Removal of Ar+ beam‐induced damaged layers from polyimide surfaces with argon gas cluster ion beams

An Ar Gas Cluster Ion Beam (GCIB) has been shown to remove previous Ar⁺ ion beam‐induced surface damage to a bulk polyimide (PI) film. After removal of the damaged layer with a GCIB sputter source, XPS measurements show minor changes to the carbon, nitrogen and oxygen atomic concentrations relative to the original elemental bulk concentrations. The GCIB sputter depth profiles showed that there is a linear relationship between the Ar⁺ ion beam voltage within the range from 0.5 to 4.0 keV and the dose of argon cluster ions required to remove the damaged layer. The rate of recovery of the original PI atomic composition as a function of GCIB sputtering is similar for carbon, nitrogen and oxygen, indicating that there was no preferential sputtering for these elements. The XPS chemical state analysis of the N 1s spectra after GCIB sputtering revealed a 17% damage ratio of altered nitrogen chemical state species. Further optimization of the GCIB sputtering conditions should lead to lower nitrogen damage ratios with the elemental concentrations closer to those of bulk PI. Copyright © 2010 John Wiley & Sons, Ltd.     

Observations on X‐ray enhanced sputter rates in argon cluster ion sputter depth profiling of polymers

Traditionally polymer depth profiling by X‐ray photoelectron spectroscopy (XPS) has been dominated by the damage introduced by the ion beam rather than the X‐rays. With the introduction of polyatomic and especially argon gas cluster ion‐beam (GCIB) sources for XPS instruments, this is no longer the case, and either source of damage may be important (or dominate) under particular conditions. Importantly, while ion‐beam damage is a near‐surface effect, X‐ray damage may extend micrometres into the bulk of the sample, so that the accumulation of X‐ray damage during long depth profiles may be very significant. We have observed craters of similar dimensions to the X‐ray spot well within the perimeter of sputter craters, indicating that X‐rays can assist GCIB sputtering very significantly. We have measured experimentally sputter craters in 13 different polymers. The results show that X‐ray exposure can introduce much more topography than might previously have been expected, through both thermal and direct X‐ray degradation. This can increase the depth of a crater by a remarkable factor, up to three in the case of poly‐L‐lactic acid and polychlorotrifluorothylene under reasonably normal XPS conditions. This may be a major source of the loss of depth resolution in sputter depth profiles of polymers. Copyright © 2012 John Wiley & Sons, Ltd.     

Secondary ion mass spectrometry depth profiling of ultrathick films using an argon gas cluster source: Crater shape implications on the analysis area as a function of depth

Argon cluster ions have enabled molecular depth profiling to unprecedented depths, with minimal loss of chemical information or changes in sputter rate. However, depth profiling of ultrathick films (>100 μm) using a commercial ion source oriented at 45° to the surface causes the crater bottom to shrink in size because of a combination of the crater wall angle, sputter rate differences along the trailing-edge crater wall, and undercutting on the leading-edge. The shrinking of the crater bottom has 2 immediate effects on dual-beam depth profiling: first is that the centering of the analysis beam inside the sputter crater will no longer ensure the best quality depth profile because the location of the flat crater bottom progressively shifts toward the leading-edge and second, the shifting of the crater bottom enforces a maximum thickness of the film that could be depth profiled. Experiments demonstrate that a time-of-flight secondary ion mass spectrometry instrument equipped with a 20 keV argon cluster source is limited to depth profiling a 180 μm-thick film when a 500 μm sputter raster is used and a 100 μm square crater bottom is to be left for analysis. In addition, depth profiling of a multilayer film revealed that the depth resolution degrades on trailing-edge side of the crater bottom presumably because of the redeposition of the sputtered flux from the crater wall onto the crater bottom.     

