Thermally activated dewetting of organic thin films: the case of pentacene on SiO<Subscript>2</Subscript> and gold

The morphology of pentacene organic thin films deposited on SiO₂ and Au(111) surfaces using organic molecular beam deposition (OMBD) has been characterized by a multi-technique approach. Among the techniques applied were X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and thermal desorption spectroscopy (TDS). Our rather detailed studies reveal that on both substrates the growth is strongly influenced by dewetting and islanding phenomena, yielding very rough surfaces. Surprisingly, substantial changes in the morphology were observed also after deposition on room-temperature samples on a time scale of several hours. The rather extensive set of in situ XPS data was analyzed in the framework of a simple model, which allows us to derive rather detailed information on the roughness parameters.     

Mass and kinetic energy distribution of the species generated by laser ablation of La<Subscript>0.6</Subscript>Ca<Subscript>0.4</Subscript>MnO<Subscript>3</Subscript>

The mass distributions of the species generated by laser ablation from a La_0.6Ca_0.4MnO₃ target using laser irradiation wavelengths of 193 nm, 266 nm and 308 nm have been investigated with and without a synchronized gas pulse of N₂O. The kinetic energies of the species are measured using an electrostatic deflection energy analyzer, while the mass distributions of the species were analyzed with a quadrupole mass filter. In vacuum (pressure 10⁻⁷ mbar), the ablation plume consists of metal atoms and ions such as La, Ca, Mn, O, LaO, as well as multiatomic species, e.g. LaMnO⁺. The LaO⁺ diatomic species are by far the most intense diatomic species in the plume, while CaO and MnO are only detected in small amounts. The interaction of a reactive N₂O gas pulse with the ablation plume leads to an increase in plume reactivity, which is desired when thin manganite films are grown, in order to incorporate the necessary amount of oxygen into the film. The N₂O gas pulse appears to have a significant influence on the oxidation of the Mn species in the plume, and on the creation of negative ions, such as LaO⁻,O⁻ and O₂⁻.     

Growth of β-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoparticles by pulsed laser ablation technique

This work investigates pulsed laser ablation for Ga₂O₃ nanoparticles. Nanoparticles with diameters of 10 to 500 nm were deposited on silicon substrates in large quantities, by KrF excimer laser ablation of a GaN (99.99% purity) target in high purity nitrogen (99.9995%) background gas at room temperature, without a catalyst. The particle size and phase structure of the as-deposited nanoparticles are examined by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), and selected-area electron diffraction (SAD). FE-SEM images show that the nanoparticles aggregate to form micron-size nanoclusters at chamber pressures of 1 and 5 Torr. On the other hand, nanoparticles aggregate with chain-like nanostructures, are synthesized at high chamber pressures (10 Torr). TEM images further reveal that chain-like nanostructures are formed by the aggregation of individual spherical and ellipsoidal nanoparticles. Photoluminescence measurement shows stable and broad blue emission at 445 nm. PACS 81.20.-N; 81.15.Fg; 75.50.Vv     

Double-pulse LIBS of gadolinium oxide ablated by femto- and nano-second laser pulses

Emission characteristics of gadolinium (Gd) oxide are studied, using ns and fs laser pulses for ablation in double-pulse laser induced breakdown spectroscopy (LIBS). In the current conditions of pulse energy and signal detection timing, emission intensity enhancement in the reheating mode is 25-fold, but little effect can be observed in a pre-pulse mode. It is shown that the optimum focus position of the ablation pulse is about 5 mm apart from the sample surface in the reheating mode. Although little emission can be observed in the single-pulse configuration with fs ablation pulses, the intense emission can be observed in the reheating mode in the double-pulse configuration.     

Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi<Subscript>1.5</Subscript>Zn<Subscript>1.0</Subscript>Nb<Subscript>1.5</Subscript>O<Subscript>7</Subscript> thin films

Bismuth Zinc niobate (Bi_1.5Zn_1.0Nb_1.5O₇) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.     

