Structural and electrical analysis of In–Sb–Te‐based PCM cells

Two In–Sb–Te compounds with low Te content (12 at.% and 17 at.%), deposited by metalorganic chemical vapour deposition, were implemented into prototype phase‐change memory devices of size 50 × 50 nm² and 93 × 93 nm². These chalcogenides yielded devices with higher threshold voltage than those based on Ge–Sb–Te alloys. The endurance and programming window were markedly improved (from 10³ to 10⁶ cycles and from 1 to 2 orders of magnitude, respectively) when employing the Te‐richer alloy. Moreover, in situ structural and electrical analysis on TiN/In–Sb–Te/dielectric stacks provided additional insight on the thermal stability of the two ternary phases In₃SbTe₂ and InSb_0.8Te_0.2, which were found to coexist in these compounds. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature dependence of the Raman spectra of Bi2Te3 and Bi0.5Sb1.5Te3 thermoelectric films

The temperature dependence of the Raman spectra of Bi₂Te₃ and Bi_0.5Sb_1.5Te₃ thermoelectric films was investigated. The temperature coefficients of the E_g(2) peak positions were determined as –0.0137 cm^–1/°C and –0.0156 cm^–1/°C, respectively. The thermal expansion of the crystal caused a linear shift of the Raman peak induced by the temperature change. Based on the linear relation, a reliable and noninvasive micro‐Raman scattering method was shown to measure the thermal conductivity of the thermoelectric films. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Wide band gap and p‐type conductive Cu–Nb–O films

Cu–Nb–O films with a thickness of ca. 150 nm were prepared on borosilicate glass substrates using CuNbO₃ ceramic target at substrate temperature of 500 °C by pulsed laser deposition. The X‐ray diffraction patterns showed that the Cu–Nb–O films were amorphous or an aggregation of fine crystals. The post‐annealed film at 300 °C in N₂ gas showed 80% transmission in visible light (band gap = 2.6 eV) and high p‐type conductivity of 21 S cm^–1. The Cu–Nb–O film with a thickness of 100 nm, fabricated from the target with a composition of Cu/Nb = 0.9, showed the highest p‐type conductivity of 116 S cm^–1. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Synthesis and thermoelectric properties of YbSb2Te4

The study of the ternary phase diagram Yb–Sb–Te has led to the synthesis of YbSb₂Te₄ as a pure phase by way of high energy ball milling followed by annealing, whereas typical high temperature powder metallurgy leads to multiphase sample with impurities of the very stable YbTe. The Hall mobility, Seebeck coefficient, electrical resistivity and thermal conductivity of the layered compound YbSb₂Te₄ were measured in the range of 20–550 °C. The thermoelectric figure of merit peaks at 525 K and reaches 0.5. Of particular interest is the very low lattice thermal conductivity (as low as a glass) which makes YbSb₂Te₄ and related compounds promising thermoelectric materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of aluminium-modified Ge2Sb2Te5 thin films for the applicability as phase-change storage device material

Electrical and optical studies have been carried out on aluminium-modified Ge₂Sb₂Te₅ thin films to check its applicability as an active material in optical and electrical memory storage devices. Five polycrystalline bulk samples were prepared with compositions: Al_x(Ge₂Sb₂Te₅)_1?x; x = 0, 0.08, 0.14, 0.21, 0.25. Amorphous thin films were deposited from the polycrystalline bulk by thermal evaporation. Temperature-dependent resistance shows the increase in crystallization temperature of Ge–Sb–Te films on aluminium addition. Activation energy for conduction, conductivity, optical band gap, coefficient of refraction and extinction coefficient are studied with respect to Al content in both amorphous and crystalline phases of Ge–Sb–Te alloy films.     

Electrocaloric effect in antiferroelectric PbZrO3 thin films

Antiferroelectric PbZrO₃ thin films have been deposited on Pt(111)/Ti/SiO₂/Si substrate by polymer modified sol–gel route. Temperature dependent P –E hysteresis loops have been measured at 51 MV/m within a temperature range of 40 °C to 330 °C. The maximum electrocaloric effect ～0.224 × 10^–6 K mV^–1 has been observed near the dielectric phase transition temperature (235 °C) of the thin films. The electrocaloric effect and its strong temperature dependence have been attributed to nearly first‐order phase transition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Evidence for insulator–metal transition in amorphous chalcogenide Se–Ge–Te films

The temperature dependence of the dc conductivity and thermoelectric power was determined for five different amorphous chalcogenide Se–Ge–Te films, with Ge?=?3.0–22?at.%, Se?=?0–97?at.% and Te?=?0–97?at.%. The films were prepared by thermal evaporation of GeSe₄, GeTe₄ and GeSe₂Te₂ quenched bulk materials. Values of the activation energy calculated from the temperature dependence of both electrical conductivity and thermoelectric power showed a decrease with increasing Ge content in the Se–Ge films as well as with replacement of Te for Se in the Se–Ge–Te films. The results showed an Anderson transition, with the conductivity showing insulating behaviour on the Ge–Se side to metallic behaviour at the binary composition Ge–Te. The radius of localization was obtained for the different compositions investigated. The wave function associated with the charge carriers at the composition Ge_3.3Te_96.7 is non-localized. A minimum metallic conductivity of 237?±?5?(Ω?cm)^?1 was found.     

