Effect of Oxygen on the Quantum,Magnetic, and Thermodynamic Properties of Co Nanowires on the Reconstructed Anisotropic (1 × 2)/Au(110) and (1 × 2)/Pt(110) Surfaces: Ab Initio Approach

Ab initio theoretical study of the quantum magnetic properties of Co nanowires on the pure and oxygen-reconstructed (1 × 2)/Au(110) and (1 × 2)/Pt(110) surfaces is performed. Their structures and electronic configurations are calculated using the electron density functional theory. High values of magnetic moment and magnetic anisotropy energies of Co atoms are found on both pure and oxygen-reconstructed (1 × 2)/Au(110) and (1 × 2)/Pt(110) surfaces. The adsorption of oxygen atoms on the (1 × 2)/Au(110) substrate is shown to affect the structural arrangement of Co nanowire atoms on this substrate and to increase the magnetic anisotropy energy (by 1.91 meV per nanowire atom). The adsorption of oxygen on the Pt(110) substrate substantially decreases the magnetic anisotropy energy of the Co nanowire on it (by 5.98 meV per atom). The origin of these changes is revealed by analyzing the local densities of states of the d electrons of nanowire atoms. The temperature ranges of the states with the lowest free surface energy are determined using the atomistic thermodynamics methods. These data and the available experimental data are used to predict the possibility of observing the structures under study in experiments.     

Observation of new two-dimensional periodic structures in the confined regions of the reconstructed Pt(100) surface

New 2D periodic structures have been observed by STM in the regions of the reconstructed Pt(100) surface which are confined by domain boundaries or lattice steps. These structures can be seen only in a very narrow energy window near the Fermi level, and they are strongly correlated to the original atomic arrangements of the surface. These structures arise most probably from a modification in the distribution of the electronic density of states which is strongly coupled to the ion cores of the surface to produce a periodic shift in the atomic rearrangements in order to minimize the strain and free energy of the surface.     

递归法研究Pt对Ti合金腐蚀影响

采用递归法计算了Ti及Ti合金的电子态密度、环境敏感镶嵌能、费米能级和格位能等电子结构参量.计算发现Pt在晶体中环境敏感镶嵌能和格位能高于表面,从电子层面证实Pt易在 Ti合金表面偏聚.偏聚在表面的Pt有序能为正值,故Pt以有序相（Pt与Ti的化合物）形式分布在合金表面.晶体表面Pt 与Ti的化合物电极电位较低,它与Ti形成微电池.在腐蚀介质的作用下,Pt与Ti的化合物分解,Pt沉淀到晶体表面造成Pt在合金表面形成凹凸不平的Pt电催化层.Pt电催化层加强Ti钝化作用,从而提高了Ti合金的抗腐蚀能力. 关键词： 电子结构 Ti合金表面 钝化     

First principles study of N-N split interstitial in GaN nanowires

Atomic and electronic properties of N-N split interstitial in GaN nanowires have been investigated using first principles calculations. The formation energy calculations show that the N-N interstitial favors substituting an N atom at the surface of the nanowires. The interstitial induces localized states in the band gap of GaN nanowires.     

Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels epsilon(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3+/-0.1 eV below the vacuum level. Calculations of epsilon(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.     

多壳层铜纳米线结构和电子特性的第一性原理研究

基于密度泛函理论框架下的第一性原理计算,系统地研究了多壳层Cu纳米线的稳定结构和电子特性.得到不同线径多壳层Cu纳米线的平衡态晶格常数相差不大,都表现出金属特性,且其单原子平均结合能和量子电导随着纳米线直径的增加而增加.纳米线中内壳层Cu原子表现出体相结构Cu原子相似的电子特性,而表面壳层由于配位数的减少,其3d态能量范围变窄且整体向费米能级发生移动.电荷密度分析表明,相对于体相Cu晶体中原子间的相互作用,纳米线表面壳层Cu原子与其最近邻原子间的相互作用明显增强.     

