软X射线辐射加热金盘靶的X射线再发射

用两台时间关联的软X射线能谱仪观测软X射线辐射((2—6)×10¹²W·cm^-2)加热金盘靶的X射线再发射-从再发射X射线的时间能谱可看出能谱被“软”化-根据加热脉冲时间修正烧蚀热波的稳态自相似解,分析X射线再发射的时间演变过程- 关键词：     

Positron investigations of free-volume elements in polymer gas-separation membranes

This work is a part of an investigation aimed at converting the positron method into a tool for quantitative investigations of microdefects in polymers. The number (10¹⁹ cm⁻³) and effective radii (0.2–2.8 nm) of elementary free volumes in polymer gas-separation membranes polytrimethyl silylpropine (PTMSP) and porous polyphenylene oxide (PPO 200 and 70 m²/g) are estimated on the basis of positron data. The calculations are facilitated by using the mutually complementary programs PATFIT and CONTIN as well as by the possibility of estimating the diffusion coefficients of positronium in PPO samples having different specific surface areas. Fiz. Tverd. Tela (St. Petersburg) 40, 164–167 (January 1998)     

Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500 °C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5×10¹⁷ cm^-3. Received: 4 September 1998 / Accepted: 5 January 1999 / Published online: 28 April 1999     

Slow positrons and thermal Ps production using thin foils

A one-dimensional diffusion model for positrons implanted in Cu and Al single crystal thin foils was solved. The fraction of thermalized positrons reaching the surface was obtained for various film thicknesses as a function of the incident positron energy in a transmission-mode geometry. The results indicate that for foil thicknesses of the order of the diffusion length (1000 Å) the reemission fraction is roughly half the fraction of a semi-infinite crystal. For thicker foils the annihilation of the positrons in the bulk and smearing effects due to a higher implantation energy effectively reduce the surface reemission. In this paper it is shown that thin foils can also be used to efficiently produce low-energy (from thermal to a few eV) Ps beams, physically separated from the primary positron beam.     

Depth distribution of SiD and SiD2 complexes in silicon bombarded by 10 keV D+ 2 ion

Abstract

A secondary ion mass spectrometry (SIMS) and a neutral molecule mass spectrometry (NMMS) study of deuterium trapping in a single crystalline silicon as a result of ion irradiation at fluences 10^16--10¹⁸ cm-² are presented. An attempt has been made to observe the formation and evolution of defect profiles containing one or two deuterium atoms (SiD- and SiD₂-complexes). The proposed model of radiation-induced sequential reactions describes satisfactorily the accumulation of SiD- and SiD₂-complexes and the reemission of D₂-molecules.     

Intense slow positron production at the 15 MeV LINAC at Argonne National Laboratory

An intense slow positron beam using a 15 MeV LINAC (average current 1.25 × 10¹⁵ e⁻/s) at the Radiation and Photochemistry Group, Chemistry Division of Argonne National Laboratory (ANL) has been proposed and studied. Computer simulated results optimizing the positron yield and distribution of energy and angle show that a slow positron production at 10¹⁰ e⁺/s is possible. A proposed design of an intense slow positron beam with optimal conditions of incident electron, converter/moderator configurations, and extraction/transportation is presented.     

A possible spectrum of positron states in porous silicon

A kinetic scheme of transformations and annihilation decays of positron and positronium states is considered in the bulk of a crystal in the crystal skeleton, and on the surface and in the bulk of pores of porous silicon. Formulas relating the intensities of temporal components of annihilation decay to the rates of decays and transformations of positron and positronium states in the pore volume are derived. The rate of interaction with the pore surface, accompanied by the formation of the surface state of a positronium atom, is estimated at 10⁷–10⁸ s^?1, while the estimated value for the pore radius is ≈2 nm.     

Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions

2 ⁺ and Al⁺ at temperatures from room temperature (RT) to 1200 °C at doses of 10¹³ and 10¹⁵/cm². It is found from Doppler broadening spectra of annihilation gamma-rays obtained by varying the incident positron energy that hot-implantation gives rise to clustering of vacancies, whereas it suppresses amorphization and diminishes the thickness of damaged layers. The average size of such clusters increases with increasing implantation dose and temperature. Vacancy clustering by hot-implantation can be interpreted by the combination of vacancies during implantation. Vacancy type defects in the low-dose (10¹³/cm²) implanted samples are found to be removed by annealing at 1400 °C, whereas large vacancy clusters still remain after 1400 °C annealing in the high-dose (1 0¹⁵/cm²) implanted samples. It is also derived from the depth profile of positron diffusion length that positron scattering centers are produced after annealing at 1400 °C in all implanted samples. Received: 7 March 1997/Accepted: 6 May 1997     

Experimental study of positron motion in Kapton

The drift of positrons under the action of an electric field in Kapton has been observed by using a variable-energy positron beam and the Doppler broadening technique. Even if the maximum applied field (2 MV/cm) is so high that the electrostatic work for a displacement of less than 0.15 nm is larger than the thermal energy, the experimental data can be fit by the diffusion model with a field-independent mobility. The best-fit value of the mobility (ca. 1×10^–3 cm² V^–1 s^–1) is extremely low in comparison with other dielectrics. The results are discussed with regards to the interaction of positrons with the molecular field.     

Irradiation-induced atomic defects in SiC studied by positron annihilation

The present paper reports on positron lifetime measurements on atomic defects in SiC after low-temperature (80 K) electron irradiation of low (0.47 MeV) and high (2.5 MeV) electron energies and doses from 1.8×10¹⁷ to 1.9×10¹⁹ e/cm² as well as after subsequent isochronal annealing up to 1900 K. For these studies the single crystals of nitrogen doped (2–3×10¹⁸ cm^–3) SiC grown by a modified Lely technique with hexagonal structure (6H polytype) were used.According to the positron lifetime measurements, very different types of vacancy-like positron traps are introducted after irradiation with electrons of either low or high energy. The formation of defect agglomerates and their decay at high temperatures is studied during isochronal annealing and related to earlier studies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Estimates of electron-positron pair production in the interaction of high-power laser radiation with high-Z targets

Electron-positron production processes occurring in the interaction of 10¹⁸–10²⁰ W/cm² laser radiation with high-Z targets are examined. Computational results are presented for the pair production and the positron yield from the target with allowance for the contribution of pair production processes due to electrons and bremsstrahlung photons. Monte Carlo simulations using the PRIZMA code confirm the estimates obtained. The possible positron yield from high-Z targets irradiated with 10²–10³ TW laser radiation is estimated to be 10⁹–10¹¹. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 4, 239–244 (25 February 1998)     

Influence of surface conditions on thermal positron reemission spectra from W(100)

Our measurements trace the temporal dependence of positron reemission spectral features, namely, the reemission intensity, energy and angular distributions with post-cleaning time and oxygen exposure. The unwanted inelastic component in the reemission spectra can be kept at less than 6 % of the total reemitted positrons during long and continuous operation by simply ensuring the cleanliness of the sample with better vacuum level. Simultaneously the other optimized spectral features of the beam can be maintained except for the reemission spectral intensity which decreased with increasing time after cleaning. Even though oxygen at high temperature is used normally in the cleaning process of the tungsten moderators, exposure of the sample to oxygen at room temperature caused an exponential reduction in the reemission yield with exposure time.     

