Characterization of Plasma-Polymerized 4-vinyl Pyridine with Silver Nanoparticles on Poly(ethylene terephthalate) Film for Anti-Microbial Properties

4-vinyl pyridine was polymerized on poly(ethylene terephthalate) (PET) film by using lower energy pulsed AC plasma under low pressure in Ar atmosphere. The plasma polymerized coating was characterized by ATR Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Different thicknesses of poly(4-vinyl pyridine) coating under different plasma polymerization conditions were studied. Silver nanoparticles with diameter around 50nm deposit were precipitated on the poly(4-vinyl pyridine) coating by UV irradiation in Silver nitride water solution, in order to enhance the anti-microbial properties. Different kinds of modified PET films were tested for anti-microbial properties against yeast (Debaryomyces hansenii) by using microbiological analyser µ-4200 and direct microscopic count method.     

Review on the thickness measurement of ultrathin oxide films by mutual calibration method

Mutual calibration was suggested as a method to determine the absolute thickness of ultrathin oxide films. It was motivated from the large offset values in the reported thicknesses in the Consultative Committee for Amount of Substance (CCQM) pilot study P-38 for the thickness measurement of SiO₂ films on Si(100) and Si(111) substrates in 2004. Large offset values from 0.5 to 1.0 nm were reported in the thicknesses by ellipsometry, X-ray reflectometry (XRR), medium-energy ion scattering spectrometry (MEIS), Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), and transmission electron microscopy (TEM). However, the offset value for the thicknesses by X-ray photoelectron spectroscopy (XPS) was close to zero (−0.013 nm). From these results, the mutual calibration method was reported for the thickness measurement of SiO₂ films on Si(100) by combination of TEM and XPS. The mutual calibration method has been applied for the thickness measurements of hetero oxide films such as Al₂O₃ and HfO₂. Recently, the effect of surface contamination was reported to be critical to the thickness measurement of HfO₂ films by XPS. On the other hand, MEIS was proved to be a powerful zero offset method which is not affected by the surface contamination. As a result, the reference thicknesses in the CCQM pilot study P-190 for the thickness measurement of HfO₂ films on Si(100) substrate were determined by mutual calibration method from the average XRR data and MEIS analysis. Conclusively, the thicknesses of ultrathin oxide films can be traceably certified by mutual calibration method and most thickness measurement methods can be calibrated from the certified thicknesses.     

Novel Nanostructured Electrodes Obtained by Pyrolysis of Composite Polymeric Materials

In this work, we compare pyrolyzed carbon derived from the photoresist SU‐8 alone or in combination with polystyrene and poly(styrene)‐block‐poly(dimethylsiloxane) copolymer (PS‐b‐PDMS), to be used as novel materials for micro‐ and nanoelectrodes. The pyrolyzed carbon films are evaluated with scanning electron microscopy, thermal gravimetric analysis, X‐ray photoelectron spectroscopy, contact angle analysis, and Raman spectroscopy. Furthermore, the standard rate constant for electron transfer is determined from cyclic voltammograms and found to be lower for PS‐b‐PDMS compared to PS and SU‐8 films. This may be related to the lower carbon content of PS‐b‐PDMS, as well as to its higher microstructural disorder.     

气液界面法组装的Ni3(HITP)2电致变色薄膜及其性能

由于缺乏可控的成膜技术,三亚苯类金属有机框架(MOFs)材料的应用受到了限制。我们在气液界面组装了不同厚度的Ni₃(HITP)₂薄膜(HITP^3-=2,3,6,7,10,11-六亚氨基三亚苯),并将制备的薄膜转移到导电玻璃表面。利用X射线衍射(XRD)、场发射透射电子显微镜(FETEM)、场发射扫描电镜(FESEM)、X射线光电子能谱(XPS)和拉曼光谱对样品的晶体结构、微观形貌和元素组成进行表征,采用紫外可见分光光度计以及电化学工作站对Ni₃(HITP)₂薄膜的电化学和电致变色性能进行了研究和表征。结果表明,得益于Ni₃(HITP)₂电致变色薄膜的多孔结构和与电解液良好的接触,所得薄膜电极N-20具有较短的着色响应时间/褪色响应时间(0.6/0.7 s),且着色效率可达530 cm²·C^-1;而N-50具有较大的光调制范围(740 nm,70%)。     