Local structure around Zn and Ga in solution‐processed In–Ga–Zn–O and implications for electronic properties

We study by X‐ray absorption spectroscopy the local structure around Zn and Ga in solution‐processed In–Ga–Zn–O thin films as a function of thermal annealing. Zn and Ga environments are amorphous up to 450 °C. At 200 °C and 450 °C, the Ga atoms are in a β‐Ga₂O₃ like structure, mostly tetrahedral gallium oxide phase. Above 300 °C, the Zn atoms are in a tetrahedral ZnO phase for atoms inside the nanoclusters. The observed formation of the inorganic structure above 300 °C may be correlated to the rise of the mobility for IGZO TFTs. The Zn atoms localized at the nanocluster boundary are undercoordinated with O. Such ZnO cluster boundary could be responsible for electronic defect levels. Such defect levels were put in evidence in the upper half of the band gap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Stoichiometry changes in tellurium oxide films

The changes occuring in the stoichiometry of evaporated tellurium oxide films from room temperature to 375°C were investigated using infrared (IR) absorption spectroscopy, X-ray diffraction and scanning electron microscopy (SEM). Films deposited on room temperature substrate were found to decompose and amorphous having Te₂O₅ stoichiometry. Annealing at 250°C in air for 30 minutes gave polycrystalline nature with TeO₃ stoichiometry. The IR and X-ray diffraction results further indicated that the original TeO₂ stoichiometry could be restored at 375°C annealing temperature with a preferred growth along 110 plane. These films were found to be chemically stable as further annealing in air at 375°C gave no change on their infrared spectrum and X-ray diffraction pattern.     

Synthesis and electric properties of perovskite Pr0.6Ca0.4Fe0.8Co0.2O3 for SOFC applications

In this study, polycrystalline powder Pr_0.6Ca_0.4Fe_0.8Co_0.2O₃ (PCFC) was synthesized by a sol–gel process. This oxide was analyzed by X-ray powder diffraction. Synthesized Pr_0.6Ca_0.4Fe_0.8Co_0.2O₃ showed up to be single phase and belongs to the orthorhombic crystalline system with a Pbnm space group. The microstructural features of the synthesized products display particles having an irregular morphology and a size in the range of 50–100 nm. X-ray diffraction (XRD) analysis shows the chemical compatibility between the PCFC cathode and the electrolyte Sm-doped ceria since no reaction products were honored when the material was mixed and co-fired at 1,000 °C for 168 h. The thermal expansion coefficient of PCFC 16.9?×?10^?6 °C^?1 is slightly higher than that of Ce_0.8Sm_0.2O_1.9 (SDC) over the studied temperature range. The greater contribution to the total resistance of the electrode is the electrochemical resistance associated with oxygen exchange in the cathode surface (0.96 Ωcm²). The dc four-probe measurement indicated that PCFC exhibits fairly high electrical conductivity, over 100 S cm^?1 at T?≥?500 °C, making this material promising as a cathode material for intermediate temperature solid oxide fuel cells.     

Structure and electrical properties of Sb2Te3 and Bi0.4Sb1.6Te3 metastable phases obtained by HPHT treatment

We have obtained the metastable phase of the thermoelectric alloy Bi_0.4Sb_1.6Te₃ with electron type conductivity for the first time using the method of quenching under pressure after treatment at P=4.0 GPa and T=400–850 °C. We have consequently performed comparative studies with the similar phase of Sb₂Te₃. The polycrystalline X-ray diffraction patterns of these phases are similar to the known monoclinic structure α-As₂Te₃ (C2/m) with less monoclinic distortion, β ≈ 92°. We have measured the electrical resistivity and the Hall coefficient in the temperature range of T=77?450 K and we have evaluated the Hall mobility and density of charge carriers. The negative Hall coefficient indicates the dominant electron type of carriers at temperatures up to 380 K in the metastable phase of Sb₂Te₃ and up to 440 K in the metastable state of Bi_0.4Sb_1.6Te₃. Above these temperatures, the p-type conductivity proper to the initial phases dominates.     

Mössbauer study of the disorder in crystalline and amorphous Ge implanted with 125mTe ions

Crystalline and amorphous Ge and amorphous Ge_0.8Te_0.2 were implanted with ^125mTe. The Mössbauer spectra showed quadrupole split doublets. The isomer shift and quadrupole split values suggested that the atomic configuration around Te after implantation in Ge is similar to that of amorphous GeTe.     

