Vertical and direct integration of heterojunction phototransistors and laser diodes

An optoelectronic integrated device based on the concept of vertical and direct integration is described. Four types of integrated devices composed of multiple heterojunction phototransistors and laser diodes are developed and the devices successfully achieve thirteen functions: optical switching, amplification, thresholding, bistability, light-controlled optical bistability, light-controlled optical thresholding, tristability, set and reset functions in tristable states, set and reset functions in tetrastable states, and bistable and tristable flip-flop functions.     

Optical waveguide fabrication and integration with a micro-mirror inside photosensitive glass by femtosecond laser direct writing

Photosensitive glass is a potentially important material for micro-fluidic devices that can be integrated with micro-optical components for biochemical analysis. Here, we demonstrate the fabrication of optical waveguides inside glass by femtosecond laser direct writing. The influence of the laser parameters on the waveguide properties is investigated, and it is revealed that the waveguide mode can be well controlled. The single mode is achieved at a low writing energy, while the multimode is achieved with increasing energy. In spite of a longitudinally elongated elliptical shape of the cross-sectional profile, the far-field pattern of the single-mode waveguide shows an almost symmetric profile. The measured propagation loss and the coupling loss are evaluated to be ∼0.6 dB/cm and ∼1.6 dB at a wavelength of 632.8 nm, respectively, under the conditions of 1.0–2.0 μJ pulse energy and 200–500 μm/s scan speed. The increased optical loss is associated with a higher waveguide mode at higher writing energy. Furthermore, the integration of waveguides and a micromirror made of a hollow microplate inside the glass is demonstrated to bend the laser beam at an angle of 90° in a small chip. The bending loss is estimated to be smaller than 0.3 dB. PACS 42.62.-b; 42.82.Cr; 82.50.Pt; 42.79.Gn; 42.81.Qb     

Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes

A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.     

Optical focus control system for laser welding and direct casting

A non-intrusive optical sensor system has been developed for focus control of laser welding. This detects the light generated by the process through the laser delivery optics, and exploits the chromatic aberrations of these optics to detect any laser focal error at the workpiece. This system works for a wide range of materials and welding parameters, and example results are presented. The sensor has also been applied to laser ‘direct casting’, a process in which 3-D structures are built by flowing metal powder into a focused laser beam. In this case, melt pool temperature is also important, and so additional optics are incorporated into the sensor to provide a pyrometric temperature measurement which is used to control the laser power.     

Three-dimensional integration of microoptical components buried inside photosensitive glass by femtosecond laser direct writing

We report the three-dimensional (3D) integration of microoptical components such as microlenses, micromirrors and optical waveguides in a single glass chip by femtosecond (fs) laser direct writing. First, two types of microoptical lenses were fabricated inside photosensitive Foturan glass by forming hollow microstructures using fs laser direct writing followed by thermal treatment, successive wet etching and additional annealing. One type of lens is the cylindrical microlens with a curvature radius R of 1.0 mm, and the other is the plano-convex microlens with radius R of 0.75 mm. Subsequently, by the continuous procedure of hollow microstructure fabrication, a micromirror was integrated with the plano-convex microlens in the single glass chip. Further integration of waveguides was performed by internal refractive index modification using fs laser direct writing after the hollow structure fabrication of the microlens and the micromirror. A demonstration of the laser beam transmission in the integrated optical microdevice shows that the 3D integration of waveguides with a micromirror and a microoptical lens in a single glass chip is highly effective for light beam guiding and focusing. PACS 42.62.-b; 81.05.Kf; 42.82.Cr; 82.50.Pt; 42.79.Gn     

Compact continuous-wave blue lasers by direct frequency doubling of laser diodes with periodically poled lithium niobate waveguide crystals

A compact continuous-wave blue laser has been demonstrated by direct frequency doubling of a laser diode with a periodically poled lithium niobate (PPLN) waveguide crystal. The optimum PPLN temperature is near 28 degrees C, and the dependence of waveguide crystals on crystal temperature is less sensitive than that of bulk crystals. A total of 14.8 mW of 488-nm laser power has been achieved.     

Optical feedback tolerance of mode-locked laser diodes and some feedback reduction methods: a numerical investigation

The effects of optical feedback on the dynamics of mode-locked lasers are investigated numerically. It is found that, with an external reflectance in excess of a critical value, stable fundamental mode-locked operation is destroyed in most cases, except possibly where the external cavity length is near a multiple of the optical length of the laser. Optical isolation by concatenated amplifier-absorber modules has been investigated and found to be possible in principle, but requiring high currents and fast SA circuit response times and with its quality dependent on the module and reflector geometry.     

High-power direct green laser oscillation of 598 mW in Pr(3+)-doped waterproof fluoroaluminate glass fiber excited by two-polarization-combined GaN laser diodes

We demonstrated a high-power and highly efficient Pr-doped waterproof fluoride glass fiber laser at 522.2 nm excited by two-polarization-combined GaN laser diodes and achieved a subwatt output power of 598 mW and slope efficiency of 43.0%. This system will enable us to make a vivid laser display, a photocoagulation laser for eye surgery, a color confocal scanning laser microscope, and an effective laser for material processing. Direct visible ultrashort pulse generation is also expected.     

The properties of boron carbide/silicon heterojunction diodes fabricated by Plasma-Enhanced Chemical Vapor Deposition

p-n heterojunction diodes have been fabricated from boron carbide (B_1–x C _x ) and n-type Si(111). Boron carbide thin films were deposited on Si(111) using Plasma-Enhanced Chemical Vapor Deposition (PECVD) from nido-pentaborane (B₅H₉) and methane (CH₄). Composition of boron carbide thin films was controlled by changing the relative partial pressure ratio between nido-pentaborane and methane. The properties of the diodes were strongly affected by the composition and thickness of boron carbide layer and operation temperatures. Boron carbide/silicon heterojunction diodes show rectifying properties at temperatures below 300° C. The temperature dependence of reverse current is strongly dependent upon the energy of the band gap of the boron carbide films.     

High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13 degrees

Laser diodes with highly strained InGaAs quantum wells, emitting at 1130 nm, embedded in a GaAs waveguide were investigated. This Letter reviews the design of the vertical structure for enclosing high output power in angles smaller than 18 degrees . Example designs were processed to 200 microm stripe-width lasers with an 8-mm-long optical cavity. When these are mounted on C mounts, they give an output power of 38 W under quasi-cw operation from a single emitter.     

Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates

We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8-off 4H-SiC wafers, the quality of the layers and the nature of realized p–n structures are discussed. Mesa diode structures were fabricated. Al was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current–voltage measurements (I–V). I–V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained.     

Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I–V and C–V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.     

3D integration of microcomponents in a single glass chip by femtosecond laser direct writing for biochemical analysis

3D integration of microcomponents in a single glass chip by femtosecond laser direct writing followed by post annealing and successive wet etching is described for application to biochemical analysis. Integration of microfluidics and microoptics realized some functional microdevices like a μ-fluidic dye laser and a biosensor. As one of practical applications, we demonstrate inspection of living microorganisms using the microchip with 3D microfluidic structures fabricated by the present technique.     

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管(Ⅱ)

如今，InGaN／GaN基量子阱发光二极管已经商业化，而且InGaN／GaN基量子阱激光二极管已实现连续波室温运转，使用寿命超过10000小时，虽然如此，但还没有完全搞清楚这些器件的发光机理．试验中通常使用连续输出He-Cd激光器（325nm）作光源，或者使用20—50mA注入电流来研究In—GaN量子阱样品或发光二极管光学性质，本文上篇研究了量子阱厚度与发光二极管发光功率的关系，lnGaN和GaN之间的晶格失配产生压电场，从而导致量子束缚斯塔克效应，而量子束缚斯塔克效应强     

A new derivation of loop amplitudes by direct integration

The multi-loop amplitude of the general dual-resonant model is derived rigorously from the N-reggeon vertex of Lovelace by direct integration. Methods for the direct integral, the inversion of a complicated matrix and the evaluation of its determinant are developed. The identification with Abelian integrals is straight forward and instructive. These methods will also be very helpful for more general dual-resonant models.     

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管(Ⅰ)

文章评论性地介绍了金属有机化学气相外延技术（MOCVD）生长氮化物半导体GaN和InGaN以及激子局域化效应、量子束缚斯塔克效应对它们的光学性能的影响，详细比较了这两种效应对GaN基半导体发光二极管和激光二极管特性的影响，特别是量子束缚斯塔克效应以显著不同的方式影响着发光二极管和激光二极管的性能；文章还讨论了在A面蓝宝石衬底上生长GaN的情况．     

Optimization of the wallplug-efficiency of laser diodes by an electro-optical-thermal black-box model

A black-box model for the optimization of the wallplug efficiency by choosing appropriate “external” parameters of an edge emitting laser – resonator length, operating current – is presented and applied to a high-power laser and a communication laser.     

Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes

Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385–410 nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.     

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10^5 times.In addition,a high Ion/Ioff ratio of ~10^8 was achieved by the boron-implanted technology.We used Technology Computer Aided Design(TCAD)to analyze reasons for the improved performance of the SBD with boron-implanted termination.The improved performance of diodes may be attributed to that B+could confine free carriers to suppress electron field crowding at the edge of the diode,which could improve the breakdown voltage and suppress the reverse leakage current.     

Simultaneous acquisition of color and distance information by LiDAR with RGB visible laser diodes

We propose colors light detection and ranging (LiDAR) using visible laser diodes (LD) of red, green, and blue (RGB) colors to identify colors as well as obtain position information of surrounding objects. To verify the principle, we performed round-trip time-of-flight (TOF) measurements by irradiating a target of different colors with pulsed light from a LD of RGB colors. It is clarified that accurate distance measurements of up to 12 m can be realized in any RGB LD, and the received signal in each LD has different intensity characteristics depending on the target color. From a judgment table created from reception intensity characteristics for three types of LD and seven types of color target, the color of each target is successfully identified.