Atomic force microscopy investigation of surface roughness generated between SiO2 micro-pits in CHF3/Ar plasma

The present paper investigates the surface roughness generated by reactive ion etching (RIE) on the location between silicon dioxide (SiO₂) micro-pits structures. The micro-pit pattern on polymethyl methacrylate (PMMA) mask was created by an electron beam lithography tool. By using PMMA as a polymer resist mask layer for pattern transfer in RIE process, the carbon (C) content in etching process is increased, which leads to decrease of F/C ratio and causes domination of polymerization reactions. This leads to high surface roughness via self-organized nanostructure features generated on SiO₂ surface which was analyzed using atomic force microscopy (AFM) technique. The etching chemistry of CHF₃ plasma on PMMA masking layer and SiO₂ is analyzed to explain the polymerization. The surface root-mean-square (RMS) roughness below 1 nm was achieved by decreasing the RF power to 150 W and process pressure lower than 10 mTorr.     

VO2薄膜表面氧缺陷的修复:F4TCNQ分子吸附反应

VO₂表面氧缺陷的存在对VO₂材料具有显著的电子掺杂效应, 极大地影响材料的本征电子结构和相变性质. 通过2, 3, 5, 6-四氟-7, 7', 8, 8'-四氰二甲基对苯醌(F₄TCNQ)分子表面吸附反应, 可以有效消除表面氧缺陷及其电子掺杂效应. 利用同步辐射光电子能谱和X射线吸收谱原位研究了修复过程中电子结构的变化以及界面的化学反应, 发现这种方式使得VO₂薄膜样品氩刻后得到的V³⁺失去电子成功地被氧化成原先的V⁴⁺, 同时F₄TCNQ分子吸附引起电子由衬底向分子层转移, 界面形成带负电荷的分子离子物种. 受电化学性质的制约, F₄TCNQ分子吸附反应修复氧缺陷较氧气氛退火更安全有效, 不会引起表面过度氧化形成V₂O₅.     

Structural investigation of n-hexadecanoic acid multilayers on mica surface: Atomic force microscopy study

The structure of n-hexadecanoic acid (HA) multilayers formed by spreading an ethanol solution containing this molecule onto a freshly cleaved mica surface has been studied by atomic force microscopy (AFM). AFM images of multilayers obtained with different coating time showed that HA molecules first formed some sporadic domains on mica surface. With the proceeding of the coating process, these domains gradually enlarged and coalesced, until formed a continuous film finally. It was observed that HA molecules were always adsorbed on mica surface with tilted even-numbered layers structure. The height of the repeated tilted bilayer film was measured to be approximately 3.8 ± 0.2 nm, which implied a ∼60° tilt molecular conformation of the HA bilayers on mica surface. Phase image confirmed that the HA multilayers terminated with the hydrophilic carboxylic acid groups. The formation mechanism of the HA multilayers was discussed in detail. Thus, resulted hydrophilic surfaces are of special interest for further study in biological or man-made member systems.     

SiO2胶体晶体自组装技术

介绍了垂直沉降法和旋涂法制备SiO2胶体晶体,并对两种方法制备的胶体晶体在宏观形貌、微观结构及光子带隙性质进行了比较。采用改进的Stober法在乙醇介质中合成粒径不同、单分散性较好的SiO2微球,用垂直沉积法和旋涂法制备出有序性较好的密排结构的SiO2胶体晶体。宏观照片表明,用旋涂法制备的SiO2胶体晶体经白光照射出现的光柱呈6次对称,而垂直沉降法制备的胶体晶体表面出现条纹。SEM分析表明,选用不同溶剂在同等旋涂工艺下制备SiO2胶体晶体,用乙醇和乙二醇混合溶液作溶剂制备出的SiO2胶体晶体质量最好。透射光谱表明,垂直沉降法所制备的胶体晶体在(111)方向具有明显的光子带隙性质,而旋涂法制备的胶体晶体则不明显。     

TiO2和SiO2薄膜应力的产生机理及实验探索

对最常用的TiO₂和SiO₂薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型，对TiO₂和SiO₂单层膜和多层膜进行了实验测试，得到了一些有价值的结果，特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素，低聚集密度产生张应力，而高聚集密度产生压应力.在多层膜中通过调节工艺参数，适当地控制张应力或压应力，可使累积应力趋向于零. 关键词： 薄膜应力 离子辅助淀积 聚集密度     

XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films

Two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO₂/SiO₂ and SiO₂/ZrO₂ films. To explain the difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films, porous ratio and surface morphology of monolayer SiO₂ and ZrO₂ films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO₂/SiO₂ films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO₂/ZrO₂ films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO₂ layer had diffused through the entire SiO₂ layer. The difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films was influenced by the microstructure of SiO₂ and ZrO₂.     

