In situ ion beam sputter deposition and X‐ray photoelectron spectroscopy (XPS) of multiple thin layers under computer control for combinatorial materials synthesis

Deposition of ultra‐thin layers under computer control is a frequent requirement in studies of novel sensors, materials screening, heterogeneous catalysis, the probing of band offsets near semiconductor junctions and many other applications. Often large‐area samples are produced by magnetron sputtering from multiple targets or by atomic layer deposition (ALD). Samples can then be transferred to an analytical chamber for checking by X‐ray photoelectron spectroscopy (XPS) or other surface‐sensitive spectroscopies. The ‘wafer‐scale’ nature of these tools is often greater than is required in combinatorial studies, where a few square centimetres or even millimetres of sample is sufficient for each composition to be tested. The large size leads to increased capital cost, problems of registration as samples are transferred between deposition and analysis, and often makes the use of precious metals as sputter targets prohibitively expensive. Instead we have modified a commercial sample block designed to perform angle‐resolved XPS in a commercial XPS instrument. This now allows ion‐beam sputter deposition from up to six different targets under complete computer control. Ion beam deposition is an attractive technology for depositing ultra‐thin layers of great purity under ultra‐high vacuum conditions, but is generally a very expensive technology. Our new sample block allows ion beam sputtering using the ion gun normally used for sputter depth‐profiling of samples, greatly reducing the cost and allowing deposition to be done (and checked by XPS) in situ in a single instrument. Precious metals are deposited cheaply and efficiently by ion‐beam sputtering from thin metal foils. Samples can then be removed, studied and exposed to reactants or surface treatments before being returned to the XPS to examine and quantify the effects. Copyright © 2016 The Authors Surface and Interface Analysis Published by John Wiley & Sons Ltd.     

Depth profiling organic/inorganic interfaces by argon gas cluster ion beams: sputter yield data for biomaterials,in‐vitro diagnostic and implant applications

Argon gas cluster ion beam sources are likely to become much more widely available on XPS and SIMS instruments in the next few years. Much attention has been devoted to their ability to depth profile organic materials with minimum damage. What has not been the focus of attention (possibly because it has been very difficult to measure) is the large ratio of sputter yield for organic materials compared with inorganic materials using these sources and the special opportunities this presents for studies of organic/inorganic interfaces. Traditional depth profiling by monatomic argon ions introduces significant damage into the organic overlayer, and because sputter rates in both organic and inorganic are similar for monatomic ions the interface is often ‘blurred’ due to knock‐on and other damage mechanisms. We have used a quartz crystal technique to measure the total sputter yield for argon cluster ions in a number of materials important in medical implants, biomaterials and diagnostic devices, including polymethyl methacrylate, collagen, hydroxyapatite, borosilicate glass, soda lime glass, silicon dioxide and the native oxides on titanium and stainless steel. These data fit a simple semi‐empirical equation very well, so that the total sputter yield can now be estimated for any of them for the entire range of cluster ion energy typical in XPS or SIMS. On the basis of our total sputter yield measurements, we discuss three useful ‘figures‐of‐merit’ for choosing the optimum cluster ion energy to use in depth profiling organic/inorganic samples. For highest selectivity in removing the organic but not the inorganic material the energy‐per‐atom in the cluster should be below 6 eV. A practical balance between selectivity and reasonably rapid depth profiling is achieved by choosing a cluster ion energy having between around 3 and 9 eV energy‐per‐atom. Copyright © 2013 John Wiley & Sons, Ltd.     

