(Ni0.81Fe0.19)1－xCrx作为种子层对NiFe/PtMn双层膜交换偏置的影响

将NiFe/PtMn双层膜生长在(Ni_0.81Fe_0.19)_1-xCr_x种子层材料上，通过改变种子层中Cr的原子含量，系统的研究了NiFe/PtMn双层膜中PtMn晶粒尺寸和织构对交换偏置的影响.对退火270℃，5h后的NiFe/PtMn双层膜磁性的研究表明,PtMn织构强弱对交换偏置场的影响不明显，而PtMn的晶粒尺寸是影响交换偏置场的主要因素，PtMn颗粒的相干长度在11.3nm左右时得到了较大的交换偏置场. 关键词： NiFe/PtMn双层膜 交换偏置场     

Ni81Fe19/Cr82Al18双层膜中的交换偏置

研究了直流磁控溅射法制备的Ni₈₁Fe₁₉/Cr₈₂Al₁₈双层膜中的交换耦合.样品的室温矫顽力与1/t^{3/2_FM(t_FM为铁磁层厚度）近似成正比例关系,从而表明在Ni₈₁Fe₁₉/Cr₈₂Al₁₈中交换耦合为铁磁/反铁磁界面的随机相互作用.另外还讨论了反铁磁层厚度对交换偏置的影响. 关键词：}     

合成反铁磁Ni81Fe19/Co90Fe10/Ru/Co90Fe10/Ni81Fe19的研究

采用直流磁控溅射方法制备了一系列的合成反铁磁及以其为自由层的自旋阀.研究发现,在Ni₈₁Fe₁₉与Ru层之间插入适当厚度的Co₉₀Fe₁₀层后,可有效地提高合成反铁磁两磁性层间的反铁磁耦合强度,得到具有饱和场H_s更高、饱和磁化强度M_s更低、热稳定性更好的合成反铁磁.另外,以这种合成反铁磁作自旋阀的自由层时,可有效提高自旋阀的稳定性. 关键词： 合成反铁磁 退火 自旋阀     

PtMn层厚度对NiFe/PtMn双层膜交换偏置形成及热稳定性的影响

采用磁控溅射的方法制备了一组以(Ni_0.81Fe_0.19)_1-xCr_x作为缓冲层的NiFe/PtMn双层膜样品，研究了NiFe/PtMn双层膜的形成过程和热稳定性.实验表明，Cr成分的不同会引起NiFe/PtMn双层膜中PtMn层晶粒尺寸的不同，使NiFe/PtMn双层膜的交换偏置场与PtMn层厚度之间呈现不同的变化关系.热稳定性实验表明，PtMn晶粒尺寸较大的样品，出现交换偏置现象所需要的临界厚度较小，热稳定性好，这与Mauri的理论模型一致. 关键词： NiFe/PtMn双层膜 交换偏置场 热稳定性     

分子束外延生长Fe/Fe50Mn50双层膜的交换偏置

利用表面磁光克尔效应和铁磁共振对分子束外延生长的Fe/Fe₅₀Mn₅₀双层膜的交换偏置场和矫顽力进行了研究,实验结果表明,当反铁磁层厚度小于55nm时 ,不出现交换偏置,而当大于这一厚度时,出现交换偏置;大约在7nm时,达到极大值.随着 反铁磁层厚度的继续增大,偏置场和矫顽力随Fe₅₀Mn₅₀膜厚的增大 而下降.铁磁共振实验结果表明样品的磁性存在单向各向异性.并对上述结果进行了讨论. 关键词： 分子束外延 50Mn₅₀')" href="#">Fe/Fe₅₀Mn₅₀ 双层膜 交换偏置     

Dy,Co共掺杂对BiFeO3陶瓷磁特性和磁相变温度Tc的影响

采用快速液相烧结法制备BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0, 0.05, 0.1, 0.15)陶瓷样品. 实验结果表明: 所有样品的主衍射峰与纯相BiFeO₃相符合且具有良好的晶体结构, 随着Co³⁺掺杂量的增大, Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品的主 衍射峰由双峰(104)与(110)逐渐重叠为单峰(110), 当掺杂量x>0.05时, 样品呈现正方晶系结构; SEM形貌分析可知: Dy³⁺, Co³⁺共掺杂使BiFeO₃晶粒尺度由原来的3—5 μ减小到约1 μ. 室温下, BiFeO₃样品表现出较弱的铁磁性, 随着Dy³⁺和Co³⁺掺杂, BiFeO₃样品的铁磁性显著提高. 在外加磁场为30 kOe的作用下, Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0.05, 0.1, 0.15)的M_r分别为0.43, 0.489, 0.973 emu/g; M_S分别为0.77, 1.65, 3.08 emu/g. BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品磁矩M随着温度T的升高而逐渐减小, Dy掺杂使BiFeO₃样品的T_N由644 K升高到648 K, 而T_C基本没有变化. Dy和Co共掺杂导致BiFeO₃样品磁相变温度T_C由870 K降低到780 K, 其T_C变化主要取决于Fe-O-Fe反铁磁超交换作用的强弱和磁结构的相对稳定性. 关键词： 铁磁电材料 磁滞回线 磁相变温度     

用两带Ginzburg-Landau理论分析两带超导体Lu2Fe3Si5的表面临界磁场

用两带Ginzburg-Landau(GL)理论分析了Lu₂Fe₃Si₅的表面临界磁场,当超导体的表面与任一主晶面重合,且外磁场平行于超导体的表面时,比值H_c3/H_c2(H_C2是Lu₂Fe₃Si₅的上临界磁场)强烈依赖于温度. 当超导体的表面是bc平面,且 关键词： 两带超导体 GL理论 2Fe₃Si₅')" href="#">Lu₂Fe₃Si₅ 表面临界磁场     

Dy3Al5O12磁热性质研究

用量子理论计算了Dy₃Al₅O₁₂的晶场能谱、Zeeman劈裂能级和波函数. 在外磁场H_e为0<H_e<9 T, 温度为3<T<42 K 范围内, 计算了该晶体的磁矩、磁熵变, 计算结果与相关实验数据吻合较好. 该计算结果表明, Dy₃Al₅O₁₂内磁性离子间的交换作用非常微弱, 可以忽略. 从理论上给出了绝热退磁过程中温度变化ΔT与T的关系, 并与Gd₃Ga₅O₁₂晶体进行了比较, 发现不同外磁场下, Dy₃Al₅O₁₂和Gd₃Ga₅O₁₂的低温制冷性能在不同温区有差别. 在进行低温(T<10 K)制冷时, 若外磁场较低, 选择Dy₃Al₅O₁₂作为磁制冷材料较好; 若外磁场较高, 选择Gd₃Ga₅O₁₂作为磁制冷材料较好.     

PrNi$lt;sub$gt;2$lt;/sub$gt;的磁和磁热性能研究

在一些磁性材料内, 磁性离子间交换作用和磁性离子的自旋涨落对材料磁性有影响. 本文根据磁比热实验值确定了晶场参数后, 利用包含自旋涨落的交换作用有效场H_m= n₀ (1 + γ T + β e^{ω T})M, 计算了PrNi₂晶体晶场能级的Zeeman劈裂. 在温度为3.8 K ≤T≤ 30 K范围内, 计算了该晶体多晶磁矩随外磁场的变化, 以及外磁场H=5000 Oe时磁化率倒数随温度的变化, 计算结果和实验值符合较好. 当外磁场在0–50000 Oe时, 计算的该晶体的磁熵变与已有文献的理论结果相似. 计算结果说明, 提出的包含自旋涨落的交换作用有效场不仅适合亚铁磁性晶体, 而且也适合顺磁性晶体. 关键词： 2')" href="#">PrNi₂ 磁比热 交换作用有效场 磁矩 磁熵变     

磁性隧道结Ni80Fe20/Al2O3/Co的研究

用等离子体氧化形成中间绝缘层的方法可重复制备出具有隧道磁电阻（TMR)效应的Ni₈₀Fe₂₀/Al₂O₃/Co磁性隧道结.光透射谱等实验结果表明等离子体氧化能可控制地制备较致密的Al₂O₃绝缘层.样品的TMR比值在室温下最高可达6.0％,反转场可低于800A/m,相应的平台宽度约为2400A/m.结电阻R_j的变化范围从百欧到几百千欧,并且TMR比值随零磁场结偏压增大单调减小. 关键词：     

Rotational magnetization processes in exchange biased Ni81Fe19/Fe50Mn50 bilayers

The rotational magnetization process of an exchange coupled Ni₈₁Fe₁₉(10 nm)/Fe₅₀Mn₅₀(10 nm) bilayer was studied by Kerr microscopy. The domain processes in rotating magnetic fields near the exchange bias field H_eb are very sensitive to local variations of coupling strength and direction. A characteristic domain splitting was found that shows a remarkably different behavior for weaker and stronger coupled areas. While the magnetization in weaker coupled areas follows the rotating field for H≈H_eb, the stronger coupled areas switch back spring-like. As a result high-angle walls are formed between both areas causing rotational hysteresis.     

