Nanotextured multicrystalline Al‐BSF solar cells reaching 18% conversion efficiency using industrially viable solar cell processes

We report recent achievements in adapting industrially used solar cell processes on nanotextured surfaces. Nanostructures were etched into c‐Si surfaces by dry exothermic plasma‐less reaction of F species with Si in atmospheric pressure conditions and then modified using a short post‐etching process. Nanotextured multicrystalline wafers are used to prepare Al‐BSF solar cells using industrially feasible solar cell proc‐ essing steps. In comparison to the reference acidic textured solar cells, the nanostructured cells showed gain in short circuit current (J_sc) of up to 0.8 mA/cm² and absolute gain in conversion efficiency of up to 0.3%. The best nanotextured solar cell was independently certified to reach the conversion efficiency of 18.0%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO3 as hole injection agent

In this study, metal‐assisted etching (MAE) with nitric acid (HNO₃) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO₃ enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO₂/PECVD‐SiN_x stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, j_sc enhancement of 0.9 mA/cm² and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.

J –V curves and SEM images of the nano and iso‐textured samples. j_sc enhancement of 0.9 mA/cm² together with 0.6% absolute efficiency gain was observed on nano‐textured samples.     

21.63% industrial screen‐printed multicrystalline Si solar cell

In this paper, we demonstrate industrially feasible large‐area solar cells achieving energy conversion efficiency up to 21.63% on p‐type boron doped multicrystalline Si wafers. Advanced light trapping, passivation and hydrogenation technology are used to achieve excellent light absorption with very low surface recombination velocity. The bulk lifetime of the multi‐crystalline Si wafers used for the fabrication exceeds 500 μs after optimized gettering and hydrogenation processes. The high bulk lifetime and excellent surface passivation enable V_oc to exceed 670 mV. The metallization process is carried out by screen printing and firing in a conventional belt furnace. Detailed performance parameters and quantum efficiency of the cells will be illustrated in the paper. In addition, free energy loss analysis and cell simulation are also performed using the control parameters measured during cell fabrication processes.     

Investigation of defect luminescence from multicrystalline Si wafer solar cells using X‐ray fluorescence and luminescence imaging

Multicrystalline silicon wafer solar cells reveal performance‐ reducing defects by luminescence. X‐ray fluorescence spectra are used to investigate the elemental constituents from regions of solar cells yielding reverse‐bias or sub‐bandgap luminescence from defects. It is found that a higher concentration of metals is present in regions yielding reverse‐bias electroluminescence than in regions yielding sub‐bandgap electroluminescence. This suggests, dislocations do not create strong breakdown currents in the absence of impurity precipitates.

     

Formation of a honeycomb texture for multicrystalline silicon solar cells using an inkjetted mask

An effective way to reduce the reflection of a multicrystalline solar cell is the use of a honeycomb structure, which can be generated by etching a mask isotropically. In this Letter, a directly printed hexagonal inkjet mask is presented. It results in a honeycomb texture with well developed and defined etch pits at an average distance of 50.1 μm and a weighted reflection of 18.4%. The major advantage of this mask is that the masking process is simple and that it has the potential of being fast and having low costs.

     

Light‐induced degradation and regeneration of multicrystalline silicon Al‐BSF and PERC solar cells

Light‐induced degradation (LID) is a well‐known problem faced by p‐type Czochralski (Cz) monocrystalline silicon (mono‐Si) wafer solar cells. In mono‐Si material, the physical mechanism has been traced to the formation of recombination active boron‐oxygen (B–O) complexes, which can be permanently deactivated through a regeneration process. In recent years, LID has also been identified to be a significant problem for multicrystalline silicon (multi‐Si) wafer solar cells, but the exact physical mechanism is still unknown. In this work, we study the effect of LID in two different solar cell structures, aluminium back‐surface‐field (Al‐BSF) and aluminium local back‐surface‐field (Al‐LBSF or PERC (passivated emitter and rear cell)) multi‐Si solar cells. The large‐area (156 mm × 156 mm) multi‐Si solar cells are light soaked under constant 1‐sun illumination at elevated temperatures of 90 °C. Our study shows that, in general, PERC multi‐Si solar cells degrade faster and to a greater extent than Al‐BSF multi‐Si solar cells. The total degradation and regeneration can occur within ～320 hours for PERC cells and within ～200 hours for Al‐BSF cells, which is much faster than the timescales previously reported for PERC cells. An important finding of this work is that Al‐BSF solar cells can also achieve almost complete regeneration, which has not been reported before. The maximum degradation in Al‐BSF cells is shown to reduce from 2% (relative) to an average of 1.5% (relative) with heavier phosphorus diffusion.     

