Study of the magnetization and transport properties of the La(2+x)/3Sr(1−x)/3Mn1−xCrxO3 (0≤x≤0.2) system

The samples with the Mn³⁺/Mn⁴⁺ ratio fixed at 2:1 La_(2+x)/3Sr_(1−x)/3Mn_1−xCr_xO₃ (0≤x≤0.20) have been prepared. The magnetic, electrical transport, and magnetoresistance properties have been investigated. Remarkable transport and colossal magnetoresistance (CMR) effect, as well as cluster glass (CG) behaviors have been clearly observed in the samples studied. It was found that the Curie temperature T_c and insulator−metal transition temperature T_p1 are strongly affected by Cr substitution. The experiment observations are discussed by taking into account the variety of tolerance factors t; the effects of A-site radius 〈r_A〉 and the A-site mismatch effect (σ²).     

The effect of Gd-doping on the charge ordering state of Bi0.3−xGdxCa0.7MnO3 (0≤x≤0.30)

The effect of Gd-doping on the charge ordering (CO) state in perovskite-type manganates Bi_0.3−xGd_xCa_0.7MnO₃ with x=0, 0.02, 0.05, 0.1, 0.3 has been investigated by transport and magnetic property measurements. It is found that CO temperature (T_CO) and antiferromagnetic (AFM) ordering temperature T_N occurring below T_CO decrease obviously with increasing Gd-doping level. Accompanying the variation of T_CO, the increased magnetization and the decreased resistivity are observed. In addition, the increased magnetic inhomogeneity has been also observed in the samples based on the difference between the zero-field-cooling (ZFC) magnetization M_ZFC and field-cooling (FC) magnetization M_FC, which is ascribed to the competition between ferromagnetic (FM) phase induced by Gd-doping and CO AFM phase. The experimental results indicate that the Bi³⁺ lone pair electron with 6s² character plays a dominating role on the CO state of Bi_0.3Ca_0.7MnO₃.     

Two kinds of phase transition in 1-D backward scattering

The one-dimensional Fermion system with backward scattering has been analyzed by use of the methods of bosonization and Gaussian wave functional. We find that there exist two kinds of phase transitions in the spin density degree according to the interaction parameters: one is a Kosterlitz-Thouless type transition and the other is a first order phase transition when backward scattering becomes sufficiently strong.     

Effects of cation size disorder and lattice distortion on metamagnetism in phase-separated manganites

The effects of A-site cation size disorder in ABO₃ type charge-ordered and antiferromagnetic Pr_0.5Ca_0.5MnO₃ system have been studied by substituting La³⁺, Sr²⁺ or Ba²⁺, while keeping the valency of Mn ions and the tolerance factor (t=0.921) constant in the substituted compounds. We find that the substitutions by these larger cations induce successive sharp step-like metamagnetic transitions at 2.5 K. The critical field for metamagnetism is the lowest for 3% Ba substituted compound, which has the largest A-site cation size disorder and the least distorted MnO₆ octahedra, among the compounds reported here. These cation substitutions give rise to ferromagnetic clusters within antiferromagnetic matrix, indicating phase-separation at low temperatures. The growth of the clusters is found to vary with the substitution amount. The local lattice distortion of MnO₆ octahedra enhances the charge ordering temperature and reduces the magnetization at high fields (>1 T) in these manganites.     

Modification of the charge ordering transition in the quasi-one-dimensional conductor (TMTTF)2SbF6 under pressure

We have measured the temperature dependences of the conductance G and the dielectric permittivity ε′ of the (TMTTF)₂SbF₆ compound under a moderate pressure. The maximum of G(T) associated with the Mott-Hubbard localization disappears under pressure. With increasing pressure the peak in ε′(T), corresponding to the charge ordering (CO) phase transition, shifts to lower temperatures and broadens. At pressures above 0.24 GPa, ε′(T) becomes strongly frequency dependent. These modifications are explained in the frame of the extended Hubbard model and a slowing down behavior.     

