A TEM study of the stability of intermetallic precipitates in Zircaloy nuclear reactor components

Transmission electron microscopy (TEM) has been used to characterise the radiation-induced changes in Zr(Cr,Fe)₂ intermetallic precipitates present in Zircaloy-2 and -4 nuclear reactor components. The results show that the precipitates become completely amorphous at low fluences (<1 × 10²⁴ n·m⁻²) during low temperature neutron irradiation (about 330 K) with no associated chemical composition change. At higher temperatures (about 573 K), a duplex amorphous-crystalline structure is produced. The precipitates retain a crystalline core surrounded by a peripheral amorphous layer that advances inwards with increasing fluence. The amorphous outer layer is coincident with a depletion of Fe that is dispersed into the surrounding hcp -phase matrix. Subsequent post-irradiation heat-treatment below the amorphous phase recrystallisation temperature results in the back-diffusion of Fe into the precipitates.     

Sn/Ge(1 1 1) α-phase: characterization of image resonances by specular electron reflection and selective electron scattering

Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities.     

Elemental steps in the growth of thin β-Ga2O3 films on CoGa(1 0 0)

The oxidation of CoGa(1 0 0) at 700 K was studied by means of high resolution electron energy loss spectroscopy (EELS), scanning tunneling microscopy, low energy electron diffraction and Auger electron spectroscopy (AES). At 700 K, thin well-ordered β-Ga₂O₃ films grow on CoGa(1 0 0). The EEL spectrum of the Ga-oxide films exhibit Fuchs–Kliewer phonons at 305, 455, 645, and 785 cm⁻¹. For low oxygen exposure (<0.2 L), the growth of oxide-islands starts at step edges and on defects. The oxide films have the shape of long, rectangular islands and are oriented in the [1 0 0] and [0 1 0] directions of the substrate. For higher oxygen exposure, islands of β-Ga₂O₃ are found also on the terraces. After an exposure of 200 L O₂ at 700 K, the CoGa(1 0 0) surface is homogeneously covered with a thin film of β-Ga₂O₃.