Ground state structures in the polonium based II-VI compounds

We have performed ab-initio self-consistent calculations using the full-potential linear augmented plane-wave method to investigate the structural and the electronic properties of the less known II-VI compounds: ZnPo, CdPo, and HgPo. Total energy calculations of the cubic zinc-blende, wurtzite, rocksalt, cesuim chloride, orthorhombic Cmcm, and tetragonal PbO phases are investigated. Ground state parameters are computed, and compared with available theoretical and experimental works. The zinc-blende structure is found to be the ground state phase of ZnPo and CdPo, while HgPo prefers the tetragonal PbO structure. The calculated band structure of II-Po shows features that differ considerably from those of typical II-VI semiconductors. In particular we found an inverted band gap, reflecting a semi-metallic character for these compounds.     

Electronic Properties of III – V Semiconductors

The electronic structure of a series of III–V zinc-blende semiconductors is calculated by the full-potential linearized augmented-plane-wave method, using different exchange-correlation potential approximations. The calculated equilibrium lattice parameters and bulk moduli are shown to agree well with experiment, the band gap being acutely sensitive to the choice of the exchange-correlation potential approximation.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 61–67, January, 2005.     

Li(Na)AuS体系拓扑绝缘体材料的能带结构

在拓扑领域中发现可以通过大数据搜索拓扑绝缘体,使得此领域对材料的探索转变为对材料性质的研究.半Heusler合金体系是非平庸拓扑绝缘体材料的重要载体.通过全势线性缀加平面波方法计算Li(Na)AuS体系拓扑绝缘体材料的能带结构.采用各种关联泛函计算LiAuS的平衡晶格常数,发现得到的能带图均为具有反带结构的拓扑绝缘体,...     

Optical properties of germanium dioxide in the rutile structure

We present first-principles calculations for the optical properties of germanium dioxide in the rutile structure. The electronic band structure has been calculated self-consistently within the local density approximation using the full-potential linearized augmented plane wave method. The electronic band structure shows that the fundamental energy gap is direct at the center of the Brillouin zone. The determinant role of a band structure computation with respect to the analysis of the optical properties is discussed.     

Pressure coefficients of band gaps in semiconductors

A first principles pseudopotential method within the local density approximation is used to calculate the pressure coefficients for band gaps in several diamond and zincblende semiconductors. Despite the underestimation of the band gaps found in almost all local density calculations, the predictions for the linear pressure coefficients and the critical pressures for conduction band inversion are consistent with experiment for all cases considered.     

Electronic structure calculations of lead chalcogenides PbS, PbSe, PbTe

In this work, we have extended our study of the mechanical properties and the electronic structure of PbTe to include other Pb chalcogenide compounds (PbSe, PbS). The calculations were performed self-consistently using the scalar-relativistic full-potential linearized augmented plane wave method. Both the local density approximation (LDA) and the generalized gradient approximation (GGA) to density-functional theory were applied.The equilibrium lattice constants and the bulk modulus of a number of structures (NaCl, CsCl, ZnS) were calculated as well as the elastic constants for the structures (NaCl, CsCl). The NaCl structure is found to be the most stable one among all the three phases considered. We have found that the GGA predicts the elastic constants in good agreement with experimental data.Both the LDA and GGA were successful in predicting the location of the band gap at the L point of the Brillouin zone but they are inconclusive regarding the value of the band-gap width. To resolve the issue of the gap, we performed Slater-Koster (SK) tight-binding calculations, including the spin-orbit coupling in the SK Hamiltonian. The SK results that are based on our GGA calculations give the best agreement with experiment.Results are reported for the pressure dependence of the energy gap of these compounds in the NaCl structure. The pressure variation of the energy gap indicates a transition to a metallic phase at high pressure. Band structure calculations in the CsCl structure show a metallic state for all compounds. The electronic band structure in the ZnS phase shows an indirect band gap at the W and X point of the Brillouin zone.     