Positron annihilation spectroscopic studies of Mn substitution-induced cubic to tetragonal transformation in ZnFe2–xMnxO4 (x = 0.0–2.0) spinel nanocrystallites

The replacement of cations at the B-sites in the spinel ferrite ZnFe₂O₄ by Mn³⁺ ions brings in several interesting changes, the most striking among them being a transformation from the spinel cubic structure to a body-centered tetragonal one. Concomitantly, there are variations in the nanocrystallite sizes and also in the lattice parameters. These are examined through high-precision X-ray diffraction measurements and transmission electron microscopic analysis. A more interesting aspect is the success of positron annihilation spectroscopy comprising of the measurements of positron lifetime and coincidence Doppler broadening measurements in understanding the effects of cation replacement and the resultant generation of vacancy-type defects. There are definite changes in the positron lifetimes and intensities which show positron trapping in trivacancy-type defect clusters and the nanocrystallite surfaces. The presence of ortho-positronium atoms within the extended intercrystallite region is also identified, although in small concentrations. The cubic to tetragonal transformation is indicated through definite decrease in the values of the positron lifetimes. We also performed a model analysis to predict the expected effect of substitution on the positron lifetime in the bulk of the sample and the experimentally obtained positron lifetimes significantly differed, indirectly hinting at the possibility of a structural transformation. Finally, Mössbauer spectroscopic studies have indicated a ferromagnetic nature for one of the samples, i.e. the one with Mn³⁺ doping concentration x = 0.4, which incidentally had the lowest crystallite size ~10 nm.     

Positron annihilation in electron-irradiated n-type gap crystals

Abstract

The defects in n-GaP crystals irradiated by 2.3 MeV electrons up to 1 × 10¹⁹ cm^?2 at RT were studied by means of positron annihilation (angular correlation) and electrical property measurements. It was found that positrons are trapped in some radiation-induced vacancy-type defects (acceptors) but that the effect saturates at high electron fluences (D1 × 10¹⁸ cm^?2). The trapping rate in irradiated samples increases with temperature in the range 77–300 K. Post-irradiation isochronal annealing reveals the positron traps clustering at about 200–280°C. All positron sensitive radiation-induced defects disappear upon annealing up to 500°C.     

金原子团簇的分频散射光谱研究

液相金原子团簇是一种非线性光学介质.它在580nm处产生一个最强共振散射峰.当激发波长为290nm(1.03×10¹⁵Hz)时,液相金原子团簇在580nm(1/2×1.03×10¹⁵Hz)和870nm(1/3×1.03×10¹⁵Hz)分别产生一个1/2分频和1/3分频散射峰;当激发波长为580nm(5.02×10¹⁴Hz)时在290nm(2×5.02×10^-14Hz)和870nm(2/3×5.02×10¹⁴Hz)分别产生一个2倍频和2/3分频散射峰;当激发波长为870nm(3.34×10¹⁴Hz)时在580nm(3/2×3.34×10¹⁴Hz)和290nm(3×3.34×10¹⁴Hz)分别产生一个3/2分频和3倍频散射峰.分频散射和倍频散射峰与共振散射峰具有相似的散射行为.从激励光与液相金原子团簇相互作用的运动方程出发,根据傅氏变换理论,较好地解释了液相金原子团簇产生的一些非线性散射光谱.     

High-intensity and high-brightness source of moderated positrons using a brilliant γ beam

Presently, large efforts are conducted toward the development of highly brilliant γ beams via Compton back scattering of photons from a high-brilliance electron beam, either on the basis of a normal-conducting electron linac or a (super-conducting) Energy Recovery Linac (ERL). Particularly, ERLs provide an extremely brilliant electron beam, thus enabling the generation of highest-quality γ beams. A 2.5 MeV γ beam with an envisaged intensity of 10¹⁵ photons s⁻¹, as ultimately envisaged for an ERL-based γ-beam facility, narrow band width (10⁻³), and extremely low emittance (10⁻⁴ mm² mrad²) offers the possibility to produce a high-intensity bright polarized positron beam. Pair production in a face-on irradiated W converter foil (200 μm thick, 10 mm long) would lead to the emission of 2×10¹³ (fast) positrons per second, which is four orders of magnitude higher compared to strong radioactive ²²Na sources conventionally used in the laboratory. Using a stack of converter foils and subsequent positron moderation, a high-intensity low-energy beam of moderated positrons can be produced. Two different source setups are presented: a high-brightness positron beam with a diameter as low as 0.2 mm, and a high-intensity beam of 3×10¹¹ moderated positrons per second. Hence, profiting from an improved moderation efficiency, the envisaged positron intensity would exceed that of present high-intensity positron sources by a factor of 100.     

