Diamagnetic susceptibility of a laser dressed donor in a quantum well

The binding energy of laser dressed donor impurity is calculated under the influence of a magnetic field in a quantum well. The binding energy of the ground state of a donor is investigated, within the single band effective mass approximation, variationally for different concentrations at the well centre. The effect of laser and magnetic fields on diamagnetic susceptibility of the hydrogenic donor is reported. The Landau energy levels of electrons in the quantum well as a function of magnetic field are reported. The results show that the diamagnetic susceptibility (i) decreases drastically as intensity of the laser field increases (ii) increases with the magnetic field strength (iii) decreases as the Al-concentration decreases and (iv) a variation of increase in binding energy is observed when non-parabolicity is included and this effect is predominant for narrow wells. Our results are in good agreement with previous investigations for other heterostructures in the presence of laser intensity.     

Laser dressed donor impurities in free-standing GaAs films under an electric field

The laser-field dependence of the shallow donor states in a free-standing thin GaAs film under an external static field is studied within the effective mass approximation. The laser dressing effects are considered for the confinement potential of the well as well as for the impurity Coulomb interaction distorted by the dielectric mismatch at interfaces. We found that (i) the increase of the laser intensity dramatically modifies the electron potential energy, which establishes the quantum confinement; (ii) the ground state subband energy is significantly enhanced by the electrostatic self-energy arising from the interaction between the electron and its images; (iii) the impurity binding is much larger than those of the dielectrically homogenous case and it becomes stronger sensitive to the laser intensity variation; (iv) under an electric field parallel to the growth direction, the inversion symmetry with respect to the quantum well center is broken and a red/blue-shift of the binding energy, depending on the impurity position along the field direction, occurs. Therefore, the shallow donor energy levels in the free-standing thin films can be tuned in a wide range by proper tailoring of the structure parameters (well size, impurity position) as well as by varying the external applied fields.     

Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential

In this work are studied the intense laser effects on the impurity states in GaAs-Ga_{1− x} Al _x As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction of the quantum well whereas the magnetic field is considered to be in-plane. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included through the Floquet method by modifying the confinement potential associated to the heterostructure. The results are presented for several configurations of the dimensions of the quantum well, the position of the impurity atom, the applied electric and magnetic fields, and the incident intense laser radiation. The results suggest that for fixed geometry setups in the system, the binding energy is a decreasing function of the electric field intensity while a dual monotonic behavior is detected when it varies with the magnitude of an applied magnetic field, according to the intensity of the laser field radiation.     

Binding energy of the donor impurities in GaAs-Ga_(1-x)Al_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

The behavior of a donor in the GaAs–Ga_(1-x)Al_xAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters(De, re, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.     

强外场调控下半导体中浅杂质态的光学吸收特性

理论研究了法拉第位形下强太赫兹激光场、磁场以及压强作用下半导体中浅杂质态非线性光学性质.利用含时非微扰理论——强太赫兹激光场效应被精确包含在激光缀饰库仑势中——和变分法计算出浅杂质态电子能级和波函数,然后基于紧致密度矩阵方法研究强外场和压强对浅杂质态1s→2p_z跃迁的线性、三阶非线性及总的光学吸收系数和折射率变化的影响.研究发现压强和强外场通过激光缀饰库仑势可调控跃迁能和几何因子的增大或减小,所以饱和吸收不但依赖于入射光强和弛豫时间而且还依赖于强外场,在强激光场强度和回旋共振区域附近饱和吸收更容易实现.线性、三阶非线性及总的光学吸收系数和折射率变化的共振峰位置和振幅,在选取合适的外场参数下不但受到强外场的有效调控,而且还受到压强的强烈影响.研究结果为设计强外场调控的新型高效基于杂质电子器件提供了理论支持.     

