The effect of tungsten coating on the properties of diamond thick films

According to the physical properties of pure tungsten and tantalum and their carbides, a layer of tungsten thin films coating three tantalum filaments at a current of 750 A was prepared by us for the first time and called tungsten coating. Diamond thick films were deposited in a hot filament chemical vapor deposition (HFCVD) reactor using tantalum filaments before and after tungsten coating, respectively. The success of tungsten coating is verified by scanning electron microscopy examination of these filaments. The remarkable discrepancies in thermal conductivity, colors of diamond thick films, and electron dispersion spectroscopy of the films substantiate the success of tungsten coating, too. The effects of tungsten coating on the quality of diamond films were finally evaluated by Raman spectra. The text was submitted by the authors in English.     

Buried interfacial layer of highly oriented molecules in copper phthalocyanine thin films on polycrystalline gold

The growth of copper phthalocyanine thin films evaporated on polycrystalline gold is examined in detail using near edge x-ray absorption fine structure spectroscopy and surface sensitive x-ray photoemission spectroscopy. The combination of both methods allows distinguishing between the uppermost layers and buried interface layers in films up to approximately 3 nm thickness. An interfacial layer of approximately 3 ML of molecules with an orientation parallel to the substrate surface was found, whereas the subsequent molecules are perpendicular to the metal surface. It was shown that even if the preferred molecular orientation in thin films is perpendicular, the buried interfacial layer can be oriented differently.     

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Nanocrystalline tantalum nitride (TaN) thin films have been deposited by reactive direct current magnetron sputtering technique on Si/SiO₂ (100) substrate with nitrogen flow rate ranging from 0, 3, 5, 7, 9 to 11 standard cubic centimeter per minute (sccm). Structural properties, surface morphology, chemical composition and and resistivity of the TaN films were investigated by X‐ray diffraction (XRD), field emission scanning electron microscopy, X‐ray photoemission spectroscopy (XPS) and four‐point probe measurements, respectively. In the XRD spectra, a classical formation sequence of tantalum nitride phases in the order of Ta‐Ta₂N‐TaN‐Ta₄N₅ and decreasing amount of metallic Ta were observed with increasing nitrogen flow. The electrical resistivity of the TaN film was found to increase with increasing N/Ta ratio as a result of the increased electron scattering from interstitial N atoms. In the XPS analysis, two groups of Ta4f doublets relating to different TaN phases were observed in the core level spectra of TaN films. No strong coupling was observed between the Ta4f doublets and the Ta4p and the N1s groups. The appropriate nitrogen flow was believed to be helpful in the bonding and formation of stoichiometric TaN. Copyright © 2014 John Wiley & Sons, Ltd.     

Alkaline fuel cells: Calculating and comparing overall currents of hydrophobized cathodes with thin regular-structure and thick stochastic-structure active layers

A concept of active hydrophobized active layers with regular structure is introduced. In these layers, a hydrophobizer takes part in the development of gas pores representing a set of straight identical rods (cylinders) uniformly distributed over the active layer and extended in a direction perpendicular to the cathode surface. An advantage of cathodes with a thin regular-structure active layer is the reproducibility of their characteristics and a low content of platinum catalyst (up to tenth and even hundredth fractions of mg/cm²). A comparison of current characteristics of thin (with the thickness of several tens of μm) active layers with a regular structure and thick (with the thickness of several hundreds of μm) with the stochastic distribution of the hydrophobizer (with randomly distributed polytetrafluoroethylene) is made. For a fuel cell with an alkaline electrolyte (7 M KOH at 60°C), calculations show that at potentials below 0.5 V (RHE), the cathodes with thin regularstructure active layers demonstrate higher overall currents as compared with cathodes covered with thick active layers with a stochastic structure. However, the opposite trend is observed at potentials above 0.5 V. To increase the current in cathodes with thin regular-structure active layers, it is possible to, first, increase the active layer thickness and, second, decrease the size of hydrophobizer grains in them.     

Density and Young’s modulus of thin TiO2 films

Densities, ρ, of thin TiO₂ layers, produced by reactive evaporation (RE) and ion plating (IP) have been analyzed by means of grazing incidence X-ray reflectometry (GIXR). Depending on the deposition conditions, the layers are amorphous or polycrystalline, with densities between 2.9 g/cm³ and 3.9 g/cm³. Young’s moduli, E, have been analyzed for 280 nm and 500 nm thick layers by means of surface acoustic wave spectroscopy (SAWS) and vary between 65 GPa for RE films and 147 GPa for IP layers. The values are independent of film thickness, but correlate with the density. A phase transition of the TiO₂ films from the amorphous state to anatase occurs at temperatures above 210°C and increases the Young’s modulus significantly, whereas the density remains unchanged.     

