Mechanical examination of PZT microfibre defects structure

The major problem in the production process of efficient ultrasonic transducer is the preparation of defect-free PZT fibres. A considerable amount of empirical work is presently in progress to achieve this goal of special importance for high-sensitive transducers. However, there is a lack of basic research on the detection of residual stress and defects areas in these fibres due to difficulties in mechanical examination of such flexible elements. This work presents use of the nanoindenter for material characterisation of PZT fibres of 140 µm radius obtained by extrusion method. The sudden depth-excursions during indentation on the edge of fibres have been clarified using Piezoresponse Mode Atomic Force Microscopy method and XRD measurements. The nanoindentation method proves to be the efficient tool capable to detect contribution of defects along the radius, properly estimate hardness as well as corresponding Young's modulus and concluding on structural properties of the micrometre-range ceramics fibres.     

光刻物镜中压电陶瓷驱动器的动态性能研究

针对压电陶瓷在光刻机投影物镜中作为像质补偿镜组促动器的特定应用要求,对一种以集成运算放大器构成的压电陶瓷驱动器的动态性能进行了研究.首先,针对驱动器系统中集成运放固有频率特性对动态性能的影响进行了分析,确定了外部补偿网络的参量.然后,针对驱动器系统大容性负载对动态性能的影响进行了分析,提出了隔离电阻的补偿方法.最后,讨论了驱动器系统中寄生电容对动态性能的影响.计算表明:补偿后的压电陶瓷驱动器系统相位裕量为79 °,阶跃响应无超调量,调节时间为5 μS.基本满足压电陶瓷在光刻物镜中作为像质补偿镜组促动器的稳定性强、响应快速、超调量小等动态要求.     

光刻物镜中压电陶瓷驱动器的动态性能研究

针对压电陶瓷在光刻机投影物镜中作为像质补偿镜组促动器的特定应用要求,对一种以集成运算放大器构成的压电陶瓷驱动器的动态性能进行了研究.首先,针对驱动器系统中集成运放固有频率特性对动态性能的影响进行了分析,确定了外部补偿网络的参量.然后,针对驱动器系统大容性负载对动态性能的影响进行了分析,提出了隔离电阻的补偿方法.最后,讨论了驱动器系统中寄生电容对动态性能的影响.计算表明:补偿后的压电陶瓷驱动器系统相位裕量为79°,阶跃响应无超调量,调节时间为5 μs.基本满足压电陶瓷在光刻物镜中作为像质补偿镜组促动器的稳定性强、响应快速、超调量小等动态要求.     

压电声源驱动的微型热声制冷

有别于传统电动扬声器驱动的热声制冷系统,将以更高频的PZT换能器为驱动源达到谐振系统结构缩减的目的。考虑到热声制冷系统影响因素繁多,在对系统进行性能模拟分析的基础上提出优化设计方案,并建立PZT驱动的热声制冷系统开展实验研究。最后还为下一步工作提出改进思路。     

Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications

In order to study the effect of different buffer layers on the Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films, 10-nm thick (Pb_0.72La_0.28)Ti_0.93O₃ (PLT) and Pb(Zr_0.52Ti_0.48)O₃ buffer layers have been deposited on the Pt(1 1 1)/Ti/SiO₂/Si substrates by pulsed laser deposition, respectively. The top buffer layers were also deposited on PZT thin films with the same thickness of the seed layers in order to enhance the fatigue characteristics of PZT thin films. We compared the results of dielectric constant, hysteresis loops and fatigue resistance characteristics. It was found that the dielectric properties of PZT thin films with PLT buffer layers were improved by comparing with PZT thin films with PZT buffer layers. The polarization characteristics of PZT thin films with PLT buffer layers were observed to be superior to those of PZT thin films using PZT buffer layers. The remanent polarization of PZT thin films showed 36.3 μC/cm² and 2.6 μC/cm² each in the case of use PLT and PZT buffer layers. For the switching polarization endurance analysis, PZT thin films with PLT buffer layers showed more excellent result than that of PZT thin films with PZT buffer layers.     

PT/PZT/PT铁电薄膜的铁电畴和畴壁

用sol-gel法制备出了具有良好铁电性、纯钙钛矿结构的PbTiO₃/Pb(Zr_0.3Ti_0.7)O₃/PbTiO₃(PT/PZT/PT)新型夹心结构铁电薄膜.用扫描力显微镜(SFM)的压电响应模式获得了薄膜铁电畴的垂直于膜平面方向(OPP)、膜平面内(IPP)及OPP的相位和幅度图像，结合理论分析指出薄膜的电畴主要由c畴和偏离垂直于膜平面方向上的c畴构成，薄膜取向的复杂性导致了复杂的畴结构.对于［111］取向的薄膜，当偏离垂直于膜平面方向上的c畴在垂直膜平面方向和面内方向都相反时构成180°的畴壁，在垂直膜平面方向上相同、面内方向相反或由垂直膜平面方向上相反、面内方向相同时构成90°畴壁. 关键词： 铁电薄膜 PT/PZT/PT 电畴和畴壁 扫描力显微镜(SFM)     