Hydrostatic pressure and electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in InAs Pöschl-Teller quantum ring

We consider the effects of electric and magnetic fields as well as of hydrostatic pressure on the donor binding energy in InAs Pöschl-Teller quantum rings. The ground state energy and the electron wave function are calculated within the effective mass and parabolic band approximations, using the variational method. The binding energy dependencies on the electric field strength and the hydrostatic pressure are reported for different values of quantum ring size and shape, the parameters of the Pöschl-Teller confining potential, and the magnetic field induction. The results show that the binding energy is an increasing or decreasing function of the electric field, depending on the chosen parameters of the confining potential. Also, we have observed that the binding energy is an increasing/decreasing function of hydrostatic pressure/magnetic field induction. Likewise, the impurity binding energy behaves as an increasing/decreasing function of the inner/outer radii of the quantum ring nanostructure.     

Impurity-related electronic properties in quantum dots under electric and magnetic fields

This paper presents a systematic study of the ground-state binding energies of a hydrogenic impurity in quantum dots subjected to external electric and magnetic fields.The quantum dot is modeled by superposing a lateral parabolic potential,a Gaussian potential and the energies are calculated via the finite-difference method within the effectivemass approximation.The variation of the binding energy with the lateral confinement,external field,position of the impurity,and quantum-size is studied in detail.All these factors lead to complicated binding energies of the donor,and the following results are found:(1) the binding energies of the donor increase with the increasing magnetic strength and lateral confinement,and reduce with the increasing electric strength and the dot size;(2) there is a maximum value of the binding energies as the impurity placed in different positions along the z direction;(3) the electric field destroys the symmetric behaviour of the donor binding energies as the position of the impurity.     

Bound-state perturbation method via SVZ sum rules in quantum mechanics

The perturbation method for bound states within the framework of the Shifman-Vainshtein-Zakharov sum rule method is studied on simple systems (linear harmonic oscillator, hydrogen atom) in external electric fields. It is pointed out that for stronger fields reasonable results for the ground-state energy can only be achieved when sum rules are written for the correction to the Euclidean Green function caused by the external field. Moreover, if the system is bound by a singular (Coulomb) potential, one needs to sum higher perturbative corrections to the Green function and to find a realistic approximation of the continuum contribution to the sum rules. The results are of relevance e.g. for calculations of nucleon magnetic moments and toponium properties via SVZ sum rules in QCD.     

Effect of magnetic field on the impurity binding energy of the excited states in spherical quantum dot

The effect of external magnetic field on the excited state energies in a spherical quantum dot was studied. The impurity energy and binding energy were calculated using the variational method within the effective mass approximation and finite barrier potential. The results showed that by increasing the magnetic field, the energy would be increased. The results obtained by this method were compared with the previous investigations.     

Combined effects of magnetic and electric fields on the interband optical transitions in InAs/InP quantum wire

Combined effects of magnetic and electric fields on the confined exciton in an InAs_1−xP_x/InP (x=0.2) quantum well wire are investigated taking into account the geometrical confinement effect. Variational formulism, within the frame work of effective mass approximation, is applied to obtain the exciton binding energy. The second order harmonic generation and the optical gain are carried out using compact density method. The strain effects are included with the confinement potential in the Hamiltonian. The energy difference of the ground and the first excited state is found in the presence of magnetic and electric fields taking into the consideration of spatial confinement effect. The result shows that the optical properties are more influenced taking into account the effects of geometrical confinement, magnetic field and electric field. It is shown that the telecommunication wavelength can be achieved with the suitable doping barrier material with the wire material and the external perturbations.     

