GaN基蓝光发光二极管的波长稳定性研究

尽管GaN基蓝绿光发光二极管（LED）已进入大规模商品化阶段，但其发光波长随注入电流的变化仍是一个尚未解决的关键技术难题.同时，蓝绿光LED电注入发光光谱的半高全宽多为25nm以上.通过优化LED器件材料的生长条件和总应变量，获得了高质量的InGaN/GaN多量子阱LED外延片.由此制作的LED器件在0—120?mA的注入电流下，发光波长变化小于1nm.在20mA的正向电流下，其光谱半高全宽只有18nm，且随注入电流变化较小. 关键词： GaN 发光二极管 波长稳定性     

绿光LED激发荧光的研究

介绍了绿光LED作为荧光激发光源的可行性。使用波长为 5 30nm的超高亮度绿光LED对荧光物质四氯四溴荧光素 (C2 0 H2 Br4 Cl4 Na2 O5)的荧光发射进行了研究。设计了小巧的荧光液池 ,将四个LED分别安置于液池侧面 ,聚光后的光束交汇于液池中同一位置以提高激发光的强度 ;使用 1kHz方波调制LED ,运用分光光度计方法 ,接收到波长为 5 70nm的荧光信号     

不同波长蓝光LED对人体光生物节律效应的影响

以30名视力正常的学生为研究对象,采用剂量作业法、生理参数法和疲劳评价法研究了人体在峰值波长分别为468,457,453 nm的蓝光LED照明下的光生物节律效应。结果表明:在剂量作业法中,蓝光LED对错误率、工作速度和脑力工作指数的影响均为453 nm<457 nm<468 nm;在生理参数法中,468 nm蓝光LED对脉搏的变化影响最大,对收缩/舒张压的影响不明显;在疲劳评价法中,蓝光LED对人体舒适度的影响为453 nm<457 nm<468 nm。综上所述,在3种峰值波长蓝光中,468 nm的蓝光对人体光生物节律影响最大。     

用于POF的高性能共振腔发光二极管

提出用AlGaAs材料为n型下DBR,AlGaInP材料为p型上DBR,GaInP/AlGaInP多量子阱为有源区来制备650nm波长的共振腔发光二极管（RCLED）.用传输矩阵法对器件的结构进行了理论设计,并制备了RCLED和普通LED两种结构.测试结果表明,RCLED有更高的发光效率,是普通LED的近1.3倍,当注入电流从3mA增加到30mA时,RCLED的峰值波长只变化了1nm,而普通LED的波长则变化了7nm,且RCLED的光谱半宽窄,远场发散角小. 关键词： 发光二极管 共振腔 金属有机物化学气相淀积     

激发波长和带宽对Ce/Tb/Eu共掺发光玻璃发光性质的影响

采用双高斯函数拟合不同中心波长和带宽的LED芯片光谱,并根据荧光分光光度计的测量结果推算不同LED芯片激发下的Ce/Tb/Eu共掺发光玻璃的发射光谱和色温。结果表明,当芯片带宽不变,中心波长从370 nm右移到378 nm时,Ce/Tb/Eu共掺发光玻璃色温逐渐下降。当芯片中心波长不变,带宽从10 nm增加到25 nm时,Ce/Tb/Eu共掺发光玻璃的色温变化与中心波长有关。在芯片发光稳定的前提下,带宽变化对Ce/Tb/Eu共掺发光玻璃色温的影响小于中心波长改变的影响,故当Ce/Tb/Eu共掺发光玻璃应用于LED发光时,需优先选择芯片的中心波长。     

AlGaInP基LED阵列平均结温的质心波长表征

在驱动电流为350 mA时,测量了LED阵列在不同衬底温度下的归一化光谱功率分布,然后计算质心波长,并分析其与LED阵列平均结温变化量的关系,最后研究了质心波长表征结温的准确度。研究结果表明:采用1 nm采样间隔的光谱仪,质心波长与平均结温的变化成良好的线性关系,其线性度明显优于中心波长法。同时,质心波长的测量精度更高。因此,质心波长测试是一种可以精确表征AlGaInP基LED阵列平均结温的有效方法。     