Study of the Interface Microstructures of CVD Diamond Films by TEM

 The characteristics of the interface microstructures between a CVD diamond film and the silicon substrate have been studied by transmission electron microscopy and electron energy loss spectroscopy. The investigations are performed on plan-view TEM specimens which were intentionally thinned only from the film surface side allowing the overall microstructural features of the interface to be studied. A prominent interfacial layer with amorphous-like features has been directly observed for CVD diamond films that shows a highly twinned defective diamond surface morphology. Similar interfacial layers have also been observed on films with a <100> growth texture but having the {100} crystal faces randomly oriented on the silicon substrate. These interfacial layers have been unambiguously identified as diamond phase carbon by both electron diffraction and electron energy loss spectroscopy. For the CVD diamond films that exhibit heteroepitaxial growth features, with the {100} crystal faces aligned crystallographically on the silicon substrate, such an interfacial layer was not observed. This is consistent with the expectation that the epitaxial growth of CVD diamond films requires diamond crystals to directly nucleate and grow on the substrate surface or on an epitaxial interface layer that has a small lattice misfit to both the substrate and the thin film material.     

Electron Transmission Through Thin Organized Organic Films

The interaction between electrons and organized organic thin films was investigated by measuring the energy distribution of photoelectrons injected from a thin silver film coated with thin organic layers. Electrons with energy above ∽0.8 eV were transmitted ballistically through an organic layer that contains up to five monolayers, each ∽2 nm thick. Elastic scattering processes contribute significantly to the electron energy distribution only for thicker layers. The transmission of low-energy electrons is controlled mainly by an electrostatic barrier perpendicular to the surface. A signature of a band structure in the organic layer was observed when the electrons were transmitted through 13 layers. © 1997 by John Wiley & Sons, Ltd.     

A thin film analog of the corneal mucus layer of the tear film: an enigmatic long range non-classical DLVO interaction in the breakup of thin polymer films

We present experimental results on the instability and dewetting of thin liquid polydimethylsiloxane (PDMS) films intercalated between an aqueous medium and a silicon wafer grafted with PDMS ‘brushes’. This is a thin film analog of the precorneal thin mucus coating sandwiched between the aqueous tear film and the glycocalyx carrying corneal epithelial surface. Lowering of the PDMS–water interfacial tension by a surfactant results in dewetting even of micrometer thick films within a few minutes. The instability appears to be induced by a long range non-classical DLVO force which has the same decay behavior as the nonretarded van der Waals force, but a magnitude which is about 2–3 orders higher. Implications for the breakup of the precorneal mucus layer and the tear film are discussed.     

Formation of PPy/Ta2O5/Ta structure by electropolymerization

Electropolymerization of pyrrole on tantalum (Ta) electrodes was carried out in buffer solutions (0.04 M phosphoric acid, 0.04 M acetic acid, 0.04 M boric acid and 0.2 M sodium hydroxide) containing 0.1 M sodium ptoluenesulfonate (TsONa) under galvanostatic conditions and it was found that a polypyrrole (PPy) and a tantalum oxide (Ta₂O₅) layer are formed on a Ta electrode by an electrochemical oxidation process. The conditions of this simultaneous formation were studied in respect to current density (i_d), pyrrole concentration ([Py]), pH and the amount of electricity. Under certain conditions ([Py] = 0.25 M, pH = 1.8, i_d = 10–20 mA cm^?2, the amount of electricity = 1 C), 6–8 μm thick PPy films were efficiently formed on homogeneous 30–50 nm thick Ta₂O₅ layers. The PPy film showed a high electrical conductivity (110 s cm^?1), adhered well and covered the Ta₂O₅ layer. The resulting PPy/Ta₂O₅/Ta system is therefore proved to have excellent properties as a capacitor.     

Analysis of the composition of tantalum nitride in CMOS metallization trenches using parallel angle-resolved XPS

We demonstrate the utilization of parallel angle-resolved X-ray photoelectron spectroscopy (pAR-XPS) as a useful tool to analyze ultrathin sputtered tantalum nitride (TaN) thin films in complementary metal-oxide-semiconductor (CMOS) trenches. The chemical composition of TaN was estimated by pAR-XPS using a Theta 300i from Thermo Fischer. An improved lateral resolution was achieved by analyzing periodic structures. The XPS data was correlated with transmission electron microscopy (TEM) in combination with energy-dispersive X-ray spectroscopy (EDX) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) data. The results show that the nitrogen content in the TaN thin films was about 6% higher at the sidewall compared with the top and bottom of the trench.     