T1uhg杨-泰乐系统：D5d势阱中的各向异性现象

杨-泰乐(Jahn-Teller缩写为JT)系统在其最低的绝热势能面上常常典型地含有一系列相互等同的势阱.在C60分子中，若一个电子占据该分子的三重简并的能量最低电子态，这一具有T1u对称性的电子态将会与具有hg对称性的五重简并振动态发生相互作用，形成所谓的T1uhg JT系统.当考虑电声的非线性相互作用时，该系统的势能面上将出现D5d对称性的势阱并伴随D3d对称性的势垒；反之亦然.本文在幺正平移变换的基础上，引入了标度变换，研究了该JT系统中D5d势阱中的各向异性现象：在电子空间中，非线性项的引入使得 关键词： C60 杨-泰乐效应 各向异性 电声耦合 标度变换     

X-ray photoemission studies of PtSn and PtPb bimetallic systems

The Pt(5d) and Pt(4f) in PtSn and PtPb composites produced by sequential vapor deposition have been examined by X-ray photoelectron spectroscopy. At low concentrations of Pt, the Pt(5d) becomes a single, narrow resonance at about 4 eV below the Fermi level. Its density of states at the Fermi level is small. This leads to a large suppression of the Pt(4f) lineshape asymmetry. As the Pt concentration increases, d-d interactions split the Pt(5d) resonance and increase the 5d density of states at the Fermi level by pushing one of the split resonances to the Fermi level. Consequently, the Pt(4f) lineshape asymmetry increases. The evolution of the Pt(4f) and Pt(5d) in PtSn and PtPb are very similar but different from that of small Pt particles supported on carbon. The close similarity of the electronic properties of Pt in PtSn and PtPb suggests that the poisoning of Pt by Pb is not entirely due to electronic effects although there are indications of stronger interaction between Pt and Pb than between Pt and Sn atoms. The strong surface enrichment of Pb on PtPb points to the importance of the physical blockage of Pt atoms by surface Pb in determining the poisoning effect of Pb.     

Electronic structure of bimetallic Ni–Rh nanowires

The electronic structure of a bare Rh(553) surface and of a Ni-decorated Rh(553) surface has been investigated by angle-resolved UV photoelectron spectroscopy and density functional theory calculations. The self-assembly of Ni adatoms leads to the decoration of the steps of the Rh(553) surface with monoatomic Ni rows under suitable kinetic conditions, thus forming a regular array of pseudomorphic bimetallic Ni–Rh nanowires. The electronic structure of the clean Rh(553) surface has been compared to the one of the flat Rh(111) surface, and additional surface states localized at the step edges due to the lower coordination of the step atoms have been detected. The Ni wires are weakly hybridized with the Rh substrate states and are characterized by only weakly dispersing states. This leads to a strong narrowing of the d-band, which is argued to be the origin of the observed high chemical reactivity of the Ni–Rh nanowires.     

Electronic states of moiré modulated Cu films

We examined by low-energy electron diffraction and scanning tunneling microscopy the surface of thin Cu films on Pt(111). The Cu/Pt lattice mismatch induces a moiré modulation for films from 3 to about 10?ML thickness. We used angle-resolved photoemission spectroscopy to examine the effects of this structural modulation on the electronic states of the system. A series of hexagonal- and trigonal-like constant energy contours is found in the proximity of the Cu(111) zone boundaries. These electronic patterns are generated by Cu sp-quantum well state replicas, originating from multiple points of the reciprocal lattice associated with the moiré superstructure. Layer-dependent strain relaxation and hybridization with the substrate bands concur to determine the dispersion and energy position of the Cu Shockley surface state.     

Probing the electronic structure of ZnO nanowires by valence electron energy loss spectroscopy

Valence electron energy loss spectroscopy in a transmission electron microscope is employed to investigate the electronic structure of ZnO nanowires with diameter ranging from 20 to 100 nm. Its excellent spatial resolution enables this technique to explore the electronic states of a single nanowire. We found that all of the basic electronic structure characteristics of the ZnO nanowires, including the 3.3 eV band gap, the single electron interband transitions at approximately = 9.5, approximately = 13.5,and approximately = 21.8 eV, and the bulk plasmon oscillation at approximately 18.8 eV, resemble those of the bulk ZnO. Momentum transfer resolved energy loss spectra suggest that the 13.5 eV excitation is actually consisted of two weak excitations at approximately = 12.8 and approximately = 14.8 eV, which originate from transitions of two groups of the Zn 3d electrons to the empty density of states in the conduction band, with a dipole-forbidden nature. The energy loss spectra taken from single nanowires of different diameters show several size-dependent features, including an increase in the oscillator strength of the surface plasmon resonance at approximately = 11.5 eV, a broadening of the bulk plasmon peak, and splitting of the O 2s transition at approximately = 21.8 eV into two peaks, which coincides with a redshift of the bulk plasmon peak, when the nanowire diameter decreases. All these observations can be well explained by the increased surface/volume ratio in nanowires of small diameter.     

