Vertical and direct integration of heterojunction phototransistors and laser diodes

An optoelectronic integrated device based on the concept of vertical and direct integration is described. Four types of integrated devices composed of multiple heterojunction phototransistors and laser diodes are developed and the devices successfully achieve thirteen functions: optical switching, amplification, thresholding, bistability, light-controlled optical bistability, light-controlled optical thresholding, tristability, set and reset functions in tristable states, set and reset functions in tetrastable states, and bistable and tristable flip-flop functions.     

Optical waveguide fabrication and integration with a micro-mirror inside photosensitive glass by femtosecond laser direct writing

Photosensitive glass is a potentially important material for micro-fluidic devices that can be integrated with micro-optical components for biochemical analysis. Here, we demonstrate the fabrication of optical waveguides inside glass by femtosecond laser direct writing. The influence of the laser parameters on the waveguide properties is investigated, and it is revealed that the waveguide mode can be well controlled. The single mode is achieved at a low writing energy, while the multimode is achieved with increasing energy. In spite of a longitudinally elongated elliptical shape of the cross-sectional profile, the far-field pattern of the single-mode waveguide shows an almost symmetric profile. The measured propagation loss and the coupling loss are evaluated to be ∼0.6 dB/cm and ∼1.6 dB at a wavelength of 632.8 nm, respectively, under the conditions of 1.0–2.0 μJ pulse energy and 200–500 μm/s scan speed. The increased optical loss is associated with a higher waveguide mode at higher writing energy. Furthermore, the integration of waveguides and a micromirror made of a hollow microplate inside the glass is demonstrated to bend the laser beam at an angle of 90° in a small chip. The bending loss is estimated to be smaller than 0.3 dB. PACS 42.62.-b; 42.82.Cr; 82.50.Pt; 42.79.Gn; 42.81.Qb     

Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes

A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.     

Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs)

We report on new InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar and phototransistors (CEHBTs/CEHPTs) with a low turn-on voltage. The composite emitter comprised of the digital graded superlattice emitter and the InGaP sub-emitter is used to smooth out potential spike associated with the emitter–base heterojunction and to obtain a low emitter–base turn-on voltage. A fabricated CEHBT exhibits a small offset voltage of 55 mV and a low turn-on voltage of 0.83 V with a dc current gain as high as 150. In case of a CEHPT’s collector–emitter characteristics with base floating, optical gains increase with increasing input optical power. Furthermore, the collector current saturation voltage is small due to a low turn-on voltage. We obtain an optical gain larger than 6.83 with a collector current saturation voltage smaller than 0.5 V. On the other hand, performance results of a CEHPT with two- and three-terminal configuration were investigated and compared.     

Optical focus control system for laser welding and direct casting

A non-intrusive optical sensor system has been developed for focus control of laser welding. This detects the light generated by the process through the laser delivery optics, and exploits the chromatic aberrations of these optics to detect any laser focal error at the workpiece. This system works for a wide range of materials and welding parameters, and example results are presented. The sensor has also been applied to laser ‘direct casting’, a process in which 3-D structures are built by flowing metal powder into a focused laser beam. In this case, melt pool temperature is also important, and so additional optics are incorporated into the sensor to provide a pyrometric temperature measurement which is used to control the laser power.     

Three-dimensional integration of microoptical components buried inside photosensitive glass by femtosecond laser direct writing

We report the three-dimensional (3D) integration of microoptical components such as microlenses, micromirrors and optical waveguides in a single glass chip by femtosecond (fs) laser direct writing. First, two types of microoptical lenses were fabricated inside photosensitive Foturan glass by forming hollow microstructures using fs laser direct writing followed by thermal treatment, successive wet etching and additional annealing. One type of lens is the cylindrical microlens with a curvature radius R of 1.0 mm, and the other is the plano-convex microlens with radius R of 0.75 mm. Subsequently, by the continuous procedure of hollow microstructure fabrication, a micromirror was integrated with the plano-convex microlens in the single glass chip. Further integration of waveguides was performed by internal refractive index modification using fs laser direct writing after the hollow structure fabrication of the microlens and the micromirror. A demonstration of the laser beam transmission in the integrated optical microdevice shows that the 3D integration of waveguides with a micromirror and a microoptical lens in a single glass chip is highly effective for light beam guiding and focusing. PACS 42.62.-b; 81.05.Kf; 42.82.Cr; 82.50.Pt; 42.79.Gn     

Compact continuous-wave blue lasers by direct frequency doubling of laser diodes with periodically poled lithium niobate waveguide crystals

A compact continuous-wave blue laser has been demonstrated by direct frequency doubling of a laser diode with a periodically poled lithium niobate (PPLN) waveguide crystal. The optimum PPLN temperature is near 28 degrees C, and the dependence of waveguide crystals on crystal temperature is less sensitive than that of bulk crystals. A total of 14.8 mW of 488-nm laser power has been achieved.     

Optical feedback tolerance of mode-locked laser diodes and some feedback reduction methods: a numerical investigation

The effects of optical feedback on the dynamics of mode-locked lasers are investigated numerically. It is found that, with an external reflectance in excess of a critical value, stable fundamental mode-locked operation is destroyed in most cases, except possibly where the external cavity length is near a multiple of the optical length of the laser. Optical isolation by concatenated amplifier-absorber modules has been investigated and found to be possible in principle, but requiring high currents and fast SA circuit response times and with its quality dependent on the module and reflector geometry.     

High-power direct green laser oscillation of 598 mW in Pr(3+)-doped waterproof fluoroaluminate glass fiber excited by two-polarization-combined GaN laser diodes

We demonstrated a high-power and highly efficient Pr-doped waterproof fluoride glass fiber laser at 522.2 nm excited by two-polarization-combined GaN laser diodes and achieved a subwatt output power of 598 mW and slope efficiency of 43.0%. This system will enable us to make a vivid laser display, a photocoagulation laser for eye surgery, a color confocal scanning laser microscope, and an effective laser for material processing. Direct visible ultrashort pulse generation is also expected.     

Design and simulation of AlN-based vertical Schottky barrier diodes

The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 m? · cm~2 and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10~(15) cm~(-3) to 3×10~(16) cm~(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 m? · cm~2 by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm~2 was obtained in the structure of 11-μm DLT and 10~(16) cm~(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.     

The properties of boron carbide/silicon heterojunction diodes fabricated by Plasma-Enhanced Chemical Vapor Deposition

p-n heterojunction diodes have been fabricated from boron carbide (B_1–x C _x ) and n-type Si(111). Boron carbide thin films were deposited on Si(111) using Plasma-Enhanced Chemical Vapor Deposition (PECVD) from nido-pentaborane (B₅H₉) and methane (CH₄). Composition of boron carbide thin films was controlled by changing the relative partial pressure ratio between nido-pentaborane and methane. The properties of the diodes were strongly affected by the composition and thickness of boron carbide layer and operation temperatures. Boron carbide/silicon heterojunction diodes show rectifying properties at temperatures below 300° C. The temperature dependence of reverse current is strongly dependent upon the energy of the band gap of the boron carbide films.     

High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13 degrees

Laser diodes with highly strained InGaAs quantum wells, emitting at 1130 nm, embedded in a GaAs waveguide were investigated. This Letter reviews the design of the vertical structure for enclosing high output power in angles smaller than 18 degrees . Example designs were processed to 200 microm stripe-width lasers with an 8-mm-long optical cavity. When these are mounted on C mounts, they give an output power of 38 W under quasi-cw operation from a single emitter.     

3D integration of microcomponents in a single glass chip by femtosecond laser direct writing for biochemical analysis

3D integration of microcomponents in a single glass chip by femtosecond laser direct writing followed by post annealing and successive wet etching is described for application to biochemical analysis. Integration of microfluidics and microoptics realized some functional microdevices like a μ-fluidic dye laser and a biosensor. As one of practical applications, we demonstrate inspection of living microorganisms using the microchip with 3D microfluidic structures fabricated by the present technique.     

Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates

We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8-off 4H-SiC wafers, the quality of the layers and the nature of realized p–n structures are discussed. Mesa diode structures were fabricated. Al was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current–voltage measurements (I–V). I–V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained.     

Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I–V and C–V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.     

A new derivation of loop amplitudes by direct integration

The multi-loop amplitude of the general dual-resonant model is derived rigorously from the N-reggeon vertex of Lovelace by direct integration. Methods for the direct integral, the inversion of a complicated matrix and the evaluation of its determinant are developed. The identification with Abelian integrals is straight forward and instructive. These methods will also be very helpful for more general dual-resonant models.     

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管(Ⅱ)

如今，InGaN／GaN基量子阱发光二极管已经商业化，而且InGaN／GaN基量子阱激光二极管已实现连续波室温运转，使用寿命超过10000小时，虽然如此，但还没有完全搞清楚这些器件的发光机理．试验中通常使用连续输出He-Cd激光器（325nm）作光源，或者使用20—50mA注入电流来研究In—GaN量子阱样品或发光二极管光学性质，本文上篇研究了量子阱厚度与发光二极管发光功率的关系，lnGaN和GaN之间的晶格失配产生压电场，从而导致量子束缚斯塔克效应，而量子束缚斯塔克效应强     

利用飞秒激光直写实现透明介电材料中三维维微微纳结构的制备与集成

本文综述了利用飞秒激光三维直写技术,在玻璃和晶体等透明介电材料中实现微流体、微光学、微电子学等一系列功能性微纳结构,并进一步构筑新型微纳光子器件的原理、技术与应用。     

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管(Ⅰ)

文章评论性地介绍了金属有机化学气相外延技术（MOCVD）生长氮化物半导体GaN和InGaN以及激子局域化效应、量子束缚斯塔克效应对它们的光学性能的影响，详细比较了这两种效应对GaN基半导体发光二极管和激光二极管特性的影响，特别是量子束缚斯塔克效应以显著不同的方式影响着发光二极管和激光二极管的性能；文章还讨论了在A面蓝宝石衬底上生长GaN的情况．     

激光二极管抽运下铥/镱共掺碲镓酸盐玻璃光谱特性研究

研究了808 nm和977 nm激光二极管抽运下铥/镱共掺TeO₂-Ga₂O₃-R₂O(R=Li，Na，K)玻璃光谱特性.利用Judd-Ofelt 理论计算了Tm³⁺离子在碲镓酸盐玻璃中自发辐射跃迁概率、荧光分支比和辐射寿命等光谱参数.在977 nm激光二极管抽运下，观测到Tm³⁺/Yb³⁺共掺碲镓酸盐玻璃很强的476 nm上转换蓝光(¹G₄→³H₆)和较弱的650 nm上转换红光(¹G₄→³H₄和³F_2，3→³H₆).分析表明476 nm蓝光发射为三光子吸收过程，650 nm红光发射为双光子和三光子混合吸收过程；而在808 nm激光二极管抽运下，玻璃上转换蓝色荧光为双光子吸收过程.实验发现，随着碱金属离子半径的增大，977 nm激光二极管抽运下蓝光上转换发光强度增强，而用808 nm激光二极管抽运蓝光上转换发光无明显的变化. 关键词： 碲镓酸盐玻璃 铥镱共掺 Judd-Ofelt 理论 上转换