Charge ordering in amorphous WOx films

We report on the observation of highly anisotropic viscous electronic conducting phase in amorphous WO_1.55 films that occurs below a current (I)- and frequency (f  )-dependent temperature T^∗(I,f)$T^{\ast }(I,f)$. At T<T^∗(I,f)$T<T^{\ast }(I,f)$ the rotational symmetry of randomly disordered electronic background is broken leading to the appearance of mutually perpendicular metallic- and insulating-like states. A rich dynamic behavior of the electronic matter occurring at T<T^∗(I,f)$T<T^{\ast }(I,f)$ provides evidence for an interplay between pinning effects and electron–electron interactions. The results suggest a dynamic crystallization of the disordered electronic matter, viz. formation of sliding Wigner crystal, as well as the occurrence of quantum liquid-like crystal or stripe phase at low drives.     

Valence transition behavior of the doped Falicov-Kimball model at nonzero temperatures

The extrapolation of small-cluster exact-diagonalization calculations is used to study the influence of doping on valence transitions in the spinless Falicov-Kimball model at nonzero temperatures. Two types of doping are examined, and namely, the substitution of rare-earth ions by nonmagnetic ions that introduce (i) one or (ii) none additional electron (per nonmagnetic ion) into the conduction band. It is found that the first type of substitution increases the average f-state occupancy of rare-earth ions, whereas the second type of substitution has the opposite effect. The results obtained are used to describe valence transition behavior of samarium in the hexaboride solid solutions Sm_1−xM_xB₆ (M=Y³⁺, La³⁺, Sr²⁺, Yb²⁺) and a very good agreement of theoretical and experimental results is found.     

Effects of low frequency near metal-insulator transition temperatures on polycrystalline La0.65Ca0.35Mn1−yFeyO3 (where y=0.05-0.10) ceramic oxides

The ac electrical properties of 5-10% Fe doped polycrystalline sample have been investigated by complex impedance analysis over the frequency and temperature ranges of 1-100 kHz and 77-300 K, respectively. The average normalized change (ΔZ′/Δf)/Z₀ has been deduced for these Fe doped CMR samples which shows an increasing trend with iron doping. The most pronounced effect of frequencies is at T_c, with the increase of Fe doping it is observed that not only T_c is lowered substantially but also the height of the peaks of real part of impedance (Z′) is increased which in turn decreases considerably with the increase of the ac field. An equivalent circuit model, R_g(R_gbC_gb), i.e. a resistor-capacitor network, has been proposed to explain the impedance results at different temperatures. The plot between τ and 1/T gives a straight line from where relaxation time (τ₀) has been deduced. The correlated barrier hopping (CBH) model has been employed and the binding energy of the defect states is estimated to be between 0.39 and 0.25 eV while the minimum hoping distance varies within the range of 2.93-5.21 Å for these 5-10% Fe doped LCM samples.     

Exact thermodynamics of pairing and charge–spin separation crossovers in small Hubbard nanoclusters

The exact numerical diagonalization and thermodynamics in an ensemble of small Hubbard clusters in the ground state and finite temperatures reveal intriguing insights into the nascent charge and spin pairings, Bose condensation and ferromagnetism in nanoclusters. The phase diagram off half filling strongly suggests the existence of quantum critical points and subsequent transitions from electron pairing into unsaturated and saturated ferromagnetic Mott–Hubbard like insulators, driven by electron repulsion. Rigorous criteria for the existence of quantum critical points and crossover temperatures are formulated. The phase diagram for 2×4$2\times 4$-site clusters illustrates how these features are scaled with cluster size. The phase separation and electron pairing, monitored by a magnetic field and electron doping, surprisingly resemble phase diagrams in the family of doped high-Tc$T_c$ cuprates.     

