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1.
Ferroelectric BiFeO3 thin films with Nd-Cr (or Sm-Cr) co-substitution (denoted by BNdFCr and BSmFCr, respectively) were deposited on the Pt(2 0 0)/TiO2/SiO2/Si(1 0 0) substrates by a chemical solution deposition method. X-ray diffraction patterns revealed the formation of BNdFCr and BSmFCr thin films without any secondary phases. The co-substituted BNdFCr (or BSmFCr) thin films, which were annealed at 550 °C for 30 min in N2 atmosphere, exhibited enhanced electrical properties compared to BFO thin films with the remanent polarization (2Pr) and coercive electric field (2Ec) of 196, 188 μC/cm2 and 600, 570 kV/cm with the electric field of 800 kV/cm, respectively. The leakage current densities of BNdFCr and BSmFCr thin films measured at room temperature were approximately three orders of magnitude lower than that of BFO thin film, and the leakage current at room temperature of the thin films exhibited three distinctive conduction behaviors. Furthermore, the values of pulse polarizations [i.e., +(P*-P^) or −(P*-P^)] of BNdFCr and BSmFCr thin films were reasonably unchanged up to 1.4 × 1010 switching cycles.  相似文献   

2.
Ferroelectric BiFeO3 thin films and artificial superlattices of (BiFeO3)m(SrTiO3)m (m∼1-10 unit cells) were fabricated on (0 0 1)-oriented SrTiO3 substrates by pulsed laser ablation. The variation of leakage current and macroscopic polarization with periodicity was studied. Piezo force microscopy studies revealed the presence of large ferroelectric domains in the case of BiFeO3 thin films while a size reduction in ferroelectric domains was observed in the case of superlattice structures. The results show that the modification of ferroelectric domains through superlattice could provide an additional control on engineering the domain wall mediated functional properties.  相似文献   

3.
BiFe1−xNixO3 ceramic powders with x up to 0.10 have been prepared by the sol-gel technique. The band gap of BiFeO3 is 2.23 eV, and decreases to 2.09 eV for BiFe0.95Ni0.05O3 and BiFe0.90Ni0.10O3. The Mössbauer spectra show sextet at room temperature, indicating the magnetic ordering and the presence of only Fe3+ ions. Superparamagnetism with blocking temperature of 31 K for BiFe0.95Ni0.05O3 and 100 K for BiFe0.90Ni0.10O3 was observed. Enhanced magnetization at room temperature have been observed (1.0 emu/g for BiFe0.95Ni0.05O3 and 2.9 emu/g for BiFe0.90Ni0.10O3 under magnetic field of 10,000 Oe), which is one order larger than that of BiFeO3 (0.1 emu/g under magnetic field of 10,000 Oe). The enhanced magnetization was attributed to the suppression of the cycloidal spin structure by Ni3+ substitution and the ferrimagnetic interaction between Fe3+ and Ni3+ ions.  相似文献   

4.
5.
Self-oriented BiFeO3 (BFO) thin films are prepared via chemical solution deposition method with magnetic field in-situ annealing process. The effects of magnetic annealing on the microstructure, magnetic and dielectric properties as well as magnetoelectric coupling effect of the BFO thin films are investigated. With increasing the annealing magnetic field, the crystallization quality, texture, grain boundary connectivity and densification of the films are enhanced, which is attributed to the improvement of connection and diffusion of components. The magnetization of the field-annealing films and dielectric constant as well as remanent polarization increases with increasing the strength of annealing magnetic field. In addition, it is observed that magnetocapacitance value of the magnetic-field-annealing BFO thin film is higher than the non-field-annealing one. Moreover the BFO thin films annealed at 3 kOe magnetic field show the magnetoelectric effect with 4% under 2 kOe at room temperature.  相似文献   

6.
BiFeO3 (BFO) ceramics of different grain size have been synthesized by spark plasma sintering of sol-gel derived nanoparticles. It was found that with decreasing grain size there occurs an enhancement in magnetization and a simultaneous suppression in current leakage. According to systematic materials characterization, the enhanced magnetization is attributed to the enriched grain boundaries where the missing structural order perturbs the spin helix structure of BFO and thus generates uncompensated spins, while the reduced current leakage is ascribed to fewer conduction paths provided by the compacted grain structure.  相似文献   

7.
Ferroelectric and fatigue behavior of bilayered thin films consisting of Mn4+-modified BiFeO3 and Zn2+-modified BiFeO3, which were deposited on SrRuO3-buffered Pt coated silicon substrates, were systematically investigated. The (1 1 1) orientation is induced for the BiFe0.95Mn0.05O3/BiFe0.95Zn0.05O3 bilayer, due to the introduction of the bottom BiFe0.95Zn0.05O3 layer. With increasing the thickness ratio of the BiFe0.95Mn0.05O3 layer, their leakage current decreases, and the fatigue endurance is greatly improved owing to the introduction of the BiFe0.95Mn0.05O3 layer with a lower fatigue rate. The BiFe0.95Mn0.05O3/BiFe0.95Zn0.05O3 bilayer with the thickness ratio of 3:1 exhibits a larger remanent polarization of 2Pr ∼ 161.0 μC/cm2 than those of bilayers with different thickness ratios, while their coercive field slightly increases with increasing the thickness ratio of the BiFe0.95Mn0.05O3 layer.  相似文献   