Examining surfaces of oxidized aluminum exposed to СО<Subscript>2</Subscript> laser pulses

Comprehensive microstructure studies of the surfaces of duralumin sheets exposed to an intense microsecond СО₂ laser pulse (Е ~ 500 J) are performed for the first time. The irradiated area is ~100 cm². A pulse with a duration of ~5 μs has an ~200 ns leading peak. Passivated duralumin sheets subjected to pressure and thermal treatment resulting in the formation of Al₂O₃ layers ~7 μm thick are irradiated. Electron and atomic force microscopy, X-ray spectral analysis, and optical profilometry are used in the study. Detected traces of nonequilibrium evaporation contained a polycrystalline aggregate of several stoichiometric and nonstoichiometric phases of aluminum oxide and its compounds with manganese and magnesium.     

Temporal pulsewidth and the wavelength dependences of the product ions obtained by laser ablation of solid C<Subscript>60</Subscript>

By ablating solid C₆₀ with a laser pulse, we observe various processes such as the prompt- and the delayed-ionization of C₆₀, the fragmentation into molecular ions and the formation of cluster ions. We found these processes show distinct dependences on the temporal pulse width, the power and the wavelength of the ablation laser. From the observations, we could confirm efficient coupling of laser energy to C₆₀ through the molecular absorption even with a laser pulse width less than the electron-phonon coupling time of the C₆₀ molecule.     

Investigation on the effects of addition of SiO<Subscript>2</Subscript> nanoparticles on ionic conductivity,FTIR, and thermal properties of nanocomposite PMMA–LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>–SiO<Subscript>2</Subscript>

Composite polymer electrolyte systems composed of poly(methyl methacrylate) (PMMA) as the host polymer, lithium trifluoromethanesulphonate (also known as lithium triflate; LiCF₃SO₃) as dopant salt, and a variety of different concentrations of nano-sized fumed silica (SiO₂) as inorganic filler were studied. The effect upon addition of SiO₂ on the ionic conductivity of the composite polymer electrolytes was investigated, and it was proven that the ionic conductivity had been enhanced. In addition, the interfacial stability also showed improvement. Maximum conductivity was obtained upon addition of 2 wt.% SiO₂. The complexation of PMMA and LiCF₃SO₃ was verified through Fourier transform infrared studies. The thermal stability of the polymer electrolytes was also found to improve after dispersion of inorganic filler. This was proven in the thermogravimetric studies.     

Influence of consecutive picosecond pulses at 532 nm wavelength on laser ablation of human teeth

The interaction of 40 ps pulse duration laser emitting at 532 nm wavelength with human dental tissue (enamel, dentin, and dentin–enamel junction) has been investigated. The crater profile and the surface morphology have been studied by using a confocal auto-fluorescence microscope (working in reflection mode) and a scanning electron microscope. Crater profile and crater morphology were studied after applying consecutive laser pulses and it was found that the ablation depth increases with the number of consecutive pulses, leaving the crater diameter unchanged. We found that the thermal damage is reduced by using short duration laser pulses, which implies an increased retention of restorative material. We observe carbonization of the irradiated samples, which does not imply changes in the chemical composition. Finally, the use of 40 ps pulse duration laser may become a state of art in conservative dentistry.     

TiO<Subscript>2</Subscript> microstructures by inversion of macroporous silicon using atomic layer deposition

An approach is presented which is capable of fabricating arbitrarily shaped three-dimensional microstructures. Two methods—namely, macroporous silicon and atomic layer deposition—are combined to realize structures in the micrometer and submicrometer range. Using TiO₂ as an example, the fabrication of single hollow objects as well as complex network structures is shown. The scalability and the wide range of applicable materials are the key points of this method for future applications.     