Accurate measurement of sputtered depth for ion sputtering rates and yields: the mesh replica method

For the accurate measurements of crater depths, ion sputtering rates and ion sputtering yields in studies of sputter‐depth profiling using Auger electron spectroscopy (AES) or X‐ray photoelectron spectroscopy (XPS), a proposed mesh replica method has been evaluated. In this method, during ion sputtering, grids of between 50 and 400 mesh (per inch) are placed on the sample to retain unsputtered regions of the original surface to be used as reference. This enables a more accurate measurement of the depth to be made using a stylus profilometer close to the analytical region. The closer‐pitch meshes were thought to offer the prospect of measurements of higher accuracy. Calculations show that sputter deposits from the mesh sides may limit the mesh numbers used to 100 or those of a wider pitch for both stationary and rotated samples. A correlation with published data for stationary samples and new data for rotated samples confirms the calculations. In practice, it is difficult, without a special holder, to have intimate contact between the grid and sample. Such a holder is described. Further calculations concerning the shadowed profiles at the grid bar regions show that the grids may lift off the sample surface by 4–16 µm. This leads to non‐vertical crater walls in each mesh aperture. This effect, however, does not change the above conclusion on the mesh sizes to be used. In this range, the spurious appearance of Auger electrons emitted from the grid material is calculated to be less than 1%. This conclusion applies to the meshes evaluated here, which range in thickness from 13 to 29 µm. Thinner meshes may lead to the applicability of proportionately closer meshed grids in sputter‐profiling applications. Copyright © 2006 John Wiley & Sons, Ltd. The contribution of Martin P. Seah of the National Physical Laboratory is published with the permission of the Controller of HMSO and the Queen's Printer for Scotland.     

Observations on X‐ray enhanced sputter rates in argon cluster ion sputter depth profiling of polymers

Traditionally polymer depth profiling by X‐ray photoelectron spectroscopy (XPS) has been dominated by the damage introduced by the ion beam rather than the X‐rays. With the introduction of polyatomic and especially argon gas cluster ion‐beam (GCIB) sources for XPS instruments, this is no longer the case, and either source of damage may be important (or dominate) under particular conditions. Importantly, while ion‐beam damage is a near‐surface effect, X‐ray damage may extend micrometres into the bulk of the sample, so that the accumulation of X‐ray damage during long depth profiles may be very significant. We have observed craters of similar dimensions to the X‐ray spot well within the perimeter of sputter craters, indicating that X‐rays can assist GCIB sputtering very significantly. We have measured experimentally sputter craters in 13 different polymers. The results show that X‐ray exposure can introduce much more topography than might previously have been expected, through both thermal and direct X‐ray degradation. This can increase the depth of a crater by a remarkable factor, up to three in the case of poly‐L‐lactic acid and polychlorotrifluorothylene under reasonably normal XPS conditions. This may be a major source of the loss of depth resolution in sputter depth profiles of polymers. Copyright © 2012 John Wiley & Sons, Ltd.     

A new approach to express ToF SIMS depth profiling

We propose a new approach to express SIMS depth profiling on a TOF.SIMS‐5 time‐of‐flight mass spectrometer. The approach is based on the instrument capability to independently perform raster scans of sputter and probe ion beams. The probed area can be much smaller than the diameter of a sputter ion beam, like in the AES depth profiling method. This circumstance alleviates limitations on the sputter beam–raster size relation, which are critical in other types of SIMS, and enables analysis on a curved‐bottomed sputter crater. By considerably reducing the raster size, it is possible to increase the depth profiling speed by an order of magnitude without radically degrading the depth resolution. A technique is proposed for successive improvement of depth resolution through profile recovery with account for the developing curvature of the sputtered crater bottom in the probed area. Experimental study of the crater bottom form resulted in implementing a method to include contribution of the instrumental artifacts in a nonstationary depth resolution function within the Hofmann's mixing–roughness–information depth model. The real‐structure experiment has shown that the analysis technique combining reduction of a raster size with a successive nonstationary recovery ensures high speed of profiling at ~100 µm/h while maintaining the depth resolution of about 30 nm at a 5 µm depth. Copyright © 2015 John Wiley & Sons, Ltd.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

