Effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I--V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550~nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I--V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.     

钇掺杂钨酸铅晶体中的极化子和导纳谱

在室温至160 ℃范围内测量了掺钇钨酸铅(PWO∶Y)晶体的直流电导率,证明此时的载流子为极化子.观察到极化子由能带导电到跳跃导电转变引起的电导率极小.在此温区的交流导纳分析给出的交流电导率比直流电导率大三个数量级,说明此时的交流电导率主要是复介电常数的贡献.当样品的电导率和介电常数均随频率而变化时,从交流测量只能得到样品的总的导纳谱，而不能将其中的电导谱和介电谱分开. 关键词： 钨酸铅 电导谱 介电谱 导纳谱 极化子     

The effect of annealing on structural,optical and electrical properties of ZnS/porous silicon composites

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I–V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diflraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature,the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.     

Effect of high magnetic field annealing on the microstructure and magnetic properties of Co-Fe layered double hydroxide

The effects of high magnetic field (10 T) on the products obtained by calcination of Co-Fe LDH precursors at different temperatures were investigated. The XRD results indicated that Fe^III substituted for Co^III in Co₃O₄ to yield Co^IICo^IIIFe^IIIO₄ under the calcination of Co-Fe LDH precursors at 400 °C. The products obtained by magnetic field annealing at 400 °C had a porous plate-like morphology, whereas the products without magnetic field annealing were composed of nanoparticles. It was seen that CoFe₂O₄ phase could be formed at low temperature (about 500 °C) under the magnetic field annealing. The grain size of products obtained by magnetic field annealing at 800 °C was larger than that of zero magnetic field. It was found that the saturation magnetization was significantly enhanced after magnetic field annealing, especially at lower temperature (≤600 °C). The possible reason for the effects on the microstructure and magnetic properties of products obtained by magnetic field annealing was discussed.     

氮氢混合气氛退火中氢对Bi4Ti3O12铁电性能的影响

采用基于密度泛函理论的第一性原理研究了在氮氢混合气氛中退火后Bi₄Ti₃O₁₂铁电性的退化机理. 分别计算了无氢、含氢模型中Ti沿c轴位移时体系总能量的变化,电子云密度分布,以及电子结构的总能态密度的变化. 结果表明含氢Bi₄Ti₃O₁₂铁电相Ti-O,Bi-O间的电子云重叠布居分布较无氢情况下变化明显,氢氧之间较强的轨道杂化使它们趋于形成共价键;晶格中氢氧键的 关键词： 氮氢混合气氛退火 铁电性 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 第一性原理     

Effect of temperature of annealing on optical, structural and electrochromic properties of sol-gel dip coated molybdenum oxide films

The sol-gel dip-coating method is used for the preparation of MoO₃ thin films. The 6 layered MoO₃ films were prepared and annealed at various temperatures in the range of 200-350 °C. The band gap value for MoO₃ films were calculated from optical absorption measurements and it is in the range of 3.55-3.73 eV. XRD spectrum reveals (0 2 0) is the major diffraction plane for the films prepared above 250 °C, which reveals the formation of MoO₃ in α-orthorhombic phase. The films prepared at 200 °C and 250 °C exhibits amorphous nature. The FTIR spectrum confirms the presence of Mo-O-Mo and MoO bonds. Nanorods were observed in the SEM images in the case of MoO₃ films prepared above 250 °C. The films prepared at 250 °C exhibit maximum anodic diffusion coefficient of 9.61 × 10⁻¹¹ cm²/s. The same film exhibits the change in optical transmission of 58.4% at 630 nm with the optical density of 0.80.     

