Das elektronische Bremsvermögen von Stickstoff und Sauerstoff für niederenergetische Protonen

The electronic stopping power of molecular oxygen and nitrogen for protons with energies between 1 keV and 30 keV has been measured using a differentially pumped stopping cell. Our results give a surprisingly good confirmation of the Lindhard-Scharff statistical theory which predicts a linear velocity dependence of the electronic stopping power at low projectile energies. Moreover our data are in fair agreement with earlier high energy (E ≧ 20 keV) measurements in other laboratories. The combination of the present measurements with theoretically calculated nuclear stopping powers yields an estimate of the atomic stopping power. This estimate leads to substantially lower atomic stopping powers at low energies compared to values derived from range measurements. This result may have interesting implications on auroral hydrogen emissions.     

High resolution measurements of energy spectra of protons scattered from silicon crystals in the case of planar channelling

The energy spectrum of backscattered protons in the case of incidence along several planar directions shows a fine structure near the high-energy edge. This structure, an oscillatory dependence of the probability of backscattering vs. depth in the crystal, offers a possibility to study the proton trajectory in the lattice and also to obtain the stopping power of protons near planes in silicon.

Application of a simple model for the proton trajectory yields a stopping power near the planes 4 to 5 times higher than for random incidence. These effects have been observed using primary energies in the range 40–140 keV and for incidence along (110). (111), (100) and (112) planes.     

Stopping power in insulators and metals without charge exchange

The slowing-down process of pointlike charged particles in matter has been investigated by measuring the stopping power for antiprotons in materials of qualitatively very different nature. Whereas the velocity-proportional stopping power observed for metal-like targets such as aluminum over a wide energy range of 1-50 keV is in agreement with expectations, it is surprising that the same velocity dependence is seen for a large band-gap insulator such as LiF. The validity of these observations is supported by several measurements with protons and several checks of the target properties. The observations call for both a qualitative explanation and a quantitative theoretical model.     

Electronic excitations during grazing scattering of hydrogen atoms on KI(001) and LiF(001) surfaces

The energy loss of hydrogen atoms with energies of 400 eV and 1 keV is studied in coincidence with the number of emitted electrons during grazing scattering from atomically clean and flat KI(001) and LiF(001) surfaces. The energy loss spectra for specific numbers of emitted electrons are analyzed in terms of a binary interaction model based on the formation of transient negative ions via local capture of valence band electrons from anion sites. Based on computer simulations we derive for this interaction scenario probabilities for the production of surface excitons, for electron loss to the conduction band of KI, for emission of electrons, and for formation of negative hydrogen ions. The pronounced differences of data obtained for the two surfaces are attributed to the different electronic structures of KI and LiF.     

Atomic processes in antiproton-matter interactions

Atomic processes dominate antiproton stopping in matter at nearly all energies of interest. They significantly influence or determine the antiproton annihilation rate at all energies around or below several MeV. This article discusses what is known about the atomic processes which, through their effect on stopping and annihilation, significantly influence the spatial distribution of antiproton annihilations in a material. For stopping above about 10 eV the processes are antiproton-electron collisions, effective at medium keV through high MeV energies, and elastic collisions with atoms and adiabatic ionization of atoms, effective from medium eV through low keV energies. For annihilation above about 10 eV it is the enhancement of the antiproton annihilation rate due to the antiproton-nucleus Coulomb attraction, effective around and below a few tens of MeV. At about 10 eV and below, the atomic rearrangement/annihilation process determines both the stopping and annihilation rates. Although a fair amount of theoretical and some experimental work relevant to these processes exist, there are a number of energy ranges and material types for which experimental data does not exist and for which the theoretical information is not as well grounded or as accurate as desired. Additional experimental and theoretical work is required for accurate prediction of antiproton stopping and annihilation for energies and materials relevant to antiproton experimentation and application.     

Electronic stopping power in LiF from first principles

Using time-dependent density-functional theory we calculate from first principles the rate of energy transfer from a moving proton or antiproton to the electrons of an insulating material, LiF. The behavior of the electronic stopping power versus projectile velocity displays an effective threshold velocity of approximately 0.2 a.u. for the proton, consistent with recent experimental observations, and also for the antiproton. The calculated proton/antiproton stopping-power ratio is approximately 2.4 at velocities slightly above the threshold (v approximately 0.4 a.u.), as compared to the experimental value of 2.1. The projectile energy loss mechanism is observed to be extremely local.     

Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

Oxygen profiles in silicon implanted with energies between 2 and 20 MeV by means of a Tandem accelerator have been investigated with a microprobe after bevelling the sample surface. It is shown that the measured profiles correspond to the implantation profiles when the microprobe is operated with a well focussed 2 keV electron beam. The projected ion ranges and the profiles thus obtained are compared with theoretical profiles which have been calculated by a Monte Carlo simulation of the stopping procedure. Takingk=1.30k _LSS for the electronic stopping coefficient in the LSS region up to 2.55 MeV and a constant value of 162 eV/Å for the electronic stopping at higher energies the calculation yields satisfactory range estimates, whereas the range straggling is systematically too small up to 13% in comparison with the experimental results.     