Confined Ge–Pt states in self-organized Pt nanowire arrays on Ge(001)

By means of band structure calculations within the density functional theory and the generalized gradient approximation, we investigate the electronic structure of self-organized Pt nanowires on the Ge(001) surface. In particular, we deal with a novel one-dimensional surface state confined in the nanowire array and clarify its origin. Due to large Pt contributions, the novel state is rather a mixed Ge–Pt hybrid state than a confined Ge surface state. Moreover, we compare our results to data from scanning tunneling microscopy.     

基于第一性原理的Mn纳米线掺杂二维SnSe热电性能研究

本文提出了一种在二维SnSe中掺杂一维Mn纳米线的2D-1D复合结构,并系统地研究了其热电性能。结果表明,一维Mn纳米线将电子态汇聚在纳米线附近,提高了材料的各向异性,降低了电子在某一方向上的散射效应,导致了较高的迁移率和电导率。自旋向上和向下的电子态发生简并,导致了较高的塞贝克系数和电导率。此外,Mn纳米线将晶格热导率降低了约0.17 W·m^?1·K^?1。在200至650 K的温度范围内,3Mn-SnSe具有0.73至3.78的极高ZT值,比本征二维SnSe平均提高了约39.2%。     

基于第一性原理的Mn纳米线掺杂二维SnSe热电性能研究

本文提出了一种在二维SnSe中掺杂一维Mn纳米线的2D-1D复合结构,并系统地研究了其热电性能。结果表明,一维Mn纳米线将电子态汇聚在纳米线附近,提高了材料的各向异性,降低了电子在某一方向上的散射效应,导致了较高的迁移率和电导率。自旋向上和向下的电子态发生简并,导致了较高的塞贝克系数和电导率。此外,Mn纳米线将晶格热导率降低了约0.17 W·m^?1·K^?1。在200至650 K的温度范围内,3Mn-SnSe具有0.73至3.78的极高ZT值,比本征二维SnSe平均提高了约39.2%。     

Ab initio study of platinum induced reconstructions on Ge(001)-(1×2) surface with dimerization

We present first principle total energy calculation of Pt induced reconstructions on Ge(001)-(1×2) surface with dimerization. Study was undertaken using localized orbitals basis set DFT using SIESTA to compare pure Ge dimerized Ge(001)-(1×2) surface with 0.5 and 1.0 Pt covered dimerized Ge(001)-(1×2) surface with the possibility of homo (Ge-Ge and Pt-Pt) and hetro (Pt-Ge) dimers. From total energy calculation results we calculated dimer bond lengths, buckling angles and formation energy of dimers on Ge(001)-(1×2) surface. By calculating the formation energy of different configurations we find that Ge-Ge buckled dimerized surface has least (−1.23 eV/dimer) and Pt-Pt symmetric dimerized surface has largest (+0.09 eV/dimer) formation energy with respect to unreconstructed surface. We further calculated the electronic DOS and band structure of Ge dimerized as well as Pt dimerized surface to see the change in semiconducting behavior on dimerization. By comparing the DOS and electronic band structure of homo Ge dimerized surface, we found metallicity of Ge(001)-(1×2) surface results from dimer formation. Also by comparing the electronic band structure of homo Ge dimerized surface with unreconstructed surface we find that less number of bands crossing the Fermi level which is perhaps due to the saturation of one dangling bond per Ge surface atom. By introducing Pt at 0.5 and 1.0 coverage in place of Ge, except for homo Pt buckled dimerized surface having 1.0 coverage of Pt, we find in all other cases increase in number of bands are crossing the Fermi level, indicating strong metallic behavior of Ge(001)-(1×2) surface.     

