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飞秒激光脉冲诱导透明介质的非线性吸收和折射率改变轮廓研究 总被引:11,自引:11,他引:0
实验研究了飞秒激光脉冲诱导熔融石英的非线性吸收特性,利用激光诱导自由电子等离子体浓度取决于多光子吸收系数和入射光强的关系;数值模拟了激光诱导折射率变化区域的大小,结合非线性吸收机理和飞秒激光脉冲与介质的相互作用,解释了飞秒激光脉冲超精细加工不受衍射极限的约束,可实现纳米级加工的机理结果表明,电介质的电离能越大,飞秒脉冲诱导的折射率变化区域就越小,但要求的激光脉冲能量也越大;为飞秒激光脉冲超精细加工的材料和激光参量选择提供了理论依据. 相似文献
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为了研究脉冲激光辐照GaAs材料的热效应,采用软件COMSOL Multiphysics构建了高斯脉冲激光辐照半导体材料的温升物理模型,分析了1 064nm纳秒级脉冲激光辐照半导体材料GaAs的热效应.通过求解热传导方程计算了不同功率密度激光辐照GaAs材料的径向与纵向温度场分布,讨论了单光子吸收、双光子吸收及自由载流子吸收对辐照材料的温升贡献.计算结果表明:当激光功率密度升至1010 W/cm2,自由载流子对材料的温升贡献已超过单光子吸收对材料温升的贡献而占主导位置;当激光功率密度降至108 W/cm2以下时,两种非线性吸收对材料温升的贡献可以忽略.该结果与相关实验基本相符,表明了构建的物理模型具有科学性. 相似文献
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几种新型金属配合物热致三阶非线性光学特性 总被引:2,自引:1,他引:1
利用连续激光Z-扫描方法研究了过渡金属Ni、Cu、Pd的新型有机配合物的热致三阶非线性光学特性。结果表明:在488nm和632.8nm波长连续激光激发下,这几种配合物的光学非线性折射主要来源于热效应。并由实验曲线计算了它们的热光系数dn/dT及热致非线性折射率n2。通过比较,发现热致非线性折射率与配合物分子结构、激发波长及在该波长下的线性吸收强弱有关。金属中心原子的原子序数越大,热光系数和折射率也相应的越大。在488nm波长激光激发下的dn/dT和n2大于该配合物在632.8nm波长激发下的dn/dT和n2,在同一波长下,化合物溶液在该波长下的吸收越强,其dn/dT和n2值也越大。 相似文献
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采用飞秒激光脉冲研究聚苯基喹恶啉共轭有机高聚物薄膜中由法布里-珀罗效应产生的光谱的干涉条纹结构,并通过改变脉冲的峰值功率,测到的光谱条纹结构的变化,说明是依赖光强的非线性折射率的变化引起了干涉条纹的改变,通过平均功率不变只改变脉冲峰值功率方法,验证了热效应在干涉条纹的变化中不起主导作用。 相似文献
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在超短飞秒激光技术中,基于Ba F2晶体三阶非线性效应的交叉偏振波技术是目前最重要的提高脉冲时域对比度的手段之一.针对不同入射脉冲强度下入射脉冲的线性啁啾对Ba F2晶体交叉偏振波的输出特性,包括转换效率、光谱加宽和时域压缩的影响进行了详细的数值模拟和讨论.特别地,详细对比研究了非饱和及强入射脉冲情况下线性啁啾对交叉偏振波输出脉冲光谱加宽的影响.结果表明,在强入射脉冲情况下,交叉偏振波的光谱加宽量从非饱和情况下相对于零点线性啁啾时的对称结构,变得不再具有对称性,并对产生非对称性的原因进行了详细的物理解释. 相似文献
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本文研究了倒Y型四能级系统中自发辐射诱导相干对探测场的色散和吸收特性的影响。在稳态条件下利用密度矩阵微扰理论推导出了密度矩阵的迭代解。数值分析了自发辐射诱导相干对线性和非线性折射率和吸收系数的影响,分析了泵浦场和耦合场偏离双光子共振对弱探测场色散和吸收特性的影响。研究发现自发辐射诱导相干使弱探测光的线性和非线性折射率增强,同时形成一个较宽的透明窗。在没有自发辐射诱导相干的情况下,泵浦场和耦合场偏离双光子共振对探测场的线性和非线性折射率影响明显,在有自发辐射诱导相干的情况下,泵浦场和耦合场偏离双光子共振使得探测场的线性透明窗变窄,非线性吸收增加。 相似文献
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利用超短脉冲Z扫描技术和光学Kerr效应研究了以巯基丙酸为稳定剂的CdTe量子点水溶液的三阶光学非线性极化特性. 在532nm,30ps和800nm,130fs脉冲激光激发下, 发现分别具有正负相反取值的三阶光学非线性折射率,自由载流子吸收和双光子吸收分别是这两种脉冲激光激发下三阶光学非线性吸收的起因. 测量得到CdTe量子点的三阶光学非线性极化率约为CS2的32倍, 在520—700nm光谱区的CdTe量子点的光学响应时间小于400fs.
