Ripple surface generated on hydrogenated amorphous carbon nitride films

It is reported for the first time that the periodical ripple surface feature at micrometer-scale was observed on hydrogenated amorphous carbon nitride films deposited by pulse plasma chemical vapor deposition (CVD) technique. Nitrogen incorporation to hydrogenated amorphous carbon films and the different growing environments of pulse dc plasma discharge perhaps played crucial role in the surface morphology transformation of hydrogenated amorphous carbon nitride films.     

The effect of hydrogen dilution on the field emission from hydrogenated amorphous carbon films

The microstructures and field emission characteristics of hydrogenated amorphous carbon films prepared by using different hydrogen dilution ratio were investigated. It was found that a very low threshold electric field emission could be achieved for samples with moderated hydrogen dilution ratio. However, the field emission characteristics became worse for samples with high hydrogen dilution ratio. The change of field emission can be attributed to the change of electronic structures due to the hydrogen dilution in addition to the increase of the hydrogen surface termination.     

Spectral variations in the optical transition matrix element and their impact on the optical properties associated with hydrogenated amorphous silicon

Using an empirical model for the density of states functions associated with hydrogenated amorphous silicon, in conjunction with an elementary model for the optical transition matrix elements, we aim to explore how variations in the matrix elements impact upon the spectral dependence of the optical properties associated with this material. We also wish to ascertain as to whether or not the hydrogenated amorphous silicon mobility gap result suggested by Jackson et al. [W.B. Jackson, S.M. Kelso, C.C. Tsai, J.W. Allen, S.-J. Oh, Phys. Rev. B 31 (1985) 5187] is consistent with the results of the experiment. We find that the mobility gap value suggested by Jackson et al. is too large. An upper bound on the mobility gap associated with hydrogenated amorphous silicon of 1.68 eV is suggested instead. Electrical measurements performed on undoped hydrogenated amorphous silicon yield a mobility gap value that is consistent with this bound.     

Photoelectron spectroscopic characterization of titanium-containing amorphous hydrogenated silicon–carbon films (aSi1-xCx:H/Ti)

Titanium-containing amorphous hydrogenated silicon–carbon films (aSi_1-xC_x:H/Ti) have been deposited by reactive magnetron cosputtering. Core-level photoelectron spectroscopy (XPS) and valence-band photoelectron spectroscopy (UPS) have served as means for the characterization of these films. The spectroscopic data are interpreted by a structural model on the basis of a nanocomposite containing clusters of a Ti-C-Si alloy being embedded in an amorphous hydrogenated silicon–carbon matrix (aSi_1-xC_x:H). The Ti-C-Si compound is of metallic character and most likely a substitutional solid solution. This novel nanocomposite material is a promising candidate for applications, especially as optical selective absorber coating for solar collectors. Received: 10 July 2000 / Accepted: 15 September 2000 / Published online: 21 March 2001     

非晶碳氮纳米尖端的微结构和发光机理

利用等离子体增强热丝化学气相沉积系统,用CH₄、H₂和N₂为反应气体,在Si衬底上制备了碳氮纳米尖端。用扫描电子显微镜和显微Raman光谱仪对其进行了表征。在室温下测试了它的发光性能,发光谱由中心约为406 nm和506 nm的两条发光带组成。根据Raman散射谱,对其微结构进行了分析。结合非晶碳氮薄膜的结构和发光机理,分析了它的发光性能。     

An alternative procedure for the determination of the optical band gap and thickness of amorphous carbon nitride thin films

In this work, we propose an alternative procedure to obtain the optical band gap and the thickness of amorphous carbon nitride thin films that requires only the measurement of the absorbance spectrum of the samples. The method is based on an absorbance spectrum fitting (ASF) procedure using the Tauc model, which is widely applied to the study of amorphous semiconductors. With the aim of evaluating the proposed method two sets of carbon nitride samples deposited on glass substrates were analyzed; one prepared by pulsed laser ablation (PLA) and the second by magnetron sputtering. The obtained results using different conventional methods were compared with the results of the ASF method and a good agreement between the values and the tendencies with the experimental conditions used to prepare the films were observed.     

First-principles density-functional calculations on the field emission properties of BN nanocones

The first-principles density-functional theory is used to study the geometrical structures and field emission properties of different boron nitride nanocones with 240 disclination. It is found that the nanocones can be stable under applied electric field and the emission current is sensitively dependent on the tips of nanocones. The nanocones with homonuclear bonds at the tip can introduce additional energy states near Fermi level, which can reduce the ionization potential and increase the emission current of these boron nitride nanocones. This investigation indicates that the boron nitride nanocone can be a promising candidate as a field emission electron source.     