TOF-SIMS investigations on weathered silver surfaces

Silver-coated quartz crystal microbalance (QCM) disks were treated under different environmental conditions (including changes in parameters such as relative humidity (%RH) and SO₂/H₂S content) in atmospheres of synthetic air and pure N₂ for 24 h in a weathering chamber. The corroded surfaces were subjected to depth profiling by a time of flight (TOF) secondary ion mass spectrometry (SIMS) instrument, equipped with a Bi⁺ analysis gun and Cs⁺ sputter gun. The evaluation of the in-depth distribution of several elements and species provides evidence for the formation of a corrosion layer containing Ag₂SO₃, even in the absence of oxidizing agents, such as H₂O₂ or NO₂. Furthermore it could be elucidated that the thickness of the formed Ag₂SO₃ layer does not depend on the SO₂ concentration but rather on the humidity and oxygen content of the ambient atmosphere. In weathering experiments in atmospheres composed of synthetic air, humidity, and H₂S, the presence of different oxygen species (surface and bulk) and silver sulfide could be detected by TOF-SIMS depth profiling experiments. The obtained results for both acidifying gases are in good correlation with the corresponding tapping mode atomic force microscopy (TM-AFM) investigations and in situ QCM measurements.     

Investigation of the depth‐profiling capabilities of the Storing Matter technique

The so‐called Storing Matter technique allows the matrix effect observed in secondary ion mass spectrometry to be successfully circumvented. We therefore investigate in this work the depth‐profiling capabilities of the Storing Matter technique with a goal of developing protocols for quantitative depth profiles. The effect of the steps involved in the Storing Matter process on the main parameters such as the depth resolution and the dynamic range is studied experimentally and by simulations. A semi‐automated process consisting of the sputter‐deposition process on a rotating collector in the Storing Matter instrument followed by a complete analysis of the collector by secondary ion mass spectrometry is defined. This protocol is applied to depth profile a B implant in Si and a Sn/Zn multilayered sample, and the results are compared with those obtained with conventional secondary ion mass spectrometry. Copyright © 2015 John Wiley & Sons, Ltd.     

Surface transient effects in ultralow‐energy O2+ sputtering of silicon

It is known that by lowering the impact energy the sputter rate and surface transient width in SIMS will be reduced. However, few studies have been done at ultralow energies over a wide range of impact angles. This study examines the dependence of sputter rate and transient width as a function of O₂⁺ primary ion energy (E_p = 250 eV, 500 eV and 1 keV) and incidence angles of 0–70°. The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta‐layers of Si_0.7Ge_0.3. We observed that the lowest transient width of 0.7 nm is obtainable at normal and near‐normal incidence with E_p ～ 250 eV and E_p ～ 500 eV. There is no significant improvement in transient width going down in energy from E_p ～ 500 to ～250 eV. The onset of roughening is also not obvious at E_p ～ 250 eV over the whole angular range studied. Although the sputter rate during the surface transient is normally different from that at steady state, only at E_p ～ 250 eV was it observed that the sputter rate remained fairly independent of depth. We conclude that the best working ranges to achieve a narrow transient width and accurate depth calibration are at E_p ～ 250 eV/0° < θ < 20°and 500 eV/0°< θ < 10°. Copyright © 2005 John Wiley & Sons, Ltd.     

Determination of an accurate depth distribution of sodium, calcium and aluminium in thin oxide layers using several methods

Summary Experience in obtaining accurate sodium, calcium and aluminium profiles in silicon dioxide using SIMS and Auger depth profiling is reported. With the knowledge of implantation energy and ion dose, it is possible to calculate and to realize well defined implantation profiles in special substrates with high accuracy. The technological demand is to measure this so called accurate profiles in implanted structures without alteration by the measurement. SIMS and Auger profiling have been tested in special applications to study the influence of ion sputtering on the depth distribution in membranes and to obtain accurate profiles. Experimental results are presented for the application of Auger profiling at sample edges and SIMS profiling using negative ions. In the case of Auger profiling a transformation routine was developed for using linescan and sputter profile results in combination.     