The PZT optical fiber phase modulator testing with varying amplitude modulation

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利用平面装置冲击合成PZT 95/5粉体的研究

 利用平面冲击波加载装置,以Pb₃O₄、ZrO₂和TiO₂为原料,Nb₂O₅为掺杂剂,合成了粒度均匀的亚微米级PZT 95/5粉体。实验通过改变飞片的厚度来调节其击靶速度,从而获得不同的冲击条件,并且实验的冲击条件均达到了PZT 95/5的合成要求。X射线衍射（XRD）、扫描电子显微镜（SEM）分析表明,冲击合成后的样品存在明显的晶粒细化效应,同时产生了严重的晶格畸变和大量的晶格缺陷。     

压电晶体位移特性曲线干涉自动测量方法

本文提出了压电晶体(PZT)位移物曲线自动干涉测量方法,该方法利用干涉仪把PZT的微位移量转化成干涉条纹相位变化量,通过快速傅里叶变换(FFT)方法自动复原干涉条纹中包含的相位的变化量,从而高精度地检测出PZT的位移特性曲线.根据该方法,利用CCD摄象机、图象板和干涉仪组合成一套光、机、电一体化的微位移自动测试系统,实际测量了我们研制的PZT随电压变化的位移特性曲线.实验表明,该方法原理实现简单,且能实现高精度、自动、实时和动态测量.     

Contribution of structural order-disorder to the room-temperature photoluminescence of lead zirconate titanate powders

Intense and broad visible photoluminescent (PL) band was observed at room temperature in structurally disordered PbZr_0.53Ti_0.47O₃ powders. The lead zirconate titanate PbZr_0.53Ti_0.47O₃ powders prepared by the polymeric precursor method and heat treated at different temperatures were structurally characterized at long range by means of X-ray diffraction. The PL was measured at room temperature samples heat treated at different temperatures. Experimental measurements and quantum-mechanical calculations showed that the high structural order and the high structural disorder in PbZr_0.53Ti_0.47O₃ lattice are not favorable to the intense PL emission. Only samples containing simultaneous structural order and disorder in their lattice present the intense visible PL emission at room temperature.     

Crystallization behaviour of PZT in multilayer heterostructures

Microstructural and electrical properties of PZT (lead zirconate titanate) thin films prepared by sol-gel techniques at annealing temperatures in the range from 550°C to 900°C are studied. Perovskite (Pe) grain nucleation in PZT film starts but not completes at 550°C. Along with formation of round Pe (111) grains on the Pt (111) interface, the film contains small Pe and pyrochlore (Py) grains. Films annealed at the temperatures higher than 600°C demonstrate column structure of Pe grains, the amount of Py inclusions reduces with the annealing temperature and practically disappears at 700°C. An increase of annealing temperature leads to enhancement of (100) Pe orientation as a result of Ti diffusion on the Pt surface. Polarization decreases with the annealing temperature (maximum at 600°C), whereas permittivity increases up to the annealing temperature of 750°C.     

High-precision technique for in-situ testing of the PZT scanner based on fringe analysis

A technique based on fringe analysis is presented for the in-situ testing of the PZT scanner, including the end rotation analysis and displacement measurement. With the interferograms acquired in the Twyman-Green interferometer, the testing can be carried out in real time. The end rotation of the PZT scanner and its spatial displacement deviation are analyzed by processing the fringe rotation and interval changes; displacement of the PZT scanner is determined by fringe shift according to the algorithm of template-matching, from which the relation between the driving voltage and displacement is measured to calibrate the nonlinearity of the PZT scanner. It is shown by computer simulation and experiments that the proposed technique for in-situ testing of the PZT scanner takes a short time, and achieves precise displacement measurement as well as the end rotation angle and displacement deviation measurement. The proposed method has high efficiency and precision, and is of great practicality for in-situ calibration of the PZT scanner.     

PZT厚膜及高频超声换能器的研究

近年来,基于PZT厚膜的超声换能器研究受到了广泛的重视。本文综述了PZT厚膜制备技术的发展情况,简要介绍了水下声纳和医用超声领域中PZT厚膜型高频超声换能器的应用研制进展。     

采用PZT动态调制的光纤光栅应变力测量技术

提出了一种新型PZT的动态调制光纤光栅应变力测量技术。把光谱仪对峰值波长移动的测量改变为示波器对峰值光功率时间间隔的测量 ,并对这种技术进行了理论分析和实验研究。用交变电压调制固定在光纤光栅上的PZT ,同时对施加在光栅上的应力进行测量。实践证明 ,测光脉冲时间间隔法与光谱峰值移动法的测量结果相同 ,而且两者与理论计算结果相符     