Observation of surface contamination layer by X‐ray reflectometry (XRR) analyses

Ultra‐thin HfO₂ films of 3.5, 5.0, and 8.0 nm nominal thicknesses were prepared, respectively, on silicon substrates by using atomic layer deposition method. Through the analyses of X‐ray reflectometry (XRR), X‐ray photoelectron spectroscopy, and transmission electron microscopy for HfO₂ films with and without sample cleaning, the effects of surface contamination on XRR curve and film thickness were investigated, and contamination layer was observed and the thickness of the layer was determined. X‐ray photoelectron spectroscopy results indicated that the amount of surface contamination varied considerably because of the surface cleaning. XRR curve shapes and the positions of thickness fringes changed and the thickness from Fourier analyses of the curves were different for the same sample due to the different surface contamination. Contamination layer of about 1 nm thickness was observed by Fourier analysis of XRR curve. Simulation for XRR curve showed the best fit to data when contamination layer of about 1 nm thickness was considered, and the result was consistent with that of the Fourier analysis. Copyright © 2016 John Wiley & Sons, Ltd.     

Growth Kinetics of Silicon Carbide Film Prepared by Heating Polystyrene/Si（111）

SiC films were prepared by heating polystyrene/Si（111） in normal pressure argon atmosphere at different temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Fourier transform infrared absorption measurements. The thicknesses of SiC films were calculated from FTIR spectra. The growth kinetics of the growth process of SiC films were investigated as well. The thicknesses of the SiC films grown for 1 h with increasing growth temperatures have different trends in the three temperature ranges： increasing slowly （1200-1250 ℃）, increasing quickly （1250- 12.70 ℃）, and decreasing （1270-1300 ℃）. The apparent activation energies of the growth process of SiC films in the three ranges were calculated to be 122.5,522.5, and -127.5 J/mol respectively. Mechanisms of the different growth processes were discussed. The relation between film thicknesses and growth temperatures indicated that the growth process was a 2D mechanism in the first range and 3D mechanism in the second range. In the third range, the thicknesses of SiC films were decreased by the volatility of Si and C atoms.     

Properties and characterization of hydrophobized microfibrillated cellulose

Microfibrillated cellulose (MFC) obtained by disintegration of bleached softwood sulphite pulp in a homogenizer, was hydrophobically modified by surface silylation with chlorodimethyl isopropylsilane (CDMIPS). The silylated MFC was characterized by Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM), transmission electron spectroscopy (TEM), X-ray photoelectron spectroscopy (XPS) and white light interferometry (WLI). The degree of surface substitution (DSS) was determined using Si concentrations from XPS survey scans, as well as deconvoluted peaks in high-resolution C1s XPS spectra. The DSS values obtained by the two methods were found to be in good agreement. MFC with DSS between 0.6 and 1 could be dispersed in a non-flocculating manner into non-polar solvents, TEM observations showing that the material had kept its initial morphological integrity. However, when CDMIPS in excess of 5 mol CDMIPS/glucose unit in the MFC was used, partial solubilization of the MFC occurred, resulting in a drop in the observed DSS and a loss of the microfibrillar character of the material. The wetting properties of films cast from suspension of the silylated MFC were also investigated. The contact angles of water on the films increased with increasing DSS of the MFC, approaching the contact angles observed on super hydrophobic surfaces for the MFC with the highest degree of substitution. This is believed to originate from a combination of low surface energy and surface microstructure in the films.     

Effective attenuation lengths for photoelectrons in thin films of silicon oxynitride and hafnium oxynitride on silicon