光学玻璃基底原子层同质材料沉积薄膜光谱及激光诱导损伤特性研究

通过原子层沉积技术在熔石英玻璃表面制备了同质材料的单层SiO2薄膜,对光学薄膜的物理化学性质和强激光辐照下的激光诱导损伤性能进行了深入研究.实验中采用双叔丁基氨基硅烷(BTBAS)和臭氧(O3)作为反应前驱体,在熔石英光学元件表面进行了SiO2薄膜的原子层沉积工艺研究,以不同沉积温度条件制备了一系列膜样品.首先对原子层...     

浓悬浮液中纳米SiO_2团聚体的渗透率

本文基于悬浮液中渗透性颗粒的短时扩散动力学理论,采用低相干光纤动态光散射方法,测量了相同粒径的纳米SiO_2团聚体在不同体积分数时的扩散系数,利用扩散系数随渗透率的变化关系得到纳米SiO_2团聚体的渗透率.结果表明:恒温条件下,具有一定渗透率的团聚体颗粒扩散得比硬球颗粒快.实验测量得到的团聚体渗透率与采用photoshop CS6对团聚体SEM图像进行处理计算得到的渗透率符合较好.     

Morphology of synthetic DOPA-eumelanin deposited on glass and mica substrates: An atomic force microscopy investigation

Bright field microscopy and atomic force microscopy techniques are used to investigate morphological properties of synthetic eumelanin, obtained by oxidation of l-DOPA solution, deposited on glass and mica substrates. Deposits of eumelanin are characterized by aggregates with different shape and size. On a micrometric scale, filamentous as well as granular structures are present on glass and mica substrates, with a larger density on the former than on the latter. On a nanometric scale, filamentous aggregates, several microns long and about 100 nm wide and high, and granular aggregates, ∼50 nm high and 100 nm wide, are found on both substrates, whereas point-like deposits less than 10 nm high and less than 50 nm wide are found on mica substrate. Dynamic light scattering measurements and atomic force microscopy images support the evidence that eumelanin presents only nanometric point-like aggregates in aqueous solution, whereas such nanoaggregates organize themselves according to granular and filamentous structures when deposition occurs, as a consequence of interactions with the substrate surface.     

Composite SiO2/TiO2 and amine polymer/TiO2 nanoparticles produced using plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition was used to conformally coat commercial TiO₂ nanoparticles to create nanocomposite materials. Hexamethyldisiloxane (HMDSO)/O₂ plasmas were used to deposit SiO₂ or SiO_xC_yH_z films, depending on the oxidant concentration; and hexylamine (HexAm) plasmas were used to deposit amorphous amine-containing polymeric films on the TiO₂ nanoparticles. The composite materials were analyzed using Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). These analyses reveal film composition on the nanoparticles was virtually identical to that deposited on flat substrates and that the films deposit a conformal coating on the nanoparticles. The performance of the nanocomposite materials was evaluated using UV-vis spectroscopy to determine the dispersion characteristics of both SiO_x and HexAm coated TiO₂ materials. Notably, the coated materials stay suspended longer in distilled water than the uncoated materials for all deposited films.     

Study on high-temperature spectra of asymptotic asymmetric-top radical SiO2

Total internal partition sums are calculated in the product approximation at temperatures up to 6000 K for the asymptotic asymmetric-top SiO2 molecule.The rotational partition function and the vibrational partition function are calculated with the rigid-top model and in the harmonic oscillator approximation,respectively.Our values of the total internal partition sums are consistent with the calculated value in the Gaussian program within 0.137% at 296 K.Using the calculated partition functions and the rotationless transition dipole moment squared as a constant,we calculate the line intensities of 001-000 band of SiO2 at normal,medium and high temperatures.Simulated spectra of the 001-000 band of the asymptotic asymmetric-top SiO2 molecule at 2000,5000 and 6000 K are also obtained.     