基于超精细结构下的激光光泵铯磁力仪的理论研究

激光光泵碱金属磁力仪具有很高的灵敏度,测量范围可以从地球磁场到生物磁场。给出了铯（Cs）光泵磁力仪的理论分析和系统设计以及磁场梯度测量原理,铯原子能级在I—J耦合时形成超精细结构,在外磁场的作用下超精细结构进一步产生塞曼分裂形成塞曼子能级,利用激光泵浦和射频磁场能够使电子在超精细结构中进行能级跃迁,产生光磁双共振的结果,最终通过共振频率就能够达到精确测量外磁场的目的。     

Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire

The binding energy and the polarizability are estimated for a shallow donor confined to move in a GaAs quantum well wire (QWW) with a rectangular and square cross-section under the action of an axial magnetic field. In this work, the Hass variational method within the effective mass approximation is used in the case of infinite and finite barrier QWWs. We present our results as a function of the size of the wire and for several values of the magnetic field strength. It is found that the magnetic field strongly reduces the polarizability. The finite barrier-height effect is important for smaller well widths. For higher fields and large wire, the effects of the magnetic field are predominant and the barrier potential is a small perturbation.     

磁场下半导体GaAs/AlxGa1-xAs异质结中的杂质态

对异质结势采用三角势近似,考虑屏蔽效应,用变分法讨论磁场下半导体异质结系统中的施主杂质态,数值计算了GaAs/AlxGa_1-xAs单异质结系统中杂质态结合能随磁场的变化关系。结果表明,由于外界磁场使界面附近束缚于正施主杂质的单电子波函数的定域性增强,从而对杂质态的结合能有明显的影响,结合能随磁感应强度的增强而显著增大。还计算了杂质位置、电子面密度产生的导带弯曲以及屏蔽效应诸因素对结合能的影响。结果显示,结合能对电子面密度和杂质位置的变化十分敏感,屏蔽则使得有效库仑吸引作用减弱而导致结合能明显下降。     

外加磁场微波等离子推力器内流场数值模拟

为了提高微波等离子推力器性能，改善等离子体对电磁波能量的吸收状况，提高核心区温度，提出外加磁场的方案，并对热等离子体进行了数值模拟.假设局域热平衡条件，采用Navier-Stokes，Maxwell和Saha方程，利用压力修正的半隐格式和时域有限差分求解方法，建立了径向磁镜场下推力器内等离子体流场的数值计算模型.数值模拟结果表明：外加磁场后的磁感应强度小于0.5 T时，推力器内热等离子体核心区最高温度随磁感应强度的增加而迅速提高.外加磁场后的磁感应强度大于0.5 T时，核心区最高温度随磁感应强度的增加而缓慢提高.磁感应强度为0.5 T时，热等离子体核心区最高温度与不加磁场相比提高了24%.外加磁场对等离子体流场速度分布影响不大. 关键词： 等离子体模拟 等离子体相互作用 等离子体流动     

Magnetic field induced diamagnetic susceptibility of a hydrogenic donor in a GaN/AlGaN quantum dot

The binding energies of a hydrogenic donor in a GaN/AlGaN quantum dot are calculated in the influence of magnetic field. The calculations are carried out using the single-band effective mass approximation within a variational scheme. The magnetic field induced binding energy and diamagnetic susceptibility of the hydrogenic donor are obtained as a function of dot radius. Calculations have been carried out with and without the Zeeman effect through the energy-dependent effective mass. The diamagnetic shift of the hydrogenic donor is found for different dot radii. Our results show that (i) the binding energy is higher for smaller dot radii and the magnetic field effects are predominant for larger dot sizes, (ii) the binding energy is higher when the Zeeman effect is included for all the magnetic fields, (iii) the diamagnetic susceptibility increases with the magnetic field and is not pronounced for smaller dot radii and (iv) the diamagnetic shift has a good influence of larger dot radii.     

Dirac bound states of anharmonic oscillator in external fields

We explore the effect of the external magnetic and Aharonov–Bohm (AB) flux fields on the energy levels of Dirac particle subjects to mixed scalar and vector anharmonic oscillator field in the two-dimensional (2D) space. We calculate the exact energy eigenvalues and the corresponding un-normalized two-spinor-components wave functions in terms of the chemical potential parameter, magnetic field strength, AB flux field and magnetic quantum number by using the Nikiforov–Uvarov (NU) method.     

