Co掺杂ZnO纳米棒的水热法制备及其光致发光性能

以Zn(NO3)2·6H2O 和Co(NO3)2·6H2O为原料, 通过水热法在较低温度下制备了纯ZnO和Co掺杂的ZnO(ZnO:Co)纳米棒. 利用XRD、EDS、TEM和HRTEM对样品进行了表征, 结合光致发光(PL)谱研究了样品的PL性能. 结果表明, 水热法制备纯ZnO和ZnO:Co纳米棒均具有较好的结晶度. Co2+是以替代的形式进入ZnO晶格, 掺入量为2%(原子分数)左右. 纯的ZnO纳米棒平均直径约为20 nm, 平均长度约为180 nm; 掺杂样品的平均直径值约为15 nm, 平均长度约为200 nm左右; Co掺杂轻微地影响ZnO纳米棒的生长. 另外, Co掺杂能够调整ZnO纳米棒的能带结构、提高表面态含量, 进而使得ZnO:Co纳米棒的紫外发光峰位红移, 可见光发光能力增强.     

砷掺杂的ZnO纳米线的发光特性

在GaAs基底上制备了高质量的直径为10～100 nm、长度约几个微米的As掺杂ZnO纳米线. 扫描电镜、EDX分析及透射电镜分析显示, ZnO纳米线具有较好的晶态结构. 对As掺杂前后的ZnO纳米线进行光学特性测量, 结果表明, ZnO纳米线在385 nm处有较强的紫外发光峰, 在505 nm左右有较弱的蓝绿发光峰; As掺杂较大地改变了ZnO纳米线的发光性质, 使本征发光峰移到393 nm处, 蓝绿发光强度有了很大程度的提高.     

ZnO纳米线形态对其光致发光性能的影响

以多孔氧化铝膜为模板,电化学沉积出Zn纳米线,再通过高温氧化得到ZnO纳米线阵列。通过改变制备多孔氧化铝模板的工艺参数来改变模板纳米孔径,进而改变ZnO纳米线的直径,得到不同形态的ZnO纳米线阵列。应用X射线衍射仪、透射电子显微镜测试技术表征了ZnO纳米线的结构与形貌。结果发现,X射线衍射时会出现随ZnO纳米线直径增大衍射峰增多和增强的现象。采用荧光光谱仪测试样品的光致发光性能,通过Gaussian原理对谱峰的拟合分析了ZnO纳米线形态对其光致发光光谱的影响。结果表明,随着纳米线直径从30nm至60nm依次增大,其结晶性和化学计量比逐渐变好。近紫外区和蓝光区的发射峰随着纳米线直径的增大而蓝移,而纳米线直径为60nm的样品则出现随直径增大而红移的现象。结果可见,直径在55~60nm间的某点将是ZnO纳米线的结构和光致发光性能变化的临界点。     

三维花状ZnO纳米材料的制备及发光性质

常压下用溶胶凝胶和化学溶液生长两步法在3种不同的衬底上制备出三维花状ZnO纳米材料.采用X射线衍射仪(XRD)、扫描电镜(SEM)、透射电镜(TEM)、选区电子衍射(SAED)、紫外吸收(UV)光谱和光致发光光谱(PL)对样品进行分析,结果表明,花状ZnO的组成单元为沿c轴方向生长的ZnO纳米棒,直径约为100 nm,...     

ZnO纳米棒薄膜的湿化学法制备及光致发光特性

在80 ℃水浴下, 采用简易的湿化学法在不导电玻璃基底上制备了ZnO纳米棒阵列, 利用X射线衍射仪(XRD)和场发射扫描电镜(FE-SEM)对样品的结构形貌进行了表征. 结果表明, 晶化30 min所得产物为六方纤锌矿相的ZnO纳米棒, 直径大约为80~90 nm. 为了分析不同的低温退火温度和退火气氛对其光致发光性能的影响, 研究了ZnO纳米棒薄膜在不同的后处理条件下的光致发光谱(PL). 实验结果表明, 在O₂气氛下于450 ℃退火1 h后, ZnO纳米棒薄膜的红光发射(约650 nm)强度相对在空气和5%H₂/95%N₂气氛下退火的样品变得更强, 而且该样品的激发波长范围(200~370 nm)与近紫外发光二极管(LEDs)的发射波长范围(350~420 nm)匹配得很好.     

水热合成Fe3+掺杂ZnO复合材料及其光催化活性

以Zn(Ac)2·2H2O、Fe(NO3)3·9H2O和NaOH为原料,采用水热法合成了Fe3+掺杂ZnO复合材料. 并用X射线衍射和扫描电子显微镜测试技术对合成样品的结构和形貌进行了表征. 结果表明,Fe3+掺杂ZnO合成产物为直棒状,直径为500 nm,长度为3 μm左右. 样品的紫外可见漫反射分析结果表明,在300～500 nm紫外可见光区域均有强的吸收. Fe3+掺杂ZnO作为光催化剂降解有机染料性能优于纯ZnO材料.     

