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A. S. Devyatisilny 《Technical Physics》2004,49(5):651-652
It is shown that, when the absolute and apparent accelerations are measured simultaneously, the problem of autonomous inertial
navigation is reduced to the solvable inverse problem. Physical and geometrical (kinematic) conditions for solvability are
formulated. 相似文献
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A. Vecchione D. Zola G. Carapella M. Gombos S. Pace G. Costabile C. Noce 《The European Physical Journal B - Condensed Matter and Complex Systems》2003,31(2):151-157
Low frequency transport measurements are performed on GdSr2RuCu2O8 pellets. The observed current-voltage curves are qualitatively explained in the framework of a simple phenomenological model
accounting for coexistence in the sample of ferromagnetism and superconductivity. A Curie temperature T
cM
= 133 K and a superconducting critical temperature T
cS
= 18 K, with an onset temperature T
cO
= 33 K, are extracted from the analysis of the current-voltage curves.
Received 18 September 2002 Published online 4 February 2003
RID="a"
ID="a"e-mail: canio@sa.infn.it 相似文献
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Picosecond transient thermoreflectance (PTTR) of metals is shown to depend strongly on the temperature coefficients of the complex dielectric constant. The properties of PTTR are studied for TE and TM waves as a function of the angle of incidence. A method is suggested for subtracting the thermal transport properties of thin films from PTTR measurements. 相似文献
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M. Fabry J.R. Cussenot M. Numano 《Journal of Quantitative Spectroscopy & Radiative Transfer》1975,15(9):811-814
Electron densities and temperatures have been measured by using a Langmuir probe, as well as spectroscopic observations of continuum radiation and of spectral lines, in a cesium plasma. It is shown that the excitation temperatures determined from relative intensities of spectral lines do not always agree with electron temperature determinations. An interpretation of this discrepancy is proposed and discussed. 相似文献
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Direct evidence of high temperature superconductivity in one-unit-cell FeSe films on SrTiO_3 substrate by transport and magnetization measurements
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《中国物理 B》2015,(11)
Zero resistance and Meissner effect are two crucial experimental evidences of superconductivity in determining a new kind of superconductor, which can be detected by transport and diamagnetic measurements. In this paper, we briefly review the main transport and magnetization results on the one unit cell(1-UC) Fe Se films grown on SrTiO3(STO) substrates from our team in recent years, which identify the high temperature superconductivity in 1-UC FeSe films. 相似文献
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Transport of electrons which have undergone scattering with formation of electronhole pairs is considered within the framework of a one-dimensional model. Analytical expressions are obtained for the probability of secondary electron output into a vacuum and the interference pattern of light absorption in the film for film illumination from the direction of the substrate and from the vacuum side, with consideration of multiple electron scattering on phonons and the boundary of the emission layer.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No, 6, pp, 89–93, June, 1985. 相似文献
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Temperature-dependent conductivity and thermopower measurements are carried out for undoped and In-doped CuO thin films. We investigate the effects of In-doping on carrier transport properties of CuO thin films in the temperature range of 300?<?T?<?400?K. Carrier transport is dominated by simple thermally activated conduction in the undoped film. On the other hand, small polarons play an essential role in the carrier transport properties in the In-doped films. By increasing the In content, the conduction behaviour transits from adiabatic limit to the non-adiabatic limit, and the conductivity decreases. 相似文献
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Thermally-evaporated thin films of tetraphenylporphyrin, TPP, with thickness range from (175 to 735) nm had been prepared. Annealing temperatures ranging from (273–473) K do not influence the amorphous structure of these films. The influence of environmental conditions: film thickness, temperature and frequency on the electrical properties of TPP thin films had been reported. It was found that dc conductivity increases with increasing temperature and film thickness. The extrinsic conduction mechanism is operating in temperature range of (293–380) K with activation energy of 0.13 eV. The intrinsic one is in temperatures >380 K via phonon assisted hopping of small polaron with activation energy of 0.855 eV. The ac electrical conductivity and dielectric relaxation in the temperature range (293–473) K and in frequency range (0.1–100) kHz had been also studied. It had been shown that theoretical curves generated from correlated barrier hopping (CBH) model gives the best fitting with experimental results. Analysis of these results proved that conduction occurs at low temperatures (300–370) K by phonon assisted hopping between localized states and it is performed by single polaron hopping process at higher temperatures. The temperature and frequency dependence of both the real and imaginary parts of dielectric constant had been reported. 相似文献
