of excitons and donors in quantum-well wires with rectangular cross sections. Our results are found to be in good agreement with previous variational calculations and available experimental measurements. We also discussed the ground-state exciton binding energy changing with different shapes of quantum-well wires,     

A Polaron in a Quantum Dot Quantum Well

The polaron effect in a quantum dot quantum well (QDQW)system is investigated by using the perturbation method. Both the bound electron states outside and inside the shell well are taken into account . Numerical calculation on the CdS/HgS QDQW shows that the phonon correction to the electron ground state energy is quite significant and cannot be neglected.     

Polaron effects in cylindrical GaAs/Al_xGa_(1-x)As core-shell nanowires

By the fractal dimension method, the polaron properties in cylindrical GaAs/Al_xGa_(1-x)As core-shell nanowire are explored. In this study, the polaron effects in GaAs/Al_xGa_(1-x)As core-shell nanowire at different values of shell width and aluminum concentration are discussed. The polaron binding energy, polaron mass shift and fractal dimension parameter are numerically worked out each as a function of core radius. The calculation results show that the binding energy and mass shift of the polaron first increase and then decrease as the core radius increases, forming their corresponding maximum values for different aluminum concentrations at a given shell width. Polaron problems in the cylindrical GaAs/Al_xGa_(1-x)As core-shell nanowire are solved simply by using the fractal dimension method to avoid complex and lengthy calculations.     

Polaron effect on the optical rectification in spherical quantum dots with electric field

The polaron effect on the optical rectification in spherical quantum dots with a shallow hydrogenic impurity in the presence of electric field is theoretically investigated by taking into account the interactions of the electrons with both confined and surface optical phonons. Besides, the interaction between impurity and phonons is also considered. Numerical calculations are presented for typical Zn_(1-x)Cd_xSe/ZnSe material. It is found that the polaronic effect or electric field leads to the redshifted resonant peaks of the optical rectification coefficients. It is also found that the peak values of the optical rectification coefficients with the polaronic effect are larger than without the polaronic effect, especially for smaller Cd concentrations or stronger electric field.     

抛物阱中极化子效应对D-心的影响

采用改进的LLP方法在考虑体声子影响的情况下研究了抛物量子阱中电子-LO声子相互作用对D^-心能量的影响.研究结果表明,阱宽较小时,D^-心的基态能量和结合能随着阱宽L的增大而急剧减小;阱宽较大时,能量的减小比较缓慢,最后接近体材料中的三维值.并且得出了电子-LO声子相互作用可使D^-心的结合能有显著的提高.