Structural,elastic, electronic,optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr,Ba)

First-principles calculations were performed to investigate the structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae₃AlAs₃ (Ae = Sr, Ba) using two complementary approaches based on density functional theory. The pseudopotential plane-wave method was used to explore the structural and elastic properties whereas the full-potential linearised augmented plane wave approach was used to study the structural, electronic, optical and thermoelectric properties. The calculated structural parameters are in good consistency with the corresponding measured ones. The single-crystal and polycrystalline elastic constants and related properties were examined in details. The electronic properties, including energy band dispersions, density of states and charge-carrier effective masses, were computed using Tran-Blaha modified Becke-Johnson functional for the exchange-correlation potential. It is found that both studied compounds are direct band gap semiconductors. Frequency-dependence of the linear optical functions were predicted for a wide photon energy range up to 15 eV. Charge carrier concentration and temperature dependences of the basic parameters of the thermoelectric properties were explored using the semi-classical Boltzmann transport model. Our calculations unveil that the studied compounds are characterised by a high thermopower for both carriers, especially the p-type conduction is more favourable.     

Self consistent energy band structures for HgTe and CdTe

Self consistent energy band calculations have been performed for HgTe and CdTe with local density functional potentials, using the LMTO method in the atomic sphere approximation. Equilibrium volumes and bulk moduli are obtained in good agreement with experiment. In the case of HgTe the effect of spin-orbit interation is found to be important in obtaining the equilibrium volume. For both materials the energy bands (although in qualitative agreement with experiment) show a semiconducting gap (inverted in the case of HgTe) which is almost 1 eV lower than experiment. This seems to be a feature common to all calculations for semiconductors using existing local exchange and correlation potentials.     

Electronic structure and elastic properties of scandium carbide and yttrium carbide: A first principles study

We have studied the electronic, structural, and elastic properties of scandium carbide and yttrium carbide by means of accurate first principles total energy calculations using the full-potential linearized plane wave method (FP-LAPW). We have used the generalized gradient approximation (GGA) for the exchange and correlation potential. Volume optimization, energy band structure, and density of states (DOS) of the systems are presented. The second order elastic constants have been calculated and other related quantities such as the Zener anisotropy factor, Poisson's ratio, Young's modulus, Kleinman parameter, Debye temperature, and sound velocities have been determined. The band gap calculation shows that YC is relatively more ionic than ScC.     

Electronic structure of a thermoelectric material: CsBi4Te6

We have calculated the electronic structure of CsBi₄Te₆ by means of first-principles self-consistent total-energy calculations within the local-density approximation using the full-potential linear-muffin-tin-orbital method. From our calculated electronic structure we have calculated the frequency dependent dielectric function. Our calculations shows that CsBi₄Te₆ a semiconductor with a band gap of 0.3 eV. The calculated dielectric function is very anisotropic. Our calculated density of state support the recent experiment of Chung et al. [Science 287 (2000) 1024] that CsBi₄Te₆ is a high performance thermoelectric material for low temperature applications.     

Prediction study of the structural,elastic, electronic and optical properties of the antiperovskite BiNBa3

We use an ab initio full-potential linear muffin-tin orbital method within the local density approximation (LDA) to study the structural, elastic, electronic and optical properties of the antiperovskite BiNBa₃. The calculated lattice parameter is in good agreement with previous calculations. The elastic constants and their pressure dependence are calculated; we found a linear dependence of elastic stiffness on the pressure. We estimated the Debye temperature of this compound from the average sound velocity. We also present results of the effective masses for the electrons in the conduction band (CB) and the holes in the valence band (VB). To complete the fundamental characteristics of this compound we have analyzed the optical properties.     

Local-field corrections to the static dielectric function of semiconductors: A model study

We present results for the macroscopic static dielectric function at small wave vector q for semiconductors, including the local-field corrections (LFCs). We have used the Penn model for our study. Our calculations demonstrate that LFCs depend on the parameters characterizing a semiconductor. Our calculations are in agreement with the calculations based on more detailed band structures.     