关键词:
CdTe量子点(QDs)
Z扫描
三阶光学非线性极化特性
双光子吸收 相似文献
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在超短飞秒激光技术中, 基于BaF2晶体三阶非线性效应的交叉偏振波技术是目前最重要的提高脉冲时域对比度的手段之一. 针对不同入射脉冲强度下入射脉冲的线性啁啾对BaF2晶体交叉偏振波的输出特性, 包括转换效率、光谱加宽和时域压缩的影响进行了详细的数值模拟和讨论.特别地, 详细对比研究了非饱和及强入射脉冲情况下线性啁啾对交叉偏振波输出脉冲光谱加宽的影响. 结果表明, 在强入射脉冲情况下, 交叉偏振波的光谱加宽量从非饱和情况下相对于零点线性啁啾时的对称结构, 变得不再具有对称性, 并对产生非对称性的原因进行了详细的物理解释. 相似文献
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建立了考虑变截面、变热导率及界面接触热阻效应的组合热整流结构的温度场及热整流系数的理论模型和有限元解.数值算例证明了本文模型及算法的可靠性,进而通过参数影响研究确定了若干几何及材料参数对结构热整流系数的影响规律,揭示界面接触热阻对热整流效果的影响机理.研究结果表明长度比、截面半径变化率、热导率、边界条件温差和界面接触热阻等因素必须通过优化设计才能得到最大的热整流系数,同时界面接触热阻的引入也为调控热整流系数提供了一条新的途径. 相似文献
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Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors
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The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level. 相似文献
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Two-dimensional(2D) materials, such as graphene, phosphorene, and transition metal dichalcogenides(e.g., Mo S2 and WS2), have attracted a great deal of attention recently due to their extraordinary structural, mechanical, and physical properties. In particular, 2D materials have shown great potential for thermal management and thermoelectric energy generation. In this article, we review the recent advances in the study of thermal properties of 2D materials. We first review some important aspects in thermal conductivity of graphene and discuss the possibility to enhance the ultra-high thermal conductivity of graphene. Next, we discuss thermal conductivity of Mo S2 and the new strategy for thermal management of Mo S2 device. Subsequently, we discuss the anisotropic thermal properties of phosphorene. Finally, we review the application of 2D materials in thermal devices, including thermal rectifier and thermal modulator. 相似文献
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Bidirectional and Unidirectional Negative Differential Thermal Resistance Effect in a Modified Lorentz Gas Model
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Recently,the negative differential thermal resistance effect was discovered in a homojunction made of a negative thermal expansion material,which is very promising for realizing macroscopic thermal transistors.Similar to the Monte Carlo phonon simulation to deal with grain boundaries,we introduce positive temperature-dependent interface thermal resistance in the modified Lorentz gas model and find negative differential thermal resistance effect.In the homojunction,we reproduce a pair of equivalent negative differential thermal resistance effects in different temperature gradient directions.In the heterojunction,we realize the unidirectional negative differential thermal resistance effect,and it is accompanied by the super thermal rectification effect.Using this new way to achieve high-performance thermal devices is a new direction,and will provide extensive reference and guidance for designing thermal devices. 相似文献
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Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement
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Norazlina M S Dheepan Chakravarthii M K Shanmugan S Mutharasu D Shahrom Mahmud 《中国物理 B》2017,26(9):98901-098901
Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor (MOSFET) is an important semiconductor device for light emitting diode-integrated circuit (LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester (T3ster) at 2.0 A input current and ambient temperature varying from 25 ℃to 75 °C. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance. 相似文献
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为了确定超光谱成像仪热控指标和开展热设计,研究了超光谱成像仪中棱镜的热光谱特性。介绍了超光谱成像仪的工作原理以及热光谱特性的含义,分析了棱镜的环境热效应,论述了棱镜热光谱特性研究内容及技术路线,推导了温度变化时棱镜偏转角以及角色散的函数关系,进一步得到光谱中心平移及光谱带宽随温度变化规律。借助有限元分析,比较了K9、熔石英两种材料的棱镜的入射角、顶角、材料色散、光谱中心平移及光谱带宽随温度变化规律,确定了棱镜的热控指标,并设计了热光谱试验。理论分析和试验结果表明由于热变形引起的光谱带宽和光谱分辨率改变可以忽略不计,光谱平移主要由材料折射率温度系数决定;棱镜材料色散(dn/dλ)对温度变化不敏感,因此温度变化对其光谱带宽影响不明显; 本文研究方法合理,结果可信,对确定棱镜的热控指标和优化热设计具有指导意义。 相似文献
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对LD泵浦的掠入射板条放大器链系统激光介质的热效应进行研究。针对掠入射放大器结构建立了相应的热力学模型,对激光介质的温度场分布、热致波前畸变和热透镜效应进行了详细的理论分析。利用有限元分析软件COMSOL模拟了晶体内部的温度、应力及应变的分布情况,并进一步讨论了板条厚度、泵浦尺寸以及种子光入射角对光程差和热透镜造成的影响。结果表明,随着泵浦光斑尺寸和种子光入射角的增大,光程差变小,热透镜效应减弱;板条厚度对光程差和热透镜的影响较小。模拟计算结果对于预测板条热效应的强弱、热效应的补偿,以及放大器链结构参数的设计提供了依据。 相似文献
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