Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures

Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X‐ray diffraction in free‐standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X‐ray irradiation if additionally an external static electric field is applied.

     

Photocatalytic activity of α‐PbO2‐type TiO2

The α‐PbO₂‐type TiO₂ is synthesized under high‐pressure and high‐temperature environment and it shows higher photocatalytic activity as compared to rutile and anatase under UV irradiation. The reduction in α‐PbO₂‐type TiO₂ induces visible‐light photocatalytic activity. These results indicate that α‐PbO₂‐type TiO₂ is an important candidate material for use in a photocatalytic matrix.

     

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.

     

High‐temperature ferroelectricity and strong magnetoelectric effects in a hybrid organic–inorganic perovskite framework

A Cu‐based organic–inorganic perovskite framework exhibits high‐temperature ferroelectricity with strong magnetoelectric effects. Both electric field control of magnetization and magnetic field control of polarization are realized. Theoretical calculations suggest that a new mechanism of hybrid improper ferroelectricity arising from the Jahn–Teller distortions of magnetic metal ions and tilting of the organic cations are responsible for the peculiar multiferroic behaviors.

     

Equivalence and hermiticity of Dirac Hamiltonians in the Kerr gravitational field

In the paper, for the Kerr field, we prove that Chandrasekhar's Dirac Hamiltonian and the self‐adjoint Hamiltonian with a flat scalar product of the wave functions are physically equivalent. Operators of transformation of Chandrasekhar's Hamiltonian and wave functions to the η representation with a flat scalar product are defined explicitly. If the domain of the wave functions of Dirac's equation in the Kerr field is bounded by two‐dimensional surfaces of revolution around the z axis, Chandrasekhar's Hamiltonian and the self‐adjoint Hamiltonian in the η representation are Hermitian with equality of the scalar products, .

     

Non‐magnetic defects in the bulk of two‐dimensional topological insulators

We found that non‐magnetic defects in two‐dimensional topological insulators induce bound states of two kinds for each spin orientation: electron‐ and hole‐like states. Depending on the sign of the defect potential these states can be also of two kinds with different distribution of the electron density. The density has a maximum or minimum in the center. A surprising effect caused by the topological order is a singular dependence of the bound‐state energy on the defect potential.

     

P‐type tin‐oxide thin film transistors for blue‐light detection application

We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (I_light/I_dark) of 8.2 × 10³ at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.

     

Efficient synthesis and tailoring of magnetic and dielectric properties of Pb‐free perovskite‐like ABX3 metal‐organic frameworks

Perovskite‐like metal‐organic frameworks (MOFs) are hybrid materials of high interest for their potential in information storage technology, as Pb‐free substitutes for the widely used lead zirconate titanate (PZT) family of multiferroics. We report here a new, microwave‐assisted method of synthesis for perovskite‐like MOFs, which exploits the advantages of rapid and volumetric heating by microwaves in order to achieve synthesis within minutes, compared to days required by previously reported methods. The preliminary results demonstrate a broad control over the size and morphology of the products, by minor changes in the reaction conditions. An investigation of the effects of size and morphology on the magnetic and dielectric properties is presented here.

     

First‐principles prediction of a novel hexagonal phosphorene allotrope

Phosphorus prefers three‐connected configurations due to its inequivalent sp³‐hybridization. In the past year, many quasi two‐dimensional three‐connected networks were proposed as possible phosphorene allotropes. In this Letter, a new quasi two‐dimensional three‐connected network is proposed as a new potential phosphorene allotrope (Hex‐star). Based on first‐principles method calculations, the structure, stability and electronic properties of Hex‐star were systematically investigated. Our results indicate that Hex‐star is dynamically stable and it is a semiconductor with quasi‐direct band gap of 1.81 eV based on HSE06 method. Perspective top view (left) and Magen–David‐like orthographic top view (right) of Hex‐star phosphorene.

     

Spectral dependence of light extraction efficiency of high‐power III‐nitride light‐emitting diodes

Using the recently suggested method of processing the data on external quantum efficiency as a function of output optical power, we have estimated the dependence of light extraction efficiency of high‐power light‐emitting diodes (LEDs) on their emission wavelength varied between 425 nm and 540 nm. The extraction efficiency is found to increase with the wavelength from ～80% to ～85% in this spectral range and to correlate with the wavelength dependence of reflectivity of the large‐area p‐electrode being the essential unit of the LED chip design. The correlation found identifies the incomplete reflection of emitted light from the electrode as the major mechanism eventually controlling the spectral dependence of the efficiency of light extraction from the LEDs.

     

Graphene screen‐printed radio‐frequency identification devices on flexible substrates

Despite the great promise of printed flexible electronics from 2D crystals, and especially graphene, few scalable applications have been reported so far that can be termed roll‐to‐roll compatible. Here we combine screen printed graphene with photonic annealing to realize radio‐frequency identification devices with a reading range of up to 4 meters. Most notably our approach leads to fatigue resistant devices showing less than 1% deterioration of electrical properties after 1000 bending cycles. The bending fatigue resistance demonstrated on a variety of technologically relevant plastic and paper substrates renders the material highly suitable for various printable wearable devices, where repeatable dynamic bending stress is expected during usage. All applied printing and post‐processing methods are compatible with roll‐to‐roll manufacturing and temperature sensitive flexible substrates providing a platform for the scalable manufacturing of mechanically stable and environmentally friendly graphene printed electronics.

