Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures

The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f_3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n _s = (1.6-6.6) × 10[su11] cm^-2. The dependence f_3dB ≈ n _s ^- 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.     

Theoretical analysis of the acoustic phonon limited energy loss rate and relaxation time of hot 2D-excitons in a GaAs-square quantum well (SQW)

The average energy loss rate and relaxation time of non-degenerate 2D-excitons interacting with the deformation- and piezoelectric potential of 3D acoustic bulk phonons are calculated perturbation theoretically as a function of the exciton temperature using the matrix elements previously derived in [1]. The energy loss rate limited by the acoustic deformation potential increases proportional toT ₃ ^7/2 (T ₃ ^3/2 ) if the phonon energy is much larger (smaller) than the thermal energy of the excitons having the temperatureT _e . It is shown, that the phonon wavevector componentq _z perpendicular to the interface of the QW must be taken into account in the calculation of the total excitonic loss rate in order to obtain the energy relaxation time value of 30 ps recently estimated in [2] from photoluminescence intensity measurements.     

Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K

The temperature dependence of the energy relaxation time τ_e (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τ_e, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ _e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τ_LOτ4.5 ps). The energy losses calculated from the τ_e data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 371–375 (10 September 1996)     

Theory of the hot free carrier intraband-absorption coefficient of n-inversion layers

The absorption coefficient K of a quasi two dimensional (2D) hot free electron gas is calculated for the first time as a function of the lattice temperature T, the photon angular frequency w, the carrier density N_s as well as the electron temperature T_e when the carriers are scattered by ionized impurities, acoustic phonons and polar optical phonons. Analytical expressions are derived in the limiting cases of non-degeneracy and degeneracy of the electron system. In the quantum limit ħw/k_BT_e ≳ 1 where the interaction between the electron and the photon is inelastic K sensitively depends on the limiting scattering mechanism showing that the electron motion is completely controlled by the photon field. In the classical limit ħw/k_BT_e ⪡ 1 the absorption decreases proportional to w¹ independent of the limiting scattering mechanism in agreement with the experimental data deduced from far-infrared absorptivity measurements on GaAs heterolayers.     

Rydberg states in the D layer of the atmosphere and the GPS positioning errors

The noncoherent radiation in the frequency range 0.8–8.0 (GHz) formed in the D layer of the ionosphere at high solar activity due to transitions between Rydberg states is considered. The emitting layer thickness located 80–110 km above ground surface is estimated. A complicated irregular behavior of the frequency dependence of the radiation intensity for different values of å electron concentration n _e and temperature T _e due to different characteristics of electron scattering on the nitrogen and oxygen molecules is revealed. The dependences of the flux power of UHF radiation from the D layer in the indicated frequency range on the concentration and temperature of free electrons are calculated. It is shown that, at a frequency of ν = 1.44 GHz, the UHF radiation spectrum features a characteristic waist point, the position of which is almost independent of the electron temperature T _e ; i.e., a one-parameter dependence of the power flux on the electron n _e density takes place. In the frequency range of 4.0–8.0 GHz, the radiation spectrum exhibits a family of curves that, for each value of n _e and a wide range of T _e , give rise to a relationship known as the “bottleneck.” It was found that, with increasing frequency, the bottleneck moves upwards along a curve described by a quadratic dependence on the radiation frequency. For a frequency of ～5 GHz, and a certain range of temperature T _e and electron concentration within 5 · 10³ cm^?3 < n _e < 2 · 10⁴ cm^?3, an almost linear dependence of the UHF radiation power on n _e is observed. A comparative analysis of GPS signal delays at frequencies ν _f ⁽¹⁾ = 1.57 and ν _f ⁽²⁾ ≈ 5 GHz for various states of the ionosphere is performed. It is shown that, under the same condition, the use of the second frequency is more advantageous and informative. The ways of further development of the theory and experiment in studying the role of quantum resonant properties in the distortion of global satellite positioning system signals and in solving the fundamental problem of their elimination are discussed.     