Laser characteristics of 2-µm microchip Tm,Ho:Lu<Subscript>2</Subscript>SiO<Subscript>5</Subscript> laser

Cryogenic temperature operation of a 〈010〉-cut microchip Tm,Ho:Lu₂SiO₅ laser end-pumping by a fiber-coupled laser-diode is presented. A 2.73 W absorbed pump power is used to generate a maximum laser output of 470 mW, representing a 17.2% optical-to-optical conversion efficiency and a 61.7% slope efficiency corresponding to absorbed power. In the experiment, the oscillating wavelength shifting from 2.03 to 2.08 μm has been observed and a single 2.03 μm wavelength oscillation has obtained. To our knowledge, this work is the first time to investigate the Cryogenic temperature operation of microchip Tm,Ho:Lu₂SiO₅.     

The development of the physical and electrical characteristics of multi-layer TiO<Subscript>2</Subscript>–W–TiO<Subscript>2</Subscript> thin films

In this study, two different thin films, TiO₂ thin film and TiO₂–W–TiO₂ multi-layer thin films (W, tungsten), are prepared by RF magnetron sputtering onto glass substrates. The crystal structure, morphology, and transmittance of TiO₂ and TiO₂–W–TiO₂ multi-layer thin films are investigated by X-ray diffraction, SEM, and UV-Vis spectrometer, respectively. The amorphous, rutile, and anatase TiO₂ phases are observed in the TiO₂ thin film and in the TiO₂–W–TiO₂ multi-layer thin films. The deposition of tungsten as the inter-layer will have large effect on the transmittance and phase ratios of rutile and anatase phases in the TiO₂–W–TiO₂ multi-layer thin films. The crystal intensities of amorous TiO₂ will decrease as the tungsten is used as the middle layer in the multi-layer structure. The band gap energy values of TiO₂ thin film and TiO₂–W–TiO₂ multi-layer thin films are evaluated from (αhν)^1/2 versus energy plots, and the calculated results show that the energy gap decreases from 3.21 eV (TiO₂ thin film) to 3.08∼3.03 EV (TiO₂–W–TiO₂ multi-layer thin films).     

Surface ablation оf aluminum and silicon by ultrashort laser pulses of variable width

Single-shot thresholds of surface ablation of aluminum and silicon via spallative ablation by infrared (IR) and visible ultrashort laser pulses of variable width τ_las (0.2–12 ps) have been measured by optical microscopy. For increasing laser pulse width τ_las < 3 ps, a drastic (threefold) drop of the ablation threshold of aluminum has been observed for visible pulses compared to an almost negligible threshold variation for IR pulses. In contrast, the ablation threshold in silicon increases threefold with increasing τ_las for IR pulses, while the corresponding thresholds for visible pulses remained almost constant. In aluminum, such a width-dependent decrease in ablation thresholds has been related to strongly diminished temperature gradients for pulse widths exceeding the characteristic electron-phonon thermalization time. In silicon, the observed increase in ablation thresholds has been ascribed to two-photon IR excitation, while in the visible range linear absorption of the material results in almost constant thresholds.     

Influence of Matrix Nature on the Structural Characteristics of In<Subscript>2</Subscript>O<Subscript>3</Subscript>–CeO<Subscript>2</Subscript> and SnO<Subscript>2</Subscript>–CeO<Subscript>2</Subscript> Composites Fabricated by the Impregnation Method

The structural characteristics, valence states, and distribution of cerium ions between the components in In₂O₃–CeO₂ and SnO₂–CeO₂ nanocomposites fabricated using the impregnation method were studied. X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDX) were used to show that, during impregnation, cerium ions are not included into In₂O₃ crystals and are disposed only on their surface in the form of nano-sized crystallites or amorphous clusters. On the other side, under the contact of CeO₂ clusters with a surface of SnO₂ matrix crystals, cerium ions penetrate into the surface layer of these crystals. In contrast to an In₂O₃–CeO₂ system, where the addition of CeO₂ does not affect the conduction activation energy, where cerium oxide is added to SnO₂, the observed increase in the resistance of a SnO₂–CeO₂ composite is accompanied by a sufficient increase in activation energy. These data and the XPS spectra confirm the modification of the surface layers of conductive SnO₂ crystals as, a result of the penetration of cerium ions into these layers.     