钨酸铅晶体中的偶极缺陷

在用阻抗谱研究PbWO₄（PWO）晶体的介电特性时发现，掺La³⁺的PW O晶体中存在典型的介电弛豫现象，它被归因于La³⁺进入Pb位并与铅空位V_Pb缔合 成偶极缺陷.这一结果不仅清楚地证明了PWO晶体中铅空位的存在，而且表明阻抗谱测试可以成为PWO晶体微结构研究的有力工具.以阻抗谱测试为主要工具，结合光吸收谱（包括红外谱）和x射线光电子能谱，阐明了在异价掺杂离子（3+，4+，5+以及3+和5+双掺）掺杂的PWO晶体中 关键词： 钨酸铅 偶极缺陷 异价掺杂 退火效应     

退火温度对低温生长MgxZn1－xO薄膜光学性质的影响

用射频磁控溅射法在80℃衬底温度下制备出Mg_xZn_1-xO(x=0.16)薄膜，用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对Mg_xZn_1-xO薄膜结构和光学性质的影响.测量结果显示，Mg_xZn_1-xO薄膜为单相六角纤锌矿结构，并且具有沿c轴的择优取向；随着退火温度的升高，(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大，(002)XRD峰半高宽(F 关键词： xZn_1-xO薄膜')" href="#">Mg_xZn_1-xO薄膜 射频磁控溅射 退火     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

Preparation and tribological properties of stearic acid-modified hierarchical anatase TiO2 microcrystals

Hierarchical TiO₂ microcrystals were synthesized through a facile solvothermal method. X-ray diffraction (XRD) and scanning electron microscope (SEM) measurements were used to characterize the structure of the as-prepared samples. The results indicated that the synthesized hierarchical titania (TiO₂) microspheres were composed of numerous anatase phase TiO₂ particles. The as-prepared samples were chemically modified with stearic acid to improve their dispersion in oil. Fourier transmission infrared spectroscopy (FT-IR) and thermogravimetry analysis (TGA) were carried out to evaluate the characteristics of the modified TiO₂ microcrystals. The tribological properties of the modified TiO₂ microcrystals as additives of liquid paraffin were studied by a four-ball tester, and the results showed that they could significantly improve anti-wear performance, friction-reduction property and load-carrying capacity of liquid paraffin. These advantages make the modified TiO₂ microcrystals promising for green lubricating oil additives.     

钨酸铅晶体中与铅空位有关的电子结构和色心模型研究

根据密度泛函理论对钨酸铅晶体中铅空位周围的晶格进行了结构优化，计算得到铅空位周围的晶格结构、电子态密度分布和偏振吸收光谱；计算结果表明钨酸铅晶体中铅空位的两价负电性是通过铅空位周围的氧共同抓获两个空穴来维持局部电中性的，即铅空位周围形成的色心模型为［O₂^3--V_Pb^2--O₂^3-］，不同的氧离子抓获空穴方式不同形成不同的色心，对应不同的吸收带；根据吸收带的偏振性质，提出了各个 关键词： 钨酸铅晶体 色心模型 电子结构 偏振特性     

Effect of post-thermal annealing on the structural and optical properties of ZnO thin films prepared from a polymer precursor

ZnO thin films were synthesised by a new method which uses polyvinyl alcohol (PVA) as the polymer precursor. The films are annealed at different temperatures and for different annealing times. The structural parameters, like grain size, lattice constants, optical band gap, and Urbach energy, depend on the annealing temperature and time. All the films possess tensile strain, which relaxes as the annealing temperature and time increase. The photoluminescence (PL) spectra contain only ultraviolet (UV) peaks at low temperature, but as the annealing temperature and time increase, we observe peaks at the blue and green regions with a variation in the intensities of these peaks with annealing temperature and time.     

Effect of post-thermal and optical properties annealing on the structural of ZnO thin films prepared from a polymer precursor

ZnO thin films were synthesised by a new method which uses polyvinyl alcohol （PVA） as the polymer precursor. The films are annealed at different temperatures and for different annealing times. The structural parameters, like grain size, lattice constants, optical band gap, and Urbach energy, depend on the annealing temperature and time. All the films possess tensile strain, which relaxes as the annealing temperature and time increase. The photoluminescence （PL） spectra contain only ultraviolet （UV） peaks at low temperature, but as the annealing temperature and time increase, we observe peaks at the blue and green regions with a variation in the intensities of these peaks with annealing temperature and time.     