PZT铁电薄膜纳米尺度铁电畴的场致位移特性

利用扫描力显微术的压电响应模式，并基于逆压电效应原理，研究了梯度组成的PZT铁电薄膜纳米尺度铁电畴的场致位移特性.获得了源于纳米尺度铁电畴的压电效应和电致伸缩效应贡献的场致位移回滞线，以及源于线性压电效应和电畴反转效应综合贡献的纳米尺度压电位移 场强蝶形曲线，证实了Caspari Merz理论在纳米尺度上的有效性.发现了梯度铁电薄膜存在纳米尺度印刻现象，认为该现象的内因源于薄膜中的内偏场. 关键词： PZT铁电薄膜 场致位移 纳米尺度 扫描力显微术     

PZT铁电薄膜纳米尺度畴结构的扫描力显微术研究

利用扫描力显微术中压电响应模式原位研究了（111）择优取向的PZT60/40铁电薄膜的纳米尺度畴结构及其极化反转行为.铁电畴图像复杂的畴衬度与晶粒中的畴排列和晶粒的取向密切相关.直接观察到极化反转期间所形成的小至30nm宽的台阶结构，该台阶结构揭示了（111）取向的PZT60/40铁电薄膜在极化反转期间其畴成核与生长机理主要表现为铁电畴的纵向生长机理. 关键词： 畴结构 反转机理 PZT薄膜 扫描力显微术     

PZT 95/5铁电陶瓷的冲击压缩Hugoniot特性研究

 采用一级气体炮加载装置,利用加窗VISAR技术,对极化和未极化两种状态的PZT 95/5铁电陶瓷进行了逆向冲击实验,在0.52~3.8 GPa冲击压力范围内,得到了PZT 95/5铁电陶瓷两种状态的σ-u关系。对比文献已有实验数据显示,PZT 95/5铁电陶瓷的Hugoniot曲线与初始密度值密切相关,高密度的PZT 95/5铁电陶瓷在0~3.0 GPa压力范围内的σ-u关系接近线弹性,较低压力下不同极化状态的Hugoniot数据表明,PZT 95/5铁电陶瓷发生了冲击相变。     

PZT四方相区介电常数εr与晶格畸变关系的研究

从Haun的PZT热力学理论出发，给出了PZT四方相区介电常数ε_r与晶格畸变c/a关 系的基本方程，并深入地根据相关实验资料和物理图像的合理推论，建立了关于晶格畸变c/ a与介电常数ε_r相互依赖的基本关系式.然后，根据该基本关系式仔细地研究了PZT四 方相区晶格畸变c/a对介电常数ε_r影响的物理图像.与相关实验资料比较表明，基本 关系式得到的介电常数ε_r随晶格畸变c/a的变化规律,与相关实验结果相比较，两者 吻合得 关键词： 晶格畸变 r')" href="#">介电常数ε_r 四方相 PZT     

基于PZT的非球面能动抛光盘设计优化

基于PZT压电陶瓷驱动器的非球面能动抛光盘,能够在PZT驱动器的作用下改变面形,用于中小口径非球面镜加工。为优化设计基于PZT压电陶瓷驱动器的非球面能动抛光盘,利用有限元分析方法,计算各驱动器的影响函数,计算非球面能动抛光盘的输出面形,与理论面形比较得到剩余残差。以优化设计驱动器排布方式和极头直径为例,当非球面能动抛光盘中心到非球面工件中心的距离L为120mm,分别计算比较,极头直径为Φ10mm时,19单元PZT圆形排布与21单元PZT方形排布的剩余残差;以及19单元PZT圆形排布时,极头直径为Φ10mm与Φ14mm的剩余残差。结果表明,非球面能动抛光盘产生变形后的剩余残差RMS相应分别为0.303μm、0.367μm、0.328μm。因此,基于PZT压电陶瓷驱动器的非球面能动抛光盘确定选用19单元PZT圆形排布且极头直径Φ10mm。     

Synthesis and characterization of microwave processed PZT material

With a view to investigate the influence of microwave sintering on the structural and dielectric properties of lead zirconate titanate (PZT), the samples were prepared by citrate gel route. The well crystallized single phase perovskite PZT powders were obtained after calcination at 700 °C for 2 h. The X-ray diffraction (XRD) pattern clearly indicates the formation of PZT material with single phase. FTIR and TG-DTA studies also confirmed the formation of PZT along with the reaction process involved in the synthesis. The crystallite sizes of the samples calcined at different temperatures were calculated using Scherrer’s formula and were compared with those obtained by the transmission electron microscope (TEM) technique. The surface morphological features of all the samples were studied using a scanning electron microscope (SEM) while the chemical composition was obtained by an energy dispersive X-ray spectroscope (EDS). The variation of dielectric constant and loss tangent with temperature and frequency of both the type of samples was also investigated and the observed behavior is explained qualitatively.