We have used the National Institute of Standards and Technology Database for the Simulation of Electron Spectra for Surface Analysis (SESSA) to simulate photoelectron intensities for thin films of SiO_1.6N_0.4 and HfO_1.9N_0.1 on silicon with excitation by Al Kα X‐rays. We considered Si 2p_3/2 photoelectrons from SiO_1.6N_0.4 and the substrate and Hf 4f_7/2 photoelectrons from HfO_1.9N_0.1. The simulations were performed for ranges of film thicknesses and photoelectron emission angles and for two common configurations for X‐ray photoelectron spectroscopy (XPS), the sample‐tilting configuration and the Theta Probe configuration. We determined photoelectron effective attenuation lengths (EALs) by two methods, one by analyzing photoelectron intensities as a function of film thickness for each emission angle (Method 1) and the other by analyzing photoelectron intensities as a function of emission angle for each film thickness (Method 2). Our analyses were made with simple expressions that had been derived with the assumption that elastic‐scattering effects were negligible. We found that EALs from both methods were systematically larger for the Theta Probe configuration, by amounts varying between 1% and 5%, than those for the sample‐tilting configuration. These differences were attributed to anisotropy effects in the photoionization cross section that are expected to occur in the former configuration. Generally, similar EALs were found by each method for each film material although larger EALs were found from Method 2 for film thicknesses less than 1.5 nm. SESSA is a useful tool for showing how elastic scattering of photoelectrons modifies EALs for particular materials, film thicknesses, and XPS configurations. Copyright © 2012 John Wiley & Sons, Ltd.     

Identification of defect sites on oxide surfaces by metastable impact electron spectroscopy

In this review, thin films of SiO₂ on Mo(1 1 2) and MgO(1 0 0) on Mo(1 0 0) have been characterized using metastable impact electron and ultraviolet photoelectron spectroscopies (metastable impact electron spectroscopy (MIES) and ultraviolet photoelectron spectroscopy). The electronic and chemical properties of the thin films are identical to those of the corresponding bulk oxides. For different prepared defective SiO₂ surfaces, additional features are observed in the band-gap region. These features arise from vacancies or excess oxygen and are consistent with theoretical predictions of additional occupied states in the band-gap due to point defects. Extended defect sites on SiO₂ and MgO are identified using MIES by a narrowing of the O(2p) features with a reduction in the density of extended defect sites. MIES of adsorbed Xe (MAX) is also used to estimate the density of extended defect sites. Furthermore, it is shown that CO is an appropriate probe molecule for estimating the defect density of MgO surfaces. Upon Ag exposure, the change in the work function of a low defect MgO(1 0 0) versus a high defect surface is markedly different. For a sputter-damaged MgO(1 0 0) surface, an initial decrease of the work function was found, implying that small Ag clusters on this surface are electron deficient. In contrast, for SiO₂ no significant change of the work function upon Ag exposure with increasing defect density was observed. On MgO(1 0 0), the presence of defect sites markedly alter the electronic and chemical properties of supported Ag clusters. Such a strong influence of defect sites was not found for Ag clusters on SiO₂.     

Physical and chemical properties of silicon carbonitride nanocrystalline films

Nanocrystalline transparent films SiC_xN_y were obtained by plasma-enhanced chemical deposition within the temperature range 473–1173 K from low pressure gas phase from a mixture of hexamethyldisilazane vapor, ammonia, and helium. Physical chemical properties of the films obtained were studied by IR and Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy, scanning electron microscopy, high resolution transmission electron spectroscopy and synchrotron radiation powder diffaction. Voltage-capacity and voltage-current measurements were also made. The dependence of chemical and phase composition of the films on deposition conditions was determined, and the formation of approximately 2 nm sized spherical nanocrystals within the films was established. The nanocrystals are formed by a phase similar to usual α-Si₃N₄, with silicon atoms partially substituted by carbon ones.     

Synthesis of some azacrown derivatives and fabrication of their nanofilms on the glassy carbon surface

The modification of N-phenyl-aza-15-crown-5 (PA15C5) and N-(4-aminophenyl)-aza-15-crown-5 (4APA15C5) on glassy carbon (GC) electrode was performed by the electrochemical oxidation of the corresponding azacrown derivatives in anhydrous acetonitrile media. The electrochemical behavior of the resulting modified GC electrode was investigated in the presence of electroactive redox probes and these results, together with the X-ray photoelectron spectroscopy (XPS) and reflection-absorption infrared spectroscopy were used to confirm the attachment of these molecules onto the GC surface. The ellipsometric thicknesses of PA15C5 and 4APA15C5 films at the GC surface was obtained around 9.28 ± 0.40 and 10.50 ± 1.10 nm, respectively. Azacrown modified nanoscale surfaces serve as alkali metal sensor specific for their cavity in the crown ring.     

