Nd:YAG split-disk laser amplifier for 10 J output energy

A prototype split-disk amplifier consisted of four Nd:YAG ceramics and single crystals was demonstrated with a 3.7 cm square clear aperture. A single-pass small-signal gain of 2.0 and a total stored energy of 11.1 J in the eight YAG disks were obtained. The maximum output energy of 10.4 J with the YAG disk amplifier was achieved in a single-shot operation. A near-field pattern of 31 mm × 31 mm square with super Gaussian shape was measured.     

Absolute frequency measurements and comparisons in iodine at 735 nm and 772 nm

We report frequency measurements at the rovibronic transition P(42)1-14 (772 nm) and R(114)2-11 (735 nm) from the electronic transition of the iodine molecule ¹²⁷I₂ with the help of a frequency comb as a reference. By using Doppler-free saturation spectroscopy a frequency precision in the 7 × 10⁻¹⁰ region is reached and two iodine cells both operated at 550-600 °C are compared. To relate our results to other measurements, the absolute transition frequency of the hyperfine structure line P(148)1-14 a₁ at 780 nm with an already known transition frequency was also determined.     

High energy and short pulses generation by Nd:yttrium aluminum garnet laser mode-locked using frequency-doubling nonlinear mirror

The generation of laser pulses with energies of >40 mJ at 25 Hz and durations variable from 15 ps to 45 ps using an Nd:yttrium aluminum garnet laser mode-locked with a Stankov nonlinear mirror is demonstrated. This laser is used to pump an optical parametric generator-amplifier, which is tunable in the visible spectral range.     

Temperature dependent low energy electron microscopy study of Ge growth on Si(1 1 3)

We investigated the initial Ge nucleation and Ge island growth on a Si(1 1 3) surface using low energy electron microscopy and low energy electron diffraction. The sample temperature was varied systematically between 380 °C and 590 °C. In this range, a strong temperature dependence of the island shape is observed. With increasing temperature the Ge islands are elongated in the direction. Simultaneously, the average island size increases while their density decreases. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced.     

High-beam-quality, 5.1 J, 108 Hz diode-pumped Nd:YAG rod oscillator-amplifier laser system

A high efficiency, high beam quality diode-pumped Nd:YAG master oscillator power-amplifier (MOPA) laser with six amplifier stages is demonstrated. The oscillator with two-rod birefringence compensation was designed as a thermally determined near hemispherical resonator, which presents a pulse energy of 223 mJ with a beam quality value of M² = 1.29 at a repetition rate of 108 Hz. The MOPA system delivers a pulse energy of 5.1 J with a pulse width of 230 μs, a M² factor of 3.6 and an optical-to-optical efficiency of 38.5%. To the best of our knowledge, this is the highest pulse energy for a diode-pumped Nd:YAG rod laser operation with a high beam quality and a pulse width of hundreds of microseconds at a repetition rate of over 100 Hz.     

High-flux high harmonic soft X-ray generation up to 10 kHz repetition rate

We report the operation of a Ti:sapphire oscillator-amplifier system with a high, variable repetition rate adjustable between 1 and 15 kHz. The oscillator uses cavity dumping and the multipass amplifier is based on a liquid nitrogen cooled crystal. The system produces pulses with 28 fs duration at 1.1 mJ pulse energy. When pumping the amplifier crystal with 72 W, an average output power of 11 W is obtained at a repetition rate of 10 kHz, resulting in a quantum efficiency of 25%. The output pulses are used to generate high harmonic radiation in argon, neon, and helium, which are detected up to a photon energy of 110 eV, limited by the sensitivity of the toroidal grating employed.     

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 80 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.     