8.
The Nd-doped BiFeO3 thin films were prepared on SnO2(FTO) substrates spin-coated by the sol–gel method using Nd(NO3)3·6H2O, Fe(NO3)3·9H2O and Bi(NO3)3·5H2O as raw materials. The microstructure and electric properties of the BiFeO3 thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO3 films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi0.85Nd0.15FeO3 films gives rise to the largest Pr of 64 μC/cm2. The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi0.85Nd0.15FeO3 thin film at 10 kHz are 190 and 0.017 respectively.  相似文献   

9.
BiFeO3/Zn1−xMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2Pr ∼ 121.0-130.6 μC/cm2 was measured for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO (x = 0.04) bilayer exhibits a highest Ms value of 15.2 emu/cm3, owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced Ms value.  相似文献   

10.
Raman scattering from one-magnon excitation has been observed for the first time in epitaxial BiFeO3 thin films grown on (1 1 1) SrTiO3 substrates. The intensities and the frequency of the magnon mode at 18.9 cm−1 (M1) showed a discrepancy at the characteristic temperatures of ∼140 and 200 K and the magnon mode at 27.9 cm−1 (M2) disappeared at ∼200 K suggesting spin-reorientation (SR) transition in the epitaxial BFO film. The dc susceptibility measurement showed a large discrepancy near these two temperatures evidently elucidating the spin-reorientation transition mechanism. The partial spectral weight of the magnon modes is believed to be transferred to the lowest phonon mode appearing at 72.8 cm−1 and higher magnon mode M2 disappearing near 200 K reveal magnon-phonon coupling near to SR transition.  相似文献   

11.
The phase transition of BiFeO3 (BFO) from tetragonal to monoclinic induced by pressure was investigated by first-principles method. The sequential monoclinic phase, MaMa, which is favorable during low compression with respect to the tetragonal phase, was characterized. The order parameters were calculated in the vicinity of the phase transition, showing that phase transition has a second-order character. The results demonstrated that the pressure-induced tetragonal-to-monoclinic phase transition in BFO is related to the softening behavior of the E mode, which are very helpful in further investigations of the morphotropic phase boundary (MPB) in lead-free materials.  相似文献   

12.
娄艳辉  宋桂林  常方高  王照奎 《中国物理 B》2010,19(7):77702-077702
The influence of oxygen content on the dielectric property of BiFeO3 ceramics is studied by experiment and firstprinciples calculation.The experimental result demonstrates that the dielectric constant of BiFeO3 is strongly dependent on introduced oxygen and oxygen vacancies.By comparison with BiFeO3,the introduced oxygen and oxygen vacancies can lead to a reduction in dielectric constant of BiFeO δ at a lower frequency.The first-principles calculation also shows a similar result when photon energy is in a range of 2.0-4.1 eV.A likely explanation is that this oxygen content dependence may be ascribed to the distortion of Fe-O octahedron structure due to oxygen vacancies or excess oxygen ions in the crystal structure of BiFeO3.  相似文献   

13.
采用改进的溶胶-凝胶方法在LaNiO3/Si(100)衬底上制备了MgO/(Ba0.8Sr0.2)TiO3多层薄膜.实验结果表明,MgO层的引入改变了(Ba0.8Sr0.2)TiO3的介电特性和漏电流行为,使薄膜的漏电 流降低了3个数量级,但介电常数也有相应降低.漏电流的显著降低是由MgO子层的高阻特性 以及微量Mg向(Ba0.8关键词: 0.8Sr0.2)TiO3多层薄膜')" href="#">MgO/(Ba0.8Sr0.2)TiO3多层薄膜 漏电流 介电常 数  相似文献   

14.
0.7BiFeO3-0.3PbTiO3 (BFPT7030) thin films were deposited on SiO2/Si substrates by sol-gel process. The influence of heating rate on the crystalline properties of BFPT7030 thin films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). XRD patterns of the films showed that a pure perovskite phase exists in BFPT7030 films annealed by rapid thermal annealing (RTA) technique. SEM and AFM observations demonstrated that the BFPT7030 films annealed by RTA at 700 °C for 90 s with the heating rate of 1 °C s−1 could show a dense, crack-free surface morphology, and the films’ grains grow better than those of the films annealed by RTA at the same temperature with other heating rates. XPS results of the films indicated that the ratio of Fe3+:Fe2+ is about 21:10 and 9:5 for the films annealed by RTA at 700 °C for 90 s with the heating rate of 1 and 20 °C s−1, respectively. That means the higher the heating rate, the higher the concentration of Fe2+ in the BFPT7030 thin films.  相似文献   