Effect of annealing on the supercapacitor performance of CuO-PAA/CNT films

We report the synthesis of CuO-poly(acrylic) acid/CNT hybrid thin films by a cost-effective spin-coating technique for supercapacitor application. Hybrid films were annealed at 300, 400, and 500 °C to study its effect on the supercapacitor behavior. X-ray photoelectron spectroscopy and Fourier transform-infrared spectroscopy techniques were used for the phase identification and determination of the organic component in the hybrid films, respectively. Surface morphology of the films was examined by scanning electron microscopy and revealed the novel ring-like structures. The average diameter of the ring changes from 0.5 to 1.2 μm with increase in annealing temperature. Cyclic voltammetry is employed to estimate the specific capacitance (C _sp) of the films in 1 M H₂SO₄ electrolyte. It is observed that the C _sp increases from 188 to 258 Fg⁻¹ with increase in annealing temperature.     

Preparation and characterization of thin TiO2-films on gold/mica

Flat and highly (111) oriented gold and silver films were prepared by physical vapour deposition (PVD) using optimized deposition parameters. On these films, which were characterized with atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), titanium dioxide films were deposited by electron beam evaporation and dip coating. Dip coating from titanium tetraisopropoxide solutions resulted in films with different morphology and coverage depending on the alkoxide concentration (0.009 mol/L – 0.60 mol/L) and the post-treatment. Scanning electron microscopy (SEM) and AFM revealed that the deposited TiO₂ consists of amorphous, highly porous islands when the applied alkoxide concentration is high (0.05 mol/L – 0.6 mol/L). At higher temperatures these amorphous TiO₂ islands sintered significantly and crystallized to anatase. In contrast, transparent TiO₂ films were obtained from low concentrated alkoxide solutions (< 0.01 mol/L) which covered the whole substrate, similar to electron beam evaporated thin films. Sputter profiles with ion scattering spectroscopy (ISS) indicated that the film thickness is in the range of 2 nm when alkoxide solutions with a concentration of 9 mmol/L are used. The deposition of TiO₂ by electron beam evaporation normally resulted in significantly reduced TiO₂ films, completely oxidized ones were obtained when deposition was performed at elevated oxygen partial pressures (p(O₂) > 2 × 10^–5 mbar).     

Interaction of O2, CO and CO2 with Co films

Metastable impact electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS(HeI)) and x‐ray photoelectron spectroscopy (XPS) were applied to study the interaction of O₂, CO and CO₂ with Co films at room temperature. The films were produced on Si(100) surfaces under the in situ control of MIES, UPS and scanning tunnelling microscopy (STM). For O₂, dissociative adsorption takes place initially and then incorporation of oxygen starts at exposures of ～5 L. Comparison of the MIES and UPS spectra with those published for CoO shows that near‐stoichiometric CoO films can be obtained by co‐deposition of Co and O₂. The CO is adsorbed molecularly up to a maximum coverage of ～0.6 monolayer, with the C‐end pointing towards the surface. The CO₂ adsorption is dissociative, resulting in the formation of Co–CO bonds at the surface. The resulting oxygen atoms are mostly incorporated into the Co layer. For all studied molecules the interaction with Co is similar to that with Ni. Copyright © 2005 John Wiley & Sons, Ltd.     

Thickness dependence of the structural,mechanical and electrical properties of Ni films deposited on polyimide by ion beam‐assisted deposition (IBAD)

Ni thin films with different thicknesses were deposited on pre‐treated polyimide substrates by ion beam‐assisted deposition. Dependence of structural, mechanical and electrical properties of the Ni films on their thickness was investigated. The results showed a clear correlation between film properties and film thickness. The inter‐diffusion at the interface regions of the films with different deposition time were demonstrated by transmission electron microscopy and X‐ray photoelectron spectroscopy. With increasing film thickness, surface roughness of the Ni films firstly decreased and then increased, while the grain size gradually increased. Residual stress of the Ni thin films decreased with increasing Ni film thickness up to 202 nm and then slightly increased as the film thickness further increased. Resistivity decreased, and temperature coefficient of resistivity (TCR) increased with increasing film thickness due to the enhancement of crystallization degree and the increase in grain size. The decrease in surface roughness and residual stress also contributed to the decrease of resistivity and the increase of TCR of the films. An optimal film thickness is suggested, which yielded a relatively high TCR value and low levels of both surface roughness and residual stress. Copyright © 2012 John Wiley & Sons, Ltd.     

