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1.
Transition absorption of a photon by an electron passing through a boundary between two media with different permittivities is described both classically and quantum mechanically. Transition absorption is shown to make a substantial contribution to photoelectron emission at a metal/semicon‐ductor interface in nanoplasmonic systems, and is put forth as a possible microscopic mechanism of the surface photoelectric effect in photodetectors and solar cells containing plasmonic nanoparticles.

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2.
Pentacene thin‐film transistor with high‐κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine‐plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub‐threshold swing and lowest low‐frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM.

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3.
Perovskite‐like metal‐organic frameworks (MOFs) are hybrid materials of high interest for their potential in information storage technology, as Pb‐free substitutes for the widely used lead zirconate titanate (PZT) family of multiferroics. We report here a new, microwave‐assisted method of synthesis for perovskite‐like MOFs, which exploits the advantages of rapid and volumetric heating by microwaves in order to achieve synthesis within minutes, compared to days required by previously reported methods. The preliminary results demonstrate a broad control over the size and morphology of the products, by minor changes in the reaction conditions. An investigation of the effects of size and morphology on the magnetic and dielectric properties is presented here.

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4.
Despite the great promise of printed flexible electronics from 2D crystals, and especially graphene, few scalable applications have been reported so far that can be termed roll‐to‐roll compatible. Here we combine screen printed graphene with photonic annealing to realize radio‐frequency identification devices with a reading range of up to 4 meters. Most notably our approach leads to fatigue resistant devices showing less than 1% deterioration of electrical properties after 1000 bending cycles. The bending fatigue resistance demonstrated on a variety of technologically relevant plastic and paper substrates renders the material highly suitable for various printable wearable devices, where repeatable dynamic bending stress is expected during usage. All applied printing and post‐processing methods are compatible with roll‐to‐roll manufacturing and temperature sensitive flexible substrates providing a platform for the scalable manufacturing of mechanically stable and environmentally friendly graphene printed electronics.

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5.
The CuNi binary alloy can be significant as a catalyst for nitrogen‐doped (N‐doped) graphene growth considering controllable solubility of both carbon and nitrogen atoms. Here, we report for the first time the possibility of synthesizing substitutional N‐doped bilayer graphene on the binary alloy catalyst. Raman spectroscopy, atomic force microscopy and transmission electron microscopy analysis confirm the growth of bilayer and few‐layer graphene domains. X‐ray photoelectron spectroscopy analysis shows the presence of around 5.8 at% of nitrogen. Our finding shows that large N‐doped bilayer graphene domains can be synthesized on the CuNi binary alloy.

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6.
We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.

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7.
A Cu‐based organic–inorganic perovskite framework exhibits high‐temperature ferroelectricity with strong magnetoelectric effects. Both electric field control of magnetization and magnetic field control of polarization are realized. Theoretical calculations suggest that a new mechanism of hybrid improper ferroelectricity arising from the Jahn–Teller distortions of magnetic metal ions and tilting of the organic cations are responsible for the peculiar multiferroic behaviors.

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8.
The α‐PbO2‐type TiO2 is synthesized under high‐pressure and high‐temperature environment and it shows higher photocatalytic activity as compared to rutile and anatase under UV irradiation. The reduction in α‐PbO2‐type TiO2 induces visible‐light photocatalytic activity. These results indicate that α‐PbO2‐type TiO2 is an important candidate material for use in a photocatalytic matrix.

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9.
We present a detailed temperature‐dependent (4–300 K) spectroscopic study of DyMnO3 single crystals with distorted perovskite structure. Energies of 36 crystal‐field levels of Dy3+ in paramagnetic DyMnO3 were determined. The Dy3+ ground Kramers doublet does not split at and splits below Tlock = 18 K. The splitting grows fast at temperatures near and reaches Δ0 ≈ 11 ± 2 cm–1 at 4 K. Using the experimental temperature dependence Δ0(T), we calculate the dysprosium magnetic moment mDy(T) and the dysprosium contribution into specific heat and magnetic susceptibility. Analysing all the experimental data, we conclude that the Dy–Mn interaction is of the Dzyaloshinskii–Moriya type.