基于双色LED芯片的双波长像面数字全息显微术

提出了一种基于双色LED芯片的双波长像面数字全息显微术。将主波长为670nm的红光芯片和主波长为521nm的绿光芯片封装成半球型LED芯片,然后利用彩色CCD相机获取被测样品在两种照明光波下的彩色相移数字全息图,最后采用色彩分离技术、相移技术及双波长相位提取技术获取被测样品的相位分布及面型分布。实验结果证明了本文方法的可行性。     

ZnO作为电子传输层的绿光胶体CdSe量子点LED(QD-LED)的制备与表征

通过调节作为发光层的量子点的尺寸,可以制作出覆盖可见光(380～780 nm)以及近红外光谱的量子点LED(QD-LED),其光谱范围很窄且半高宽可达30 nm。然而量子点LED的寿命、亮度以及效率需要进一步提高才能满足商业化的需求。为了研究QD-LED器件的特性,本文采用523 nm波长的CdSe/ZnS核壳型量子点为发光层、poly-TPD为空穴传输层、ZnO为电子传输层,制备了绿光量子点LED,并表征了器件的特性。     

基于相对光谱差异的非接触式LED结温测量方法

提出一种运用相对光谱的整体差异表征AlGaInP基LED结温的方法.首先使用光谱仪测量不同驱动电流、不同衬底温度下,不同颜色AlGaInP基LED的相对光谱,计算同一LED不同结温条件下相对光谱之间的差异,然后分析相对光谱差异与结温变化量之间的线性度,最后比较相对光谱差异法与峰值波长法测量的准确性.研究表明:相对光谱差异与LED结温变化成正比,相对光谱差异法的准确度和测量误差随光谱仪带宽的增大而增大.当光谱仪带宽为2nm时,其准确度优于采用带宽为1nm的峰值波长法;当带宽为5nm时,其准确度与带宽为1nm的峰值波长法相当.     

光谱分布可调光源的LED筛选研究

针对LED光谱分布可调光源对LED寿命以及光谱一致性的要求,对可见光和近红外波段的29种LED分别进行200 h的电流加速老化试验,并提出LED光谱一致性筛选算法。老化试验结果表明:峰值波长为385 nm、400 nm 和420 1 nm 3种LED的辐射通量平均衰减分别为24.8 %、10.7 %和25.6 %,不能用于LED光谱分布可调光源;剩余的26种LED的辐射通量平均衰减量均低于3.5 %,可作为光谱分布可调光源的内部光源。LED光谱一致性筛选算法以LED光谱数据为基础,计算同类LED间的相对光谱偏差,26种LED的相对光谱偏差均小于4.5 %,保证了所筛选出LED的光谱一致性。     

Optimization towards reduction of efficiency droop in blue GaN/InGaN based light emitting diodes

Light emitting diodes (LEDs) based on GaN/InGaN material suffer from efficiency droop at high current injection levels. We propose multiple quantum well (MQW) GaN/InGaN LEDs by optimizing the barrier thickness and high–low–high indium composition to reduce the efficiency droop. The simulation results reflect a significant improvement in the efficiency droop by using barrier width of 10 nm and high–low–high indium composition in MQW LED.     

High-brightness gallium nitride nanowire UV–blue light emitting diodes

We report on high-brightness GaN nanowire UV–blue light emitting diodes (LEDs), which are fabricated by coupling of n-GaN nanowires and p-GaN substrates using two assembly methods, random dispersion (RD) and dielectrophoresis assisted assembly deposition (DAAD). These GaN nanowire LEDs have bright UV–blue emission (411–437?nm) from the n-GaN nanowire/p-GaN substrate junction and the light emission is strong enough to be observed with the naked eye even for a single GaN nanowire LED. The results reported here should have significant implications for the fabrication of highly efficient, low-cost UV–blue LEDs with low power consumption, as compared to conventional thin-film based GaN LEDs.     