     

Ag fractals formed on top of a porous TiO2 thin film

This work demonstrates the formation of Ag fractals on top of a Ag:TiO₂ thin film. The dendrite‐type objects emerged from a homogeneous and highly transparent Ag:TiO₂ nanocomposite, via the mechanism of diffusion‐limited‐aggregation of Ag atoms, during heat‐treatment at 500 °C. A porous TiO₂ matrix was also formed during this process, opening a wide range of possible applications, namely in sensing‐based ones, together with surface enhanced spectroscopies. Furthermore, fractals incorporate a wide range of shapes and spatial scales, inducing a potentially interesting optical response, over the whole visible range, presumably related with localized surface plasmon modes with very broad spectral distribution.

     

Delta‐layer doping profile in diamond providing high carrier mobility

We show that the nano‐scale delta‐layer doping profile in diamond can significantly influence both the carrier mobility and two‐dimensional conductivity. We numerically considered and compared a simple boron doping profile with one maximum at the delta‐layer center and a more complicated profile with two maxima inside the delta layer and a minimum at its center. As a result we concluded that in the last case the hole mobility and the two‐dimensional conductivity are higher by more than 3 times and 60% respectively than in the first case. The physical reason for the improvement is that for the two‐maxima doping profile the peaks of the carrier and ionized dopant densities are spatially separated, whereas for the simple one‐maximum doping profile they coincide. So, the carrier scattering on ionized dopants for the two‐maxima profile significantly decreases in comparison with the simple one‐maximum profile. The proposed two‐maxima delta‐layer doping profile can be used for the creation of diamond‐based micro‐ and nanoelectronics devices, e.g. high‐frequency field effect transistors.

     

Lead‐free mesoscopic Cs2SnI6 perovskite solar cells using different nanostructured ZnO nanorods as electron transport layers

Lead‐free and more air‐stable perovskite Cs₂SnI₆ absorber with a direct bandgap of 1.48 eV is synthesized via a modified solution process. Different nanostructured ZnO nanorod arrays as electron transport layers and hole blocking layers are grown by controlling the seed layer and used to fabricate mesoscopic perovskite solar cells with Cs₂SnI₆ as light absorber layer. The influences of ZnO seed layers and nanorod morphology on the device photovoltaic performance were also investigated. With careful control of ZnO nanorod length and pore size to ensure high loading of the Cs₂SnI₆ absorber, we achieved power conversion efficiency of near 1%.

     

Numerical modeling of photovoltaic efficiency of n‐type GaN nanowires on p‐type Si heterojunction

In this Letter, we investigate the photovoltaic properties of heterojunction solar cells based on n‐GaN nanowire (NW)/ p‐Si substrate heterostructures by means of numerical modeling. Antireflection properties of the NW array on the top of Si substrate were studied theoretically to show an order of magnitude enhancement in antireflection properties in comparison to the pure Si surface (2.5% vs. 33.8%). In order to determine the optimal morphology and doping levels of the structure with maximum possible efficiency we simulated its properties. The carried out simulation showed that the maximum efficiency should be more than 20% under AM1.5D illumination. The proposed design opens new perspectives and opportunities in the field of heterojunction tandem solar cell researches.

     

Observation of negative refraction in the graphene/ferrite composite

An observation of negative refraction in the naturally obtained composition of graphene and barium ferrite is reported. The capacitance and inductance measurements revealed the electric and magnetic resonances accompanied with the negative values of permittivity and permeability in the overlapped frequency range. According to the “left‐handed” media approach such a material is characterized by negative refraction. The derived values of the real part of refractive index are negative at the frequencies above 500 MHz.

     

CVD grown 2D MoS2 layers: A photoluminescence and fluorescence lifetime imaging study

In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS₂. µ‐Raman, µ‐photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) are utilized to probe the fluorescence lifetime and photoluminescence properties of individual flakes of MoS₂ films. Usage of these three techniques allows identification of the grown layers, grain boundaries, structural defects and their relative effects on the PL and fluorescence lifetime spectra. Our investigation on individual monolayer flakes reveals a clear increase of the fluorescence lifetime from 0.3 ns to 0.45 ns at the edges with respect to interior region. On the other hand, investigation of the film layer reveals quenching of PL intensity and lifetime at the grain boundaries. These results could be important for applications where the activity of edges is important such as in photocatalytic water splitting. Finally, it has been demonstrated that PL mapping and FLIM are viable techniques for the investigation of the grain‐boundaries.

     

MOCVD synthesis of compositionally tuned topological insulator nanowires

Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub‐micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi‐, Se‐, and Te‐bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi₂Se₃ to Bi₂Te₃, including the ternary compound Bi₂Te₂Se. These high quality nanostructured TI compounds are suitable platforms for on‐going searches for Majorana fermions (Mourik et al., Science 336 , 1003 (2012) and Cook et al., Rev. B 86 , 155431 (2012) [1, 2]).

     

CuNi binary alloy catalyst for growth of nitrogen‐doped graphene by low pressure chemical vapor deposition

The CuNi binary alloy can be significant as a catalyst for nitrogen‐doped (N‐doped) graphene growth considering controllable solubility of both carbon and nitrogen atoms. Here, we report for the first time the possibility of synthesizing substitutional N‐doped bilayer graphene on the binary alloy catalyst. Raman spectroscopy, atomic force microscopy and transmission electron microscopy analysis confirm the growth of bilayer and few‐layer graphene domains. X‐ray photoelectron spectroscopy analysis shows the presence of around 5.8 at% of nitrogen. Our finding shows that large N‐doped bilayer graphene domains can be synthesized on the CuNi binary alloy.

     

Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors

Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO₃ dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO₃ would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.

Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal.