Laser operation and Raman self-frequency conversion in Yb:KYW microchip laser

We present a diode-pumped Yb:KYW microchip laser. The passive Q-switchedand CW regimes of operation for the Yb:KYW microchip laser have been investigated. An efficiency for CW operation of up to 10% with regard to incident pump has been obtained. Raman self-frequency conversion in the Q-switched regime has been observed. Received: 27 May 2002 / Revised version: 4 July 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +375-17/2840-879, E-mail: asg@dragon.bas-net.by     

Efficient tunable laser operation of diode- pumped Yb,Tm:KY(WO4)2 around 1.9 μm

A new laser medium – Yb,Tm:KY(WO₄)₂ – for diode pumped solid state laser applications operating around 1.9 to 2.0 μm has been investigated and the main laser characteristics are presented. Diode pumping at 981 nm and around 805 nm was realised. For 981-nm pumping, the excitation occurs into Yb³⁺ ions followed by an energy transfer to Tm³⁺ions. A slope efficiency of 19% was realised. For pumping around 805 nm, the excitation occurs directly into the Tm³⁺ ions. Here a maximum slope efficiency of 52%, an optical efficiency of 40%, and output powers of more than 1 W were realised. Using a birefringent quartz plate as an intracavity tuning element, the tunability of the Yb,Tm:KY(WO₄)₂ laser in the spectral range of 1.85–2.0 μm has been demonstrated. The possibility of laser operation in a microchip cavity configuration for this material has also been shown. Received: 12 March 2002 / Revised version: 20 May 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-531/592-4116, E-mail: stefan.kueck@ptb.de     

A compact frequency-doubled 10-kHz PRF copper-vapour-laser-pumped dye laser

A 10-kHz pulse-repetition-frequency dye-laser master-oscillator power amplifier, end-pumped by a copper vapour laser (CVL), is reported. This laser was based on recently available, lightweight and compact CVL and dye laser components. Dye laser tunability was achieved from 592 to 622 nm and, when the oscillator was etalon line-narrowed, up to 1.5 W of single-etalon-mode output was obtained from the amplifier at the 608-nm peak tuning wavelength. By frequency doubling this amplified output in a BBO crystal we obtained up to 225 mW of 5-GHz 308-nm output, which is suitable for the performance of tropospheric hydroxyl radical concentration measurements. Received: 16 July 2002 / Revised version: 6 November 2002 / Published online: 5 February 2003 RID="*" ID="*"Present address: Department of Geography, University of Cambridge, Cambridge, CB2 3EN, UK RID="**" ID="**"Corresponding author. Fax: +44-1865/272400, E-mail: d.coutts1@physics.ox.ac.uk     

Diode-pumped Nd:YVO<Subscript>4</Subscript> and Nd:KGd(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> 1.3 μm lasers passively Q-switched with PbS-doped glass

Diode-pumped Nd:YVO₄ and Nd:KGW lasers passively Q-switched with PbS-quantum dot-doped phosphate glass were demonstrated. For the Nd:YVO₄ laser, pulses 110 ns in duration with a 13% Q-switching efficiency were obtained. The absorption recovery time of the PbS-doped glass was measured to be 27±4 ps. Some recommendations for more efficient use of PbS-doped glasses for Q-switching of diode-pumped lasers are suggested on the basis of our analysis. Received: 29 July 2002 / Revised version: 18 September 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +375-17/232-6286, E-mail: savitski@eudoramail.com     

Self-adaptive Nd:YLF holographic laser with selectable wavelength operation

We demonstrate, for the first time to our knowledge, operation of a self-adaptive holographic laser with wavelength selection, which uses Nd:YLF as the gain medium. The holographic laser was self-starting and, by virtue of the temporal dynamics in writing the gain grating, passively Q-switched the cavity to produce pulses with 20–50 ns duration. A pulse energy of 184 mJ was obtained from the system with beams having a TEM₀₀ spatial profile. Single-longitudinal-mode operation was observed with near-transform-limited bandwidth. Received: 30 July 2002 / Revised version: 1 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: s.y.lam@ic.ac.uk     

Amplification and wave mixing of induced and spontaneous emission in semiconductor laser amplifiers

We theoretically describe and experimentally investigate the spatio-spectral wave mixing of induced and spontaneous emission in large-area InGaAs-semiconductor laser amplifiers. The dynamic light-matter-coupling is described by a spatially resolved theory based on Maxwell–Bloch–Langevin equations, taking into account many-body-carrier interactions, energy transfer between the carrier and phonon systems and, in particular, the spatio-temporal interplay of stimulated and amplified spontaneous emission and the noise caused by spontaneous emission. Our numerical model reveals the fundamental physical processes which are responsible for the spectral power distribution of the amplified laser light and predicts the emission properties of high-power semiconductor laser amplifiers, such as emission spectra and input power–output power characteristics. Received:30October2002/Revisedversion:21November2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-711/6862-349, E-mail: Edeltraud.Gehrig@dlr.de RID="**" ID="**"Also at: Institute of Physics, Tampere University of Technology, P.O. Box 692, FIN-33101, Tampere, Finland RID="***" ID="***"Present address: Heidelberger Druckmaschinen AG, Speyerer Strasse 6, 69115 Heidelberg, Germany RID="****" ID="****"Present address: Lightbit Corporation, 411 Clyde Avenue, Mountain View, CA 94043, USA     

A 7-W diode-pumped Nd:YVO4 cw laser at 1.34 μm

A Nd:YVO₄ laser, end-pumped by a fiber-coupled diode-laser array, generates 7.3 W of output power at 1342 nm, the highest so far reported for this host crystal. The slope efficiency is 40% and the output-beam divergence is close to the diffraction limit. An important point in attaining such results is the choice of crystals with low Nd concentration. Received: 16 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +39-050/844333, E-mail: dilieto@df.unipi.it RID="**" ID="**"Permanent address: Scuola Normale Superiore, Piazza dei Cavalieri 7, Pisa, Italy     

Emission of laser pulses due to transitions from metastable to metastable levels in strontium vapor

Multi-line laser transitions from one metastable triplet state to another at wavelengths of 2.92, 3.01, 2.69 and 2.60 μm have been obtained through high pulse repetition frequency longitudinal discharge in a mixed gas of strontium vapor and helium buffer gas. The intensity ratio of these laser lines was 5:4:4:1. As far as we know, these laser lines have never been reported except for 3.01 μm. Some mechanisms for forming a population inversion are initially discussed on the basis of analyzing features of corresponding energy-level structure and experimental phenomena. It is reasonable to name this kind of laser as an M–M transition laser according to the feature of the lasing process. Received: 15 October 2002 / Published online: 9 April 2003 RID="*" ID="*"Corresponding author. Fax: +86-0571/8795-1328, E-mail: pbl66@zju.edu.cn     

High-repetition-rate eye-safe optical parametric oscillator intracavity pumped by a diode-pumped Q-switched Nd:YVO<Subscript>4</Subscript> laser

A high-repetition-rate eye-safe optical parametric oscillator (OPO), using a non-critically phase-matched KTP crystal intracavity pumped by an acousto-optically (AO) Q-switchedNd:YVO₄ laser, is experimentally demonstrated. It is found that the average OPO signal power at 1573 nm can be efficiently increased by increasing the pulse repetition rate. Moreover, the intracavity OPO process effectively shortens the pulse width so that it is in the range 5∼8 ns for pulse repetition rates of 10 to 80 kHz. As a result of the relatively short pulse, the peak power at 1573 nm is higher than 2 kW at a pulse repetition rate of 80 kHz. Received: 10 July 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +886-35/729-134, E-mail: yfchen@cc.nctu.edu.tw     

Noise as reliability screening for semiconductor lasers

The low-frequency electrical noise in semiconductor lasers is measured and used for device-reliability screening, which is a sensitive and non-destructive method. In the experiment, we developed some approaches to improve the validity of reliability screening by using noise criteria. A new method of determining the threshold level of noise criteria is given. The experimental results show that this method is effective. Received: 26 September 2002 / Revised version: 28 January 2003 / Published online: 9 April 2003 RID="*" ID="*"Corresponding author. Fax: +86-431/462-7013, E-mail: huguijun@sina.com     

Intracavity optical parametric oscillator at 1572-nm wavelength pumped by passively Q-switched diode-pumped Nd:YAG laser

An intracavity optical parametric oscillator (IOPO) based on bulk KTP crystal was constructed with a Nd:YAG slab as an active medium pumped by a 300-W diode array and Cr:YAG as a passive Q-switch. A signal pulse of 1.9-mJ energy at 1572-nm wavelength was demonstrated. In the cavity, optimized with respect to single-pulse energy, a five-fold shortening of signal-pulse duration with respect to 1064-nm pump radiation was observed. A twice as large level of signal peak power of 650 kW, compared to the pump laser in the same cavity without the IOPO, was achieved. A conversion efficiency of 44% with respect to the 1064-nm pump beam and 3.8% with respect to diode pump energy was demonstrated. Received: 15 October 2002 / Revised version: 19 February 2003 / Published online: 16 April 2003 RID="*" ID="*"Corresponding author. Fax: +48-22/666-8950, E-mail: wzendzian@wat.edu.pl     

Ultrahigh-efficiency TEM<Subscript>00</Subscript> diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser

Ultrahigh-efficiency TEM₀₀ operation is demonstrated in a diode-pumped Nd:YVO₄ laser in a bounce amplifier geometry using a specially designed astigmatically optimised cavity configuration. Optical efficiency >68% is demonstrated and up to 27.1 W of output power for multimode operation. For single-mode TEM₀₀ operation, an output power of 23.1 W for 39.5 W of diode pumping was produced with beam propagation parameters of M_x ²=1.3 and M_y ²=1.1. Received: 10 October 2002 / Revised version: 9 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: a.minassian@ic.ac.uk     

Efficient generation of blue light by frequency doubling of a Nd:YAG laser operating on 4 F 3/24 I 9/2 transitions

Efficient room-temperature operation of ⁴ F _3/2⁴ I _9/2 transitions in diode-end-pumped Nd:YAG lasers at 946 nm and 938.5 nm is reported. 7.0-W continuous-wave output power at 946 nm and 3.9 W at 938.5 nm have been obtained. An analytical model has been developed for the quasi-three-level laser including the influence of energy-transfer upconversion. Frequency doubling of these transitions in periodically poled KTP generated blue light at 473 nm and 469 nm. Both single-pass extra-cavity as well as intracavity schemes have been investigated. Received: 31 July 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +46-8/750-5430, E-mail: stefan.bjurshagen@acreo.se     

Efficient and highly photostable solid-state dye lasers based on modified dipyrromethene.BF2 complexes incorporated into solid matrices of poly(methyl methacrylate)

We report on the laser action of modified dipyrromethene.BF₂ complexes both dissolved in poly(methyl methacrylate) and copolymerized with methyl methacrylate. All recently synthesized dyes have the chromophore core of laser dye pyrromethene 567, differing in the substituent in position 8. The new dyes showed important and most significant increases in both lasing efficiency and photostability. When the laser samples were pumped transversely at 534 nm, laser emission was obtained with efficiencies of over 30% in most cases, to be compared with a lasing efficiency of 12% exhibited by reference dye pyrromethene 567 under the same experimental conditions. Some of the materials exhibited highly photostable laser action, with no sign of degradation in the laser output after 60000 pump pulses at the same position of the sample at a repetition rate of 10 Hz, whereas the laser emission of reference dye pyrromethene 567 dropped to zero after less than 40000 pump pulses. Received: 19 November 2002 / Revised version: 20 February 2003 / Published online: 9 April 2003 RID="*" ID="*"Corresponding author. Fax: +34-91/564-2431, E-mail: acostela@iqfr.csic.es     

Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber

Spectroscopic data of a V³⁺:YAG passive Q-switch crystal were measured. The absorption recovery time was determined to be of 37±7 ns and the ground state absorption cross section was estimated to be 0.7×10^-18 cm² at 1.44 μm and 3.5×10^-18 cm² at 1.34 μm. Passively Q-switched operation of diode pumped 1.44 μm and 1.3 μm Nd:YAG lasers was demonstrated using this crystal as saturable absorber. Average output powers of 1.42 W (1.44 μm) and 1.56 W (1.34 μm) and pulse energies of 24 μJ (1.44 μm) and 25 μJ (1.34 μm) were observed, respectively. Received: 19 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-40/42838-6281, E-mail: kretschmann@physnet.uni-hamburg.de     

Laser-driven micro-rocket

We have developed a new type of miniature rocket motor for pointing and positioning microsatellites. A specially prepared tape with a transparent layer, through which the laser light passes, and an absorbing layer produce the thrust by the laser ablation process. We have achieved a specific impulse of 1800 s (greater than possible with chemistry), and laser momentum coupling coefficients of up to 50 dyn/W. The preprototype achieved 68 dyn of thrust. We discuss the target interaction physics and some of our measurements with the preprototype thruster. Received: 7 October 2002 / Accepted: 8 February 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-505/4663-877, E-mail: crphipps@aol.com     

Self-starting five optical cycle pulse generation in Cr<Superscript>4+</Superscript>:YAG laser

We report stable self-starting near-transform-limited 26-fs pulses at 250-mW output power from a Kerr-lens mode-locked (KLM) Cr⁴⁺:YAG laser using chirped mirrors in combination with prisms. The highest output power achieved in KLM regime was 600 mW at 55-fs pulse duration. The experimental results agree well with the results of theoretical analysis with respect to KLM self-starting ability and stability against continuous-wave and multi-pulse operation. Parameter ranges for stable transform-limited KLM pulses as well as the shortest achievable pulse durations are established. Using an InGaAs-InP semiconductor saturable absorber mirror we could obtain self-starting 57-fs pulses at the average output power of 200 mW. Two-photon absorption was found to be the main mechanism favoring the multiple-pulse operation. Received: 2 May 2002 / Revised version: 16 July 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/58801-38799, E-mail: sorokina@tuwien.ac.at     

Design of a nanoscale silicon laser

The recent observation of optical gain from silicon nanocrystals embedded in SiO₂ opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser architecture using CMOS-compatible materials. In this paper we present two designs for a waveguide laser in which silicon nanocrystals embedded in SiO₂ are used as the optical gain media. One design employs a SiO₂ membrane containing encapsulated Si nanocrystals. Preliminary calculations given here show that a highly resonant laser cavity can be produced in a SiO₂ membrane using sub-wavelength structures. This photonic crystal architecture, used to guide and contain the light, can be combined with a gain medium of optically active Si nanocrystals synthesized in the SiO₂ membrane using ion implantation/thermal annealing to produce a Si-based laser. The laser cavity dimensions can be matched to the near-infrared wavelengths where optical gain has been observed from Si nanocrystals. The second design utilizes silicon nanocrystals embedded in a distributed-feedback laser cavity fabricated in SiO₂. Lasing action over a broad wavelength range centered at ∼770 nm should be possible in both of these configurations. Received: 20 December 2002 / Accepted: 7 January 2003 / Published online: 11 April 2003 RID="*" ID="*"Corresponding author. Fax: +1-434/982-2037, E-mail: supriya@virginia.edu     

Thermal tuning and modulation of a DFB fibre laser with a thin-film heater

Results are given for thermal tuning and modulation of a 1556-nm distributed feedback fibre laser by resistive heating of a thin silver film chemically deposited on the fibre. Without reaching the limits of performance, linear tuning is demonstrated at a rate of 1.72 pm/mW up to about 200 pm, and a peak-to-peak modulation of 100 MHz up to modulation frequencies of 60 Hz. The heat flow is analyzed, and the coated fibre is characterized in terms of the static and dynamic wavelength response to the applied electric power. The performance of the scheme is tested by recording part of the ν₁+ν₃ combination band spectrum of ¹³C₂H₂ with thermal modulation and scanning of the fibre laser. Received: 12 March 2002 / Revised version: 24 June 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +45/4593-1137, E-mail: sus@dfm.dtu.dk     

100-W average-power, high-energy nanosecond fiber amplifier

We report on the fiber-based amplification of a Q-switched Nd:YAG thin-disk laser. At repetition rates between 3 and 50 kHz output powers up to 100 W are generated. Pulse energies up to 4 mJ, with diffraction-limited beam quality, are generated in a 30-μm Yb-doped large-mode-area fiber, furthermore pulse energies up to 8 mJ are achieved from a multimode fiber amplifier. Received: 8 May 2002 / Revised version: 10 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +49-3641/65-7680, E-mail: Jens.Limpert@uni-jena.de