Transition metal ion-substituted polyoxometalates entrapped in polypyrrole as an electrochemical sensor for hydrogen peroxide

A conducting polymer was used for the immobilization of various transition metal ion-substituted Dawson-type polyoxometalates (POMs) onto glassy carbon electrodes. Voltammetric responses of films of different thicknesses were stable within the pH domain 2-7 and reveal redox processes associated with the conducting polymer, the entrapped POMs and incorporated metal ions. The resulting POM doped polypyrrole films were found to be extremely stable towards redox switching between the various redox states associated with the incorporated POM. An amperometric sensor for hydrogen peroxide detection based upon the POM doped polymer films was investigated. The detection limits were 0.3 and 0.6 μM, for the Cu(2+)- and Fe(3+)-substituted POM-doped polypyrrole films respectively, with a linear region from 0.1 up to 2 mM H(2)O(2). Surface characterization of the polymer films was carried out using atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy.     

Immobilization of Tris-(8-hydroxyquinoline) aluminum onto P4VP polymer thin films by UV irradiation cross-linking

We report a novel method for the immobilization of Tris-(8-hydroxyquinoline) aluminum (Alq₃) onto poly(4-vinylpyridine) (P4VP) thin polymer films by UV irradiation cross-linking. The polymer films were prepared by spin-coating of P4VP onto cleaned silicon wafer surface followed by UV irradiation. The thicknesses of the polymer thin films were measured by ellipsometry with different irradiation times. The immobilization of Alq₃, orientation and the surface activity were followed using photoluminescence and UV-visible spectroscopy. The surface morphology was investigated by using field emission scanning electron microscopy and atomic force microscopy. Patterning of Alq₃ on P4VP film was obtained using photolithography technique. Our experimental results show that the cross-linked P4VP thin film is a universal surface modifier.     

Low‐Energy Electron‐Induced Transformations in Organolead Halide Perovskite

Methylammonium lead iodide perovskite (MAPbI₃), a prototype material for potentially high‐efficient and low‐cost organic–inorganic hybrid perovskite solar cells, has been investigated intensively in recent years. A study of low‐energy electron‐induced transformations in MAPbI₃ is presented, performed by combining controlled electron‐impact irradiation with X‐ray photoelectron spectroscopy and scanning electron microscopy. Changes were observed in both the elemental composition and the morphology of irradiated MAPbI₃ thin films as a function of the electron fluence for incident energies from 4.5 to 60 eV. The results show that low‐energy electrons can affect structural and chemical properties of MAPbI₃. It is proposed that the transformations are triggered by the interactions with the organic part of the material (methylammonium), resulting in the MAPbI₃ decomposition and aggregation of the hydrocarbon layer.     

Growth of cerium tungstate epitaxial layers: influence of temperature

Thin films of cerium tungstate prepared in situ by cerium deposition in oxygen atmosphere onto the W(100) single‐crystal were investigated by means of photoelectron spectroscopy and low‐energy electron diffraction (LEED). The studied temperature range was 173–1073 K. It was found that the temperature necessary for the oriented growth of Ce₆WO₁₂(100) was 673 K, and at higher temperatures, the LEED pattern improved. Photoemission data revealed the partial formation of CeO₂ on the surface at preparation temperatures below 473 K due to limited diffusion of tungsten atoms from the substrate. Copyright © 2015 John Wiley & Sons, Ltd.     

Study of Thin Oxide Films by Electron, Ion and Synchrotron Radiation Beams

 Titanium oxide and zirconium oxide thin films deposited on silicon substrates were characterised using electron probe microanalysis (EPMA), Rutherford backscattering spectroscopy (RBS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning photoelectron microscopy (SPEM). The composition and mass thickness of the films were determined and the results of different methods compared. It was revealed that the synchrotron radiation used for SPEM studies caused considerable modification of zirconia films grown at low temperatures.