X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD

GaN-based InGaN/GaN multiple quantum wells (MQWs) structure having a high-quality epilayer and coherent periodicity was grown by metalorganic chemical vapor deposition. After thermal annealing of InGaN/GaN MQWs, the increase in temperature and annealing time caused the intermixing between the barrier and the wells, which in turn caused a decrease in periodicity on the high-resolution X-ray diffraction patterns. Thereby, we confirmed that the structural performance of InGaN MQWs is successively degrading with increasing thermal annealing temperature. Especially, InGaN MQWs of the sample annealed at 950 °C were profoundly damaged. The cathodoluminescence (CL) measurement indicated that MQWs emission intensity decreases with increasing thermal annealing temperature. Thus, the integrated CL intensity ratio of InGaN MQWs to GaN dramatically decreased while thermal annealing temperatures increased. This result caused the intermixing in MQWs to deteriorate the active layer performance. Furthermore, the peak position of MQWs showed a tendency of the red shift after high thermal annealing. It is suggested that the annealing-induced red shift in MQWs is attributed to the reduction of the inhomogeneity of the In content in the MQWs leading to the reduction of the quantized energies. Consequently, it indicates that the high temperature and the long-time thermal annealing would be inevitably followed by the structural destruction of InGaN MQWs.     

The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

The impact of two technological parameters, i.e., the growth temperature and the interface growth interruption, on the crystal quality of strained InGaAs/GaAs quantum well (QW) structures was studied. The investigated heterostructures were grown by molecular beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) under As-rich conditions. Photoluminescence (PL), reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) were adopted for the evaluation of specified interfaces smoothness and the quality of layers. Comparison between both epitaxial techniques allowed us to find, that the growth temperature plays more significant role in the case of structures grown by MBE technique, whereas the quality of MOCVD grown structures is more sensitive to the growth interruption. Optimum values of the investigated parameters of QW crystallization were obtained for both growth techniques.     

The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD

The tri-methyl-Sb flow and the surfactant time dependence of photocurrent (PC) spectra was studied on InGaAsN/GaAs-strained multiple quantum wells (MQWs) structures grown by using metalorganic chemical vapor deposition (MOCVD). The structural properties of InGaAsN/GaAs-strained MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). In the case of InGaAsN/GaAs-strained MQWs, an increase in compressive strain from an analysis of the satellite peaks in HRXRD was observed on increasing the tri-methyl-Sb flow and the surfactant time. For InGaAsN/GaAs-strained MQWs, the peaks observed in the photocurrent spectra were preliminarily assigned to electron–heavy hole (e₁–hh) and electron–light hole (e₁–lh) fundamental excitonic transitions. Their peaks are red-shifted with increasing tri-methyl-Sb flow and surfactant time. But the photocurrent peak is blue-shifted at the surfactant time of . It seems to be due to the improvement of structure properties at interface owing to a surfactant-suppressing surface diffusion phenomenon during growth. We compared this with the result of the experimental energies for InGaAsN/GaAs-strained MQWs.     

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Fabrication of abrupt InGaP on GaAs (InGaP/GaAs) and GaAs on InGaP (GaAs/InGaP) hetero-interfaces has been difficult using metal organic vapor phase epitaxy (MOVPE) due to the exchange of P and As during the fabrication steps. Indium (In) surface segregation during InGaP growth also degrades the abruptness. Here, the MOVPE gas-switching sequence to fabricate atomically abrupt hetero-interfaces was optimized and the effects of this optimization on the hetero-interface abruptness were quantitatively evaluated using the Z-contrast method with scanning transmission electron microscopy (STEM). Results revealed that (a) in the fabrication of InGaP/GaAs hetero-interface, the GaAs top layer should be stabilized using As-source gas supply, and the excess As layer on GaAs should be terminated using an additional supply of Ga species, and (b) in the fabrication of GaAs/InGaP interface, the InGaP layer should be grown using the flow modulation method to suppress In surface segregation. In conclusion, the abruptness of hetero-interfaces of InGaP/GaAs and GaAs/InGaP was improved by using these optimized gas-switching sequences.     

Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs) was performed by metalorganic vapor phase epitaxy (MOVPE). The layers of a blue light-emitting diode (LED), that includes five InGaN quantum wells, were grown on a patterned GaN template on a sapphire substrate. In order to elucidate the contribution of vapor-phase diffusion of group-III precursors to the in-plane modulation of luminescence wavelength, the width of a stripe selective growth area was 60 μm that is sufficiently larger than the typical surface diffusion length, with the mask width varied stepwise between 30 and 240 μm. The distribution of the luminescence wavelength from the MQWs was measured with cathode luminescence (CL) across the stripe growth area. The peak wavelength ranged between 420 and 500 nm. The peak shifted to longer wavelengths and became broader as the measured point approached to the mask edge. Such a shift in the peak wavelength exhibited parabolic profile in the growth area and the wider mask shifted the entire peak positions to longer wavelengths. These trends clearly indicate that the vapor-phase diffusion play a dominant role in the in-plane modulation of the luminescence wavelength in the SA-MOVPE of InGaN MQWs, when the size of a growth area and/or the mask width exceeds approximately 10 μm.     

GaN/GaAs(1 0 0) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on GaN were observed: step-edge, layer-by-layer 2D, and 3D island growth. A two-temperature growth process was found to yield good crystal quality and atomically flat surfaces. The results suggest that MOVPE-grown thin GaN layers may be applicable to novel GaAs heterostructure devices.     

Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition

A series of ZnO films were grown on GaAs(0 0 1) substrates at different growth temperatures in the range 250–720°C by metalorganic chemical vapor depostion. Field emission scanning electron microscopy was utilized to investigate the surface morphology of ZnO films. The crystallinity of ZnO films was investigated by the double-crystal X-ray diffractometry. The optical and electrical properties of ZnO films were also investigated using room-temperature photoluminescence and Hall measurements. Arrhenius plots of the growth rate versus reciprocal temperature revealed the kinetically limited growth behavior depending on the growth temperature. It was found that the surface morphology, structural, optical and electrical properties of the films were improved with increasing growth temperature to 650°C. All the properties of the film grown at 720°C were degraded due to the decomposition of ZnO film.     

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth.     

Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Different InGaN/GaN multi quantum wells (MQWs) structures were grown by metalorganic chemical vapor deposition (MOCVD). Samples were investigated by photoluminescence (PL), atom force microscopy (AFM) and double crystal X-ray diffractometry (DCXRD) to character their optical, morphological and crystal properties. By inserting the strain relief layer, the PL intensity was increased more than two times. The surface morphology was improved and the density of V-pits was reduced from 16–18×10⁸ to 6–7×10⁸/cm². Further, the interface abruptness was also improved. We attributed the improvements of the quality of InGaN/GaN MQWs to the relief of strain in the InGaN/GaN MQWs.     

Surface analysis of different oriented GaAs substrates annealed under bismuth flow

Several orientations of GaAs substrates, including (1 0 0), (4 1 1), (1 1 1) and (5 1 1) have been annealed in a metalorganic vapour phase epitaxy (MOVPE) horizontal reactor at different annealing temperatures and under different trimethyl-bismuth (TMBi) flux. Surface morphology of the annealed GaAs substrates was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show islands formation on all the studied samples. The density and size of Bi islands vary greatly with annealing temperature and TMBi flow. For different substrate orientations, the activation energies were deduced from Arrhenius plot of island density. Except for (5 1 1) oriented GaAs, all the studied orientations show the same activation energy of 1.8 eV. For low annealing temperature 420 °C, and under different Bi flux, each oriented substrate shows a specific behaviour. For higher temperatures 700 °C and above Bi islands are totally removed and the substrates are smooth. Surface change of (1 0 0) oriented GaAs substrate was in situ monitored by laser reflectometry.     

Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures

We have grown GaAs epitaxial films on MnZn-ferrite substrates using MnAs buffer layers and investigated their heterointerfaces with glazing incidence-angle X-ray reflectivity and X-ray photoelectron spectroscopy. It has been found that the heterointerfaces for this structure are quite abrupt and the roughness at the GaAs/MnAs and MnAs/MnZn-ferrite interfaces are 1.1 and 0.2 nm, respectively. We also found that the diffusion of atoms through the GaAs/MnAs interface into the GaAs film is negligible. These results indicate that the MnAs buffer layer for the GaAs/ferrite structure is chemically stable and promising for the application to the future magnetic electronics.     

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

We investigated the effect of different annealing atmospheres on contact behaviour of Ni/Au contacts on moderately doped p-GaN layers. We used the annealing gases N₂, O₂, Ar, and forming gas (N₂/H₂) at varying annealing temperatures from 350°C to 650°C in steps of 50°C. The p-GaN samples were either metalorganic chemical vapor deposition or molecular beam epitaxy grown. Contact characterization was done after each annealing step by using the circular transmission line model. Specific contact resistances were determined to be in the low 10⁻⁴ Ω cm² range for oxidized contacts. Accompanying chemical analysis using depth resolved Auger electron spectroscopy revealed that NiO was formed and Au diffused towards the interface, whereas annealing in forming gas prevented oxidation and did not lead to Ohmic behaviour.     

Photocurrent measurements on GaAs1−xNx epilayers grown by metalorganic chemical vapor deposition

GaAs_1−xN_x epilayers were grown on a GaAs(0 0 1) substrate by metalorganic chemical vapor deposition. Composition was determined by high resolution X-ray diffraction. Band gap was measured from 77 to 400 K by using photocurrent measurements. The photocurrent spectra show clear near-band-edge peak and their peak energies drastically decrease with increasing nitrogen composition due to band gap bowing in the GaAs_1−xN_x epilayers. Those red shifts were particularly notable for low nitrogen compositions. However, the shifts tended to saturate when the nitrogen composition become higher than 0.98%. When the nitrogen composition is in the range 1.68–3.11%, the measured temperature dependence of the energy band gap was nicely fitted. However, the properties for the nitrogen composition range 0.31–0.98% could not be fitted with a single fitting model. This result indicates that the bowing parameter reaches 25.39 eV for low nitrogen incorporation (x=0.31%), and decreases with increasing nitrogen composition.     

The injected carbon impurities in intermixed GaAs/AlAs multiple quantum wells during thermal treatment

Photoluminescence (PL) measurements were performed in order to investigate the carbon impurity effects on the intermixing behavior of GaAs/AlAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The GaAs/AlAs MQWs were annealed with a carbon source in a furnace annealing system. The PL spectra show that the magnitude of the intermixing of Al and Ga induced by thermal annealing in GaAs/AlAs MQWs increases with depth. The nonuniformity of the intermixing as a function of the depth originated from the carbon impurities which were injected during thermal treatment.     

The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well

Photoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs layers grown by molecular beam epitaxy are investigated. The temperature-dependent PL spectra of GaInNAs/GaAs QW with and without GaNAs layers are compared and carefully studied. It is shown that the introduction of GaNAs layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. The PL peak position up to 1.41 μm is observed at the room temperature. After adding the GaNAs layers into QW structures, there is no essential deterioration of luminescence efficiency. N-induced localization states are also not remarkably influenced. It implies that with optimized growth condition, high-quality GaInNAs/GaAs QWs with strain-compensated GaNAs layers can be achieved.     