Ultrathin cobalt silicide film formation on Si(100)

The interfacial reaction between ultrathin Co film and substrate Si(100) was studied by in situ XPS using monochromatized Al Kα. When the Co is deposited on Si(100) at room temperature, CoSi₂ is formed during the initial stage of Co deposition and then metallic Co starts to grow sequentially. For 8 ML Co deposition on Si(100) the interfacial reaction layer is relatively thin compared with the pure Co overlayer, which is not involved in the interfacial reaction in depth. The Co layers change rapidly to CoSi layers after annealing at 270°C, and then CoSi₂ layers form after annealing at 540°C for 2 min. The CoSi₂ layers are changed to CoSi₂ islands by post‐annealing at >650°C. Copyright © 2003 John Wiley & Sons, Ltd.     

Effect of temperature on the photoalignment of azo dyes in thin films

The temperature dependences of the induced dichroic ratios (DRs) of azo dyes after their photoalignment in thin films 80 to 200 nm thick are studied. It is found that the DR values of layers containing dyes of the benzeneazodiphenyl series fall from 6.0 to 1.6 as the temperature rises from 60 to 130°C, respectively. A reduction in induced DR as the temperature rises (from 20 to 100°C) is also observed for the thin films of the dyes of benzeneazo-5,5’-dioxodibenzothiophene group. The absence of induced DR after irradiation with polarized light at 100°C indicates there is no alignment of molecules at this temperature.     

Interaction of CsF with multilayered water

The interaction of CsF with multilayered water has been investigated with metastable impact electron spectroscopy (MIES) and ultraviolet photoelectron spectroscopy with HeI (UPS(HeI)). We have studied the emission from the ionization of H2O states 1b1, 3a1, and 1b2; of Cs5p and of F2p. We have prepared CsF-H2O interfaces, namely, CsF layers on thin films of multilayered water and vice versa; they were annealed between 80 and about 280 K. Up to about 100 K, a closed CsF layer can be deposited on H2O and vice versa; no interpenetration of the two components H2O and CsF could be observed. Above 110 K, CsF (H2O) layers deposited on thin H2O (CsF) films (stoichiometry CsF.1.5H2O) gradually transform into a mixed layer containing F, Cs, and H2O species. When annealing, H2O molecules can be detected up to 200 K from the mixed F-Cs-H2O layer (while for pure H2O desorption is essentially complete at 165 K); a water network is not formed under these conditions, and all H2O molecules are involved in bonding with Cs+ and F- ions. When CsF is deposited at 120 K on sufficiently thick water multilayers, full solvation of both F and Cs takes place, even for the species closest to the surface, as long as the stoichiometry remains CsF.(H2O)n with n > 3.     

Effects of Charged Surfactants on Interfacial Water Structure and Macroscopic Properties of the Air-Water Interface

Surfactants are used to control the macroscopic properties of the air-water interface. However, the link between the surfactant molecular structure and the macroscopic properties remains unclear. Using sum-frequency generation spectroscopy and molecular dynamics simulations, two ionic surfactants (dodecyl trimethylammonium bromide, DTAB, and sodium dodecyl sulphate, SDS) with the same carbon chain lengths and charge magnitude (but different signs) of head groups interact and reorient interfacial water molecules differently. DTAB forms a thicker but sparser interfacial layer than SDS. It is due to the deep penetration into the adsorption zone of Br⁻ counterions compared to smaller Na⁺ ones, and also due to the flip-flop orientation of water molecules. SDS alters two distinctive interfacial water layers into a layer where H⁺ points to the air, forming strong hydrogen bonding with the sulphate headgroup. In contrast, only weaker dipole-dipole interactions with the DTAB headgroup are formed as they reorient water molecules with H⁺ point down to the aqueous phase. Hence, with more molecules adsorbed at the interface, SDS builds up a higher interfacial pressure than DTAB, producing lower surface tension and higher foam stability at a similar bulk concentration. Our findings offer improved knowledge for understanding various processes in the industry and nature.     

Homogeneous alignment of liquid crystals on low-temperature solution-derived gallium oxide films via IB irradiation method

In this paper, solution-derived gallium oxide (GaO) films are fabricated for the homogeneous alignment of liquid crystals (LCs) after an ion-beam (IB) irradiation process. GaO thin films are prepared under a variety of temperatures and different IB irradiation intensities, and the physicochemical performances of the fabricated GaO thin films are analysed using a UV-vis spectrometer, an atomic force microscope, and X-ray photoelectron spectroscopy. A higher transmittance of 85.40% from GaO thin film is obtained compared with that of polyimide (PI) film (83.52%), which indicates the feasibility for a GaO thin layer to substitute for a conventional PI layer as an alignment layer. LCs are found to align on the GaO thin film after pre-baking at 100°C and homogeneous and uniform low-IB intensity irradiation. We also determined the electro-optical (EO) characteristics of the twisted nematic (TN) cells fabricated with GaO thin layers and found them to be similar to those of cells fabricated with PI layers. Overall, GaO films achieved via the IB irradiation method are promising LC alignment layers due to the method’s low-temperature solution-derived process.     

