Infrared absorption spectra for B- and P-alloyeda-Si: Effects of annealing

The effects of isochronal annealing on the infrared and far-infrared spectra of very heavily B- and P-dopeda-Si(H) are reported. Upon annealing, the B-H stretching mode evolves into two bands centered at 2475 and 2370cm^–1. The broad band of the heavily B-doped samples between 600 and 900cm_-1 is resolved into three peaks or absorption shoulders located at 830, 725, and 630cm_-1. The 640cm_-1 band of the heavily P-doped samples splits into two peaks centered at 630 and 670cm_-1. The assignment of the above peaks is discussed. The intrinsic infrared absorption due to the Si lattice modes changes only little as a result of the annealing. These changes are a measure of the H-induced ir activity of the Si-Si bands.     

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

Using infrared (IR) spectroscopy and spectral ellipsometry, we experimentally confirmed the previously predicted mechanochemical effect of the stoichiometric composition disorder leading to the formation of carbon-vacancy structures in silicon carbide (SiC) films grown on silicon substrates by the atom substitution method. It was found that a band at 960 cm^–1 in the IR spectra of SiC films on silicon, corresponding to “carbon-vacancy clusters” is always present in SiC films grown under pure carbon monoxide (CO) or in a mixture of CO with silane (SiH₄) on Si substrates of different orientation and doping level and type. There is no absorption band in the region of 960 cm–1 in the IR spectra of SiC films synthesized at the optimum ratio of the CO and trichlorosilane (SiHCl₃) gas pressures. The previously predicted mechanism of the chemical reaction of substitution of Si atoms for carbon by the interaction of gases CO and SiHCl₃ on the surface of the silicon substrate, which leads to the formation of epitaxial layers of single-crystal SiC, is experimentally confirmed.     

First-principles study on Sb-doped SnS2 as a low cost and non-toxic absorber for intermediate band solar cell

Tin disulfide has attracted much attention on solar cell study due to its excellent optoelectronic properties in addition to just containing low-cost and non-toxic elements. Based on the HSE06-hybrid function calculations combined with Grimme's dispersion-correction method, a half-filled and delocalized intermediate band(IB) is presented in the main band gap of SnS₂ after partially Sb substituting on Sn site, which is made of the antibonding states of Sb-s and S-p states. Three-photon absorption can be realized in the doped sample and its corresponding absorption coefficient is enhanced at the visible light region thanks to the isolated and half-filled IB above the original valence band. Furthermore, Sb_Sn always has the lowest formation energy than other Sb-related defects (i.e. Sb_S and Sb_i) based on the defect formation energy calculations. Therefore, Sb-doped SnS₂ is suggested as a promising candidate for the absorber of intermediate band solar cell.     

Light Trapping and Down‐Shifting Effect of Periodically Nanopatterned Si‐Quantum‐Dot‐Based Structures for Enhanced Photovoltaic Properties

Periodically nanopatterned Si structures have been prepared by using a nanosphere lithography technique. The formed nanopatterned structures exhibit good anti‐reflection and enhanced optical absorption characteristics. The mean surface reflectance weighted by AM1.5 solar spectrum (300–1200 nm) is as low as 5%. By depositing Si quantum dot/SiO₂ multilayers (MLs) on the nanopatterned Si substrate, the optical absorption is higher than 90%, which is significantly improved compared with the same multilayers deposited on flat Si substrate. Furthermore, the prototype n‐Si/Si quantum dot/SiO₂ MLs/p‐Si heterojunction solar cells has been fabricated, and it is found that the external quantum efficiency is obviously enhanced for nanopatterned cell in a wide spectral range compared with the flat cell. The corresponding short‐circuit current density is increased from 25.5 mA cm^?2 for flat cell to 29.0 mA cm^?2 for nano‐patterned one. The improvement of cell performance can be attributed both to the reduced light loss and the down‐shifting effect of Si quantum dots/SiO₂ MLs by forming periodically nanopatterned structures.     