Wafer thickness optimization for silicon solar cells of heterogeneous material quality

In this Letter, we introduce a method of calculating the optimal wafer thickness for silicon solar cells with multicrystalline bulk material. The optimal thickness depends on the relation of bulk recombination to surface recombination and the light trapping. For multicrystalline silicon bulk recombination strongly varies laterally and with injection level, which complicates the calculations. A thickness optimization using the “Efficiency Limiting Bulk Recombination Analysis” (ELBA) takes all these effects correctly into account. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.     

The BOSCO solar cell – a both sides collecting and contacted structure

The BOSCO solar cell represents a bifacial structure with double‐sided collection. The structure allows the use of standard module interconnection technology and favours the use of material with low to medium diffusion length and low resistivity for maximum benefit towards other structures, such as Al‐BSF and PERC. Within this work, we present first results on different multicrystalline silicon materials yielding a monofacial efficiency of 17.4% on large‐area wafers from block‐cast mc‐Si. This value represents a gain of ～0.7%_abs compared to Al‐BSF cells processed in parallel. The applicability for bifacial operation is demonstrated by a significantly increased quantum efficiency for rear side illumination. These results make the BOSCO solar cell concept a promising candidate to further boost the output of utility‐scale PV plants even when using low‐cost wafers of low to medium diffusion length material.

     

Light‐induced degradation of PECVD aluminium oxide passivated silicon solar cells

Light‐induced degradation (LID) has been identified to be a critical issue for solar cells processed on boron‐doped silicon substrates. Typically, Czochralski‐grown silicon (Cz‐Si) has been reported to suffer from stronger LID than block‐cast multicrystalline silicon (mc‐Si) due to higher oxygen concentrations. This work investigates LID under conditions practically relevant under module operation on different cell types. It is shown that aluminium oxide (AlOx) passivated mc‐Si solar cells degrade more than a reference aluminium back surface field mc‐Si cell and, remarkably, an AlOx passivated Cz‐Si solar cell. The defect which is activated by illumination is shown to be doubtful a sole bulk effect while the AlOx passivation might play a certain role. This work may contribute to a re‐evaluation of the suitability of boron‐doped Cz‐ and mc‐Si for solar cells with very high efficiencies. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Nano‐glass frit for inkjet printed front side metallization of silicon solar cells prepared by sol–gel process

Sol–gel derived nano‐sized glass frits were incorporated into the Ag conductive ink for silicon solar cell metallization. This mixture was specifically formulated for inkjet printing on textured Si wafers with 80 nm thick SiN_x anti reflection coating layers. The correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy and transmission electron microscopy. In addition, the specific contact resistance between the front contact and emitter was measured at various firing conditions using the transfer length model. On an emitter with the sheet resistance of 60 Ω/sq, a specific contact resistance below 5 mΩ cm² could be achieved at a peak firing temperature around 800 °C. We found that the incorporated nano‐glass frit act as a very effective fire through agent, and an abundant amount of Ag crystallites was observed along the interface glass layer. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

晶体硅太阳电池表面纳米线阵列减反射特性研究

为增强晶体硅太阳电池的光利用率, 提高光电转换效率, 研究了硅纳米线阵列的光学散射性质. 运用严格耦合波理论对硅纳米线阵列在310—1127 nm波段的反射率进行了模拟计算, 用田口方法对硅纳米线阵列的表面传输效率进行了优化. 结果表明, 当硅纳米线阵列的周期为50 nm, 占空比为0.6, 高度约1000 nm时减反射效果最佳; 该结构在上述波段的平均反射率约为2%, 且在较大入射角度范围保持不变. 采用金属催化化学腐蚀法, 于室温、室压条件下在单晶硅表面制备周期为60 nm,占空比为0.53, 高度为500 nm的硅纳米线阵列结构, 其反射率的实验测试结果与计算模拟值相符, 在上述波段的平均反射率为4%—5%, 相对于单晶硅35%左右的反射率, 减反射效果明显. 这种减反射微结构能够在降低太阳电池成本的同时有效减小单晶硅表面的光反射损失, 提高光电转换效率.     