Small-angle neutron scattering study of the nano-sized features in an oxide dispersion-strengthened Fe12Cr alloy

Small-angle neutron scattering experiments, along with positron lifetime measurements and transmission electron microscopy observations, were performed on samples of an oxide dispersion-strengthened (ODS) Fe12Cr alloy and its non-ODS counterpart in order to characterize their nano-sized features. The nuclear and magnetic scattering data were analysed using the maximum entropy approach for obtaining the size distribution of the scattering centres in these materials. The positron annihilation results and the TEM information have made possible an interpretation of the volume distribution of the scattering centres having sizes below ~16 nm and their proper quantitative analyses. The smaller scattering centres in the ODS alloy exhibit distributions with modal values at ~6–7 and 12–14 nm. The peak at ~6–7 nm appears to be due to the overlapping of more than one type of scattering centres, while the one at ~12–14 nm can be exclusively attributed to the Y-rich centres. The quantitative analysis of the magnetic scattering data yields a volume fraction and number density of the Y-rich particles estimated in 0.70?±?0.03% and 0.77 × 10²² m^?3, respectively.     

Surface and bulk investigations at the high intensity positron beam facility NEPOMUC

The NEutron-induced POsitron source MUniCh (NEPOMUC) at the research reactor FRM II delivers a low-energy positron beam (E = 15-1000 eV) of high intensity in the range between 4 × 10⁷ and 5 × 10⁸ moderated positrons per second. At present four experimental facilities are in operation at NEPOMUC: a coincident Doppler-broadening spectrometer (CDBS) for defect spectroscopy and investigations of the chemical vicinity of defects, a positron annihilation-induced Auger-electron spectrometer (PAES) for surface studies and an apparatus for the production of the negatively charged positronium ion Ps⁻. Recently, the pulsed low-energy positron system (PLEPS) has been connected to the NEPOMUC beam line, and first positron lifetime spectra were recorded within short measurement times. A positron remoderation unit which is operated with a tungsten single crystal in back reflection geometry has been implemented in order to improve the beam brilliance. An overview of NEPOMUC's status, experimental results and recent developments at the running spectrometers are presented.     

Positron annihilation in boron-implanted n-type silicon

The ion damaged effect and subsequent isothermal annealing in boron-implanted Si was studied by positron annihilation lifetime measurements. The mean positron lifetime in preimplanted n-type Si is 243 psec. The variation of mean lifetime is detectable when the implanted boron dose is greater than 1.0x10¹⁵/cm². The saturated mean positron lifetime (247 psec) occurs when the implantation dose reaches 2.5x10¹⁵/cm². The mean electron density of the positron sensitive defects is estimated to be about 85% less than that in the perfect parts of the crystal. Isothermal annealing was held in every 5-minute step at 1000°C. In the first step, the positron lifetime in the implanted sample increases slightly and then decreases completely to its initial state in the 3rd step. Sheet resistance of the sample monitored by 4-point probe method has been found closely related to the positron lifetime.     

Improved slow-positron yield using a single crystal tungsten moderator

A well-annealed W(110) single crystal was used as a fast-to-slow positron moderator. The measured moderator efficiency at room temperature using a⁵⁸Co positron source in the backscattering geometry is =(3.2±0.4)×10^–3, roughly a factor of three better than for the best previously reported Cu(111)+S moderator. We find a stable positron moderation efficiency over a period of several weeks when maintained at pressures around 10^–9 Torr and an energy spreadE = 0.7 eV of the emitted slow positrons. An initial attempt was made to fabricate a hybrid Cu on W(110) moderator, which yielded of about 1.2×10^–3 after annealing.