Investigation of semi-insulating oxygen-doped GaAs

We found Oxygen-doped GaAs crystals to be suitable materials for CO₂ laser optical component preparation, with application at 10.6 μm. An optical transmission of 55% in the IR spectrum range, between 2 and 15 μm has been reached for such a GaAs type material. The GaAs crystals that we have analysed were grown by two procedures: Horizontal Bridgman (HB) and Liquid Encapsulated Czochralski (LEC). The HB method has been used for obtaining pure (undoped) crystals, while the oxygen-doped GaAs ingots were grown by LEC technique. The two types of samples processed in the same manner as regards mechanical polishing and chemical etching, which were investigated by Hall measurements, optical transmission spectrometry and elastic recoil detection analysis (ERDA) technique. The GaAs:O (LEC) has near semi-insulating properties as can be observed from the results of the electrical resistivity and Hall effect measurements. The ERDA spectrum shows an intense signal of oxygen in the bulk of GaAs:O (LEC) crystals, while the oxygen signal is not present in the ERDA spectrum of the undoped GaAs (HB). We consider that these results could recommend the ERDA technique as a possible qualitative and quantitative analysis in an ion-beam accelerator for oxygen content in oxygen-doped GaAs crystals. The analysis is not sensitive to the native oxide, as could be seen by measuring GaAs (HB) undoped crystals.     

Properties of self-assembled InAs quantum dots grown by various growth techniques

The properties of self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy on GaAs substrates were investigated. The surface properties of samples were monitored by reflection high-energy electron diffraction to determine growth. Photoluminescence (PL) and transmission electron microscope (TEM) were then used to observe optical properties and the shapes of the InAs-QDs. Attempts were made to grow InAs-QDs using a variety of growth techniques, including insertion of the InGaAs strained-reducing layer (SRL) and the interruption of In flux during QD growth. The emission wavelength of InAs-QDs embedded in a pure GaAs matrix without interruption of In flux was about 1.21 μm and the aspect ratio was about 0.21. By the insertion InGaAs SRL and interruption of In flux, the emission wavelength of InAs-QDs was red shifted to 1.37 μm and the aspect ratio was 0.37. From the PL and TEM analysis, the properties of QDs were improved, particularly when interruption techniques were used.     

Formation of Ge-diffusion-suppressed GaAs layers and InAs quantum dots on Ge/Si substrates

Crystal growth of GaAs layers and InAs quantum dots (QDs) on the GaAs layers was investigated on Ge/Si substrates using ultrahigh vacuum chemical vapor deposition. Ga-rich GaAs with anti-site Ga atoms grown at a low V/III ratio was found to suppress the diffusion of Ge into GaAs. S-K mode QD formation was observed on GaAs layers grown on Ge/Si substrates with Ga-rich GaAs initial layers, and improved photoluminescence from 1.3 μm-emitting InAs QDs was demonstrated.     

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

The influence of the growth rate and V/III ratio on the crystal quality of In_0.2GaAs/GaAs quantum well structures was examined. The investigated heterostructures were grown by molecular beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD). Reflection high energy electron diffraction (RHEED), photoluminescence measurements (PL), high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) were applied for evaluation of the interfaces smoothness and the overall layer quality. Comprehensive characterisation of InGaAs/GaAs structures allowed us to establish optimal values of analysed technological parameters. Moreover, the comparison between the results obtained for samples grown by two different epitaxial techniques allowed us to find, which of the analysed growth parameters has the strongest influence on the quality of MBE and MOCVD grown structures. In contrast with the growth temperature and the interruption time, which in different manner impact on the crystal quality of QWs obtained by different method, the growth rate and the V/III ratio play similar role in both epitaxial techniques.     

Luminescence characteristics of InAlP---InGaP heterostructures having native-oxide windows

Data are presented on the luminescence characteristics of InGaP/InAlP heterostructures with oxidized InAlP cladding layers grown by metalorganic chemical vapor deposition. The structures are grown on GaAs substrates and consist of either a 20 nm thick In_0.5Ga_0.5P quantum well or a 0.75 μm InGaP layer sandwiched between two InAlP bulk barriers or between two 10-period In_0.5Al_0.5P/In_xGa_1−xP strain-modulated superlattice heterobarriers, where x varies from 0.5 to 0.45 and the period of the superlattice is 3 nm. The top InAlP cladding layer of the InAlP/InGaP heterostructures is oxidized for 2–5.5 h at 500°C in an ambient of H₂O vapor saturated in a N₂ carrier gas. Photoluminescence and time-resolved photoluminescence studies at room temperature show that, as a result of the oxidation of a portion of the top InAlP cladding layer, the photoluminescence emission intensity and lifetime from the InGaP QWs increase significantly.