Inkjet printing of gold nanoparticles onto a biologically relevant matrix to create quantitative test materials for time-of-flight secondary ion mass spectrometry

This study describes the use of inkjet printing for the preparation of test materials containing gold nanoparticles (AuNPs) on a biologically relevant matrix and discusses the methods of using time-of-flight secondary ion mass spectrometry (ToF-SIMS) for their spatially resolved quantification. Evaluation of test materials containing AuNPs with nominal diameters of (30, 80, 100, and 150) nm deposited onto gelatin with loadings ranging from 34 fg up to 67 000 fg per spot suggests that ToF-SIMS has the sensitivity and the dynamic range to quantify NP deposits in a biological matrix at toxicologically relevant concentrations, although it was not capable of reliably determining the size of the AuNPs from the intensity data. Regardless, the ability to extract intensity data from individual regions of interest (ROIs) showed that spatially resolved quantification is possible, even when multiple features exist in a single image and in a single depth profile. The argon gas cluster source used for sputtering led to a matrix removal effect where the matrix surrounding the AuNPs became negligible, which may facilitate the preparation of quantitative test materials.     

Enhanced surface sensitivity in secondary ion mass spectrometric analysis of organic thin films using size‐selected Ar gas‐cluster ion projectiles

A size‐selected argon (Ar) gas‐cluster ion beam (GCIB) was applied to the secondary ion mass spectrometry (SIMS) of a 1,4‐didodecylbenzene (DDB) thin film. The samples were also analyzed by SIMS using an atomic Ar⁺ ion projectile and X‐ray photoelectron spectroscopy (XPS). Compared with those in the atomic‐Ar⁺ SIMS spectrum, the fragment species, including siloxane contaminants present on the sample surface, were enhanced several hundred times in the Ar gas‐cluster SIMS spectrum. XPS spectra during beam irradiation indicate that the Ar GCIB sputters contaminants on the surface more effectively than the atomic Ar⁺ ion beam. These results indicate that a large gas‐cluster projectile can sputter a much shallower volume of organic material than small projectiles, resulting in an extremely surface‐sensitive analysis of organic thin films. Copyright © 2010 John Wiley & Sons, Ltd.     

An Auger Electron Spectroscopic Study of Ion and Plasma Etching of Thin Films Obtained by Plasma Activation of the Microdroplet Products of Thermal Degradation of Solid Polypropylene

The matrix properties of films obtained by plasma-enhanced deposition of the microdroplet products of thermal degradation of solid propylene (PEPP) were studied. The sample thickness was 120 nm, and the volume fraction of the dense phase was 10%. The rates of ion sputtering and the rates and some features of etching of the PEPP films at various plasma parameters were determined from the concentration profiles of the basic film-forming element (carbon) as obtained by Auger electron spectroscopy (AES) in combination with layer-by-layer sputtering by argon ions. It was shown that the films were highly uniform over the entire film depth down to the substrate. The oxygen concentration on the sample surface and over the film depth were determined after the plasma etching of the film in the residual air (the depth of penetration and formation of oxygen-containing groups did not exceed 30 nm). The alternation of interference colors on the PEPP surface observed in scattered light during the plasma etching was described. Comparison of the results obtained with the data for initial polypropylene made it possible to conclude that the matrix forming the basis of the PEPP coatings (90%) can be treated as a polymer-like structure.     

Quantitative Analysis of Thin Aluminium-Oxynitride Films by EPMA

 Thin films of aluminium oxynitride with diverse composition were prepared by dc-magnetron sputtering of aluminium, utilising sputtering power as well as argon, oxygen and nitrogen gas flows to vary the composition. Since film properties depend mainly on the content of incorporated oxygen and nitrogen, a method for quantitative analysis of the main constituents based on electron probe micro analysis with energy dispersive detection was developed. The excellent precision of the quantitative results for aluminium as well as oxygen and nitrogen are shown. Furthermore, a film layer analysis program was applied for the quantification of several films deposited under the same deposition parameters on silicon wafers, from 520 nm down to 40 nm thickness, showing that electron probe micro analysis with energy dispersive detection is a reliable method for quantitative compositional analysis of thin aluminium oxynitride films down to approximately 20 nm thickness. Since this method of analysis provides only bulk information, expected inhomogeneities of the depth distribution of the film components were checked by secondary ion mass spectrometry depth profiles of two thin films and correlated to the EPMA results. The thickness of the films was determined by ellipsometry. Received September 1, 1998     

Three-dimensional depth profiling of molecular structures

Molecular time of flight secondary ion mass spectrometry (ToF-SIMS) imaging and cluster ion beam erosion are combined to perform a three-dimensional chemical analysis of molecular films. The resulting dataset allows a number of artifacts inherent in sputter depth profiling to be assessed. These artifacts arise from lateral inhomogeneities of either the erosion rate or the sample itself. Using a test structure based on a trehalose film deposited on Si, we demonstrate that the “local” depth resolution may approach values which are close to the physical limit introduced by the information depth of the (static) ToF-SIMS method itself.     