单根ZnO纳米线的室温气敏特性

利用改进的CVD法制备了(002)面取向生长的ZnO纳米线, 通过光刻/剥离的自下而上的组装技术制备了基于单根ZnO纳米线的气敏元件, 其中的ZnO纳米线直径为50-300 nm, 有效长度为2-10 μm. 测试表明在室温条件下, 元件对浓度为500 μL·L-1的氧气和乙醇的灵敏度可以分别达到1.3 和1.2, 而气敏响应时间分别为10 和5 s, 由于单根纳米线的一维小尺寸结构加剧了电流的自加热效应, 因此元件在外界环境为室温的条件下的灵敏度才略有提高.     

采用高分子自组装ZnO纳米线及其形成机理

介绍了一种能在各种晶面的硅衬底上制备垂直于衬底取向生长的ZnO纳米线阵列的新方法. 该法采用高分子络合和低温氧化烧结反应, 以聚乙烯醇(PVA)高分子材料作为自组装络合载体来控制晶体成核和生长. 首先通过PVA侧链上均匀分布的极性基团羟基(—OH)与锌盐溶液中的Zn²⁺离子发生络合作用, 然后滴加氨水调节络合溶液pH值为8.5±0.1, 使络离子Zn²⁺转变为Zn(OH)₂, 再将硅片浸入此溶液中, 从而在硅衬底表面得到较均匀的Zn(OH)₂纳米点, 随后在125 ℃左右Zn(OH)₂纳米点通过热分解转化为ZnO纳米点, 其后在420 ℃烧结过程中衬底上的ZnO纳米点在PVA高分子网络骨架对其直径的限域下逐渐取向生长成ZnO纳米线, 并且烧结初期PVA碳化形成的碳通过碳热还原ZnO为Zn, 再在氧气氛中氧化为ZnO的方式在纳米线顶端形成了催化活性点, 促进了纳米线顶端ZnO的吸收. 烧结后碳逐渐氧化被完全去除. 采用场发射扫描电镜(FE-SEM)、透射电镜(TEM, HR-TEM)和X射线衍射(XRD)对纳米线的分析结果表明, ZnO纳米线在硅衬底上分布均匀, 具有六方纤锌矿结构, 并且大多沿[0001]方向择优取向生长, 直径为20～80 nm, 长度可从0.5至几微米. 提出了聚合物控制ZnO结晶和形貌的网络骨架限域模型以解释纳米线的生长行为.     

Ni 掺杂ZnO纳米线的电子结构与磁性

采用自旋极化密度泛函理论系统研究了Ni掺杂ZnO纳米线的电子结构、磁学和光学性质.磁学性质计算结果显示六种Ni掺杂ZnO纳米线的磁性耦合体系出现了铁磁(FM)、反铁磁(AFM)和顺磁(PM)二种不同的耦合状态.能量计算结果表明Ni原子在纳米线外表面沿[0001]方向替代Zn原子时能量最低,体系的AFM耦合相对稳定,AFM体系表现出金属性.态密度计算结果显示FM耦合在费米能级附近出现了明显的自旋极化现象,发生了强烈的Ni 3d和O 2p杂化效应,掺杂产生的磁矩主要来源于Ni 3d未成对轨道电子和部分O 2p轨道电子的贡献,FM耦合表现出半金属性.另外,光学性质计算结果显示Ni掺杂ZnO纳米线的远紫外吸收峰发生了红移现象,而380 nm附近的近紫外吸收峰发生了明显的蓝移现象,在整个紫外区都表现出了优异的发光性能.以上结果表明Ni掺杂ZnO纳米线是一种很有前途的磁光电子材料.     

纳米ZnO的阳极消耗法制备和表征

采用阳极消耗法制备了纳米ZnO粉体,并利用XRD,TEM,XPS,UV-V is和PL测试技术对样品进行了表征.结果表明,所制样品为纤锌矿结构的纳米ZnO,颗粒呈类球形,平均粒径15 nm,具有很强的紫外吸收能力.位于531.44 eV的O1 s峰和PL谱上的绿带共同证明了氧空位存在,纳米ZnO的绿光发射带来自氧空位电子与价带空穴的辐射复合.     

Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures

In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.     

Preparation and properties of ternary ZnMgO nanowires

Zn0.84Mg0.16O and Zn0.12Mg0.88O nanowires with different morphology have been synthesized by a catalyst-free thermal evaporation method using Zn and Mg metals as the raw materials. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) measurements were used to determine the structure and optical properties of the obtained products. The obtained nanowires have diameters in a range of 30 nm-80 nm, crystallized well as hexagonal and cubic phase, with preferred orientation along the c-axis and a-axis for the two samples of Zn0.84Mg0.16O and Zn0.12Mg0.88O, respectively. Room-temperature PL at wavelengths of 384.4 and 495.8 nm has been observed for the sample of Zn0.84Mg0.16O. Upon annealing in Ar ambient, the emission peaks in PL spectra show a clearly blue shift.     

Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method

Self-assembled zinc oxide (ZnO) and indium-doping zinc oxide (ZnO:In) nanorod thin films were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel method. The samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), Raman-scattering spectroscopy, room-temperature photoluminescence (PL) spectra, and temperature-dependent PL spectra measurements. XRD and Raman spectra illustrated that there were no single In2O3 phase in ZnO lattice after indium doping. The PL spectra of ZnO showed a strong UV emission band located at 394 nm and a very weak visible emission associated with deep-level defects. Indium incorporation induced the shift of optical band gap, quenching of the near-band-edge photoluminescence and enhanced LO mode multiphonon resonant Raman scattering in ZnO crystals at different temperatures. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The local state emission peak of ZnO:In samples at 3.37 eV is observed in low-temperature PL spectra. The near-band-edge emission peak at room temperature was a mixture of excitons and impurity-related transitions for both of two samples.     

ZnO纳米线阵列的电沉积法制备及表征(英文)

利用直流电沉积方法在多孔氧化铝模板的孔洞中生成锌纳米线,在氧气氛围中,于800°C下氧化2h,将氧化铝中的锌氧化成氧化锌.本研究利用氧气氛围进行锌的氧化,大大提高了传统方法的氧化锌纳米线的制备效率.用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)和X射线衍射仪(XRD)对其形貌及成分进行表征和分析,结果表明,氧化铝模板的有序孔洞中填充了大尺寸、均匀连续的多晶态氧化锌纳米线.纳米线具有约1000:1的高纵横比,其长度等于氧化铝模板的厚度,直径约为80nm.光致发光(PL)光谱表明,氧化锌纳米线在504nm处有由于氧空位引起的较强蓝绿光发射.这为进一步研究ZnO/AAO组装体发学性质和开发新型功能器件提供了基础.     

Enhanced ultraviolet emission from ZnS-coated ZnO nanowires fabricated by self-assembling method

A simple chemical route for ZnS-coated ZnO nanowires with preferential (002) orientation is reported. Sodium sulfide and zinc nitrate were employed to supply S and Zn atoms at 60 degrees C to form ZnS-coated ZnO nanowires structures. Electron diffraction measurement shows that the ZnO/ZnS core-shell nanostructure is single crystalline. Interesting features are found in the photoluminescence (PL) spectra of ZnS-coated ZnO nanostructures. After coating, the UV emission of nanorods is dramatically enhanced at the expense of the green emission. The core/shell structure with higher band gap shell material and reduced surface states should be responsible for this PL enhancement.     

Raman scattering and efficient UV photoluminescence from well-aligned ZnO nanowires epitaxially grown on GaN buffer layer

Optical phonon confinement and efficient UV emission of ZnO nanowires were investigated in use of resonant Raman scattering (RRS) and photoluminescence (PL). The high-quality ZnO nanowires with diameters of 80-100 nm and lengths of several micrometers were epitaxially grown through a simple low-pressure vapor-phase deposition method at temperature 550 degrees C on the precoated GaN(0001) buffer layer. The increasing intensity ratio of n-order longitudinal optical (LO) phonon (A(1)(nLO)/E(1)(nLO)) with increasing scattering order in RRS reveals the phonon quantum confinement as shrinking the diameter of ZnO nanowires. The exciton-related recombination near the band-edge transition dominate the UV emissions at room temperature as well as at low temperature that exhibits almost no other nonstoichiometric defects in the ZnO nanowires.     

Gold tubes membrane with novel morphology replicated from ZnO template

Gold tubes membrane with novel morphology was fabricated on glass substrate by electroless plating gold on ZnO crystals array, and then annealing and removing the ZnO template by acid erosion. The morphology and size of the gold tubes membrane were decided by ZnO template. Hexagonal gold tubes membrane and double-wall gold tubes membrane were obtained, which enjoys some potential usage in electrode modification or chemical separation due to their huge surface area and unique geometric structure. SEM images show that those gold tubes in membrane are hollowed hexagonal columns with a closed head and an open bottom. Further researches found that two main factors determined the success of replication: the gold seeds (4-5 nm in diameter) immobilized on ZnO surface through APTMS (3-Aminopropyl-trimethoxysilane) before gold electroless plating and the annealing condition after electroless plating.     

一种新颖的ZnO纳米结构的自组装合成及发光性能

采用水热法制备了花生状ZnO微米棒, 通过XRD, EDX和FE-SEM等技术分析了其物相组成、形貌及尺寸; 通过变温荧光光谱测试及对所得谱图的高斯拟合研究了该ZnO微米棒的荧光性能, 并将其在300 K时所得的谱图与常规室温荧光谱图进行了比较. XRD, EDX及FE-SEM测试结果表明, 该产物为长约10 μm, 直径约2 μm的花生状六方纤锌矿ZnO微米棒; 荧光测试结果表明, 该ZnO微米棒有紫外峰、紫峰和绿峰3个发光峰, 当温度从8 K升至300 K时, 各峰的强度均有所减弱, 同时紫外峰出现蓝移, 绿峰出现红移, 紫峰峰位出现特殊的“S”形(红移-蓝移-红移)移动. 并对各峰的产生及随温度变化的规律进行了探讨.