Self-action of Bessel light beams in medium with large nonlinearity

The modifications of an angular spectrum of the intense Bessel J₀ and J₁ beams caused by self-action in the medium with large cubic nonlinearity are investigated. The appearance of an outer ring of triple radius was observed. The phenomenon can be explained as Bragg diffraction of Bessel beam on Bessel lattice in nonlinear medium. Experimental results are in qualitative agreement with the theoretical predictions.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Sum and difference frequency generation of white light continuum with the ps pulses of Nd:YAG laser in a thick BBO crystal

The white light continuum (WLC) generated in water/D₂O mixture by pumping with the fundamental of ps Nd⁺³:YAG laser has been used as a variable frequency source for the sum frequency generation as well as for its amplification. 35 ps long pulses with 8 mJ energy at 1064 nm were mixed collinearly with the WLC generated by the same laser beam in a 20 mm thick BBO crystal. The obtained tunable output has been identified as the sum frequency between the fundamental and a portion of the WLC with the required phase matching. Theoretical simulations are also given along with a few initial experiments to use this combination for the difference frequency generation (optical parametric amplification) under non-collinear geometry.     

Atomic and molecular spectroscopy with a continuous-wave, doubly resonant, monolithic optical parametric oscillator

Doppler-broadened atomic and molecular spectra were observed with a one octave tunable, continuous-wave, doubly resonant, monolithic optical parametric oscillator (OPO) using 5% MgO-doped LiNbO₃ as a non-linear crystal with a birefringent phase-matching configuration. By tuning the frequency of a pump laser, longitudinal mode selection over 20 successive modes, corresponding to a 60 GHz span, was possible, owing to the simple structure of the monolithic OPO. Continuous frequency tuning was achieved using an external waveguide-type electrooptic phase modulator (EOM). By changing the modulation frequency of the EOM, frequency tuning of the optical sidebands over 12 GHz was possible, which is larger than the one free spectral range of the monolithic cavity of 3 GHz. We could observe the Cs-D₁ (894 nm), Cs-D₂ (852 nm), Rb-D₁ (795 nm), acetylene R9 (1520 nm) and P9 (1530 nm) transitions with the single monolithic OPO.     

Half-metallicity characteristic at zincblende CrSb(0 0 1) surfaces and its interfaces with GaSb(0 0 1) and InAs(0 0 1)

Electronic and magnetic properties of the zincblende CrSb(0 0 1) surfaces and its interfaces with GaSb(0 0 1) and InAs(0 0 1) semiconductors are studied within the framework of the density-functional theory using the FPLAPW+lo approach. We found that the Cr-terminated surfaces retain the half-metallic character, while the half-metallicity is destroyed for the Sb-terminated surfaces due to surface states, which originate from p electrons. The phase diagram obtained through the ab-initio atomistic thermodynamics shows that at phase transition has occurred. Also the half-metallicity character is preserved at both CrSb/GaSb and CrSb/InAs interfaces. The conduction band minimum (CBM) of CrSb in the minority spin case lies about 0.63 eV above that of InAs, suggesting that the majority spin can be injected into InAs without being flipped to the conduction bands of the minority spin. On the other hand the CrSb/GaSb interface has a greater valence band offset (VBO) compared with the CrSb/InAs interface and the minority electrons have lower contribution in the injected currents and hence more efficient spin injection into the GaSb semiconductor. Thus the CrSb/GaSb and CrSb/InAs heterojunctions can be useful in the field of spintronics.     

Anti-ferromagnetic contrast in NiO (0 0 1) studied with threshold photoemission electron microscopy

 A detailed study is presented of the potential of threshold photoemission electron microscopy (PEEM) for the imaging of anti-ferromagnetic (AF) domains of NiO (0 0 1). Characteristic patterns with large asymmetry have been observed experimentally. Upon heating the sample to temperatures significantly above the Néel temperature, the patterns clearly remain visible and a magnetic origin can therefore be excluded. The patterns probably originate in polishing damage, with the bright areas corresponding to areas with a high oxygen deficiency (with enhanced electron emission). After sputter cleaning the sample, thereby removing the dominant patterns, no significant asymmetries in electron emission remain. Obviously, for our samples the AF asymmetries as measured with threshold PEEM are less than the detection limits of our setup of 0.5%. The conclusion is supported by model calculations, which show that the asymmetry should have a distinct angular dependence and which give an estimate of the maximum asymmetry of below 1%.     

