A major focus on graphene‐based two‐dimensional (2D) materials is highlighted in recent days owing to their fascinating properties with widespread applications in electronic devices, catalysis, photonics and medicine. Here, we critically evaluate 2D materials based quantum dots (QDs) to understand the significant ways of fabrication adopted to meet their challenging demands in par with other 2D nanostructures to be in parallel with the current photonic technology with emphasis on future research scope to make use of these materials. We also discuss the different applications of 2D QDs emphasizing the realization of fluorescent probes which are in great demand to well‐establish these materials in the healthcare sector for the betterment of mankind. This study is a key priority and will bring a great impact in the advancement of simple yet challenging 2D QDs by bringing them towards the next level of applications point‐of‐view similar to that of graphene. 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
Cite this article: Tengdong Zhang(张腾东), Rui Fan(樊睿), Yan Gao(高炎), Yanling Wu(吴艳玲), Xiaodan Xu(徐晓丹), Dao-Xin Yao(姚道新), and Jun Li(李军) Possible coexistence of superconductivity and topological electronic states in 1T-RhSeTe 2025 Chin. Phys. B 34 027403 相似文献
As the fundamental optical properties and novel photophysics of graphene and related two-dimensional(2D) crystals are being extensively investigated and revealed, a range of potential applications in optical and optoelectronic devices have been proposed and demonstrated. Of the many possibilities, the use of 2D materials as broadband, cost-effective and versatile ultrafast optical switches(or saturable absorbers) for short-pulsed lasers constitutes a rapidly developing field with not only a good number of publications, but also a promising prospect for commercial exploitation. This review primarily focuses on the recent development of pulsed lasers based on several representative 2D materials. The comparative advantages of these materials are discussed, and challenges to practical exploitation, which represent good future directions of research, are laid out. 相似文献
We found that non‐magnetic defects in two‐dimensional topological insulators induce bound states of two kinds for each spin orientation: electron‐ and hole‐like states. Depending on the sign of the defect potential these states can be also of two kinds with different distribution of the electron density. The density has a maximum or minimum in the center. A surprising effect caused by the topological order is a singular dependence of the bound‐state energy on the defect potential.
Monolayer transition‐metal dichalcogenides have inspired worldwide efforts in optoelectronic devices but real applications are hindered with their reduced optical absorption due to their atomically ultrathin signature. In this study, by utilizing their biradical nature such as excellent absorption coefficient, broad bandwidth from the ultraviolet to near‐infrared region, and small triplet–singlet energy gap, a series of helicene 5,14‐diaryldiindeno[2,1‐f:1′,2′‐j]picene (DDP) derivatives ( 1ab , 1ac , and 1bb ) are integrated with monolayer MoS2 for extraordinary photodetector performance and outstanding stability. Via comprehensive time‐resolved studies, the interfacial charge‐transfer process from the DDPs to the MoS2 layer is evidenced by the stabilized exciton property of the organics ( 1ac )/MoS2 heterostructure. Significantly, the 1ac /MoS2 photodetector exhibits an ultrahigh photoresponsivity of 5 × 107 A W−1 and a fast response speed of 45 ms due to the highly efficient photoexcited carrier separation and the matched type‐II energy band alignment. The biradical 1ac /MoS2 hybrid photodetector shows no sign of degradation after one‐month operation. The results pave a new avenue for biradical based high‐performance and super‐broadband optoelectronic devices. 相似文献
Strong two‐photon absorption (TPA) in monolayer MoS2 is demonstrated in contrast to saturable absorption (SA) in multilayer MoS2 under the excitation of femtosecond laser pulses in the near‐infrared region. MoS2 in the forms of monolayer single crystal and multilayer triangular islands are grown on either quartz or SiO2/Si by employing the seeding method through chemical vapor deposition. The nonlinear transmission measurements reveal that monolayer MoS2 possesses a nonsaturation TPA coefficient as high as ∼(7.62 ±0.15) ×103 cm/GW, larger than that of conventional semiconductors by a factor of 103. As a result of TPA, two‐photon pumped frequency upconverted luminescence is observed directly in the monolayer MoS2. For the multilayer MoS2, the SA response is demonstrated with the ratio of the excited‐state absorption cross section to ground‐state cross section of ∼0.18. In addition, the laser damage threshold of the monolayer MoS2 is ∼97 GW/cm2, larger than that of the multilayer MoS2 of ∼78 GW/cm2.