Electronic structure calculations for inhomogeneous systems: Interfaces,surfaces, and nanocontacts

The article gives an introduction into the application of density functional theory (DFT) to inhomogeneous systems. To begin with, we describe the interplay of specific materials at interfaces, resulting in structure relaxation and modifications of the chemical bonding. We address interfaces between YBa₂Cu₃O₇ and a normal metal, in order to quantify the intrinsic interface charge transfer into the superconductor. Moreover, we study the internal interfaces in a V₆O₁₃ battery cathode and the effects of ion incorporation during the charging and discharging process. The second part of the article deals with the influence of surfaces on the nearby electronic states. Here, we investigate a LaAlO₃/SrTiO₃ heterostructure in a thin film geometry. We particularly explain the experimental dependence of the electronic states at the heterointerface on the surface layer thickness. Afterwards, surface relaxations are studied for both the clean Ge(001) surface and for self‐assembled Pt nanowires on Ge(001). In the third part, we turn to atomic and molecular contacts. We compare the properties of prototypical Al nanocontact geometries, aiming at insight into the chemical bonding and the occupation of the atomic orbitals. Finally, the local electronic structure of a benzene‐1,4‐dithiol molecule between two Au electrodes is discussed as an example for a molecular bridge.     

Enhanced photocatalytic performance of TiO2 nanowires by substituting noble metal particles with reduced graphene oxide

Noble metal particles have been embedded in semiconductors to improve photocatalysis efficiently, but the high cost made this approach difficult to apply widely in industry. Herein titanium dioxide/reduced graphene oxide (TiO₂/rGO) nanowires in a core-shell structure were prepared. The physicochemical properties and photocatalytic performance of the specimen were characterized in comparison with TiO₂ and TiO₂/Pt nanowires. The rGO layer and Pt nanoparticles increased chemical states of the components, reduced bandgap energy of the nanowires, enhanced visible light absorption, improved conductance and capacitance significantly. The methylene blue as catalyzed by TiO₂/Pt and TiO₂/rGO nanowires was degraded to 7.9% and 8.4% in an hour, but retained 25.7% by the TiO₂ nanowires. The properties and function of TiO₂/rGO nanowires were close to those of TiO₂/Pt nanowires, while the rGO price was much lower than that of Pt, which was of great significance for the photocatalytic application of TiO₂ heterojunction materials in industry.     

Quantum confinement and surface-state effects in bismuth nanowires

Bulk bismuth is an efficient thermoelectric material. Assuming intrinsic conditions, the theory of quantum confinement of bismuth nanowires by Hicks and Dresselhaus predicts a semimetal-to-semiconductor transformation for critical diameters of around 50 nm. For nanowires of diameters below the critical diameter, electronic states can be considered to be one dimensional and therefore the thermopower can be very large. However, angle-resolved photoemission spectroscopy (ARPES) studies of Bi planar surfaces present direct evidence of heavy mass surface states that can inhibit the semimetal-to-semiconductor transformation. We present a study of the Fermi surface of Bi nanowires of diameters ranging between 200 and 30 nm employing the Shubnikov–de Haas method. Our results can be understood in terms of the model of surface states. For 30 nm nanowires we find that the Fermi surface is spherical, that the carriers have high effective mass, and that the number of carriers corresponds to that inferred from ARPES measurements.     

Angle resolved photoemission study of surface states on the Pt(997) vicinal surface

One-dimensional atomic chains can be synthesized on stepped surfaces and the electronic structure of the high vicinal surface plays an essential role in determining the physical properties of atomic chains grown on top of it. We have applied surface analysis techniques to study the surface of a Pt(997) single crystal. The STM image of the surface showed that the surface was uniform with a well defined distance between the terraces. Angle resolved photoemission spectroscopy (ARPES) was used to characterize the electronic states of the Pt(997) surface, and confinement of electrons with wave vector perpendicular to the step direction was observed.     

Nanomaterial electronic structure investigation by valence electron energy loss spectroscopy - an example of doped ZnO nanowires

The effects of doping (by ion implantation) on the electronic structure of ZnO nanowires, particularly on the defect states generation in the band gap of ZnO, are investigated using valence electron energy loss spectroscopy (VEELS) performed in a transmission electron microscope (TEM). The improved spectrum energy resolution via the introduction of a gun monochromator, together with the reduced intensity in the zero loss peak tail as realized by spectrum acquisition at non-zero momentum transfer, enable us to extract such electronic structure information from the very low loss region of the EEL spectra. We have compared the doping effects of several dopant elements, i.e., Er, Yb, and Co, and found that generation of the band tail states ( approximately 2-3.3eV) is a common consequence of the ion implantation process. On the other hand, specific mid-gap state(s) in the lower energy range are created only in the rare earth element doped ZnO nanowires, suggesting the dopant-sensitive nature of such state.