Hydrostatic pressure,impurity position and electric and magnetic field effects on the binding energy and photo-ionization cross section of a hydrogenic donor impurity in an InAs Pöschl-Teller quantum ring

Using the variational method and the effective mass and parabolic band approximations, the behaviour of the binding energy and photo-ionization cross section of a hydrogenic-like donor impurity in an InAs quantum ring, with Pöschl-Teller confinement potential along the axial direction, has been studied. In the investigation, the combined effects of hydrostatic pressure and electric and magnetic fields applied in the direction of growth have been taken into account. Parallel polarization of the incident radiation and several values of the applied electric and magnetic fields, hydrostatic pressure, and parameters of the Pöschl-Teller confinement potential were considered. The results obtained can be summarised as follows: (1) the influence of the applied electric and magnetic fields and the asymmetry degree of the Pöschl-Teller confinement potential on the donor binding energy is strongly dependent on the impurity position along the growth and radial directions of the quantum ring, (2) the binding energy is an increasing function of hydrostatic pressure and (3) the decrease (increase) in the binding energy with the electric and magnetic fields and parameters of the confinement potential (hydrostatic pressure) leads to a red shift (blue shift) of the maximum of the photo-ionization cross section spectrum of the on-centre impurity.     

Comparative study of magnetic and electric field induced insulator-metal-transitions in Pr1-xCaxMnO3 films

The insulator-metal (IM)-transition in Pr_1-xCa_xMnO₃ (PCMO) is of particular interest because it can be induced by a variety of external forces, such as magnetic and electric fields, photon exposure and hydrostatic pressure. In this paper, we present a comparative study of the IM-transition in magnetic and electric fields for epitaxial thin films prepared by pulsed laser deposition. The transport data as a function of applied field or temperature give strong evidence for the presence of electronic phase separation. However, the observed different IM-transitions in magnetic and electric fields indicate that two different areas of spatially inhomogeneous electronic ground states in the phase diagram of PCMO are involved.     

Magnetic field annihilation and reconnection driven by femtosecond lasers in inhomogeneous plasma

The process of fast magnetic reconnection driven by intense ultra-short laser pulses in underdense plasma is investigated by particle-in-cell simulations. In the wakefield of such laser pulses, quasi-static magnetic fields at a few mega-Gauss are generated due to nonvanishing cross product ▽(n/) × p. Excited in an inhomogeneous plasma of decreasing density, the quasi-static magnetic field structure is shown to drift quickly both in lateral and longitudinal directions. When two parallel-propagating laser pulses with close focal spot separation are used, such field drifts can develop into magnetic reconnection(annihilation) in their overlapping region, resulting in the conversion of magnetic energy to kinetic energy of particles. The reconnection rate is found to be much higher than the value obtained in the Hall magnetic reconnection model. Our work proposes a potential way to study magnetic reconnection-related physics with short-pulse lasers of terawatt peak power only.     

Additional acceleration and collimation of relativistic electron beams by magnetic field resonance at very high intensity laser interaction

For the interpretation of experiments for acceleration of electrons at interaction up to nearly GeV energy in laser produced plasmas, we present a new model using interaction magnetic fields. In addition to the ponderomotive acceleration of highly relativistic electrons at the interaction of very short and very intense laser pulses, a further acceleration is derived from the interaction of these electron beams with the spontaneous magnetic fields of about 100 MG. This additional acceleration is the result of a laser-magnetic resonance acceleration (LMRA) around the peak of the azimuthal magnetic field. This causes the electrons to gain energy within a laser period. Using a Gaussian laser pulse, the LMRA acceleration of the electrons depends on the laser polarization. Since this is in the resonance regime, the strong magnetic fields affect the electron acceleration considerably. The mechanism results in good collimated high energetic electrons propagating along the center axis of the laser beam as has been observed by experiments and is reproduced by our numerical simulations. PACS 41.75.Jv; 52.38.Kd; 52.65.Cc