Preparation of chemically deposited thin films of CdS/PbS solar cell

The present paper reports the preparation of a solar cell which has a cross-sectional scheme: ITO/CdS/PbS, containing a commercially transparent conductive ITO; chemically deposited n-type CdS (340 nm) and absorbed layer of p-type PbS (1400 nm). The structural and optical properties of the constituent films are presented. X-ray diffraction showed that all of the thin films are polycrystalline. Using scanning electron microscopy, the present study revealed that the films have uniform surface morphology over the substrate. The solar cell was characterized by determining the open circuit voltage, short-circuit current density, and J–V under 40 mW/cm² solar radiation. The efficiency of the solar cells was 1.35%, which is much higher (0.041, 0.5 and 0.1–0.4%) and slightly smaller (1.65%) than some solar cells reported in the literature.     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

Simplistic surface active agents mediated morphological tweaking of CdS thin films for photoelectrochemical solar cell performance

This study reports on the formation of cadmium sulfide (CdS) nanostructures with controlled morphology synthesized via a simple chemical route in surface active agent environment. The effect of organic surface active agents (surfactants) as sodium dodecyl sulfate (SDS), polyethylene glycol (PEG) and cetyltrimethylammonium bromide (CTAB) on structural, morphological, optical and photoelectrochemical properties of CdS thin films have been studied. Our results reveal that the organic surfactants play key roles in tweaking the surface morphology. A compact spongy ball like morphology was observed for the CdS samples grown without organic surfactants. The cauliflower's with nanopetals from the CTAB, whereas crowded star fish like morphology is observed in PEG-mediated growth. Water hyacinth like morphology is tweaked using SDS. Considering the importance of these nanostructures, the growth mechanism has been discussed in details. Additionally, the samples are photoelectrochemically (PEC) active and having a compact surface with a nanoporous structure twig helps in improved photoelectrochemical performance compared to that of CdS deposits from surfactant free solution. This is a simplistic way to tune the morphology using surfactants, which can be applied to other energy conversion applications.     

Characterization of gallium-doped CdS thin films grown by chemical bath deposition

Ga-doped CdS thin films, with different [Ga]/[Cd] ratios, were grown using chemical bath deposition. The effect of Ga-doping on optical properties and bandgap of CdS films is investigated. Resistivity, carrier density, and mobility of doped films were acquired using Hall effect measurements. Crystal structure as well as crystal quality and phase transition were determined using X-ray diffraction (XRD) and Micro-Raman spectroscopy. Film morphology was studied using scanning electron microscopy, while film chemistry and binding states were studied using X-ray photoelectron spectroscopy (XPS). A minimum bandgap of 2.26 eV was obtained at [Ga]/[Cd] ratio of 1.7 × 10⁻². XRD studies showed Ga³⁺ ions entering the lattice substitutionally at low concentration, and interstitially at high concentration. Phase transition, due to annealing, as well as induced lattice defects, due to doping, were detected by Micro-Raman spectroscopy. The highest carrier density and lowest resistivity were obtained at [Ga]/[Cd] ratio of 3.4 × 10⁻². XPS measurements detect an increase in sulfur deficiency in doped films.     

Ammonia-free method for synthesis of CdS nanocrystalline thin films through chemical bath deposition technique

The preparation of thin films of CdS by chemical bath deposition is mostly based on the utilisation of ammonia as a complexing agent for cadmium ions. Here we report on a technique based on sodium citrate dihydrate that eliminates the problems of ammonia volatility and toxicity. The crystallites with a size range of 10–20 nm in diameter with zinc blend (cubic) and wurtzite (hexagonal) crystal structures and strong photoluminescence were prepared from the mixture solutions of: cadmium chloride dihydrate as a cadmium source, thiourea as a sulfur source and sodium citrate dihydrate as a complexing agent for cadmium ions. The well-cleaned glass used as a substrate for thin film deposition. The obtained samples were characterized by the techniques such as transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscope (AFM) and fluorescence spectroscopy. Also, the effect of two operating conditions, (i) pH, and (ii) the temperature of reaction on the synthesizing of CdS nanocrystals was examined. Finally, it was found that the CdS nanocrystals showed sharp excitation features and strong ”band-edge” emission.     

