微机构可调谐阵列滤光片的有限元分析

提出一种新颖的采用薄膜技术在玻璃基底上构造微机可调谐二维窄带滤光片阵列的方法，在有限元分析的基础上，计算出器件在静电力作用下三维变曲面结果，并模拟了通过透光谱特性。     

微机构可调谐阵列滤光片的设计与模型分析

提出一种新颖的采用薄膜技术在玻璃基底上构造微机可调谐二维窄带滤光片阵列的方法,对器件进行了膜系设计及光谱响应模拟,通过器件的电动力学模型分析,设计出器件的形状与尺寸。     

微机构可调谐阵列滤光片的设计与模型分析

提出一种新颖的采用薄膜技术在玻璃基底上构造微机构可调谐二维窄带滤光片阵列的方法对器件进行了膜系设计及光谱响应模拟通过器件的电动力学模型分析,设计出器件的形状与尺寸     

腔内有双折射滤光片的激光实际线宽

在研制高效宽带增益激光非线性频率转化的实验中发现,由双折射滤光片透过率计算出的激光输出频谱宽度比激光器实际频谱宽度要大一个数量级左右.考虑到激光模式竞争和均匀增宽效应,理论上提出了一个精确计算激光器实际频谱线宽的模型.用该模型模拟的带不同厚度双折射滤光片的调Q运转钛宝石激光器的光谱宽度与实验结果一致,这为优化设计双折射滤光片及该类激光器提供了依据.     

可调谐液晶法-珀滤光片的研究

提出了一种可用于密集波分复用系统中的新型可调谐滤光片的设计方法,该设计利用了液晶的双折射现象,以及液晶盒内法-珀效应,从理论上分析了器件的光谱特性,计算了液晶分子的折射率调制和其分子转动角度的关系.并对器件进行了性能测试.实验结果与理论吻合较好.     

致冷多层干涉滤光片的光学特性

本文系统地研究了红外多层干涉滤光片的低温特性、并从薄膜的基本光学特性出发,推导了窄带滤光片、截止滤光片透射率与波长的温度效应.给出了截止滤光片截止波长的温度漂移公式.     

一种新型三端口可调带通滤波器的结构设计及分析

研制了一种基于DWDM角度调谐薄膜滤光片的新型三端口可调带通光学滤波器,它由三个单芯光纤准直器和一片特别设计的角度调谐窄带多腔薄膜滤光片组成.通过一台步进电机控制滤光片的入射角度实现了可调谐滤波,同时对于剩余波长信号没有影响继续传输.对该三端口可调滤波器进行了理论计算和实验研究,并对该器件的串扰特性进行了详细分析与计算.实验中得到的相邻信道隔离度接近30 dB,可调谐范围大于26 nm,与理论设计较为一致.     

基于菁染料的近红外吸收滤光片夜视兼容性能研究

近红外吸收滤光片可以用于夜视兼容照明器件.为了研制夜视兼容近红外吸收滤光片,将一种菁染料均匀掺杂在透明塑料聚甲基丙烯酸甲酯(PMMA)中制备了近红外吸收滤光片,研究了菁染料的掺杂量对近红外吸收滤光片夜视兼容能力的影响.结果表明,随着菁染料掺杂量的增加,近红外吸收滤光片的可见光透过率逐渐下降,在近红外区域的吸收能力逐渐增加,光谱辐亮度夜视兼容值逐渐减小且朝着有利于满足夜视兼容要求的方向移动;将菁染料与普通塑料用染料透明黄GS、透明蓝AP-FW配合使用,成功制备出了一种绿色夜视兼容近红外滤光片,该滤光片不仅颜色满足军标中夜视绿A的要求,光谱辐亮度夜视兼容值为9.22×10-12,满足军标中对光谱辐亮度的要求,而且具备优异的光稳定性能.     

基于梳状小波理论的颜色滤光片设计

渐变折射率薄膜因为消除了界面而克服了传统的分层介质膜的固有弊端。探讨了一种基于这种渐变膜系的设计方法。从小波理论及渐变折射率增透理论出发,以分层介质高反膜系为参照,给出了采用梳状(Rugate)滤光片设计不同类型颜色滤光片的设计原理,并以目前背投系统中使用的红、绿、蓝颜色滤光片为指标,理论设计出了具有优良光谱特性的红、绿、蓝颜色滤光片;对该设计结果进行了角度敏感性分析、偏振效应分析并与传统的反射膜叠加法得到的分层膜系进行比较,发现通过梳状滤光片理论设计的滤光片较传统的多层膜滤光片具有更小的角度敏感性和较小的偏振效应。     

基于AlN声表面波滤波传感器器件的有限元仿真

声表面波器件是一种利用压电材料的压电效应与逆压电效应工作电子器件, 文章首先详细描述了声表面波器件的设计与仿真过程,运用有限元分析的方法分别计算了利用声表面波的 SAW 器件与利用体波的 BAW 器件的性能与各项参数,对相关的器件进行了计算分析,分别用上述方法研究了基于 AlN 薄膜的声表面波器件和悬臂梁结构的体波器件,推导得出了器件的电学导纳与频率之间的关系, 通过分析器件的导纳-频率曲线,推导出器件内部声波的模式以及合适的工作频率,最终得出在 IDT 周期为 8 微米的情况下,SAW 器件的理想工作频率是 0.7-1.95GHz,BAW 器件的理想工作频率在 0.6-3.2GHz 的结果。     

Photocurrent properties of high—sensitivity GaN ultraviolet photodetectors

GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal－semiconductor－metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.     