Argon cluster cleaning of Ga+ FIB-milled sections of organic and hybrid materials

Secondary ion mass spectrometry studies have been made of the removal of the degraded layer formed on polymeric materials when cleaning focused ion beam (FIB)-sectioned samples comprising both organic and inorganic materials with a 30-keV Ga⁺ FIB. The degraded layer requires a higher-than-expected Ar gas cluster ion beam (GCIB) dose for its removal, and it is shown that this arises from a significant reduction in the layer sputtering yield compared with that for the undamaged polymer. Stopping and Range of Ions in Matter calculations for many FIB angles of incidence on flat polymer surfaces show the depth of the damage and of the implantation of the Ga⁺ ions, and these are compared with the measured depth profiles for Ga⁺-implanted flat polymer surfaces at several angles of incidence using an Ar⁺ GCIB. The Stopping and Range of Ions in Matter depth and the measured dose give the sputtering yield volume for this damaged and Ga⁺-implanted layer. These, and literature yield values for Ga⁺ damaged layers, are combined on a plot showing how the changing sputtering yield is related to the implanted Ga density for several polymer materials. This plot contains data from both the model flat poly(styrene) surfaces and FIB-milled sections showing that these 2 surfaces have the same yield reduction. The results show that the damaged and Ga⁺-implanted layer's sputtering rate, after FIB sectioning, is 50 to 100 times lower than for undamaged polymers and that it is this reduction in sputtering rate, rather than any development of microtopography, that causes the high Ar⁺ GCIB dose required for cleaning these organic surfaces.     

A quantitative determination of the polymerization of benzoxazine thin coatings by time-of-flight secondary ion mass spectrometry

Phenol-paraphenylenediamine (P-pPDA) benzoxazines exhibit excellent barrier properties, adequate to protect aluminum alloys from corrosion, and constitute interesting candidates to replace chromate-containing coatings in the aeronautical industry. For the successful application of P-pPDA coatings, it is necessary to decrease the curing temperature to avoid the delamination of the coating while preserving the mechanical properties of the alloy, as well as the barrier properties of the coating. However, decreasing the curing temperature leads to less polymerized films, the extent of which requires a quantitative assessment. While the conversion rate of the polymerization reaction is commonly evaluated for bulk samples using differential scanning calorimetry (DSC), a tool for its evaluation in thin films is missing. Therefore, a new approach was developed for that matter using time-of-flight secondary ion mass spectrometry (ToF-SIMS). The relation between the SIMS data integrated from inside thin films and the DSC results obtained on bulk samples with the same curing cycle allowed to calibrate the SIMS data. With this preliminary calibration of the technique, the polymerization of P-pPDA coatings can be locally determined, at the surface and along the depth of the coating, using dual-beam depth profiling with large argon cluster beam sputtering.     

Study in the effect of annealing on hydrogen retention properties of C‐90%SiC films

Carbon‐rich silicon carbide (C‐90%SiC) films as hydrogen barriers were deposited on the surface of stainless steel substrates with magnetron sputtering, and then bombarded by argon ion beam. In order to remove the argon atoms reserved during films preparation, some samples with the prepared C‐90%SiC films were thermally annealed for 30 min at 473, 673 and 873 K in vacuum, respectively. These samples together with the un‐annealed ones were then irradiated by a 5 keV hydrogen ion beam. SEM was used to investigate the surface micrograph of those films and SIMS was used to measure the mass spectra of positive species and the depth distribution of argon and hydrogen in the samples. A remarkable decrease in hydrogen intensity in the substrates with annealing indicates that annealing for removing argon can effectively improve hydrogen retention properties of the C‐90%SiC films. Copyright © 2008 John Wiley & Sons, Ltd.     