Intensity map in the temperature–wave number coordinates for a spectral line corresponding to the f–f transition of Dy3+ in DyMnO3 and a scheme of the splitting of the Dy ground Kramers doublet. Arrows represent Dy magnetic moments.  相似文献   


10.
We found that non‐magnetic defects in two‐dimensional topological insulators induce bound states of two kinds for each spin orientation: electron‐ and hole‐like states. Depending on the sign of the defect potential these states can be also of two kinds with different distribution of the electron density. The density has a maximum or minimum in the center. A surprising effect caused by the topological order is a singular dependence of the bound‐state energy on the defect potential.

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11.
Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ~10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.

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12.
An observation of negative refraction in the naturally obtained composition of graphene and barium ferrite is reported. The capacitance and inductance measurements revealed the electric and magnetic resonances accompanied with the negative values of permittivity and permeability in the overlapped frequency range. According to the “left‐handed” media approach such a material is characterized by negative refraction. The derived values of the real part of refractive index are negative at the frequencies above 500 MHz.

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13.
Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub‐micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi‐, Se‐, and Te‐bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on‐going searches for Majorana fermions (Mourik et al., Science 336 , 1003 (2012) and Cook et al., Rev. B 86 , 155431 (2012) [1, 2]).

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14.
Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X‐ray diffraction in free‐standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X‐ray irradiation if additionally an external static electric field is applied.

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15.
Si thin films on glass grown by liquid phase crystallization (LPC) exhibit large grains resembling those in multicrystalline Si wafers. The present work gives direct insight into how planar defects in LPC‐Si thin films influence the device performance of the corresponding solar cells by acquiring electron‐backscatter diffraction maps and measuring solar cell parameters on the same identical positions. By this approach, it was possible to demonstrate how low scanning velocities of the laser line during the crystallization lead to lower densities of grain boundaries, to improved charge‐carrier diffusion lengths, and hence to improved device performances.

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16.
Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO3 dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO3 would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.

Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal.  相似文献   


17.
An optimized test structure to study rear surface passivation in Cu(In,Ga)Se2 (CIGS) solar cells by means of photoluminescence (PL) is developed and tested. The structure – illustrated in the abstract figure – is examined from the rear side. To enable such rear PL assessment, a semi‐transparent ultra‐thin Mo layer has been developed and integrated in place of the normal rear contact. The main advantages of this approach are (i) a simplified representation of a rear surface passivated CIGS solar cell is possible, (ii) it is possible to assess PL responses originating close to the probed rear surface, and (iii) a stable PL response as a function of air exposure time is obtained. In this work, PL measurements of such structures with and without rear surface passivation layers have been compared, and the measured improvement in PL intensity for the passivated structures is associated with enhanced CIGS rear interface properties.

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18.
Nonlinear optical microscopy (NLOM) relies on nonlinear light–matter interactions to provide images from larger depths within biological structures compared to conventional confocal fluorescence microscopy. These nonlinear light–matter interactions include multiphoton excitation fluorescence (MPEF), second‐harmonic generation (SHG), coherent anti‐Stokes Raman scattering (CARS), and stimulated Raman scattering (SRS). This review discusses the theories of and instrumentation for various NLOM techniques, with a particular focus on endogenous signals and exogenous probes. These signals and probes expand the breadth of information that optical imaging can provide. We also discuss the application of NLOM in biomedical research, including tissue engineering, drug delivery and clinical diagnostics. Current technological limitations are also discussed.

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19.
Phosphorus prefers three‐connected configurations due to its inequivalent sp3‐hybridization. In the past year, many quasi two‐dimensional three‐connected networks were proposed as possible phosphorene allotropes. In this Letter, a new quasi two‐dimensional three‐connected network is proposed as a new potential phosphorene allotrope (Hex‐star). Based on first‐principles method calculations, the structure, stability and electronic properties of Hex‐star were systematically investigated. Our results indicate that Hex‐star is dynamically stable and it is a semiconductor with quasi‐direct band gap of 1.81 eV based on HSE06 method. Perspective top view (left) and Magen–David‐like orthographic top view (right) of Hex‐star phosphorene.

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20.
The excitons in the orthorhombic phase of the perovskite CH3NH3PbI3 are studied using the effective mass approximation. The electron–hole interaction is screened by a distance‐dependent dielectric function, as described by the Haken potential or the Pollmann–Büttner potential. The energy spectrum and the eigenfunctions are calculated for both cases. The results show that the Pollmann–Büttner model, using the corresponding parameters obtained from ab initio calculations, provides better agreement with the experimental results.

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