Optical properties in binary Si: H alloy from disilane

Binary Si: H alloy films having a wide optical band gap have been prepared by r.f. glow discharge of disilane. The optical band gap and the infrared absorption spectrum have been measured for those binary alloy films. The infrared absorption strength for 850 cm^-1 peak and the vibrational freqcencies for all absorption peaks are increased with an increase in the optical band gap. This sugests the (SiH₂)_n group formation in a wide optical gap film.     

The influence of a salivary coating on the molecular surface composition of oral streptococci as determined by Fourier transform infrared spectroscopy

In order to determine the influence of saliva treatment on the molecular surface composition of oral streptococci, infrared transmission spectroscopy on freeze-dried cells mixed in KBr was used. All IR spectra show similar absorption bands for the saliva-coated and uncoated strains involved, with the most important absorption bands located at 2930cm⁻¹ (CH), 1653 cm⁻¹ (AmI), 1541 cm⁻¹ (AmII) and two bands at 1236 cm⁻¹ and 1082cm⁻¹, which were assigned to phosphate and sugar groups. However, calculation of absorption band ratios normalized with respect to the CH band around 2930cm⁻¹, showed major differences between the saliva-coated and uncoated strains. All strains demonstrated an increase in the AmI/CH and AmII/CH absorption band ratios after saliva treatment indicative for protein adsorption, except for Streptococcus mitis BA showing a small decrease in the AmI/CH absorption band ratio. Two positive relationships could furthermore be established both between the AmII/CH absorption band ratio with the N/C elemental surface concentration ratio of the strains, previously determined from X-ray Photoelectron Spectroscopy (XPS) as well as between AmI/CH with the fraction of carbon atoms at the surface involved in amide bonds, also determined by XPS. This study clearly demonstrates the possibility of IR spectroscopy to determine the molecular surface properties of freeze-dried micro-organisms, as illustrated here from a comparison between the molecular composition of untreated and saliva-treated oral streptococcal strains.     

Effect of rapid thermal oxidation on structure and photoelectronic properties of silicon oxide in monocrystalline silicon solar cells

This paper concerns the topic of surface passivation properties of rapid thermal oxidation on p-type monocrystalline silicon wafer for use in screen-printed silicon solar cells. It shows that inline thermal oxidation is a very promising alternative to the use of conventional batch type quartz tube furnaces for the surface passivation of industrial phosphorus-diffused emitters. Five minutes was the most favorable holding time for the rapid thermal oxidation growth of the solar cell sample, in which the average carrier lifetime was increased 19.4 μs. The Fourier transform infrared spectrum of the rapid thermal oxidation sample, whose structure was Al/Al-BSF/p-type Si/n-type SiP/SiO₂/SiN_x/Ag solar cell with an active area of 15.6 cm², contained an absorption peak at 1085 cm⁻¹, which was associated with the Si–O bonds in silicon oxide. The lowest average reflectance of this sample is 0.87%. Furthermore, for this sample, its average of internal quantum efficiency and conversion efficiency are respectively increased by 8% and 0.23%, compared with the sample without rapid thermal oxidation processing.     

负偏压热灯丝CVD金刚石膜核化和早期生长的研究

利用扫描电子显微镜、Raman谱和X射线光电子能谱，研究了Si衬底上热灯丝CVD金刚石膜的核化和早期生长.在-300V和100mA条件下预处理15min，镜面抛光的Si(100)表面上金刚石核密度超过了10⁹cm^-2，但是核的分布极不均匀且可分为三个区域：A区，边缘处以锥体为主；B区，位于边和中心之间过渡区是纳米金刚石；C区，中心处有SiC层.无偏压下生长4h后，A区形成许多大而弧立的金刚石颗粒，B区成为织构金刚石膜，而C区变为含有大量缺陷的连续金刚石膜.衬底负 关键词：     

Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Numerical study of InGaN tandem solar cells with intermediate bands