Diagnostics of CH4 plasmas used for diamond-like carbondeposition

Spatially resolved optical emission spectroscopy was used to study asymmetric low-frequency (LF) (25-50 kHz) and radio-frequency (RF) (13.56 MHz) discharges in methane used to deposit hard, hydrogenated carbon films. The optical data in conjunction with ion flux, electron density, and deposition rate measurements show that the processes due to fast electrons are of major importance for the deposition of amorphous C:H. Optical monitoring of the spectrum of the species and correlation with the deposition process are effective if the region close to the substrate is sampled. Both discharges lead to hard carbon films if the substrate is on the powered (hot) electrode. Deposition on the ground electrode of the 13.6-MHz discharge leads to highly hydrogenated carbon films as a result of the strong asymmetry, lower ion flux, and absence of fast electron processes     

A new photoluminescence emission peak of ZnO-SiO2 nanocomposites and its energy transfer to Eu ions

This work reports a new photoluminescence (PL) emission peak at about 402 nm from amorphous ZnO nanoparticles in a silica matrix, and the energy transfer from it to Eu³⁺ ions. The amorphous ZnO-SiO₂ nanocomposites were prepared by the sol-gel method, which is verified by X-ray diffraction (XRD) profiles and FT-IR spectra. The luminescence emission spectra are fitted by four Gauss profiles, two of which at longer wavelength are due to the defects of the material and the others to amorphous ZnO nanoparticles and the Zn-O-Si interface state. With the reduction of Zn/Si ratio and diethanolamine, the relative intensities of visible emission decrease. The weak visible emission is due to the reduction of defects after calcined at high temperature. The new energy state at the Zn-O-Si interface results in strong emission at about 402 nm. When Eu³⁺ ions are co-doped, weak energy transfer from ZnO-SiO₂ nanocomposites to Eu³⁺ emission are observed in the excitation spectra.     

Amorphous BeN as a new solid host for rare‐earth‐related luminescent materials

Beryllium‐nitride (BeN) thin films were prepared by sputtering a Be target in an atmosphere of pure nitrogen. The films were doped with samarium simply by placing a piece of Sm metal on the surface of the Be target. Under these deposition conditions the films present an amorphous structure and an optical bandgap of approx. 4 eV. They also exhibit visible light emission due to Sm³⁺ ions as a result of either photon or electron excitation. The present experimental results show that amorphous BeN films are suitable, and efficient, III‐nitride hosts for rare‐earth doping purposes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The role that conduction band tail states play in determining the optical response of hydrogenated amorphous silicon

We aim to explore the role that conduction band tail states play in shaping the optical response of hydrogenated amorphous silicon. We do so within the framework of an empirical model for the valence band and conduction band density of states functions, one that considers valence band band, valence band tail, conduction band band, and conduction band tail states. We examine the sensitivity of the joint density of states function to variations in the conduction band tail breadth, all other parameters being held fixed at their nominal hydrogenated amorphous silicon values. We find that when the conduction band tail is narrower than the valence band tail, its role in shaping the corresponding spectral dependence of the joint density of states function is relatively minor. This justifies the use of a simplified empirical model for the density of states functions that neglects the presence of the conduction band tail states in the characterization of the optical response of this material. Experimental data corresponding to hydrogenated amorphous silicon, demonstrating that the conduction band tail breadth is always less than the valence band tail breadth for this material, is then presented. Finally, fundamental reasons for the observed asymmetry in the band tail breadths are reviewed.     

Structure and mechanical properties of titanium nitride/carbon nitride multilayers

The structure and mechanical properties of the multilayers consisting of 5-73 nm thick titanium nitride (TiN) and 4.6 nm thick carbon nitride (CN) have been investigated. It has been found that the CN layers are amorphous and the TiN layers thinner than 17 nm are amorphous. The TiN layers become crystallized as the thickness is increased to 30 nm or thicker. The hardness from the composite response of the multilayered films and their substrates determined using continuous stiff measurement is smaller than the film-only hardness (without substrate effects) calculated using Bhattacharya-Nix empirical equation. The hardness increases with raising the thickness of TiN layers. With the crystallization of the TiN layer, the multilayers become even harder than that calculated based on the rule of mixtures. However, no enhancement in hardness has been observed when the TiN layers are amorphous.     