H+2，H+3团簇离子在沟道条件下的背散射 质子产额测量

采用卢瑟福背散射方法，测得了每质子能量为650 keV的H⁺₂，H+₃团簇离子在Si晶体<100>和<110>沟道条件下的质子背散射能谱.结果发现，由于H⁺₂，H⁺₃团簇在晶体中的库仑爆炸和团簇效应，H⁺₂的背散射质子产额大于H ⁺的背散射产额，而H^{+< 关键词： 团簇 沟道效应 库仑爆炸 背散射}     

Mutual recombination in slow Si^＋ ＋ H^- collisions

This paper studies the process of mutual neutralization of Si^＋ and H^- ions in slow collisions within the multichannel Landau-Zener model. All important ionic-covalent couplings in this collision system are included in the collision dynamics. The cross sections for population of specific final states of product Si atom are calculated in the CM energy range 0.05 e∨/u-5 ke∨/u. Both singlet and triplet states are considered. At collision energies below -10 e∨/u, the most populated singlet state is Si（3p4p, ^1S0）, while for energies above -150e∨/u it is the Si（3p, 4p, ^1P1） state. In the case of triplet states, the mixed 3p4p（^3S1 ＋^3P0） states are the most populated in the entire collision energy range investigated. The total cross section exhibits a broad maximum around 200 300e∨/u and for ECM ≤ 10e∨/u it monotonically increases with decreasing the collision energy, reaching a value of 8 × 10^-13 cm^2 at ECM = 0.05 e∨/u. The ion-pair formation process in Si（3p^2 ^3PJ）＋H（1s） collisions has also been considered and its cross section in the considered energy range is very small （smaller than 10^-20 cm^2 in the energy region below 1 ke∨/u）.     

25 MeV/u Kr辐照下PET薄膜的损伤机制研究

通过25 MeV/u 86 Kr离子辐照叠层结晶聚对苯二甲酸乙二醇酯膜（PET）, 在不同的电子能损（3.40-7.25 keV/nm）和离子注量(5×1011----3×1012 ions/cm2)辐照条件下, 对Kr离子在PET中引起的辐照损伤效应进行了研究。借助傅里叶变换红外光谱分析,通过对样品的红外吸收峰进行扣除基底后的Lorentz拟合,分析了与主要官能团对应的吸收峰强度的变化趋势, 研究了化学结构与组分在重离子辐照下的变化规律; 利用X射线衍射光谱仪测量, 研究了Kr离子在PET潜径迹中引起的非晶化过程,并通过对吸光度和非晶化强度随离子注量的指数衰减规律的分析, 获得了不同电子能损离子辐照PET时主要官能团的损伤截面和非晶化截面及对应的潜径迹半径。 At room temperature, polyethylene terephthalate(PET) foil stacks were irradiated by 25 MeV/u Kr ions in the electronic stopping power range(3.3--7.66 keV/nm) and the fluence range from 5×1011 to 3×1012 ions/cm2. The behaviour of the main function groups with fluence and electronic stopping power were studied by using Fourier transform infrared(FTIR) spectroscopy, the degradation of the function group was investigated with the Lorentz fitting subtracted baseline. The amorphous processes in the latent tracks of PET were studied by X ray diffraction(XRD) measurements. The Kr ion induced degradation cross section and amorphisation cross sections(radii) for different electronic energy loss were acquired from the experimental data(FT IR and XRD) by exponential decay function respectively.      

Stopping cross sections of 50- to 230-keV nitrogen ions in silicon measured by ion backscattering spectroscopy

The energy dependence of the total stopping cross section of 50- to 230-keV nitrogen ions in silicon (σ _S (E)) is measured in order to develop the diagnostics of heavy impurities in films of a nanometer thickness by heavy ion backscattering (HIBS) spectroscopy. At ion energies lower than 150 keV, this σ _S (E) dependence occupies an intermediate position between the dependences given in the SRIM and MSTAR data-bases; at higher energies, our dependence is closer to the former dependence. The estimation of the effect of inelastic processes on the stopping cross section demonstrates that the effect of these processes for nitrogen ions can be neglected when heavy impurities in such films are studied by HIBS.     