Silicon nitride/silicon oxide interlayers for solar cell passivating contacts based on PECVD amorphous silicon

This Letter demonstrates improved passivating contacts for silicon solar cells consisting of doped silicon films together with tunnelling dielectric layers. An improvement is demonstrated by replacing the commonly used silicon oxide interfacial layer with a silicon nitride/silicon oxide double interfacial layer. The paper describes the optimization of such contacts, including doping of a PECVD intrinsic a‐Si:H film by means of a thermal POCl₃ diffusion process and an exploration of the effect of the refractive index of the SiN_x. The n⁺ silicon passivating contact with SiN_x /SiO_x double layer achieves a better result than a single SiN_x or SiO_x layer, giving a recombination current parameter of ～7 fA/cm² and a contact resistivity of ～0.005 Ω cm², respectively. These self‐passivating electron‐selective contacts open the way to high efficiency silicon solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Amorphous silicon solar cells on nano‐imprinted commodity paper without sacrificing efficiency

Paper is a cheap substrate which is in principle compatible with the process temperature applied in the plasma enhanced chemical vapour deposition (PECVD) and hot wire CVD (HWCVD) of thin film silicon solar cells. The main drawback of paper for this application is the porosity due to its fibre like structure. The feature size (micrometre scale) is larger than the thickness of the applied photovoltaic layers. To overcome this problem, UV curable lacquer was used to planarize the surface. Plain 80 grams printer paper was taken as a substrate and the lacquer smoothens the rough surface of the paper such that a designed nanostructure can be imprinted for light scattering. In this manner single junction amorphous silicon solar cells with a HWCVD deposited intrinsic layer were processed on paper, without any concessions to the process temperature of 200 °C. The cell performance is comparable to that of reference cells grown on stainless steel, proving that solar cells can be deposited on paper substrates without sacrificing performance. PV on paper could be applied as ”disposable” power source for gadgets, electronic labelling, remote sensing systems, etc. (Internet of Things). (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

A glass thinning and texturing method for light incoupling in thin‐film polycrystalline silicon solar cells application

For polycrystalline silicon (poly‐Si) thin‐film solar cells on ～3 mm borosilicate glass, glass thinning reduces the glass absorption and light leaking to neighbouring cells; the glass texturing of the sun‐facing side suppresses reflection. In this Letter, a labour‐free wet etching method is developed to texture and thin the glass at the same time in contrast to conventionally separated labour‐intensive glass thinning and texturing processes. For 2 cm² size poly‐Si thin‐film solar cells on glass superstrate, this wet etching successfully thins down the glass from 3 mm to 0.5 mm to check the ultimate benefit of the process and introduces a large micron texture on the sun‐facing glass surface. The process enhances J_sc by 6.3% on average, with the optimal J_sc enhancement of 8%, better than the value of 4.6% found in the literature. This process also reduces the loss in external quantum efficiency (EQE loss), which is due to light leaking to neighbouring cells, dramatically. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15nm)/a-Si:H(10nm)/ epitaxial c-Si(47μm)/epitaxial c-Si(3μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer S d (Sd =PH3 /(PH3 +SiH4 +H2 )) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35mA/cm2 , a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

非晶硅光伏电池表面高效光陷阱结构设计

提出一种应用于非晶硅光伏电池表面的光陷阱结构,该结构主要由衍射光栅、低折射率MgF₂膜层、高折射率ZnS膜层及金属Ag反射镜组成.在标准测试条件(AM1.5,100 mW/cm²和25 ℃)下,运用严格耦合波理论,通过计算400-1000 nm波段内的1 μm厚非晶硅光伏电池的吸收光子数加权平均ξ_AM1.5,优化光陷阱结构的设计参数.结果表明:对于电池前表面减反射结构,在衍射光栅周期为800 nm、高度为160 关键词： 光陷阱结构 衍射光栅 减反射膜 非晶硅光伏电池     

Hybrid silver nanoparticle and transparent conductive oxide structure for silicon solar cell applications

Transparent conductive oxides (TCOs) have been widely used as electrodes for various solar cell structures. For heterojunction silicon wafer solar cells, the front TCO layer not only serves as a top electrode (by enhancing the lateral conductance of the underlying amorphous silicon film), but also as an antireflection coating. These requirements make it difficult to simultaneously achieve excellent conductance and transparency, and thus, only high‐quality indium tin oxide (ITO) has as yet found its way into industrial heterojunction silicon wafer solar cells. In this Letter, we present a cost‐effective hybrid structure consisting of a TCO layer and a silver nano‐particle mesh. This structure enables the separate optimization of the electrical and optical requirements. The silver nanoparticle mesh provides high electrical conductance, while the TCO material is optimized as an antireflection coating. Therefore, this structure allows the use of cost‐effective (and less conductive) TCO materials, such as aluminium‐doped zinc oxide. The performance of the hybrid structure is demonstrated to achieve a similar visible transmission (～86% in the 380–780 nm range) as an 80 nm thick ITO layer, but with 10 times better lateral conductance. The presented hybrid structure thus seems well suited for a variety of photovoltaic devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)