Effect of annealing temperature on microstructures and optical properties of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> films

Evolution of microstructure and optical property with annealing temperature has been examined for Ba_0.9Sr_0.1TiO₃ films derived from one single precursor solution containing polyethylene glycol polymer. The films sintered below 750°C exhibit a uniform phase structure across the cross-sections and an ordinary optical thin film feature, while the Ba_0.9Sr_0.1TiO₃ films crystallized at 750°C or higher temperature render a lamellar texture consisting of dense and porous Ba_0.9Sr_0.1TiO₃ layers and a good performance as a one-dimensional photonic crystal. The discrepancy in cross-sectional morphology and reflectance property observed in these Ba_0.9Sr_0.1TiO₃ films has been preliminarily explained.     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

Fluorescence switch of dye-infiltrated SiO<Subscript>2</Subscript> inverse opal based on acid-base vapors or light

The acid-base vapors/light double responsive dye-infiltrated SiO₂ inverse opal photonic crystals (PCs) were fabricated by sacrificial template method and a subsequent infiltration of spiropyran derivative dye molecules. The fluorescence of ring-open dye molecules infiltrated in PCs can be switched on/off based on different fluorescence properties of spiropyran dye under stimuli of acid-base vapors or light, when PCs with suitable stopband were selected. The fluorescence switch behavior based on PCs has potential applications in data storage, color displays, chemical and biological sensors.     

Growth and characterization of nanostructured anatase phase TiO<Subscript>2</Subscript> thin films prepared by DC reactive unbalanced magnetron sputtering

Titanium dioxide thin films were deposited on three different unheated substrates by unbalanced magnetron sputtering. The effects of the sputtering current and deposition time on the crystallization of TiO₂ thin films were studied. The TiO₂ thin films were deposited at three sputtering current values of 0.50, 0.75, and 1.00 A with different deposition times of 25, 35, and 45 min, respectively. The surface morphology of the films was investigated by atomic force microscopy (AFM). The structure was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The film thickness was determined by field emission scanning electron microscopy (FE-SEM), and the optical property was evaluated with spectroscopic ellipsometry. The results show that polycrystalline anatase films were obtained at a low sputtering current value. The crystallinity of the anatase phase increases as the sputtering current increases. Furthermore, nanostructured anatase phase TiO₂ thin films were obtained for all deposition conditions. The grain size of TiO₂ thin films was in the range 10–30 nm. In addition, the grain size increases as the sputtering current and deposition time increase.     

Laser and electrical current induced phase transformation of In<Subscript>2</Subscript>Se<Subscript>3</Subscript> semiconductor thin film on Si(111)

Phase transformation of thin film (∼30 nm)In₂Se₃/Si(111) (amorphous→crystalline) was performed by resistive annealing and the reverse transformation (crystalline→amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, binary chalcogenide semiconductor, In₂Se₃ is of interest for non-volatile phase-change memory. Amorphous In _x Se _y was deposited at room temperature on Si(111) after pre-deposition of a crystalline In₂Se₃ buffer layer (0.64 nm). Upon resistive annealing to 380°C, the film was transformed into a γ-In₂Se₃ single crystal with its {0001} planes parallel to the Si(111) substrate and parallel to Si , as evidenced by scanning tunneling microscopy, low energy electron diffraction, and X-ray diffraction. Laser annealing with 20-ns pulses (0.1 millijoules/pulse, fluence≤50 mJ/cm²) re-amorphized the region exposed to the laser beam, as observed with photoemission electron microscopy (PEEM). The amorphous phase in PEEM appears dark, likely due to abundant defect levels inhibiting electron emission from the amorphous In _x Se _y film.     

Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off

GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al_2O_3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm~2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.