15.
The effect of magnetic annealing treatment on the magnetization of multiferroic BiFeO3 was studied systematically. A series of pelletized nano-sized BiFeO3 powders were annealed at high temperature under different magnetic fields. Typical ferromagnetic hysteresis loops were obtained at room temperature of the ceramics which were derived from ferromagnetic BiFeO3 precursors. On the other hand, antiferromagnetic behaviors were observed in other samples synthesized from nonmagnetic precursors. The enhanced magnetic properties were ascribed to the magnetic anisotropy which was induced by the strong magnetic fields. This work indicates that the strong magnetic annealing method is an alternative approach to tuning the magnetic properties of high performance multiferroic materials with canted antiferromagnetic ordering.  相似文献   

16.
BiFeO3-CoFe2O4 epitaxial nanocomposites have been deposited on SrTiO3 (0 0 1) substrates by pulsed laser deposition. We present here a study of the influence of the deposition temperature (TS), in the 550-800 °C range, on the film composition, morphology and microstructure. Electron-probe microanalysis shows strong reduction of the Bi content in the films when increasing TS. Films prepared at TS=750 °C and above are virtually Bi-free. X-ray diffraction (XRD) data show that, due to the volatility of Bi, there is a progressive reduction in the amount of BiFeO3. The deposition temperature and the concomitant presence of FexOy spurious phases in the nanocomposites grown at high temperature promote radical changes in film morphology and magnetization. It thus follows that a temperature range suitable for controlled modification of nanocomposites morphology would be extremely narrow.  相似文献   

17.
The electronic structure of thin films NdNiO3/NdGaO3 with various thicknesses (from 17 nm to 150 nm), have been studied by photoemission spectroscopy at 300 K and 169 K. The XPS results are consistent with the literature ab initio calculations of the NdNiO3 electronic structure. A noticeable variation attributed to the metal-insulator (MI) transition has been found only for the films with relatively high thickness (150 nm). Furthermore, the photoemission spectra and their temperature dependence have been discussed with regard to the results of dc electrical resistivity measurements which also exhibit large thickness dependence. Finally, these new results support a possible large hetero-epitaxial effect on the thinnest sample (17 nm) which could stress the NdNiO3 structure and consequently makes its electronic structure nearly stabilized.  相似文献   

18.
魏杰  陈彦均  徐卓 《物理学报》2012,61(5):57502-057502
采用乙二胺四乙酸杂化溶胶法制备了不同晶粒尺寸的纯相BiFeO3纳米颗粒,并利用X射线衍射仪、扫描电镜、超导量子干涉仪和Mossbauer 谱系统研究了其结构、形貌以及磁性能.结果表明: BiFeO3纳米颗粒具有明显的弱铁磁性,并呈现强烈的尺寸依赖特性; 这种弱铁磁性主要源于纳米材料的尺寸限制效应,而非杂质相或Fe2+ 的存在所致.  相似文献   

19.
佘彦超  张蔚曦  王应  罗开武  江小蔚 《物理学报》2018,67(18):187701-187701
基于非平衡格林函数及密度泛函理论第一性原理计算方法,计算了Fe, Al, V和Cu四种阳离子掺杂对氧空位缺陷引起的PbTiO_3铁电薄膜漏电流的调控.研究表明:Fe和Al离子掺杂将会增大由其中氧空位缺陷导致的铁电薄膜的漏电流,而Cu和V离子掺杂对该漏电流的大小具有明显抑制作用.这是因为Cu和V掺杂对氧空位缺陷有明显的钉扎作用.相比于半径更大的Cu离子,由于V的离子半径更小,且更接近于PbTiO_3铁电薄膜中Ti的离子半径,可以预言V离子更可能被掺杂进入薄膜,从而抑制氧空位缺陷引起的漏电流.研究结果对铁电薄膜器件的电学性能控制和优化有一定的理论指导意义.  相似文献   

20.
李强  黄多辉  曹启龙  王藩侯 《中国物理 B》2013,22(3):37101-037101
The first-principles projector-augmented wave method employing the quasi-harmonic Debye model,is applied to investigate the thermodynamic properties and the phase transition between the trigonal R3c structure and the orthorhombic Pnma structure.It is found that at ambient temperature,the phase transition from the trigonal R3c phase to the orthorhombic Pnma phase is a first-order antiferromagnetic-nonmagnetic and insulator-metal transition,and occurs at 10.56 GPa,which is in good agreement with experimental data.With increasing temperature,the transition pressure decreases almost linearly.Moreover,the thermodynamic properties including Grneisen parameter,heat capacity,entropy,and the dependences of thermal expansion coefficient on temperature and pressure are also obtained.  相似文献   

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