Theoretical investigations of InGaN tandem solar cells with intermediate bands (IBs) have been conducted through calculating the diode equation taking into account the radiative and nonradiative recombination currents. The calculated maximum ef?ciencies of the double‐junction cell with one IB in each subcell are 57.85% and 68.37% under AM1.5G one‐sun and 46000‐sun illuminations, respectively. It has also been observed that the combined device with the top‐cell bandgaps of 2.9–3.4 eV (2.6–3.4 eV for full concentration) may have an opportunity to realize the application of over 50% efficiency. We suggest that the optimized width of the IB layer be designed in the range of 1–6 μm if its absorption coefficient is 10⁴–10⁵ cm^–1 in the IB region.     

离子注入形成SOI结构的界面及埋层的俄歇能谱研究

本文中研究了O⁺(200keV,1.8×10¹⁸/cm²)和N⁺(190keV,1.8×10¹⁸/cm²)注入Si形成SOI(Silicon on Insulator)结构的界面及埋层的化学组成。俄歇能谱的测量和研究结果表明:注O⁺的SOI结构在经1300℃,5h退火后,其表层Si和氧化硅埋层的界面存在一个不饱和氧化硅状态,氧化硅埋层是由SiO₂相和这不饱和氧化硅态组成,而且氧化硅埋层和体硅界面不同于表层Si和氧化硅埋层界面;注N⁺的SOI结构在经1200℃,2h退火后,其氮化硅埋层中存在一个富N的疏松夹层,表层Si和氮化硅埋层界面与氮化硅埋层和体硅界面性质亦不同。这些结果与红外吸收和透射电子显微镜及离子背散射谱的分析结果相一致。还对两种SOI结构界面与埋层的不同特征的原因进行了分析讨论。 关键词：     

Far infrared absorption of a-GeSe

Far infrared absorption measurements have been made on a series of a-Ge_xSe_1?x films with near equiatomic compositions. The only sharp feature is an absorption line at 260cm^-1, and the compositional dependance of this feature is correctly described by a model in which the Ge(Se) atoms are 4(2) fold co-ordinated. There is no evidence in our amorphous samples of any absorption band in the frequency range (160?190cm^?1) of the major IR active modes of 3:3 fold co-ordinated crystalline GeSe.     

Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal-organic chemical vapor deposition

Heterojunction light-emitting diodes with ZnO/Si structure were fabricated on both high-resistivity (p) and low-resistivity (p⁺) Si substrates by metal-organic chemical vapor deposition technology. Fairly good rectifications were observed from the current-voltage curves of both heterojunctions. Ultraviolet (UV) and blue-white electroluminescence (EL) from ZnO layer were observed only from ZnO/p⁺-Si heterojunction under forward bias at room temperature (RT), while strong infrared (IR) EL emissions from Si substrates were detected from both ZnO/p-Si and ZnO/p⁺-Si heterojunctions. The UV and IR EL mechanisms have been explained by energy band structures. The realization of RT EL in UV-visible and IR region on Si substrate has great applicable potential for Si-based optoelectronic integrated circuits.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

OH-吸收带作为铌酸锂晶体缺陷结构的探针

本文报道了一组不同Li/Nb比和另一组不同掺Mg浓度的LiNbO₃晶体室温OH^-吸收带的实验结果,观察到OH^-吸收带的三峰结构及其随Li/Nb比的变化,以及重掺Mg晶体中(6mol％MgO)OH^-吸收带转变为双峰结构,并向高能端移动54cm^-1。根据LiNbO₃的晶体结构以及Abrahams和Smyth的缺陷结构模型,对化学计量晶体、一致熔化晶体和掺Mg晶体分别进行讨论。并提出重掺Mg晶体中OH^-吸收带向高能端的移动可能是由于当掺Mg浓度超过阈值后Mg²⁺离子开始进入Nb位而引起的。 关键词：     

Intersubband absorption in modulation doped p-type Si1-xGex quantum wells: theory and experiment