基于LabVIEW的短波红外焦平面相对响应光谱测试系统

搭建了一套适用于短波红外焦平面的相对响应光谱自动测试系统。系统测试程序在LabVIEW虚拟仪器开发环境下完成,具备光栅单色仪的控制、数据采集处理与存储等功能。系统采用单光路标准代替法实现了相对响应光谱的校准。测试了InGaAs短波红外线列焦平面,得到了每个像元校准后的相对响应光谱,提取了峰值波长、截止波长等参数在线列上的分布情况,实现了对焦平面全像元的相对响应光谱测试。     

Experimental investigation of cutoff phenomena in nonlinear photonic crystal fibers

Modal cutoff is investigated experimentally in a series of high-quality nonlinear photonic crystal fibers. We demonstrate a suitable measurement technique with which to determine the cutoff wavelength and verify the technique by inspecting the near field of the modes that may be excited below and above the cutoff. We observe a double-peak structure in the cutoff spectra, which is attributed to splitting of the higher-order modes. The cutoff is measured for seven different fiber geometries with different pitches and relative hole sizes, and very good agreement with recent theoretical work is found.     

Material considerations for third generation infrared photon detectors

In the paper, issues associated with the development and exploitation of materials used in fabrication of third generation infrared photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum well photoconductors are considered. The performance figures of merit of state-of-the-art HgCdTe and QWIP focal plane arrays (FPAs) are similar because the main limitations come from the readout circuits. The metallurgical issues of the epitaxial layers such as uniformity and number of defected elements are the serious problems in the case of long wavelength infrared (LWIR) and very LWIR (VLWIR) HgCdTe FPAs. It is predicted that superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an alternative to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 μm. In this context the material properties of type II superlattices are considered more in detail.     

Competitive technologies of third generation infrared photon detectors

Hitherto, two families of multielement infrared (IR) detectors are used for principal military and civilian infrared applications; one is used for scanning systems (first generation) and the other is used for staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding, third generation IR systems provide enhanced capabilities like larger number of pixels, higher frame rates, better thermal resolution as well as multicolour functionality and other on-chip functions. In the paper, issues associated with the development and exploitation of materials used in fabrication of third generation infrared photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum well IR photoconductors (QWIPs) are considered. The performance figures of merit of state-of-the-art HgCdTe and QWIP focal plane arrays (FPAs) are similar because the main limitations come from the readout circuits. However, the metallurgical issues of the epitaxial layers such as uniformity and number of defected elements are the serious problems in the case of long wavelength infrared (LWIR) and very LWIR (VLWIR) HgCdTe FPAs. It is predicted that superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 μm.     

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Using double heterojunction structure with linearly graded In_xAl_1–xAs as buffer layer and In_0.9Al_0.1As as cap layer, wavelength extended In_0.9Ga_0.1As detectors with cutoff wavelength of 2.88 μm at room temperature have been grown by using gas source molecular beam epitaxy, their characteristics have been investigated in detail and compared with the detectors cutoff at 2.4 μm with similar structure as well as commercial InAs detectors. Typical resistance area product R₀A of the detectors reaches 3.2 Ω cm² at 290 K. Measured peak detectivity reaches 6.6E9 cm Hz^1/2/W at room temperature.     

Cutoff wavelength of single-mode fibers: Definition, measurement, and length and curvature dependence

The cutoff wavelength λ_c as defined by the CCITT can be defined equivalently as that wavelength for which the attenuation of the second-order LP₁₁ mode is 19.34 dB higher than the attenuation of the fundamental mode. This equivalent definition of λ_c does not depend on the length and curvature of the fiber. Both measuring methods for λ_c, the bending method and the multimode reference method, are analyzed and the measurement conditions that lead to the CCITT cutoff wavelength are indicated. The bend attenuation of the second-order mode of a typical matched-cladding, step-index fiber is calculated numerically, and methods are described to determine the length and curvature dependence of the cutoff wavelength from the bend loss data.     

1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响

 研究了1 MeV电子辐照对短波Hg_1-xCd_xTe光伏探测器的影响。通过测试电子辐照前后光伏探测器的响应光谱、信号、噪声、暗电流等性能参数，分析了电子辐照对Hg_xCdxTe光伏器件的影响机制。实验结果发现：电子辐照后器件响应光谱在短波处有变窄的趋势，但响应峰值波长和截止波长基本无变化；随着辐照剂量的增加，通过p-n结的暗电流有所增加，光伏器件的探测率有减小的趋势。     

One-mode model for patterned metal layers inside integrated color pixels

Optimized design of the optical filters inside integrated color pixels (ICPs) for complementary metal-oxide semiconductor image sensors requires analytical models. ICP optical filters consist of subwavelength patterned metal layers. We show that a one-mode model, in which subwavelength gaps in the metal layer are described in terms of single-mode waveguides, suffices to predict the salient features of measured ICP wavelength selectivity. The Airy-like transmittance formula, derived for transverse-electric polarization, predicts an angle-independent cutoff wavelength, which is in good agreement with predictions made with a two-dimensional finite-difference time-domain method.