Thermomechanical properties of amorphous hydrogenated carbon–germanium alloys

Thermomechanical properties of amorphous hydrogenated carbon-germanium alloys prepared by the rf sputtering technique were determined for films in the 0 at. % to 100 at. % carbon content range. The stress, thermal expansion coefficient, and elastic modulus were obtained using the thermally induced bending technique. The stress was related to the concentration of hydrogen and argon, to the difference in the Ge-Ge and Ge-C bond length, and to the carbon hybridization. The thermal expansion coefficients of pure amorphous germanium and amorphous carbon are higher than that of their corresponding crystalline counterparts, which was attributed to the compressive stress of the films. The biaxial modulus, on the other hand, are always smaller than that of their crystalline counterparts, but increases as the concentration of carbon increases due to the substitution of Ge-Ge bonds by energetically stronger Ge-C and C-C bonds. Received: 9 May 2000 / Accepted: 10 May 2000 / Published online: 13 July 2000     

Controllable synthesis and Photoluminescence (PL) of amorphous and crystalline carbon nanoparticles

Carbon nanoparticles with both amorphous and crystalline structures have been prepared by irradiating carbon black in absolute ethanol using millisecond-pulsed laser. The structures of carbon nanoparticles produced in the experiment are determined by laser power density. Amorphous nanoparticles (A-nanoparticles) can be produced below 10⁵ W/cm² while the formation of crystalline nanoparticles (C-nanoparticles) requires above 10⁶ W/cm². Both A- and C-nanoparticles can emit strong visible light, but A-nanoparticles show multiband emission in the blue region. The possible formation mechanism of A- and C-nanoparticles and the origin of their luminescence are given in the paper.     

Field emission from a-GaN films deposited on Si (100)

Amorphous gallium nitride (a-GaN) films have been deposited on Si (100) substrates using ion-assisted deposition. The deposited films were characterised by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD confirms the amorphous nature of the films and AFM showed nanostructures in the films. The field electron emission from the film was obtained in a probe-hole field emission microscope, and the current-voltage (I-V) characteristics were studied. The corresponding Fowler-Nordheim (F-N) plots showed a linear behaviour. A current density of 0.1 A/cm² has been obtained for 1.2 V/μm electric field. The field emission current-time (I-t), curves were recorded at a current level of 500 nA for 3 h. The field emission behaviour is compared with that of crystalline GaN as reported in literature.     

镶嵌有纳米硅的氮化硅薄膜键合特性分析

采用螺旋波等离子体化学气相沉积(HWPCVD)技术制备了非化学计量比的氢化氮化硅薄膜,对所沉积样品及氮气环境中920 ℃退火样品的微观结构及键合特性进行了分析。Raman散射结果表明,薄膜中过量硅以非晶纳米粒子形式存在,退火样品呈现纳米晶硅和氮化硅的镶嵌结构。红外吸收和可见光吸收特性比较结果显示,薄膜样品的微观结构依赖于化学计量比以及退火过程,硅含量较低样品因高的键合氢含量而表现出低的纳米硅表面缺陷态密度;退火过程将引起Si—H和N—H键合密度的减少,因晶态纳米颗粒的形成,退火样品表现出更高的结构无序度。     

Laser annealing study of PECVD deposited hydrogenated amorphous silicon carbon alloy films

The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well as for the hydrogenated microcrystalline silicon carbon alloy films prepared by PECVD from silane methane gas mixture highly diluted in hydrogen, for comparison. The study demonstrates clearly that the increase in the carbon content prevents the crystallization process in the hydrogen diluted samples while the crystallization process is enhanced in the laser annealing of amorphous samples because of the increase in the absorbed laser energy density that occurs for the amorphous films with the higher carbon content. This, in turn, facilitates the crystallization for the laser annealed samples with higher carbon content, resulting in the formation of SiC crystallites along with Si crystallites.     

Strong Green Light Emission from Low-Temperature Grown a-SiNx:H Film after Different Oxidation Routes

Room-temperature deposited amorphous silicon nitride （a-SiNx ：H） films exhibit intense green light emission after post-treated by plasma oxidation, thermal oxidation and natural oxidation, respectively. All the photoluminescence （PL） spectra are peaked at around 500nm, independent of oxidation method and excitation wavelength. Compared with the PL results from oxidized a-Si：H and as-deposited a-SiNx：H samples, it is indicated that not only oxygen but also nitrogen is of an important role in enhancing light emission from the oxidized a-SiNx：H. Combining the PL results with the analyses of the bonding configurations as well as chemical compositions of the films, the strong green light emission is suggested to be from radiative recombination in luminescent centres related to N Si-O bonds.     

Amorphous carbon

The properties of various types of amorphous carbon and hydrogenated amorphous carbon are reviewed with particular emphasis on the effect of atomic structure on the electronic structure. It is shown how the proportion of sp³ and sp² sites not only defines the short-range order but also a substantial medium-range order. Medium-range order is particularly important in amorphous carbon because it is the source of its optical gap, whereas short-range order is usually sufficient to guarantee a gap in other amorphous semiconductors. The review discusses the following properties: short-range order and the radial distribution function, the infrared and Raman spectra, mechanical strength, the electronic structure, photoemission spectra, optical properties, electron energy-loss spectra, core-level excitation spectra, electrical conductivity, electronic defects and the electronic doping of hydrogenated amorphous carbon.