Optical and dielectric properties of PVA capped nanocrystalline PbS thin films synthesized by chemical bath deposition

Nanoparticles of lead sulfide (PbS) have been grown within the pores of polyvinyl alcohol (PVA) matrix on glass substrates by chemical bath deposition at and below room temperature (30 °C). Lead acetate and thiourea, dissolved in an alkaline medium, were taken as the sources of lead and sulfur. X-ray diffraction and selected area electron diffraction studies confirmed the cubic nanocrystalline PbS phase formation. Transmission electron micrograph of the films revealed the particle size lying in the range 10–20 nm. X-ray photoelectron spectroscopic studies confirmed the presence of lead and sulfur in the films, and their atomic ratios were found to be dependent on the deposition temperature. UV–vis spectrophotometric measurement showed a direct allowed band gap lying in the range 2.40–2.81 eV, which is much higher than the bulk value (0.41 eV). The band gap decreases with the increase of deposition temperature. The dielectric constant of the PVA-capped nanocrystalline PbS was in the range 155–265 at higher frequencies, which is much higher compared to only PVA and bulk PbS.     

Impedance spectroscopy studies on chemically deposited CdS and PbS polycrystalline films

Room temperature impedance spectroscopy measurements on chemically deposited CdS and PbS films were performed using the ‘sandwich’ geometry. The experimental data for both materials represented by the complex plane diagrams showed two well-defined semicircles. The results were analyzed in terms of the ‘brick-layer’ model, appropriate for polycrystalline materials in which the crystallites and its boundary are well developed. According to this model, the equivalent circuit which best represent the polycrystalline films, consists of two RC circuits connected in series, one representing the grain and the other the grain boundaries. By fitting the spectral response of the equivalent circuit to the impedance measurements, electrical and structural parameters were obtained.     

Preparation and characterization of ZnS/CdS bi-layer for CdTe solar cell application

In this work, bilayer ZnS/CdS film was prepared as an improved window layer of CdTe solar cell. TEM was used to observe the cross section of the bilayer structure. The total thickness of ZnS/CdS film was about 60 nm, which could allow more photons to pass through it and contribute to the photocurrent. Optical properties of the bilayers were investigated using UV–vis spectroscopy. Compared with poor transmission of standard CdS film in the short wavelength range of 350–550 nm, the transmission of ZnS/CdS was improved and reached above 50%. The ZnS/CdS was annealed with CdCl₂. X-ray photoelectron spectroscopy (XPS) was used to investigate its chemical properties. A possible diffusion between CdS and ZnS was observed after annealing. The efficiency of standard CdS/CdTe solar cell was 9.53%. The device based on ZnS/CdS window layer had a poor 6% efficiency. With annealing treatment on ZnS/CdS layer, the performance was improved and reached 10.3%. In addition, the homogeneity of solar cell performance was improved using ZnS/CdS window layer. A thin ZnS layer was quite effective to reduce the possible shunt paths and short parts of window layer and consequently contributed to fabrication of a homogeneous CdTe solar cell.     

Influence of deposition parameters on the structural and optical properties of CdS thin films obtained by micro-controlled SILAR deposition

Polycrystalline CdS films were obtained by a micro-controlled SILAR deposition technique, using aqueous solutions of cadmium acetate and thiourea as precursors. The structural and optical properties of the films were found to be influenced by various deposition parameters such as number of immersion cycles, concentration of the precursors and temperature of the solutions. Contrary to the observations made by some researchers, we found that the thickness of the films increased continuously with number of immersion cycles and also with concentration of the precursor solutions. We also found that the films covered the substrates uniformly, without any voids, unlike the films obtained by others. Effect of deposition parameters on thickness, substrate coverage, grain size, chemical composition, optical band gap and other properties of the films is discussed in detail.     

Electrochemical deposition and characterization of cadmium indium telluride thin films for photovoltaic application

Cd–In–Te films were electro-deposited potentiostatically over SnO₂:F coated glass substrates from aqueous acidic solutions containing CdSO₄, InCl₃ and TeO₂ at 85 °C. Cyclic voltammetric studies were carried out to study the growth process and the potential range for ternary Cd–In–Te thin film deposition. Crystalline structure and surface morphological studies were carried out and correlated with the deposition potential. The deposited film showed cubic structure having a high degree of (1 1 1) orientation. Optical transmission studies showed a direct band structure and the band gap of the deposited film change with the deposition potential. A typical decrease from 1.2 to 1.1 eV in the optical band gap was observed on increasing the cathodic deposition potential from −0.5 to −0.54 V (SCE).     