Stability of thin stagnant film on a solid surface with a viscoelastic air-liquid interface

Linear stability analysis for a film on a solid surface with a viscoelastic air-liquid interface is presented. The interfacial dilatational and shear viscoelastic properties were described by Maxwell models. Dilatational and shear interfacial elasticity and viscosity were shown to improve film stability. When the interfacial rheological properties are extremely large or small, the maximum perturbation growth coefficient is shown to reduce to those for immobile and mobile interfaces respectively. Calculated values of maximum growth coefficient for thin film stabilized by 0.5% beta-lactoglobulin approached those of mobile films for thick (>2000 nm) and those for immobile films for thin (<100 nm) films respectively with the values lying between the two limits for intermediate film thicknesses.     

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Influences of chain heterogeneity on instability of polymeric thin films: dewetting of polystyrenes, polychloromethylstyrenes and its copolymers

This study compares the stability of various polymeric thin films supported on SiO(x)/Si substrate. Dewetting behaviors of polystyrenes (PS), polychloromethylstyrenes, and random poly(styrene-co-chloromethylstyrene)s are investigated by utilizing atomic force microscopy. A systematic addition of the chloromethylstyrene (ClMS) unit into PS chain causes the increase of segment polarity, affecting interfacial and interchain interactions in thin films. It is found that stability of the polymeric films depends on two major parameters, ratio of the ClMS unit and film thickness. For approximately 5 nm thick film, the addition of only 5 mol% ClMS unit causes a drastic increase of its stability, attributed to the enhanced interfacial interactions between ClMS group and SiO(x) layer. Further increasing the ClMS mole ratio to 20, 45, and 100% is accompanied by a systematic increase of the film stability. Thicker films (thicknesses approximately 22 and approximately 45 nm) of the copolymer with 5 mol% ClMS unit exhibit rather different behavior. They are found to be less stable compared to the PS films. However, the films of copolymers with ClMS unit of 20, 45, and 100% are still much more stable than the PS films. These dewetting behaviors of the copolymers are correlated to the interfacial interactions, interchain interactions and segmental segregation in thin films.     

Atomically flat gold on elastomeric substrate

We present a procedure to fabricate extremely smooth Au films supported on thin elastomeric (PDMS) substrates. Minimum rms roughness and largest grain size are obtained using Si wafers, coated with native oxide and release layers, as templates for the growth of thermally evaporated Au films. The wafers are held at a temperature of 300 degrees C during deposition. The Au films, up to 200 nm thick, are then transferred onto poly(dimethylsiloxane) substrates which have been previously surface-functionalized with a (3-mercaptopropyl)trimethoxysilane adhesion layer. The resulting Au films have been found by AFM to be extremely smooth with rms-roughness 2.5-4 angstroms and to exhibit a crystalline morphology with flat grains >500 nm in size. Thinner films, down to 20 nm, are grown at lower temperature and are comparably smooth, but with a loss in crystalline morphology. We compare the results of this optimized procedure with other gold films grown on mica sheets as templates and to those produced using Ti-O-Si interfacial chemistry.     

The effect of polyvinyl alcohol (PVA) on the optical,electrical and solid state properties of copper zinc tin sulfide (CZTS) deposited by sensitive spray pyrolysis (SSP)

Recently, the use of CZTS as the basis for other generation of low cost thin films solar cells has stimulated further researches. Its excellent p-type absorber nature, relatively high absorption coefficient and ideal energy band-gap of 1.5eV motivated these efforts. Additionally, CZTS consist of earth-abundant, cheap and non-toxic elements with very low manufacturing cost. Initially, copper indium gallium selenide (CIGS) solar cell device emerged but suffered limitations in further development because of rare indium and gallium in the device structure therefore, CZTS is recently preferred as an alternative to CIGS commercial solar cell absorber layer. In this work, solution mixture of CZTS and PVA was deposited on a substrate at temperature of 150 °C. Sensitive spray pyrolysis was used to grow the thin films where calculated amount of the precursor mixture was allowed to fall and be deposited on a heated substrate to form CZTS/PVA thin films. Subsequently, the thin film samples were annealed at a temperature of 200^oCfor 1 h to achieving pure crystalline thin film formation. SEM, XRD analysis, Optical, Solid State properties and Raman analysis were studied. The XRD analysis showed that the thin films fell into the pure kesterite structure of CZTS. Results show that produced thin films exhibited higher absorption coefficient and optical conductivity than pure CZTS, 10⁶ m^?1 and 10¹⁴(S^?1) against 10⁴cm^?1 and 10¹²(S^?1) respectively. The band-gap is between 1.53eV and 1.73eV. Using a PVA concentration of 0.05 M yielded highest absorbance and optical conductivity with lowest real dielectric constant and transmittance. These improved optical, electrical and solid state properties suitably qualify these thin films as absorber layer material for solar cell applications.