The magnetic field dependence of the structural transition temperature in La3S4 and La3Se4

The magnetic field dependence of the structural transition temperature T_m from the cubic to the tetragonal phase has been determined for single crystals of La₃S₄ and La₃Se₄. The observed field dependence of T_m can be accounted for by the band Jahn-Teller model of the coupling of an e_g-band to the shear mode of the cubic lattice without invoking any coupling to acoustic or optical phonons.     

Electron Temperature Measurement in a Premixed Flat Flame Using the Double Probe Method

The electron temperatures T_e were measured using a double probe in a premixed methane flame produced by a calibration burner according to Hartung et al. The experiment was performed at atmospheric pressure. In contrast to other authors, we have managed to find typical nonlinearities corresponding to the retarding electron current region and to calculate electron temperatures using a suitable fit on the basis of the measured characteristics. A Pt‐Rh thermocouple was used to measure temperatures T_h corresponding to “heavy” species. Our results indicate that the flame plasma can be considered to be weakly non‐isothermic — T_e = (2400–4000) K, T_h = (1400–1600) K. On the basis of measurement of the saturated ion current, the number density of the charged particles was estimated at (0.3–3.8) · 10¹⁷ m^‐3. The trends in T_e and T_h in dependence on the positions of the probes and thermocouple in the flame differ substantially; this fact has not yet been explained (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electron Temperature Dependence of the Dissociative Recombination Coefficient of Molecular Argon Ions Ar+2 with Electrons

A dual mode (TM₀₁₀ cylindrical cavity/cylindrical waveguide) microwave apparatus is used to study the ion mobility and dissociative recombination of molecular argon ions with electrons in the afterglow period of a d.c. glow discharge as a function of electron temperature when electrons were heated by microwaves up to T_e ≤ 10300K, with T₊ = T_gas = 300K. The electron temperature dependence of the total rate coefficient of dissociative recombination may be represented by α (Ar⁺₂) = (8.1 ± 0.5) × 10^–7[300/T_e(inK)]^0.64cm³s^–1 which is in very good agreement with most previous experimental results but not with the recent theoretical calculations (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Initiation and Sustainment of Unipolar Arc Discharges by a Microsecond Pulse Plasma

Unipolar arcs have been produced by contacting metal surfaces with microsecond pulse plasmas. Plasma temperature T_e, density n_e and potential (with respect to ground) were controlled in the limits 7–12 eV, 10¹⁸–10¹⁹ m^?3, 20–40 V, respectively, and the influence of these parameters on arc current amplitude (50–500 A) and ignition probability has been investigated. It was found that the ignition is the most limiting process requiring surface contaminations as well as the transport of net currents to the surface. The amplitude of the current was proportional to n_eT_e^1/2.     

Phonon-assisted spin diffusion in solids

The spin flip-flop transition rate is calculated for the case of spectral spin diffusion within a system of dipolarly coupled spins in a solid where the lattice vibrations are present. Long-wavelength acoustic phonons time-modulate the interspin distance r_ij and enhance the transition rate via the change of the 1/r³_ij term in the coupling dipolar Hamiltonian. The phonon-assisted spin diffusion rate is calculated by the golden rule in the Debye approximation of the phonon density of states. The coupling of the spins to the phonons introduces temperature dependence into the transition rate, in contrast to the spin diffusion in a rigid lattice, where the rate is temperature-independent. The direct (one-phonon absorption or emission) processes introduce a linear temperature dependence into the rate at temperatures not too close to T = 0. Two-phonon processes introduce a more complicated temperature dependence that again becomes simple analytical for temperatures higher than the Debye temperature, where the rate is proportional to T², and in the limit T → 0, where the rate varies as T⁷. Raman processes (one-phonon absorption and another phonon emission) dominate by far the phonon-assisted spin flip-flop transitions.     

Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

The temperature–dependent electrical resistivity ρ(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. ρ(T) shows semiconducting phase in low temperature regime (140 K<T<180 K), shows an absolute minimum near 180 K and increases linearly with T at high temperatures (200 K<T<300 K). The resistivity in metallic phase is estimated within the framework of electron–phonon and electron–electron scattering mechanism. The contributions to the resistivity by inherent acoustic phonons (ρ_ac) as well as high frequency optical phonons (ρ_op) were estimated using Bloch–Gruneisen (BG) model of resistivity. The electron–electron contributions ρ_e?e=BT² in addition with electron–phonon scattering is also estimated for complete understanding of resistivity in metallic phase. Estimated contribution to resistivity by considering both phonons, i.e., ω_ac and ω_op and the zero limited resistivity are added with electron–electron interaction ρ_e–e to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model. The SPC model consistently retraces the low temperature resistivity behaviour (140 K<T<180 K). Finally the theoretically calculated resistivity is compared with experimental data which appears favourable with the present analysis in wide temperature range.     

The role of electron-electron and electronphonon interactions in the processes of destruction of landau quantization in InAs/AlSb nanostructures

A nonmonotonous temperature dependence of the electron quantum relaxation time is found. The results are interpreted, taking into account the competition between the intrasubband and intersubband electron-electron interaction channels. The experimental nonlinear τ_q (T) and T_D (T) dependences are explained by the appearance of an additional channel of two-dimensional (2D) electron scattering by deformation acoustic phonons under interaction with piezoacoustic phonons.     

Electron temperature (T e) measurements by Thomson scattering system

Thomson scattering technique based on high power laser has already proved its superoirity in measuring the electron temperature (T _e and density (n _e) in fusion plasma devices like tokamaks. The method is a direct and unambiguous one, widely used for the localised and simultaneous measurements of the above parameters. In Thomson scattering experiment, the light scattered by the plasma electrons is used for the measurements. The plasma electron temperature is measured from the Doppler shifted scattered spectrum and density from the total scattered intensity. A single point Thomson scattering system involving a Q-switched ruby laser and PMTs as the detector is deployed in ADITYA tokamak to give the plasma electron parameters. The system is capable of providing the parameters T _e from 30 eV to 1 keV and n _e from 5 × 10¹²cm⁻³−5 × 10¹³cm⁻³. The system is also able to give the parameter profile from the plasma center (Z=0 cm) to a vertical position of Z=+22 cm to Z=−14 cm, with a spatial resolution of 1 cm on shot to shot basis. This paper discusses the initial measurements of the plasma temperature from ADITYA.     

Specific features of the BCS-BEC crossover and thermodynamics in the 2D resonant Fermi gas with p-wave pairing

The 2D resonant Fermi gas with p-wave pairing is considered n the BCS-BEC regime. For the 2D analog of the superfluid A1 phase, the Leggett equations [1] for superfluid gap Δ and chemical potential μ are analytically solved at T = 0 and the spectrum of the collective excitations (acoustic waves) is analyzed in the BCS regime (μ > 0), where the triplet Cooper pairs emerge; in the BEC regime (μ < 0), where the triplet local pairs (molecules) emerge; and in the transition region, where μ → 0. At low temperatures, the contribution of the superfluid Fermi quasiparticles of the resonant gas to heat capacity C _v and the density of normal component ρ_n is also calculated. At μ = 0, the fermionic contribution to ρ_n and C _v are represented as power functions of temperature (ρ_n ～ T ³ and C _v ～ T ²). However, similar power contributions to these quantities are related to phonons (bosonic acoustic oscillations). The possibility of the experimental observation of the nontrivial topological term with the charge Q = 1 in the BCS regime of the 2D A1 phase is briefly discussed.     

Recombination population of excited states of the hydrogen atom in an He-H<Subscript>2</Subscript> plasma

The population of excited states of the hydrogen atom in an afterglow plasma produced by a pulsed discharge in helium (40 Torr) with a small admixture of hydrogen ([H₂] ≈ 10¹² cm^?3) has been studied spectroscopically. The contribution from electron-ion recombination Γ ₃ ^rec to the production rate of atoms H(n = 3) has been separated. On the basis of an experiment in which the response of the spectral line intensities to the perturbation of the electron temperature in the afterglow phase was observed, the dependence Γ ₃ ^rec (T _e ～ T _e ^?(0.9–1.0) has been obtained in the region kT _e = 0.026–0.064 eV.     