Antiferromagnetically coupled multilayers of (Co90Fe10 tF/Ru tRu)×N and (Ni81Fe19 tF/Ru tRu)×N prepared by ion beam deposition

This work describes multilayers of Co₉₀Fe₁₀ t_F/Ru t_Ru/Co₉₀Fe₁₀ t_F and Ni₈₁Fe₁₉ t_F/Ru t_Ru/Ni₈₁Fe₁₉ t_F (20 Åt_F200 Å) prepared at ambient temperature by ion beam deposition on Si/SiO₂ 3 kÅ substrates. The samples exhibited a maximum antiferromagnetic coupling with t_Ru=3.2 Å and M–H curves characterized by zero remanent magnetic moment and enhanced saturation field. Antiferromagnetic peaks were present with t_Ru17 and 30 Å.     

Influence of temperature on thermal relaxation of exchange bias field in CoFe/Cu/CoFe/IrMn spin valve

A multilayered spin valve film with a structure of Ta(5 nm)/Co_(75)Fe_(25)(5 nm)/Cu(2.5 nm)/Co_(75)Fe_(25)(5 nm)/Ir_(20)Mn_(80)(12 nm)/Ta(8 nm) is prepared by the high-vacuum direct current(DC) magnetron sputtering. The effect of temperature on the spin valve structure and the magnetic properties are studied by x-ray diffraction(XRD), atomic force microscopy(AFM), and vibrating sample magnetometry. The effect of temperature on the exchange bias field thermomagnetic properties of multilayered spin valve is studied by the residence time of samples in a reverse saturation field. The results show that as the temperature increases, the Ir Mn(111) texture weakens, surface/interface roughness increases, and the exchange bias field decreases. Below 200℃, the exchange bias field decreases with the residence time increasing, and at the beginning of the negative saturation field, the exchange bias field Hex decreases first quickly and then slowly gradually. When the temperature is greater than 200℃, the exchange bias field is unchanged with the residence time increasing.     

Coercivity analysis in R17Fe83−χBχ magnets

We studied the coercivity in magnets of composition R₁₇Fe_83−χB_χ (R = Nd, Pr and χ = 8, 30), using measurements of the coercive field H_c, its angular dependence, and the magnetic viscosity coefficient S_v, for temperatures between 4.2 and 500 K. The results are discussed in relation to a model which does not specifically consider the detailed mechanisms involved in magnetization reversal, but which provides information about the magnetic properties in the activation volume v where magnetization reversal is initiated. It is concluded that the ordering temperature in v tends to be slightly smaller than in the bulk and that the room temperature anisotropy in v is not strongly reduced with respect to the bulk value. Finally, a direct evaluation of the dipolar interactions is in good agreement with results obtained from H_c(T).     

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

The anisotropic magnetoresistance (AMR) in permalloy Ni₈₁Fe₁₉ film deposited on a 1.2 nm Co₃₃Cr₆₇ buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni₈₁Fe₁₉ film with and without Co₃₃Cr₆₇ buffer layer. It was found that Co₃₃Cr₆₇ buffer layer can induce good (1 1 1) texture, while without Co₃₃Cr₆₇ buffer layer, Ni₈₁Fe₁₉ film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni₈₁Fe₁₉ film due to the formation of the large (1 1 1) textured grains in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer, limit the enhancement of the AMR effect.     

Critical behavior of transverse and longitudinal ac susceptibilities in a random anisotropy magnet a-Dy16Fe84

We have investigated critical lines in the H-T plane in a random anisotropy magnet (RAM) a-Dy₁₆Fe₈₄ with a small effective ratio of the anisotropy (D) to the exchange constant (J) by means of ac susceptibility (χ) in static fields H parallel and perpendicular to the ac field. We found that the transverse χ exhibits an anomaly along the irreversible line H(T_f) determined by previous magnetization measurements, while the longitudinal χ does so along a characteristic line H(T_i) in a lower temperature region. Above H(T_f) we also found an extra characteristic line H(T_c). The lines were almost independent of the measured frequency. Both the present results and previous magnetization results suggest that an equilibrium phase transition occurs, and the critical lines analogous to those in Heisenberg spin glasses are present in a weak RAM.     