Electron coherent and incoherent pairing instabilities in inhomogeneous bipartite and nonbipartite nanoclusters

Exact calculations of collective excitations and charge/spin (pseudo) gaps in an ensemble of bipartite and nonbipartite clusters yield level crossing degeneracies, spin-charge separation, condensation and recombination of electron charge and spin driven by interaction strength, inter-site couplings and temperature. Near crossing degeneracies, the electron configurations of the lowest energies control the physics of electronic pairing, phase separation and magnetic transitions. Rigorous conditions are found for the smooth and dramatic phase transitions with competing stable and unstable inhomogeneities. Condensation of electron charge and spin degrees at various temperatures offers a new mechanism of pairing and a possible route to superconductivity in inhomogeneous systems, different from the BCS scenario. Small bipartite and frustrated clusters exhibit charge and spin inhomogeneities in many respects typical for nano and heterostructured materials. The calculated phase diagrams in various geometries may be linked to atomic scale experiments in high Tc cuprates, manganites and other concentrated transition metal oxides.     

Magnetic properties of the bilayer manganese oxide (Pr0.6La0.4)1.2Sr1.8Mn2O7 under pressure

We investigated the effect of pressure on the magnetic properties of a single crystal of the bilayer manganese oxide (Pr_0.6La_0.4)_1.2Sr_1.8Mn₂O₇ by means of DC magnetization measurements under pressure. The ferromagnetic transition, which is accompanied by a metal-insulator transition, is highly sensitive to pressure. The pressure causes a structural variation, which affects the magnetic properties. We discuss the pressure dependence of the 3d electronic state of the Mn ion in this system.     

Charge transport near pressure-induced antiferromagnetic quantum critical point in Magnéli-phase vanadium oxides

Resistivity (ρ) measurements on Magnéli phases V₇O₁₃ and V₈O₁₅ were performed under high pressures up to 3.5GPa. We have achieved a pressure-induced transition from an antiferromagnetic metal to a paramagnetic metal (PM) at critical pressures P_c≈3.4 and 3.3 GPa for V₇O₁₃ and V₈O₁₅, respectively. The critical behavior of ρ(T) near P_c turned out to be quite unusual in that no noticeable precursor effect was observed. This strongly contrasts with the canonical quantum critical point behavior observed in chemically modified systems such as Ni(S,Se)₂ and V₂O₃. We propose that the presence of two distinct Fermi surface segments is responsible for the observed unusual behaviors.     

Epitaxial strain effects on the metal-insulator transition in V2O3 thin films

Effects of epitaxial stress on the metal-insulator transition of V₂O₃ have been studied for in the form of epitaxial thin films grown on α-Al₂O₃ (0001) and LiTaO₃ (0001) substrates. A metallic phase is stabilized down to 2 K in the V₂O₃ thin film on α-Al₂O₃ (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature T_MI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO₃ (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and T_MI in V₂O₃. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.     

Effects of doping Na on the structure and physical properties of La2/3Ca1/3MnO3

Effects of doping Na on the structure, electrical and magnetic properties of La_2/3Ca_1/3MnO₃ are investigated. A structural phase transition from orthorhombic to rhombohedral structure takes place at y=0.375. All samples show metal-insulator (M-I) transition at the transition temperature and undergo the transition from paramagnetism to ferromagnetism at the Curie temperature T_C. and T_C increase monotonically with increasing Na content. However the Na-doped samples have a shoulder in their electrical transport curves found below and shows a widened magnetic transition process. On the other hand, intrinsic colossal magnetoresistance (CMR) peaks are observed in all the samples, but samples with y around 0.25 show two MR peaks which can be attributed to magnetic inhomogeneity induced by the doped Na⁺ ions. Here we propose a method to broaden the CMR peak of perovskite manganite, which is beneficial for practical applications.     