Surface transient effects in ultralow‐energy Cs+ sputtering of Si

This study examines the dependence of the sputter rate and the transient width (z_tr) as a function of Cs⁺ primary ion energy (impact energy (E_p) = 320 eV, 500 eV and 1 keV) and incident angles between 0 and 70° . The instrument used was the ATOMIKA 4500 SIMS depth profiler and the sample was Si with ten delta layers of Si_0.7 Ge_0.3. We observed the narrowest transient widths of between 1.4 and 2.0 nm apparent depth. This was achieved at incident angles (θ) of 30–50° . An extended transient effect was observed when profiled at θ > 50° . Below this incident angle, the transient width is less than twice the penetration depth (z_tr < 2R_norm). At minimum z_tr, z_tr ≈ R_norm. The detection sensitivity is best achieved at θ ≈ 30° for all energies investigated. The sputter rate is lowest at normal incidence, rising gradually to a maximum at θ ≈ 50–60° . This is similar to that observed with ultralow‐energy O₂⁺ primary ion beams. 1 At ultralow energies, reducing E_p does not have a significant effect in reducing z_tr. We conclude that for E_p < 1 keV, the optimum condition to achieve minimum z_tr while maintaining good sensitivity and high sputter rate is at θ ≈ 30° . Copyright © 2007 John Wiley & Sons, Ltd.     

Sputter-induced cross-contamination in analytical AES and XPS instrumentation: utilization of the effect for the in situ deposition of ultrathin functional layers

Cross-contamination is observed on sample surfaces by Auger electron spectroscopy and X-ray photoelectron spectroscopy if multiple samples are mounted on one sample holder and a neighbouring sample was sputter depth profiling. During sputter depth profiling, sputtered material is deposited on inner surfaces of the instrument. In a secondary sputter process, which is due to species leaving the primary sputter target with higher kinetic energy, the previously deposited material is transported from the inner surfaces to the other samples mounted on the sample holder. This reflective sputtering is utilized to deposit ultrathin layers on sample surfaces for X-ray photoelectron spectroscopy binding energy referencing purposes and to build up ultrathin conductive layers to make possible Auger electron spectroscopy measurements on insulating samples.     

Removal of Ar+ beam‐induced damaged layers from polyimide surfaces with argon gas cluster ion beams

An Ar Gas Cluster Ion Beam (GCIB) has been shown to remove previous Ar⁺ ion beam‐induced surface damage to a bulk polyimide (PI) film. After removal of the damaged layer with a GCIB sputter source, XPS measurements show minor changes to the carbon, nitrogen and oxygen atomic concentrations relative to the original elemental bulk concentrations. The GCIB sputter depth profiles showed that there is a linear relationship between the Ar⁺ ion beam voltage within the range from 0.5 to 4.0 keV and the dose of argon cluster ions required to remove the damaged layer. The rate of recovery of the original PI atomic composition as a function of GCIB sputtering is similar for carbon, nitrogen and oxygen, indicating that there was no preferential sputtering for these elements. The XPS chemical state analysis of the N 1s spectra after GCIB sputtering revealed a 17% damage ratio of altered nitrogen chemical state species. Further optimization of the GCIB sputtering conditions should lead to lower nitrogen damage ratios with the elemental concentrations closer to those of bulk PI. Copyright © 2010 John Wiley & Sons, Ltd.     