Observation of π Berry phase in quantum oscillations of three‐dimensional Fermi surface in topological insulator Bi2Se3

We report the quantum transport studies on Bi₂Se₃ single crystal with bulk carrier concentration of ～10¹⁹ cm^–3. The Bi₂Se₃ crystal exhibits metallic character, and at low temperatures, the field dependence of resistivity shows clear Shubnikov–de Haas (SdH) oscillations above 6 T. The analysis of these oscillations through Lifshitz–Kosevich theory reveals a non‐trivial π Berry phase coming from three‐dimensional (3D) Fermi surface, which is a strong signature of Dirac fermions with three‐dimensional dispersion. The large Dingle temperature and non zero slope of Williamson–Hall plot suggest the presence of enhanced local strain field in our system which possibly transforms the regions of topological insulator to 3D Dirac fermion metal state. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Low-temperature mobility of surface electrons and ripplon-phonon interaction in liquid helium

The low-temperature dc mobility of the two-dimensional electron system localized above the surface of superfluid helium is determined by the slowest stage of the longitudinal momentum transfer to the bulk liquid, namely, by the interaction between the surface and volume excitations of liquid helium, which decreases rapidly with the temperature. Thus, the temperature dependence of the low-frequency mobility is μ_dc ≈ 8.4 × 10⁻¹¹ n _e T ^−20/3 cm⁴ K^20/3/(V s), where n _e is the surface electron density. The relation T ^20/3 E_⊥⁻³ ≪ 2 × 10⁻⁷ between the pressing electric field (in kilovolts per centimeter) and temperature (in Kelvins) and the value ω ≲ 10⁸ T ⁵ K⁻⁵ s⁻¹ of the driving-field frequency have been obtained, at which the above effect can be observed. In particular, E _⊥ ≃ 1 kV/cm corresponds to T ≲ 70 mK and ω/2π ≲ 30 Hz.     

Thomson Scattering Applied to a Noisy Radiative Plasma

Thomson scattering with a 1.5 ms long pulse mode 20 J ruby laser has been applied to a radiative argon plasma with electron densities n_e from 2.5 10¹⁹ m^?3 to 1.5 10²⁰ m^?3 and an electron temperature T_e of about 3 eV. Photon counting techniques have been used. The accuracy of n_e and T_e to be reached is about 5% after 10 shots. The signal to noise ratio S/N has been optimized by the use of optical filters and a special purpose grating. The effects of these elements on S/N have been calculated. The entrance angle, transmission and quantum efficiency have also been optimized. A comparison between 5 possible laser systems, including a normal mode and a Q-switched mode ruby laser, has been carried out.     

The low temperature heat capacity and electrical resistivity of ReO3

Low temperature heat capacity and electrical resistivity measurements are reported for ReO₃. The heat capacity data give an acoustical mode Debye temperature θ = 327 K, and an electrronic density of states parameter γ = 2.83 mJ/mole-K². The observed temperature dependence of the resistivity is consistent with the existence of electron scattering both from acoustic mode phonons and from optical mode phonons of characteristic temperature θ_E = 1080 K. The above measurements are used to evaluate the electron-phonon interaction parameter λ = 0.24.     

Polar optical phonon limited energy and momentum relaxation of hot electrons in a GaAs-quantum well (QW)

The average energy loss rate, the energy- as well as the momentum relaxation time of hot electrons confined in a GaAs-square quantum well are calculated as a function of the external controllable parametersn _s (electron density),T (lattice temperature) andT _e (electron temperature) for the interaction of the charge carriers with bulk- and surface polar optical phonons. Analytical expressions are derived in the limit of vanishing quantum well width at non-degeneracy and degeneracy of the electron system. Both energy-and momentum relaxation time are found to be complicated functions of the ratiosT _D /T _e andT _D /T withT _D being the Debye-temperature of the polar optical phonon involved in the scattering. In a thick (very thin) QW the energy loss rate to bulk PO-phonons is found to be larger (smaller) than the corresponding loss rate to surface modes. The energy- (momentum-) relaxation times are found to be constant (increasing) functions ofn _s at non-degeneracy (degeneracy) of the electron system. Dedicated to Professor Karlheinz Seeger on the occasion of his 60th birthday