SiO2薄膜的液相沉积及特性

将基片浸入到低温SiO₂过饱和的六氟硅酸(H₂SiF₆)溶液中,在其表面上沉积SiO₂薄膜。这种新的生长工艺称之为液相沉积(LPD)。本文着重介绍LPD工艺及LPD SiO₂薄膜的特性。     

Electroluminescence from Si／SiO2 films deposited on p—Si substrates

The structure of Au/Si/SiO₂/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO₂/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO₂ films and of the input electrical power on EL spectra are studied systematically.     

Nanostructured porous SiO2 films for antireflection coatings

Thin films with a low refractive index play an important role in optics, optoelectronics, and microelectronics. In this study, we present nanostructured porous SiO₂ films fabricated by using a glancing angle deposition technique. These nanostructured porous SiO₂ films deposited at an angle of 85° show very low refractive indices of 1.08 at 633 nm. As an application, a four-layer antireflection coating for visible wavelength is designed and fabricated using SiO₂ material only. The normal incidence reflectance of the antireflection coating averaged between 400 and 800 nm is about 0.04%. The microstructure and the surface morphology are also investigated by using a scanning electron microscope.     

Influence of remaining C on hardness and emissivity of SiC/SiO2 nanocomposite coating

SiC/SiO₂ nanocomposite coating was deposited by electron beam-physical vapor deposition (EB-PVD) through depositing SiC target on pre-oxidized 316 stainless steel (SS) substrate. High melting point component C remained and covered on the surface of ingot after evaporation. When SiC ingot was reused, remaining C had an effect on the composition, hardness and emissivity of SiC/SiO₂ nanocomposite coating. The composition of ingot and coating was studied by X-ray photoelectron spectroscopy (XPS). The influence of remaining C on hardness and spectral normal emissivity of SiC/SiO₂ nanocomposite coating was investigated by nanoindentation and Fourier transform infrared spectrum (FTIR), respectively. The results show that remaining C has a large effect on hardness and a minor effect on spectral normal emissivity of SiC/SiO₂ nanocomposite coating.     

Observing the effect of water vapor on post-irradiated surface morphology of SiO2 and Si3N4 insulators by atomic force microscopy

In this work, we investigated the effect of water-vapor treatment on the surface morphology of SiO₂ and Si₃N₄ insulators before and after Co⁶⁰ gamma-ray irradiation by using the atomic force microscopy (AFM) operated under non-contact mode. Before irradiation, no apparent surface morphology change was found in SiO₂ samples even they were water vapor treated. However, bright spots were found on post-irradiated water-vapor-treated SiO₂ sample surfaces but not on those without water-vapor treatment. We attributed the bright spots to the negative charge accumulation in the oxide due to charge balancing between hydroxyl (OH⁻) ions adsorbed on SiO₂ surface and electron-hole pairs (ehps) generated during irradiation since they can be annealed out after low temperature annealing process. On the contrary, no bright spots were observed on post-irradiated Si₃N₄ samples with and without water-vapor treatment. This result confirms that Si₃N₄ is a better water-resist passivation layer than SiO₂ layer.     

Deposition and characterization of YBCO/CeO2/YSZ/CeO2 multilayers on biaxially textured Ni substrates

CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

Esca investigations of some NiO/SiO2 and NiO—Al2 O3 /SiO2 catalysts

The ESCA spectra of a series of NiO/SiO₂ and NiO—Al₂ O₃/SiO₂ catalysts are reported, together with those of some reference compounds. The positions and shapes of the lines, in conjunction with a quantitative surface analysis from relative intensities, allow the identification of different surface phases, e.g. an NiO-like phase in the impregnated catalysts with very low catalytic activity and an Ni talc-like phase in the precipitated catalysts which have higher activity. The addition of Al₂O₃ has a great influence on the surface structure (formation of alumosilicate).     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.