Hubbard-like models in high spatial dimensions

The present paper studies the properties of Hubbard-like models in high spatial dimensionsD. In a first par the limit of infinite dimension and its main features-i.e.i) the mapping onto a generalized atomic model with an additional auxiliary field andii) the validity of the local approximation for the self-energy-are worked out in a systematic (1/D)-expansion. Since the hopping matrix elements have to be properly scaled with the dimensionD, the (1/D)-expansion is also an expansion in the hopping amplitude. Thus for small hopping theD-limit may serve as a proper approximation for finite-dimensional systems. The second part of the paper adopts the hybridisation-perturbation theory of the single impurity Anderson model in order to construct a perturbation theory for the auxiliary field of the generalized atom which can also be interpreted as an expansion in the hopping amplitude. The non-crossing approximation (NCA) is used to study the antiferromagnetic phase transtion of theD-Hubbard model in the case of half filling: the critical temperature, the antiferromagnetic order parameter and the free energy of the lattice system are calculated. The NCA-results are in quite good agreement with recent results from the imaginary-time discretisation method.     

Absence of metal-insulator transition and coherent interlayer transport in oriented graphite in parallel magnetic fields

Measurements of the magnetoresistivity of graphite with a high degree of control of the angle between the sample and magnetic field indicate that the metal-insulator transition, shown to be induced by a magnetic field applied perpendicular to the layers, does not appear in parallel field orientation. Furthermore, we show that interlayer transport is coherent in less ordered samples and high magnetic fields, whereas appears to be incoherent in less disordered samples. Our results demonstrate the two-dimensionality of the electron system in ideal graphite samples.     

Frequency dependence of the resistive switching effect in Bi2Sr2CaCu2O8+y/Ag film heterocontacts

In this work we have performed the relaxation studies “in situ” of the electron instability effect (EIE) in the heterostructures based on BSCCO single crystals. The new effect of suppression of EIE or colossal electroresistance via application of an alternating low frequency electric field to the heterojunctions in the BSCCO-based single crystals has been found. It has been shown that the top possible frequencies for observation of the effect are of the order of 10³ Hz. This fact is interpreted as accumulation of the oxygen ions driven by the electric field to the interface. On the other hand, it has been shown that the switching events are limited by two time processes: t≈1 ms and about ten seconds. The first ones are caused by rearrangement of a charge net in the degraded surface at the electric field switching. The latter are caused by oxygen diffusion to vacancies under electric field above some threshold value. The considered experimental data confirm the correlation character of the HTSC properties as Mott systems, which appears in extreme sensitivity to the doping level, in the tendency to phase separation under external actions, in the hysteresis character of the metal-insulator transition.     

A Brillouin study of the temperature-dependence of the acoustic modes across the insulator-metal transitions in V2O3 and Cr-doped V2O3

Brillouin scattering studies have been carried out on high-quality single crystals of undoped and 0.9% Cr-doped V₂O₃. The observed modes in both the samples at ∼12 and ∼60 GHz are associated with the surface Rayleigh wave (SRW) and bulk acoustic wave (BAW), respectively. In the undoped sample, the mode frequencies of the SRW and BAW modes decrease as the temperature is lowered from room temperature to the insulator-metal transition temperature (T_IM=T_N=∼130 K). Below the transition, the modes show hardening. In the doped sample, the SRW mode shows a similar temperature-dependence as the undoped one, but the BAW mode shows hardening from room temperature down to the lowest temperature (50 K). This is the first measurement of the sound velocity below T_IM in the V₂O₃ system. The softening of the SRW frequency from 330 K to T_IM can be qualitatively understood on the basis of the temperature-dependence of C₄₄, which, in turn, is related to the orbital fluctuations in the paramagnetic metallic phase. The hardening of the mode frequencies below T_IM suggests that C₄₄ must increase in the antiferromagnetic insulating phase, possibly due to the orbital ordering.     

Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process

Ag-doped and pure ZrO₂ thin films are prepared on Pt/Ti/SiO₂/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO₂ devices. The improved resistive switching behaviour in the Ag doped ZrO₂ devices could be attributed to Ag doping effect on the formation of the stablefilamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO₂ devices, which may be implemented for the application of multi-bit storage.