A study of intersubband infrared absorption in modulation doped p-type Si/SiGe quantum wells is presented for SiGe wells with thicknesses between 22 Å and 64 Å and Ge contents in the range from 23% to 58%. The peak positions of the absorption lines are observed between 500 cm^-1 and 2200 cm^-1. Depending on the barrier height (i.e., on the Ge content of the wells), the heavy-hole states excited by the infrared radiation are either localized in the wells or strongly mixed with barrier-bound states and therefore delocalized. The shape of the absorption line correspondingly changes from a narrow Lorentz line to a rather broad absorption band. Using the structural parameters determined by high-resolution triple-axis x-ray diffraction, the results of a self-consistent Luttinger-Kohn type envelope function approach with the explicit inclusion of the strain in the quantum wells are in excellent agreement with the measured spectra.     

Size effect of nanostructured formations on scattering of optical phonons in poly(ethylene terephthalate)

The temperature dependence of the half-width of the infrared (IR) absorption band at a frequency of 971.5 cm^?1 in the spectra of poly(ethylene terephthalate) (PET) is investigated for crystallized and amorphous PET samples in which the lengths of trans sequences are approximately equal to 4–7 and 2–3 nm, respectively. The observed increase in the half-width with increasing temperature is explained by inelastic scattering of phonons of stretching vibrations of the macromolecular skeleton by other phonons. The half-width of the band at 971.5 cm^?1 in the IR spectra of the amorphous polymer is approximately 1.5 times larger than that in the spectra of the crystallized polymer. This is associated with the violation of the wave-vector selection rules due to a small length of the trans sequences in the amorphous sample.     

Implantation as a tool for performing selective materials (application to solar energy conversion)

A selective solar material must absorb most of the solar spectrum, principally the visible light, and reflect the IR light.

Insulators are generally transparent in a wide part of the optical spectrum and the defects are revealed in these crystals by strong absorption bands. On the other hand, metals absorb much of the IR and near IR light and have a large reflection coefficient in the same region of the spectrum. In previous papers^1,2 it has been shown that metallic colloids, formed by precipitation of impurities in insulators, are responsible for a strong absorption band. Such metallic inclusions may be easily produced in most insulators by implantation. According to the nature of the implanted metal a selective absorption can be obtained. So a composite material (cermet) may be performed combining a colloidal absorption in the visible and a metallic reflection. We will discuss the different ways to achieve these properties using direct ion beam implantation.

Various cermets (LiF: Na, Au; MgO: Na, Au) have been studied as function of energy (0.1-1 MeV) and dose (10¹⁶-10¹⁷ ions/cm²). Colloids are completely developed by consecutive annealing.⁴

The modelization of these cermets requires a careful characterization by optical methods (spectrophotometry) and microscopic investigation (TEM, SEM, RBS, SIMS).⁷ These techniques are used to determine the filling factor and the concentration profile of metal in the insulating matrix.

With the help of the Maxwell-Garnett theory and using a single or multilayer model it is possible to suggest an interpretation of the optical properties.     

Ion beam deposition of a-Si:H

The ion beam deposition (IBD) of hydrogenated amorphous silicon is described. Hydrogen incorporation and bonding with the silicon network is evident from SIMS and infrared spectra; the latter show absorption bands centered at 2000cm^?1 and 630cm^?1 typical of monosilicon hydride bonding. IBD a-Si:H thin films are found to be free of microvoids and trace metallic impurities. Four probe conductivity measurements show that the ion beam deposition process yields high resistivity, hydrogenated amorphous silicon (?≥10⁹Ωcm). All of these measurements suggest a low density of defects states in the band gap.     

Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing

Infrared optical properties of extremely heavily doped n-type Si, obtained by ion implantation and laser annealing, were studied. A new relation between free carrier effective mass (m¹) and carrier concentration (10¹⁹ ?5 × 10²¹cm^-3) was obtained. The value of m¹ increases significantly with the increase of carrier concentration, when carrier concentration exceeds 10²¹cm^-3. The result is discussed in relation to the occupation of electrons in a new valley of the conduction band.