Improved Electrochemical Performance of Mg-doped ZnO Thin Film as Anode Material for Lithium Ion Batteries

Zn1-xMgxO （x = 0, 0.18） thin films were fabricated on the copper substrates by radiofrequency magnetron sputtering using the high pure argon as a sputtering gas. The Zn1-xMgxO films were characterized by X-ray powder diffraction （XRD）, scanning electron microscope （SEM） and galvanostatic tests. The electrochemical test showed an improved electrochemical performance of Zn0.82EMg0.18O thin film as an anode material for lithium ion batteries.     

Nanoscale imaging of hydrogen and sodium in alteration layers of corroded glass using ToF-SIMS: Is an auxiliary sputtering ion beam necessary?

The hydrogen (H)/sodium (Na) interface is of great interest in glass corrosion research. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is one of the few techniques that can provide nanoscale H and Na imaging simultaneously. However, the optimized condition for ToF-SIMS imaging of H in glass is still unclear. In H depth profiling using ToF-SIMS, H background control is a key, in which an analysis ion beam and a sputtering ion beam work together in an interlaced mode to minimize it. Therefore, it is of great interest to determine if an auxiliary sputtering ion beam is also necessary to control H background in ToF-SIMS imaging of H. In this study, H imaging with and without auxiliary sputtering beams (Cs⁺, O₂⁺, and Ar_n⁺) was compared on a corroded international simple glass (ISG). It was surprising that the H/Na interface could be directly imaged using positive ion imaging without any auxiliary sputtering ion beam under a vacuum of 2 to 3 × 10⁻⁸ mbar. The H⁺ background was about 5% atomic percent on the pristine ISG glass, which was significantly lower than the H concentration in the alteration layer (~15%). Moreover, positive ion imaging could show distributions of other interesting species simultaneously, providing more comprehensive information of the glass corrosion. If an auxiliary O₂⁺ sputtering ion beam was used, the H⁺ background could be reduced but still higher than that in the depth profiling. Besides, this condition could cause significant loss of signal intensities due to strong surface charging.     

Summary of ISO/TC 201 Standard: ISO 22415—Surface chemical analysis—Secondary ion mass spectrometry—Method for determining yield volume in argon cluster sputter depth profiling of organic materials

The International Standard ISO 22415 provides methods to measure sputtering yield volumes of organic test materials using argon cluster ions. The test materials should consist of thin films of known thicknesses between 50 and 1000 nm. The format of the test materials, the measurement of sputtering ion dose, sputtered depth, and reporting requirements for sputtering yield volumes are described.     

Characterization of oxygen and argon ion flux interaction with PET surfaces by in-situ XPS and ex-situ FTIR

The effects of low (2.5, 0.2 keV) energy reactive oxygen ion bombardment and argon ion bombardment on poly(ethylene terephthalate) thin film (PET) surface chemical composition were studied. PET films have a high potential as a material for biomedical and electrical industries. The source of ions was an ECR Ion Gun with settable acceleration voltages. PET films were sputtered by ion bombardment for variable process time and the modified films were investigated by in-situ X-ray Photoelectron Spectroscopy (XPS) and ex-situ Fourier transform infrared spectroscopy (FTIR). The significant changes in the chemical composition of surface layers were quantitatively studied by XPS. The ion bombardment scissions the chains in PET film surface layers. Selective sputtering of oxygen atoms from PET surface was observed when argon ion flux used. The 0.2 keV and 2.5 keV argon ion decreased O/C ratio from 0.37 to 0.25, 0.04 respectively. This phenomenon is responsible for the creation of carbon-rich up 96 at.% surface layer and the oxygen in ester bonds is detached first. The oxygen 2.5 keV ion bombardment had similar effect as argon ion bombardment; the ratio O/C was decreased. The ester bond was broken first. But oxygen 0.2 keV ion flux irradiation created an oxygen rich surface; the O/C ratio was in increased from 0.37 to 0.46. The changes in surface conductivity were investigated by shifts in C1s binding energy. Good agreement with atomic concentration of carbon in C-C bonds on the films surface was found. The FTIR analyses identified changes in chemical composition but with no obvious correlation to surface changes. Photons from the ion source irradiating the PET film during ion bombardment probably caused the observed changes in FTIR spectra.     