Structural, magnetic and transport properties of NiFeχAg(1−χ) heterogeneous alloys

We carried out a comprehensive study of structural, magnetic and electrotransport properties of as-deposited and annealed (Ni₈₀Fe₂₀)_χAg(_1−χ) heterogenous alloys prepared by sputtering. The NiFe atomic concentration was varied between 15% and 40%. These alloys consist of small magnetic particles (Ni₈₀Fe₂₀) embedded in a nonmagnetic matrix (Ag). The structures of these alloys were investigated by X-ray diffraction, scanning electron microscopy and high-resolution cross-section transmission electron microscopy. The magnetic measurements were made using SQUID magnetometry and ferromagnetic resonance. Magnetoresistance was measured with a conventional four-point probe between 1.5 K and room temperature in field range 0–6T. Three contributions to the magnetoresistance of these granular alloys have been clearly identified: the spin-valve (or giant) magnetoresistance as in multilayers, scattering on magnetic fluctuations (as in any ferromagnetic metal around its magnetic ordering temperature), and anisotropic magnetoresistance. These three contributions have their own dependences on the size of the magnetic particles, on the degree of intermixing between Ni₈₀Fe₂₀ and Ag, and on temperature. We discuss the different shapes and amplitudes of magnetoresistance versus Ni₈₀Fe₂₀ concentration or temperature and their evolution upon annealing in terms of the relative roles of these three contributions. The magnetoresistance in multilayers (current in-plane or perpendicular to the plane) and granular alloys are also compared.     

Hard magnetic CoCr layer in ferromagnetic tunnel junctions

In magnetic tunnel junctions a highly spin-polarizing layer is usually exchange biased by an antiferromagnetic layer, an artificial antiferromagnetic layer system or a combination of both, while the magnetically soft layer is free to rotate. The use of a single layer of a hard magnetic material is rarely investigated up to now. In this paper, we present the electric and magnetic properties of tunnel junctions with a hard magnetic Co₈₃Cr₁₇ layer. The soft magnetic electrode consists of either a single Co layer or a Co/Ni₈₀Fe₂₀ bilayer. The magnetic anisotropy and coercive field H_C of the CoCr layer depend on its thickness and the kind of the bottom layer (Cu or Ta) and can vary from H_C=50–700 Oe. It is found that a thin Co cap layer also influences the hysteretic behavior. Furthermore, only small changes after annealing up to 450°C promise a high thermal stability for the application in magnetic tunnel junctions. Measurements of the tunnel magnetoresistance on large area junctions, however, show a strong magnetic coupling of the hard and soft electrodes.     

Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响

本文通过在新固相源中添加Ni₂O₃的方法, 采用顶部籽晶熔渗生长工艺(TSIG)制备出组分为(1-x) (Gd₂O₃+1.2BaCuO₂)+x Ni₂O₃、直径为20 mm的单畴GdBCO 超导块材(其中x = 0, 0.02, 0.06, 0.10, 0.14, 0.18, 0.30, 0.50 wt%), 并研究了Ni₂O₃的掺杂量x对样品的表面生长形貌、微观结构、临界温度T_c、磁悬浮力以及俘获磁通密度的影响. 研究结果表明, 当Ni₂O₃的掺杂量x在0–0.50 wt%的范围内时, 均可制备出单畴性良好的样品, 且Ni₂O₃的掺杂对样品中Gd211粒子的分布和粒径没有明显的影响. 在Ni₂O₃的掺杂量x从0增加到0.50 wt%的过程中, 样品的临界温度T_c呈现下降的趋势, 从x=0时的92.5 K下降到x=0.50 wt%时的86.5 K, 这是由于Ni^{3 +}替代GdBCO晶体中Cu^{2 +}所致; 样品磁悬浮力和俘获磁通密度均呈现先增大后减小的变化规律, x=0.14 wt%时, 磁悬浮力达到最大值34.2 N, x=0.10 wt%时, 俘获磁通密度达到最大值0.354 T. 样品磁悬浮力和俘获磁通密度的变化规律与Ni₂O₃的掺杂量x有密切关系, 只有当掺杂量x合适时, Ni³⁺对Cu^{2 +}的替代既不会造成T_c的明显下降, 但又能产生适量的Ni^{3 +}/Cu²⁺ 晶格畸变, 从而达到提高样品磁通钉扎能力和超导性能的效果.