Structural and optical properties of CdS thin films

CdS thin films are deposited onto glass substrates by vacuum evaporation at 373 K and the films are annealed at different temperatures. Rutherford backscattering spectrometry (RBS) and X-ray diffraction techniques are used to determine the thickness, composition, crystalline structure and grain size of the films. The films show a predominant hexagonal phase with small crystallites. The optical band gap of the films are estimated using the optical transmittance measurements. A decrease in the band gap is observed for the annealed films. The Raman peak position of the CdS A₁ (LO) mode did not change much whereas, the full width at half maximum (FWHM) is found to decrease with annealing.     

Electron microscopic study of thin CdS films

The results obtained by investigating the surface morphology and optical properties of thin CdS films formed on transparent glass and glass/indium-tin oxide (ITO) substrates via the chemical and electro-chemical methods are presented. Thin cadmium sulfide films are employed as optical windows in thin-film polycrystalline solar cells. Closely packed cadmium sulfide nanoparticles are observed on the conducting oxide (ITO) surface by means of atomic-force microscopy. Large particles (150–300 nm) comprise smaller particles with sizes of 20–30 nm. Thin CdS layers are characterized by a relatively high level of transmission (～60%) in the long-wavelength spectral region (520–600 nm).     

Nonlinear and saturable absorption properties of PbS nanocrystalline thin films

The structural, morphological, optical, and nonlinear optical properties of a lead sulfide （PbS） thin film grown by chemical bath deposition （CBD） are investigated by X-ray diffraction （XRD）, scanning electron microscope （SEM）, ultraviolet-visible （UV-Vis）, and open aperture Z-scan experiments. The band gap energy of the PbS nanocrystalline film is 1.82 eV~ higher than that of bulk PbS at 300 K. The nonlinear absorption properties of the film are investigated using the open aperture Z-scan technique at 1064 nm and pulse durations of 4 ns and 65 ps. Intensity-dependent switching of the film from nonlinear absorption to saturable absorption is observed. The nonlinear absorption coefficient increases monotonically with increasing pulse duration from 65 ps to 4 ns.     

Optical gate realization with thin CdS films

A spray deposited thin (6 m) CdS film laser induced optical device (LIOD) was studied experimentally and theoretically. The all optical bistable (all-OB) and the hybrid bistable (HB) features at 210 K were investigated. It is shown for the first time that the observation of equal contrasted all-OB and HB loops is possible in thin CdS films. The slope of the all-OB loops were calculated with a new theoretical model which is established on the thermal enhanced shift of the absorption edge and the transmitted light equilibrium condition. A good agreement with the experiments is found. Furthermore, it is pointed out that the electron life time determines the fashion and the contrast of the HB loops. In this context the proof is furnished that the maximal possible HB loops is observed. Finally, the influence of Joule's heat on OB and HB is demonstrated.     

Microstructure characterization of titanium dioxide nanodispersions and thin films for dye-sensitized solar cell devices

This article reports on the microstructure characterization of titanium dioxide nanodispersions and thin films made thereof for dye-sensitized solar cell devices. Structure–property relationships have been investigated mainly using electron microscopy to assess how microstructure (crystalline structure, defects) and morphological (e.g. heterogeneities, inclusions, voids) features in the electron transport element of the solar cell device correlate with electrical performance, namely, short-circuit photocurrent density (J_sc). This work shows that for a nanodispersion synthesized in the laboratory different electrical performances are measurable depending on the thin film forming process, more specifically, heat-sintering at 450 °C or pressure-sintering at 500 bar. For the heat-sintered device J_sc is about 7.3 mA/cm² whereas for the pressure-sintered one this value is much lower, this difference being attributed to the existence of inclusions in the titanium dioxide matrix, which are spatially isolated from the rest of the electron transport element thereby limiting the charge transport process by promoting their premature recombination. PACS 68.37.Lp; 73.61.Le; 81.40.-z; 84.60.Jt     

Research on the optimum hydrogenated silicon thin films for application in solar cells

Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170℃. The electrical, structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current--voltage (I-V) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.     

Surface photovoltage spectroscopy study of CdS thin films

The method of surface photovoltage spectroscopy has been applied to the study of the surface properties of thin CdS films deposited by vacuum evaporation. The energy spectrum of the surface states is obtained and their kinetic parameters are calculated. A comparison is made of the results obtained in air and in vacuum for non-recrystallized and recrystallized samples. The results for thin films are compared with the data on monocrystal CdS in the literature. It is assumed that the surface states established in the films are of a donor-like type.