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A. D. Bozhko E. A. Kataeva T. Takagi M. G. Mikheev M. B. Guseva 《Moscow University Physics Bulletin》2007,62(4):229-232
The electrical conductivity of amorphous silicon- and oxygen-containing W-, Nb-, and Cr-carbon nanocomposite films is studied. It is revealed that, at a metal concentration of 10–40 at. % and in the temperature range 80–400 K, the electrical conductivity of the films is a power function of temperature. In terms of inelastic electron tunneling, the average number of localized states in the intercluster potential barriers is calculated as a function of the metal concentration. 相似文献
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Phonon spectroscopy measurements were used to examine the scattering of high frequency phonons (300 GHz-1 THz) in amorphous materials. The experiments were done with the use of time and frequency resolved measurements of the phonon transmission behaviour through amorphous single films of different thicknesses. The typical film thicknesses were of the order of 10 nm. In contrast to the pure amorphous semiconductors Si and Ge our experiments show inelastic phonon scattering processes in the case of SiO2 and SiH. This inelastic phonon scattering also occurs when the pure semiconductors Si and Ge are prepared in an O2 or H2 atmosphere, but is missing when the preparation process is done in an N2 atmosphere. In films of the pure semiconductors a-Si and a-Ge we only found evidence to elastic scattering processes. In further experiments at heated a-SiH samples we could examine the atomical bonded hydrogen to be the center of the inelastic phonon scattering.The measurements and investigations described in this work were done in time of preparing a thesis at: Physikalisches Institut Teil 1, Universität Stuttgart, Pfaffenwaldring 57, D-70569 Stuttgart, Germany 相似文献
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M. Schulze S. Gourley S. A. Brown A. Dunbar J. Partridge R. J. Blaikie 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2003,24(1-3):291-294
A range of percolating atomic cluster films, with
nanoscale overall dimensions, have been studied using a
combination of in situ and
ex situ electrical transport
measurements, together with field emission electron microscopy
and atomic force microscopy. Bismuth clusters with mean diameter
20 nm were deposited between electrical contacts defined by
electron beam lithography. The morphology of the films can be
understood within percolation theory, and the electrical
measurements show complex behaviour characteristic of both
percolation effects and modification of the cluster films by
current flow and by oxidation. 相似文献
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J. Sládková 《Czechoslovak Journal of Physics》1963,13(6):452-458
The optical constants of oxide films formed by heating single-crystal silicon specimens were measured. The measurements were carried out in a range of 300° to 1000°C. The thickness and refractive indices of the oxide films were determined by the polarimetric method. In the measured temperature interval the oxidation process can be divided into three groups. In the first range, from 300° to 560°C, no oxidation of the silicon surface was observed. In the second interval, from 560° to 950°C, the oxidation of silicon proceeded according to the linear oxidation law. At temperatures from 950° to 1000°C the thickness of the oxide films increased with the square root of the heating time according to the parabolic oxidation law. 相似文献
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Optical dephasing measurements using degenerate four-wave mixing (DFWM) were performed on thin dye-polymer films at room temperature. Incoherent light centered at 575 nm was used as a source for ultrafast measurements on the blue side of the inhomogeneous distribution of the oxazine dye Nile Blue. Under these conditions, a new form of interference was observed as a sinusoidal variation of the DFWM signal versus delay time. A measured interference period of 1.96+/-0.07 fs corresponds to the optical cycle time of the light source. Numerical solutions for the DFWM intensity confirm the oscillation effect and estimate a measured dephasing time of 2-3 fs. 相似文献
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V. V. Filippov 《Russian Physics Journal》2009,52(1):59-65
The electric current distribution is studied for probe measurements performed on anisotropic wafers. The phenomena caused
by anisotropy of conduction are explained using the laws of electrodynamics, which makes it possible to consider the results
obtained to be physically general, independent of the nature of anisotropy of electrical conduction. The methods are proposed
for determination of the components of specific electrical conductivity tensor in anisotropic films.
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 51–57, January, 2009. 相似文献