Anisotropy in the nonlinear absorption of elongated silver nanoparticles in silica, probed by femtosecond pulses

We present measurements of the anisotropy of the nonlinear absorption of a silica matrix doped with aligned spheroidal silver nanoparticles, produced by a double ion-implantation process of silver nanoparticles followed by an irradiation with Si ions. The nonlinear response was studied using the z-scan technique with fs pulses at 530 nm, which lies very close to the surface-plasmon absorption peak of the sample. The observed saturable absorption is studied for different angles of the input linear polarization of the pulses, showing a strong anisotropy, which is consistent with the fact that the nanorods are aligned.     

1 W tunable near diffraction limited light from a broad area laser diode in an external cavity with a line width of 1.7 MHz

A novel unstable external cavity for a broad area laser diode is presented. The cavity is based on a V-shaped setup that improves the slow axis beam quality by coupling the internal modes of a gain guided laser diode. The novelty here is the compact unstable resonator design without lenses in direction of the slow axis. For frequency stabilisation and to narrow the line width of the laser diode emission a diffraction grating in a Littrow configuration is used. With this setup up to 1 W of near diffraction limited light with a beam quality of M² ? 1.3 and a line width of 1.7 MHz could be achieved. The external cavity laser was tunable over a range of 35 nm (FWHM) around the center wavelength of 976 nm.     

Comparative study of UV absorption changes induced in germanosilicate glass by high-intensity femtosecond pulses at 267, 400 and 800 nm

We investigated UV absorption changes induced in 3.5 mol% Ge-doped fused silica at high-intensity (∼10¹¹-10¹³ W/cm²) femtosecond (130 fs) irradiation at 267, 400 and 800 nm. We have shown that the induced spectra in the region 190-300 nm are similar in all three cases. At 800 nm irradiation, in addition to the UV absorption changes, we observed small-scale damage due to self-focusing. This damage appears when the incident pulse fluence value of about 1 J/cm² (pulse intensity of about 7.5 × 10¹² W/cm²) is overcome, while the threshold for the induced absorption changes is twice lower.     

Low-frequency noise and inelastic tunneling spectroscopy in Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) epitaxial magnetic tunnel junctions

We report on tunnelling magnetoresistance (TMR), current–voltage (IV) characteristics and low-frequency noise in epitaxially grown Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) magnetic tunnel junctions (MTJs) with dimensions from 2×2 to 20×20 μm². The evaluated MgO energy barrier (0.50±0.08 eV), the barrier width (13.1±0.5 Å) as well as the resistance times area product (7±1 MΩ μm²) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. At low temperatures (T<10 K) inelastic electron tunneling spectroscopy (IETS) shows anomalies related to phonons (symmetric structures below 100 meV) and asymmetric features above 200 meV. We explain the asymmetric features in IETS as due to generation of electron standing waves in one of the Fe electrodes. The noise power, though exhibiting a large variation, was observed to be roughly anti-correlated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behavior could be related to the influence of magnetostriction on the characteristics of the insulating barrier through changes in local barrier defects structure.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

Stable atomic structure and magnetism of Pt–Cr binary surface alloys on Pt(0 0 1): First-principle calculations

The possibility of Pt–Cr surface alloys formation on Pt(0 0 1) was investigated and their magnetism was calculated by the full-potential linearized augmented plane wave (FLAPW) method with eight different atomic configurations. The most stable structure was calculated to be the Pt-segregated L1₂ ferromagnetic surface alloy. A₃B types (L1₂ or D0₂₂) were more stable compared to AB types (L1₀). It implies that the A₃B type surface alloys may be formed when depositing a monolayer of Cr on Pt(0 0 1). It was found from the total energy calculations that there exists a strong tendency of the Pt segregation. The segregation further stabilizes the surface alloy significantly. The work function of the most stable surface alloy was calculated to be 6.02 eV and the magnetic moment of the surface Cr was much enhanced to 3.3 μ_B. It is a quite interesting finding that the coupling between Cr and Pt atoms on the surface plane is ferromagnetic in the Pt-segregated L1₂ ferromagnetic surface alloy, while the coupling is antiferromagnetic in the bulk.