Secondary ion mass spectrometry depth profiling of ultrathick films using an argon gas cluster source: Crater shape implications on the analysis area as a function of depth

Argon cluster ions have enabled molecular depth profiling to unprecedented depths, with minimal loss of chemical information or changes in sputter rate. However, depth profiling of ultrathick films (>100 μm) using a commercial ion source oriented at 45° to the surface causes the crater bottom to shrink in size because of a combination of the crater wall angle, sputter rate differences along the trailing-edge crater wall, and undercutting on the leading-edge. The shrinking of the crater bottom has 2 immediate effects on dual-beam depth profiling: first is that the centering of the analysis beam inside the sputter crater will no longer ensure the best quality depth profile because the location of the flat crater bottom progressively shifts toward the leading-edge and second, the shifting of the crater bottom enforces a maximum thickness of the film that could be depth profiled. Experiments demonstrate that a time-of-flight secondary ion mass spectrometry instrument equipped with a 20 keV argon cluster source is limited to depth profiling a 180 μm-thick film when a 500 μm sputter raster is used and a 100 μm square crater bottom is to be left for analysis. In addition, depth profiling of a multilayer film revealed that the depth resolution degrades on trailing-edge side of the crater bottom presumably because of the redeposition of the sputtered flux from the crater wall onto the crater bottom.     

Determination of diffusion induced concentration profiles in Cr2O3 films on ceramic Al2O3 by Auger sputter depth profiling

Annealing induced interface and bulk effects in thin Cr₂O₃ films on aluminum oxide have been studied. The investigated samples have been prepared by reactive r.f. magnetron sputter deposition of Cr₂O₃ on ceramic Al₂O₃ substrates. Annealing at temperatures up to 1250° C have been carried out in situ under ultra high vacuum. Temperature induced compositional changes have been subsequently determined by AES sputter depth profiling without breaking the vacuum. The non-conducting substrates and the overlap of the Cr-(LMM)- and O-(KLL)-Auger peaks required special analysis parameters and spectra interpretation to obtain the concentration depth profiles of the different elements (Al, O, Cr).     

Determination of diffusion induced concentration profiles in Cr2O3 films on ceramic Al2O3 by Auger sputter depth profiling

Annealing induced interface and bulk effects in thin Cr₂O₃ films on aluminum oxide have been studied. The investigated samples have been prepared by reactive r.f. magnetron sputter deposition of Cr₂O₃ on ceramic Al₂O₃ substrates. Annealing at temperatures up to 1250° C have been carried out in situ under ultra high vacuum. Temperature induced compositional changes have been subsequently determined by AES sputter depth profiling without breaking the vacuum. The non-conducting substrates and the overlap of the Cr-(LMM)- and O-(KLL)-Auger peaks required special analysis parameters and spectra interpretation to obtain the concentration depth profiles of the different elements (Al, O, Cr).     

SIMS investigation of CrN sputtercoatings

Chromium nitride layers produced by reactive sputtering with different process parameters were characterized with EPMA, SIMS depth profiling, and three-dimensional SIMS imaging. EPMA results are used to quantify the major components of the films while SIMS is used to gather information about the distribution of the elements chromium, silicon, nitrogen, and oxygen. For all measurements a Cs+ primary ion beam was applied to sputter the sample. Positive MCs+ (M represents the element to be analyzed) secondary ions were detected. SIMS depth profiling shows an even distribution of all major elements except oxygen, which shows significant differences in concentration and distribution depending on the process parameters. CrN layers produced at low sputter power have much higher concentration of oxygen than layers produced with high sputter power. Heating the silicon substrate during the process results in an enrichment of oxygen at the interface.     

Use of C60 cluster projectiles for sputter depth profiling of polycrystalline metals

We have investigated the merits of fullerene cluster ions as projectiles in time‐of‐flight secondary neutral mass spectrometry (ToF‐SNMS) sputter depth profiling of an Ni:Cr multilayer sample similar to the corresponding NIST depth profiling standard. It is shown that sputter erosion under bombardment with C₆₀⁺ ions of kinetic energies between 10 and 20 keV provides good depth resolution corresponding to interface widths of several nanometres. This depth resolution is maintained during the complete removal of the multilayer stack with a total thickness of 500 nm. This finding is in contrast to the case where atomic Ga⁺ projectile ions of comparable kinetic energy are used, demonstrating the unique features of cluster projectiles in sputter depth profiling. Copyright © 2004 John Wiley & Sons, Ltd.