Nanotome cluster bombardment to recover spatial chemistry after preparation of biological samples for SIMS imaging

A C₆₀⁺ cluster ion projectile is employed for sputter cleaning biological surfaces to reveal spatio-chemical information obscured by contamination overlayers. This protocol is used as a supplemental sample preparation method for time of flight secondary ion mass spectrometry (ToF-SIMS) imaging of frozen and freeze-dried biological materials. Following the removal of nanometers of material from the surface using sputter cleaning, a frozen-patterned cholesterol film and a freeze-dried tissue sample were analyzed using ToF-SIMS imaging. In both experiments, the chemical information was maintained after the sputter dose, due to the minimal chemical damage caused by C₆₀⁺ bombardment. The damage to the surface produced by freeze-drying the tissue sample was found to have a greater effect on the loss of cholesterol signal than the sputter-induced damage. In addition to maintaining the chemical information, sputtering is not found to alter the spatial distribution of molecules on the surface. This approach removes artifacts that might obscure the surface chemistry of the sample and are common to many biological sample preparation schemes for ToF-SIMS imaging.     

Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams

We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time‐of‐flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar₇₀₀ and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials. Copyright © 2009 John Wiley & Sons, Ltd.     

The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB

Low-energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10-nm-thick buckminsterfullerene (C₆₀) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction.     

Comparison of fullerene and large argon clusters for the molecular depth profiling of amino acid multilayers

A major challenge regarding the characterization of multilayer films is to perform high-resolution molecular depth profiling of, in particular, organic materials. This experimental work compares the performance of C₆₀ ⁺ and Ar₁₇₀₀ ⁺ for the depth profiling of model multilayer organic films. In particular, the conditions under which the original interface widths (depth resolution) were preserved were investigated as a function of the sputtering energy. The multilayer samples consisted of three thin δ-layers (~8 nm) of the amino acid tyrosine embedded between four thicker layers (~93 nm) of the amino acid phenylalanine, all evaporated on to a silicon substrate under high vacuum. When C₆₀ ⁺ was used for sputtering, the interface quality degraded with depth through an increase of the apparent width and a decay of the signal intensity. Due to the continuous sputtering yield decline with increasing the C₆₀ ⁺ dose, the second and third δ-layers were shifted with respect to the first one; this deterioration was more pronounced at 10 keV, when the third δ-layer, and a fortiori the silicon substrate, could not be reached even after prolonged sputtering. When large argon clusters, Ar₁₇₀₀ ⁺, were used for sputtering, a stable molecular signal and constant sputtering yield were achieved throughout the erosion process. The depth resolution parameters calculated for all δ-layers were very similar irrespective of the impact energy. The experimental interface widths of approximately 10 nm were barely larger than the theoretical thickness of 8 nm for the evaporated δ-layers.

Surface topography effects on glow discharge depth profiling analysis

Glow discharge optical emission spectroscopy (GD‐OES) has been shown to be of immense value in elemental depth profiling of thin or thick films on conductive or non‐conductive substrates. For aluminium, GD‐OES has been employed to examine locations of markers and tracers in anodic films, thereby assisting understanding of transport phenomena. In order to investigate the influence of surface topography on depth profiling analysis, anodic aluminium oxide films of various thicknesses, with incorporated electrolyte species, were produced on superpure aluminium substrates of controlled roughnesses. The distributions of incorporated species in the films were subsequently probed. Surface topography modifications and consequent depth resolution degradation were examined during depth profiling analysis performed by GD‐OES. The results reveal that the sputtering process leads to the roughening or smoothing of the surface topography of the specimen for a ratio of the film thickness to the amplitude of the substrate texture less, or greater, than 1 respectively. As a consequence of the surface topography dependence of the ion bombardment, analysis of thin films over rough surfaces suffers from depth resolution limitations due to sputtering‐induced topography changes, thereby limiting quantification of the resultant spectra. Copyright © 2010 John Wiley & Sons, Ltd.