Detection of Fe 3d electronic states in valence band and magnetic properties of Fe-doped ZnO film

Fe-doped ZnO film has been grown by laser molecular beam epitaxy (L-MBE) and structurally characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), all of which reveal the high quality of the film. No secondary phase was detected. Resonant photoemission spectroscopy (RPES) with photon energies around the Fe 2p-3d absorption edge is performed to detect the electronic structure in the valence band. A strong resonant effect at a photon energy of 710 eV is observed. Fe³⁺ is the only valence state of Fe ions in the film and the Fe 3d electronic states are concentrated at binding energies of about 3.8 eV and 7 eV～ 8 eV. There are no electronic states related to Fe near the Fermi level. Magnetic measurements reveal a typical superparamagnetic property at room temperature. The absence of electronic states related to Fe near the Fermi level and the high quality of the film, with few defects, provide little support to ferromagnetism.     

Range parameters of heavy ions in amorphous targets at LSS-energies of 0.0006⩽ ϵ ⩽ 0.3

Heavy ions of various elements have been implanted into amorphous silicon, germanium and aluminum layers at energies of 1–60 keV. High resolution ion backscattering has been used to determine range parameters and nuclear stopping powers.     

Subsurface-channeling-like energy loss structure of the skipping motion on an ionic crystal

The skipping motion of Ne+ ions in grazing scattering from the LiF(001) surface is studied for velocity below 0.1 a.u. with a time-of-flight technique. It is demonstrated that suppression of electronic excitation and dominance of optical phonon excitation in the projectile stopping results in an odd 1,3,5,... progression of the energy loss peaks, a feature usually ascribed to subsurface channeling. The experimental findings are well reproduced by parameter-free model calculations where thermal vibrations are the dominant cause for the ion trapping and detrapping.     

低能质子束在氢等离子体中的能损研究

实验测量了100 keV的质子束穿过部分电离氢等离子体靶后的能量损失. 等离子体靶由气体放电方式产生, 其自由电子密度在10¹⁶ cm^-3量级, 电子温度约1–2 eV, 维持时间在微秒量级. 研究结果表明: 质子束在等离子体靶中的能量损失与自由电子密度密切相关且明显大于在同密度条件下中性气体靶中的能量损失; 在自由电子密度达到峰值处, 通过实验结果计算得到此时的自由电子库仑对数约为10.8, 与理论计算结果符合较好, 该值比Bethe公式给出的中性气体靶中束缚电子库仑对数高4.3倍,相应的能损增强因子为2.9.     

Experimental and theoretical determination of the stopping power of ZrO<Subscript>2</Subscript> films for protons and <Emphasis Type="Italic">α</Emphasis>-particles

We report the results of an experimental-theoretical study on the stopping power of ZrO₂ films for swift H and He ion beams. The experiments, using the Rutherford Backscattering technique, were done for protons with incident energies in the range 200–1500 keV and for α-particle beams with energies in the range 160–3000 keV. The theoretical calculations were done in the framework of the dielectric formalism using the MELF-GOS model to account for the ZrO₂ target electronic response. It is shown that for both ion beams, the agreement between theory and experiment is quite remarkable.     

质子轰击钨靶表面时的电子发射产额与靶温度的相关性研究

在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量为50～250 keV的质子入射不同温度下钨靶表面的电子发射产额。实验结果发现,不同能量的质子引起的电子发射产额均随着靶温度的升高而降低;利用功函数对温度的依赖性定性地解释了该结果。在不同靶温度下,总电子发射产额与电子能损的比值随着质子能量的增加而逐渐变小;利用靶原子不同壳层中电子之间的电离竞争机制来解释实验结果。     

Annealing of radiation damage in graphite

Abstract

The electronic stopping of heavy ions with 7 ≤ Z, ≤ 54 in low-index directions of thin gold single crystals is measured in the energy range 200 keV ≤ E ≤ 1100 keV. Large oscillations in electronic stopping power are observed for constant ion velocity. The stopping powers of different low-index directions are compared.     

Anomalous enhancement of DD reaction in Pd and Au/Pd/PdO heterostructure targets under low-energy deuteron bombardment

Yields of protons emitted in the D+D reaction in Pd, Au/Pd/PdO, Ti, and Au foils are measured by a d E-E counter telescope for bombarding energies between 2.5 and 10 keV. The experimental yields are compared with those predicted from a parametrization of the cross section and stopping power at higher energies. It is found that for Ti and Au target the enhancement of the D(d,p)T reaction is similar to that observed with a deuterium gas target (several tens of eV). The dependence of the yields on the bombarding energy corresponds well to the screening potential parameters U _s=250±15 eV for Pd and 601 ±23 eV for Au/Pd/PdO. Possible models of the enhancement obtained are discussed. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 11, 785–790 (10 December 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Proton energy loss in multilayer graphene and carbon nanotubes

Results of a study of electronic energy loss of low keV protons interacting with multilayer graphene targets are presented. Proton energy loss shows an unexpectedly high value as compared with measurements in amorphous carbon and carbon nanotubes. Furthermore, we observe a classical linear behavior of the energy loss with the ion velocity but with an apparent velocity threshold around 0.1?a.u., which is not observed in other carbon allotropes. This suggests low dimensionality effects which can be due to the extraordinary graphene properties.