转移基板材质对Si衬底GaN基LED芯片性能的影响

在Si衬底上生长了GaN基LED外延材料,分别转移到新的硅基板和铜基板上,制备了垂直结构蓝光LED芯片。研究了这两种基板GaN基LED芯片的光电性能。在切割成单个芯片之前,对大量尺寸为(300μm×300μm)的这两种芯片分别通高达1 A的大电流在测试台上加速老化1 h。结果显示,铜基板Si衬底GaN基LED芯片有更大的饱和电流,光输出效率更高,工作电压随驱动电流的变化不大,光输出在老化过程中衰减更小。铜基板芯片比硅基板芯片可靠性更高,在大功率半导体照明器件中前景诱人。     

InGaN/GaN多量子阱结构发光二极管发光机理转变的低频电流噪声表征

本文对InGaN/GaN多量子阱结构发光二极管开启后的电流噪声进行了测试, 结合低频电流噪声的特点和载流子之间的复合机理, 研究了低频电流噪声功率谱密度与发光二极管发光转变机理之间的关系. 结论表明, 当电流从0.1 mA到10 mA逐渐增大的过程中, InGaN/GaN发光二极管的电流噪声行为从产生-复合噪声逐渐接近于低频1/f噪声, 载流子的复合机理从非辐射复合过渡为电子与空穴之间载流子数的辐射复合, 并具有标准1/f噪声的趋势, 此时多量子阱中的电子和空穴之间的复合趋向于稳定. 本文的结论提供了一种表征InGaN/GaN多量子阱发光二极管发光机理转变的有效方法, 为进一步研究发光二极管中载流子的复合机理、优化和设计发光二极管、提高其发光量子效率提供理论依据.     

InGaN蓝光与CdTe纳米晶基白光LED

报道了倒装焊InGaN蓝光LED与黄光CdTe纳米晶的复合结构。利用蓝光作为CdTe纳米晶的激发源,通过光的下转换机制,将部分蓝光转化为黄光,复合发射出白光。室温下正向驱动电流为10mA时,发光色品坐标为x=0.29,y=0.30。实验表明,该复合结构白光LED的一大优点在于,复合光的色品坐标几乎不随正向驱动电流大小变化,颜色稳定。     

硅衬底GaN蓝色发光材料转移前后应力变化研究

利用外延片压焊和湿法腐蚀技术将硅衬底上生长的InGaN多量子阱发光二极管(LED)薄膜材料转移到了新衬底上. 研究结果表明, 转移后的LED薄膜中GaN层受到的张应力变小,InGaN层受的压应力变大. 去除转移后LED薄膜中过渡层后,GaN层受到的张应力变大,而铟镓氮层受到的压应力基本不变. 将转移后的薄膜做成垂直结构的LED芯片后,其光电性能明显改善. 关键词： GaN 发光二极管 硅衬底 应力     

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

The high power GaN-based blue light emitting diode (LED) on an 80-μ-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition (MOCVD), hydride vapor-phase epitaxial (HVPE), and laser lift-off (LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), Rutherford back-scattering (RBS), photoluminescence, current-voltage and light output-current measurements. The width of (0002) reflection in XRD rocking curve, which reaches 173" for the thick GaN template LED, is less than that for the conventional one, which reaches 258". The HRTEM images show that the multiple quantum wells (MQWs) in 80-μm-thick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.     

Monolithic white LEDs: Approaches, technology, design

The results of investigations of monolithic white InGaAlN LEDs with an active region containing several thin InGaN layers, emitting in the range from blue to yellow-green, and separated by short-period InGaN/GaN superlattices, are presented. The influence of the growth conditions and layer sequence in the active region on the optical properties of monolithic white LEDs was studied with the aim of controlling their color parameters.     

Inhomogeneity of a highly efficient InGaN based blue LED studied by three‐dimensional atom probe tomography

The InGaN based multiple quantum well (MQW) structure in a commercially available white light emitting diode (LED) was studied by transmission electron microscopy (TEM) and three‐dimensional atom probe tomography (APT). The average In mole fraction by three‐dimensional (3D) APT was found to be about 18% in the InGaN well which is consistent with the secondary ion mass spectrometry (SIMS) analysis. The In distribution in the InGaN well layer was analyzed by the iso curve mapping of 3D APT and found to be non‐uniform in the InGaN active layer. In clustering or In rich regions in the range of 2–3 nm size were found, in contrast to recent reports. Our results thus indicate that In clustering is essential for high‐brightness InGaN based LEDs. We have also observed a discontinuity in the range of 50–100. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs

Improved nonpolar m ‐plane light emitting diodes (LEDs) with a thick InGaN multi‐quantum‐well (MQW) structure have been fabricated on low extended defect bulk m ‐plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence emission from the packaged LEDs was 402 nm, which is in the blue‐violet region. The output power and EQE were 28 mW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)