Effect of post thermal annealing on the structural and optical properties of ZnO thin films prepared from polymer precursor

ZnO thin films were synthesised by a new method which uses polyvinyl alcohol (PVA) as polymer precursor. The films are annealed at different temperatures and for different annealing times. The structural parameters, like grain size, lattice constants, optical band gap, and Urbach energy, depend on the annealing temperature and annealing time. All the films possess tensile strain which relaxes as the annealing temperature and the annealing time increases. The photoluminescence (PL) spectra contain only ultraviolet (UV) peaks at low temperature, but as the annealing temperature and time increase we observe peaks at blue and green regions with variation of the intensities of these peaks with annealing temperature and annealing time.     

Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

In this article, the authors developed a high-k HoTiO₃ gate dielectric deposited on Si (1 0 0) through reactive cosputtering. They found that the HoTiO₃ dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect (related to oxygen vacancy) due to a rather well-crystallized HoTiO₃ structure and composition observed by X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, respectively.     

退火对非故意掺杂4H-SiC外延材料386 nm和388 nm发射峰的影响

10 K条件下,采用光致发光(PL)技术研究了不同退火处理后非故意掺杂4H-SiC外延材料的低温PL特性.结果发现,在370—400 nm范围内出现了三个发射峰,能量较高的峰约为3.26 eV,与4H-SiC材料的室温禁带宽度相当.波长约为386 nm和388 nm的两个发射峰分别位于~3.21 eV和~3.19 eV,与材料中的N杂质有关.当退火时间为30 min时,随退火温度的升高,386 nm和388 nm两个发射峰的PL强度先增加后减小,且退火温度为1573 K时,两个发射峰的PL强度均达到最大. 关键词： 光致发光 退火处理 能级 4H-SiC     

Effect of magnetic annealing on magnetization of BiFeO3 ceramics

The effect of magnetic annealing treatment on the magnetization of multiferroic BiFeO₃ was studied systematically. A series of pelletized nano-sized BiFeO₃ powders were annealed at high temperature under different magnetic fields. Typical ferromagnetic hysteresis loops were obtained at room temperature of the ceramics which were derived from ferromagnetic BiFeO₃ precursors. On the other hand, antiferromagnetic behaviors were observed in other samples synthesized from nonmagnetic precursors. The enhanced magnetic properties were ascribed to the magnetic anisotropy which was induced by the strong magnetic fields. This work indicates that the strong magnetic annealing method is an alternative approach to tuning the magnetic properties of high performance multiferroic materials with canted antiferromagnetic ordering.     

Effect of Pb on structural and magnetic properties of Ba-hexaferrite

Lead was doped in barium hexaferrite by co-precipitation method and the Pb-doped Ba-hexaferrite with compositions of Ba_1−xPb_xFe₁₂O₁₉ was investigated for the first time at x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0. The molar ratio (Fe³⁺/Ba²⁺) of the solutions was kept 12 while pH was maintained at 13 by using NaOH (M=5) as precipitating agent. Prepared samples were sintered at 965±5 °C for three hours. Structural and morphological studies were done by X-ray diffractometer (XRD) and the scanning electron microscope (SEM). SEM micrographs confirmed the formation of hexagonal plate like structures and particle size was observed to be increased with the increase in Pb concentration. The hysteresis loops obtained from the magnetometer showed that with the increase in Pb concentration, the coercivity decreased while magnetic induction and remanence increased, which in turn increased the maximum energy product (BH)_max. Lower coercivity and the moderate increase in saturation magnetization obtained from Pb doping makes the material useful for magnetic recording media and other frequency based applications.     

真空热退火温度对单相Ag2O薄膜微结构和光学性质的影响

利用直流磁控反应溅射技术在玻璃衬底上沉积了单相Ag₂O薄膜,并采用真空热退火对单相Ag₂O薄膜在不同热退火温度 (T _{A) 下进行了1 h热处理.利用X射线衍射谱、扫描电子显微镜和分光光度计研究了 T A对单相Ag2O薄膜微结构和光学性质的影响.研究结果表明, T}A= 300 ℃ 时Ag₂O薄膜中开始出现Ag纳米颗粒,且随着 T _{A的升高薄膜中Ag的含量 关键词： 2}O薄膜')" href="#">Ag₂O薄膜 热退火温度 微结构 光学性质     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光