High‐temperature thermoelectric properties of Cu2In4Te7

Cu₂Ga₄Te₇ has recently been reported to have a relatively high thermoelectric (TE) figure of merit (ZT). However, the TE properties of Cu₂In₄Te₇, which has the same defect zinc‐blende structure as Cu₂Ga₄Te₇, have been hardly investigated. Here, we demonstrate that Cu₂In₄Te₇ has relatively high ZT values that are similar to those of Cu₂Ga₄Te₇. High‐density polycrystalline bulk samples of Cu₂In₄Te₇ were prepared and their electrical resistivity (?), Seebeck coefficient (S), and thermal conductivity (κ) were measured. Cu₂In₄Te₇ has a maximum ZT of 0.3 at 700 K, with ?, S, and κ values of 62.1 × 10^–5 Ω m, 394 μV K^–1, and 0.61 W m^–1 K^–1, respectively. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Damage and lattice location studies in Hg implanted Hg1–xCdxTe

Abstract

Rutherford backscattering (RBS) and ion induced X-ray (PIXE) channeling experiments have been used to study the damage accompanying Hg and Al implantations into Hg_0.8Cd_0.2 Te and its annealing as well as to determine the location of Hg in the crystal.

The damage induced by the implantation of 300 keV Hg and 250 keV Al ions at room temperature was found from RBS channeling studies to reach a saturation level at doses of 1 × 10¹⁴ cm^?2 and 3 × 10¹⁴ cm^?2 respectively. The damage resembles that characteristic for extended defects and it anneals at ≈ 300°C.

The location of the constituents of Hg implanted Hg_0.8 Cd_0.2 Te was studied by PIXE channeling observing the characteristic X-rays for each element. Angular scans indicate that the channels are mostly blocked by Hg atoms for both unannealed and, to a lesser extent, annealed crystals. This observation supports the suggestion that interstitial Hg atoms may be responsible for the conductivity of Hg implanted Hg_1–x Cd_g Te.     

Li‐, Sb‐ and Ta‐modified (K,Na)NbO3 nanopowder prepared via a water‐based sol–gel method

Stable Li‐, Sb‐ and Ta‐modified (K, Na)NbO₃ (LTS‐KNN) sol and gel were successfully prepared via an economical water‐based sol–gel method. Simultaneous thermogravimetry and differential scanning calorimetry (TG‐DSC) and X‐ray diffraction showed that organic compounds were eliminated and a pure perovskite phase formed around 600 °C. Transmission electron microscopy showed that the LTS‐KNN particle size was in the range of 11–34 nm after decomposition at 600 °C. Moreover, high performance LTS‐KNN ceramic was successfully prepared at a low sintering temperature of 1000 °C by use of the nanopowder, and its room‐temperature d₃₃, K_p, K and loss are 311 pC/N, 46.8%, 1545 and 0.024, respectively. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Reinvestigation of the thermoelectric properties of Ag8GeTe6

High‐density polycrystalline samples (above 98% of the theoretical density) of Ag₈GeTe₆ were prepared by solid‐state reactions of Ag₂Te, GeTe, and Te, followed by hot‐pressing. The thermoelectric properties were measured at temperatures ranging from room temperature to around 700 K. The thermal conductivity values were extremely low (0.25 Wm^–1 K^–1 at room temperature), and consequently Ag₈GeTe₆ exhibited a relatively high thermoelectric figure of merit, ZT = 0.48 at 703 K. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

PVA-assisted synthesis and characterization of nano-crystalline La3+ and Mg2+ co-doped CeO2 electrolyte for intermediate-temperature solid oxide fuel cells

A series of nano-crystalline ceria-based solid solution electrolyte, Ce_0.8La_0.2?x Mg_xO_2?δ (x?=?0.0, 0.05, 0.10, 0.15, and 0.2), were synthesized via the polyvinyl alcohol (PVA) assisted combustion method, and then characterized to the crystalline structure, powder morphology, sintering micro-structure, and electrical properties. Present study showed that Ce_0.8La_0.2?x Mg _x O_2?δ was exceedingly stable as a cubic phase in all temperature range and exhibited fine crystals ranging from 15 to 20 nm. After sintering at 1,400 °C, the as-prepared pellets exhibited a dense micro-structure with 96 % of theoretical density. The electrical conductivity was studied using AC impedance spectroscopy and it was observed that the composition Ce_0.8La_0.1?Mg_0.1O_2?δ showed higher electrical conductivity of 0.020 S?cm^?1 at 700 °C. The thermal expansion was measured using dilatometer technique in the temperature range 30–1,000 °C. The average thermal expansion coefficient of Ce_0.8La_0.1?Mg_0.1O_2?δ was 12.37?×?10^?6 K^?1, which was higher than that of the commonly used SOFC electrolyte YSZ (~10.8?×?10^?6 K^?1).