Accurate quasiparticle spectra from self-consistent GW calculations with vertex corrections

Self-consistent GW calculations, maintaining only the quasiparticle part of the Green's function G, are reported for a wide class of materials, including small gap semiconductors and large gap insulators. We show that the inclusion of the attractive electron-hole interaction via an effective nonlocal exchange correlation kernel is required to obtain accurate band gaps in the framework of self-consistent GW calculations. If these are accounted for via vertex corrections in W, the band gaps are found to be within a few percent of the experimental values.     

Evolution of Electronic Structure in Titanium Alloys with 3d–5d Transition Metals

Based on numerical calculations of the self-consistent band structure of intermetallic titanium compounds with 3d–5d transition metals of group VIII performed by the full-potential linear augmented-plane-wave method, the specific features of the change in the electronic structure are discussed for a series of isoelectronic compounds and for a variable number of valence electrons. The x-ray emission and absorption spectra and the spectra of characteristic electron losses calculated with allowance for the matrix element of transition probabilities are in good agreement with the experiment.     

Density-functional theory of the Compton profile anisotropy of copper metal

Band structure calculations of the Compton profiles of copper are compared with the experiment in the light of a rigorous interpretation of momentum densities in the Hohenberg-Kohn-Sham ground state density-functional formalism. There are strong evidences that the significant discrepancies for the Compton profile anisotropies do not originate from inaccurate solutions of the Kohn-Sham self-consistent equations, but from a non-local momentum density correlation correction functional.     

Ab initio prediction of conduction band spin splitting in zinc blende semiconductors

We use a recently developed self-consistent GW approximation to present systematic ab initio calculations of the conduction band spin splitting in III-V and II-VI zinc blende semiconductors. The spin-orbit interaction is taken into account as a perturbation to the scalar relativistic Hamiltonian. These are the first calculations of conduction band spin splittings based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. The results are compared to the few available experimental data and a previous calculation based on a model one-particle potential. We also briefly address the widely used k x p parametrization in the context of these results.     

First-principles calculations on implanted TiO<Subscript>2</Subscript> by 3d transition metal ions

3d transition metal (V, Cr and Fe) ions are implanted into TiO₂ by the method of metal ion implantation. The electronic band structures of TiO₂ films doped 3d transition metal ions have been analyzed by ab initio band calculations based on a self-consistent full-potential linearized augmented plane-wave method within the first-principle formalism. Influence of implantation on TiO₂ films is examined by the method of UV-visible spectrometry. The results of experiment and calculation show that the optical band gap of TiO₂ films is narrowed by ion implantation. The calculation shows that the 3d state of V, Cr and Fe ions plays a significant role in red shift of UV-Vis absorbance spectrum.     

Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110)

We propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at the (110) surfaces of III-V semiconductors. We find the (+/0) charge-transition level to be 0.49 eV above the surface valence-band maximum for GaAs(110) and 0.82 eV for InP(110). The results show a clear improvement over the local-density approximation and agree closely with an experimental analysis.     

Pressure effect on the electronic and optical properties of the alkali antimonide semiconductors Cs3Sb, KCs2Sb, CsK2Sb and K3Sb: Ab initio study

We present first principles calculations of the effect of pressure on the electronic and optical properties of the alkali antimonides semiconductors K₃Sb, K₂CsSb, KCs₂Sb and Cs₃Sb by means of the full-potential linearized augmented plane wave method within the generalized gradient approximation. The band gap variation is not linear. The crossover pressure values are determined for K₃Sb and K₂CsSb. Under pressure the structures in the optical spectra shift towards higher energies for K₃Sb and KCs₂Sb whereas the threshold energy is lowered for K₂CsSb and Cs₃Sb. The electronic dielectric constant decreases with pressure for K₃Sb while it increases for the other three compounds. Our results indicate that the absorption becomes strong in the UV region for KCs₂Sb and Cs₃Sb.